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    • 79. 发明授权
    • Electron source and manufacture method of same, and image forming device
and manufacture method of same
    • 电子源及其制造方法及其成像装置及其制造方法
    • US5650795A
    • 1997-07-22
    • US172105
    • 1993-12-23
    • Yoshikazu BannoSeishiro YoshiokaIchiro NomuraHidetoshi SuzukiTetsuya KanekoToshihiko Takeda
    • Yoshikazu BannoSeishiro YoshiokaIchiro NomuraHidetoshi SuzukiTetsuya KanekoToshihiko Takeda
    • H01J1/316H01J29/04G09G3/22
    • H01J29/04H01J1/316
    • In an electron source comprising a base plate and an electron emitting element disposed on the base plate, the electron emitting element includes a plurality of electron emitting portions electrically connected in parallel, the electrical connection being made through a thermally cut-off member. After forming the plurality of electron emitting portions, their electron emission characteristics are checked and, for that electron emitting portion on which the electron emission characteristic has been found not normal, the electrical connection is cut off. Alternatively, the electron emitting element includes an electron emitting portion connected to a voltage supply through a thermally cut-off member, and an electron emitting portion forming film which includes a thermally connecting member. In this case, after cutting off the electrical connection in that electron emitting portion on which the electron emission characteristic has been found not normal, the electron emitting portion forming film is connected to the voltage supply for forming another electron emitting portion in the film. With such an electron source and an image forming device using the electron source, a production yield and image quality are improved.
    • 在包括基板和设置在基板上的电子发射元件的电子源中,电子发射元件包括并联电连接的多个电子发射部分,电连接通过热切断部件制成。 在形成多个电子发射部分之后,检查其电子发射特性,并且对于发现电子发射特性不正常的电子发射部分,电连接被切断。 或者,电子发射元件包括通过热切断构件连接到电压源的电子发射部分和包括热连接部件的电子发射部分形成膜。 在这种情况下,在切断发现电子发射特性不正常的电子发射部分的电连接之后,电子发射部分形成膜连接到用于在膜中形成另一个电子发射部分的电压源。 利用这样的电子源和使用电子源的图像形成装置,提高了制作成品率和图像质量。
    • 80. 发明授权
    • Electron emission element with schottky junction
    • 具肖特基结的电子发射元件
    • US5554859A
    • 1996-09-10
    • US557678
    • 1995-11-13
    • Takeo TsukamotoNobuo WatanabeToshihiko TakedaMasahiko Okunuki
    • Takeo TsukamotoNobuo WatanabeToshihiko TakedaMasahiko Okunuki
    • H01J1/308H01J9/02H01L29/06H01L29/12
    • H01J1/308H01J9/022
    • This is an electron emission with a semiconductor substrate having a p-type semiconductor layer whose impurity concentration falls within a concentration range for causing an avalanche breakdown in a least a portion of a surface of the semiconductor layer. A Schottky electrode is connected to the semiconductor layer. There are a means for applying a reverse bias voltage between the Schottky electrode and the p-type semiconductor layer to cause the Schotty electrode to emit electrons, and a lead electrode, formed at a proper position, for externally guiding the emitted electrons. At least a portion of the Schottky electrode is formed of a thin film of a material selected from metals of Group 1A, Group 2A, Group 3A, and lanthanoids, metal silicides of Group 1A, Group 2A, Group Group 3A, and lanthanoids, and metal borides of Group 1A, Group 2A, Group 3A, and lanthanoids, and metal carbides of Group 4A. A film thickness of the Schotty electrode is set to be not more than 100 .ANG..
    • 这是具有半导体衬底的电子发射,其半导体衬底具有p型半导体层,其杂质浓度落在半导体层的表面的至少一部分中引起雪崩击穿的浓度范围内。 肖特基电极连接到半导体层。 存在在肖特基电极和p型半导体层之间施加反向偏置电压以使Schotty电极发射电子的装置和形成在适当位置的引线电极,用于外部引导发射的电子。 肖特基电极的至少一部分由选自组1A,组2A,组3A和镧系元素的金属的薄膜,组1A,组2A,组3A和镧系元素的金属硅化物形成,以及 第1A组,第2A组,第3A组和镧系金属硼化物,以及4A组金属碳化物。 将Schotty电极的膜厚设定为不超过100。