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71. 发明授权

US07746702B2 Memory device and method for estimating characteristics of multi-bit programming 有权
公开(公告)号：US07746702B2
公开(公告)日：2010-06-29
申请号：US12213657
申请日：2008-06-23
申请人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
发明人： Kyoung Lae Cho , Seung-Hwan Song , Yoon Dong Park , Jun Jin Kong , Jae-Hong Kim
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/32 , G11C16/349 , G11C29/00 , G11C2211/5634
摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.

72. 发明申请

US20090235128A1 Data detecting apparatus based on channel information and method thereof 审中-公开
标题翻译：基于信道信息的数据检测装置及其方法
公开(公告)号：US20090235128A1
公开(公告)日：2009-09-17
申请号：US12230502
申请日：2008-08-29
申请人： Heeseok Eun , Jun Jin Kong , Jae Hong Kim
发明人： Heeseok Eun , Jun Jin Kong , Jae Hong Kim
IPC分类号： G06F11/10 , G06F12/02 , G06F11/34
CPC分类号： G06F11/1008 , G11C16/26
摘要： An apparatus and a method for detecting data stored in a memory cell based on channel information of the memory cell are provided. The data detecting apparatus may include a voltage comparison unit that compares a plurality of soft decision reference voltages between neighboring hard decision reference voltages with a threshold voltage of a memory cell to determine a region including the threshold voltage, and a data detection unit that detects data stored in the memory cell based on channel information of the memory cell according to the region. The data detecting apparatus may further include a reference voltage determination unit that determines the plurality of soft decision reference voltages based on the channel information of the memory cell.
摘要翻译：提供了一种用于基于存储器单元的信道信息来检测存储在存储单元中的数据的装置和方法。数据检测装置可以包括电压比较单元，其将相邻硬判决参考电压之间的多个软判决参考电压与存储器单元的阈值电压进行比较，以确定包括阈值电压的区域;以及数据检测单元，其检测数据根据该区域，根据存储单元的信道信息存储在存储单元中。数据检测装置还可以包括参考电压确定单元，其基于存储器单元的信道信息来确定多个软判决参考电压。

73. 发明申请

US20090210776A1 Memory device and memory data reading method 有权
标题翻译：存储器和存储器数据读取方式
公开(公告)号：US20090210776A1
公开(公告)日：2009-08-20
申请号：US12216744
申请日：2008-07-10
申请人： Kyoung Lae Cho , Jae Hong Kim , Yoon Dong Park , Jun Jin Kong , Dong Hyuk Chae
发明人： Kyoung Lae Cho , Jae Hong Kim , Yoon Dong Park , Jun Jin Kong , Dong Hyuk Chae
IPC分类号： H03M13/09 , G06F11/10
CPC分类号： G06F11/1072 , H03M13/09 , H03M13/15 , H03M13/1515 , H03M13/152
摘要： Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.
摘要翻译：示例性实施例可以提供存储器件和存储器数据读取方法。根据示例实施例的存储器件可以包括多位单元阵列，错误检测器，其可以从多位单元阵列中的存储器页读取第一数据页，并且可以检测第一数据页的错误位，以及估计器，其可以识别存储错误位的多位单元，并且可以估计存储在所识别的多位单元中的数据在第二数据页的数据中。因此，存储器件和存储器数据读取方法可以具有当读取存储在多位单元中的数据并且监视多位单元的状态而没有额外开销时减小误差的效果。

74. 发明授权

US08230157B2 Memory device and method of multi-bit programming 失效
标题翻译：多位编程的存储器件和方法
公开(公告)号：US08230157B2
公开(公告)日：2012-07-24
申请号：US12155647
申请日：2008-06-06
申请人： Jaehong Kim , Kyoung Lae Cho , Jun Jin Kong , Heeseok Eun , Seung-Hwan Song
发明人： Jaehong Kim , Kyoung Lae Cho , Jun Jin Kong , Heeseok Eun , Seung-Hwan Song
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28 , G06F11/00 , G06F11/10 , H03M13/00 , G11C29/00
CPC分类号： G11C11/5628 , G11C11/5671 , G11C29/00
摘要： Memory devices and multi-bit programming methods are provided. A memory device may include a plurality of memory units; a data separator that separates data into a plurality of groups; a selector that rotates each of the plurality of groups and transmits each of the groups to at least one of the plurality of memory units. The plurality of memory units may include page buffers that may program the transmitted group in a plurality of multi-bit cell arrays using a different order of a page programming operation. Through this, evenly reliable data pages may be generated.
摘要翻译：提供了存储器件和多位编程方法。存储器件可以包括多个存储器单元; 数据分离器，将数据分离成多个组; 选择器，其使所述多个组中的每一个旋转，并将所述组中的每一个发送到所述多个存储器单元中的至少一个。多个存储器单元可以包括可以使用页面编程操作的不同顺序对多个多位单元阵列中的发送组进行编程的页缓冲器。通过此，可能会生成均匀可靠的数据页。

75. 发明授权

US08122329B2 Methods of operating memory devices using error correction and rereading techniques 有权
标题翻译：使用纠错和重新读取技术来操作存储器件的方法
公开(公告)号：US08122329B2
公开(公告)日：2012-02-21
申请号：US12929161
申请日：2011-01-05
申请人： Jun Jin Kong , Sung Chung Park , Dongku Kang , Dong Hyuk Chae , Seung Jae Lee , Nam Phil Jo , Seung-Hwan Song
发明人： Jun Jin Kong , Sung Chung Park , Dongku Kang , Dong Hyuk Chae , Seung Jae Lee , Nam Phil Jo , Seung-Hwan Song
IPC分类号： H03M13/00 , G11C29/00
CPC分类号： G11C29/42 , G06F11/1068 , G11C11/5628 , G11C29/028 , G11C2029/0409 , G11C2029/0411
摘要： Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.
摘要翻译：提供各种读取级别控制装置和方法。在各种实施例中，读取级别控制装置可以包括用于对从存储单元读取的数据进行ECC解码的错误控制代码（ECC）解码单元和用于基于ECC解码数据监视误码率（BER）的监视单元，以及读数据。该装置还可以包括用于基于所监视的BER来确定读取数据的错误率的错误确定单元，以及用于基于错误率来控制存储单元的读取电平的电平控制单元。

76. 发明申请

US20110145663A1 Read level control apparatuses and methods 有权
标题翻译：读取电平控制装置和方法
公开(公告)号：US20110145663A1
公开(公告)日：2011-06-16
申请号：US12929161
申请日：2011-01-05
申请人： Jun Jin Kong , Sung Chung Park , Dongku Kang , Dong Hyuk Chae , Seung Jae Lee , Nam Phil Jo , Seung-Hwan Song
发明人： Jun Jin Kong , Sung Chung Park , Dongku Kang , Dong Hyuk Chae , Seung Jae Lee , Nam Phil Jo , Seung-Hwan Song
IPC分类号： G06F11/00
CPC分类号： G11C29/42 , G06F11/1068 , G11C11/5628 , G11C29/028 , G11C2029/0409 , G11C2029/0411
摘要： Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.
摘要翻译：提供各种读取级别控制装置和方法。在各种实施例中，读取级别控制装置可以包括用于对从存储单元读取的数据进行ECC解码的错误控制代码（ECC）解码单元和用于基于ECC解码数据监视误码率（BER）的监视单元，以及读数据。该装置还可以包括用于基于所监视的BER来确定读取数据的错误率的错误确定单元，以及用于基于错误率来控制存储单元的读取电平的电平控制单元。

77. 发明授权

US07835209B2 Method and apparatus for controlling reading level of memory cell 有权
标题翻译：用于控制存储单元的读取电平的方法和装置
公开(公告)号：US07835209B2
公开(公告)日：2010-11-16
申请号：US12003545
申请日：2007-12-28
申请人： Sung Chung Park , Jun Jin Kong , Seung-Hwan Song , Dong Ku Kang
发明人： Sung Chung Park , Jun Jin Kong , Seung-Hwan Song , Dong Ku Kang
IPC分类号： G11C7/02
CPC分类号： G11C16/28 , G11C29/02 , G11C29/026 , G11C29/028 , G11C2029/0411
摘要： A method and apparatus for controlling a reading level of a memory cell are provided. The method of controlling a reading level of a memory cell may include: receiving metric values calculated based on given voltage levels and reference levels; generating summed values for each of the reference levels by summing metric values corresponding to levels of a received signal from among the received metric values; selecting the reference level having the greatest value of the generated summed values from the reference levels; and controlling the reading level of the memory cell based on the selected reference level.
摘要翻译：提供了一种用于控制存储单元的读取电平的方法和装置。控制存储器单元的读取电平的方法可以包括：接收基于给定电压电平和参考电平计算出的度量值; 通过对应于来自接收到的度量值中的接收信号的电平的度量值相加来产生每个参考电平的相加值; 从所述参考电平中选择具有所生成的总和值的最大值的参考电平; 以及基于所选择的参考电平来控制所述存储器单元的读取电平。

78. 发明授权

US07782666B2 Apparatus and method of multi-bit programming 有权
标题翻译：多位编程的装置和方法
公开(公告)号：US07782666B2
公开(公告)日：2010-08-24
申请号：US12076392
申请日：2008-03-18
申请人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Seung Hoon Lee , Jung Hun Sung , Sung-Jae Byun , Seung-Hwan Song , Donghun Yu , Sung Chung Park , Heeseok Eun
发明人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Seung Hoon Lee , Jung Hun Sung , Sung-Jae Byun , Seung-Hwan Song , Donghun Yu , Sung Chung Park , Heeseok Eun
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C2211/5621
摘要： Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may include: a first control unit that allocates any one of 2N threshold voltage states to the N-bit data; a second control unit that spaces, by any one of a first interval and a second interval, adjacent threshold voltage states of the 2N threshold voltage states; and a programming unit that programs the N-bit data by generating, in each of the at least one multi-bit cell, a distribution state corresponding to the allocated threshold voltage state. The multi-bit programming apparatus can reduce an error rate when reading data.
摘要翻译：提供了多位编程设备和/或方法。多比特编程装置可以包括：第一控制单元，其向N比特数据分配2N个阈值电压状态中的任何一个; 第二控制单元，其以第一间隔和第二间隔中的任一个间隔相邻的阈值电压状态的阈值电压状态; 以及编程单元，其通过在所述至少一个多位单元中的每一个中生成与所分配的阈值电压状态相对应的分布状态来对所述N位数据进行编程。多位编程装置可以在读取数据时降低错误率。

79. 发明授权

US07724587B2 Apparatuses, computer program products and methods for reading data from memory cells 有权
标题翻译：用于从存储器单元读取数据的装置，计算机程序产品和方法
公开(公告)号：US07724587B2
公开(公告)日：2010-05-25
申请号：US12073842
申请日：2008-03-11
申请人： Seung-Hwan Song , Dong Hyuk Chae , Jun Jin Kong , Seung Hoon Lee , Dongku Kang
发明人： Seung-Hwan Song , Dong Hyuk Chae , Jun Jin Kong , Seung Hoon Lee , Dongku Kang
IPC分类号： G11C7/16
CPC分类号： G11C16/26 , G11C11/5642 , G11C2211/5634
摘要： In reading data from a memory cell, a determining circuit determines whether a received voltage value is within at least one first voltage range through a one-time read operation using a semiconductor device that senses an output current corresponding to the received voltage value. The at least one first voltage range includes a first upper limit voltage value and a first lower limit voltage value. A data value of the memory cell is set as a first data value when the received voltage value is within the specific voltage range.
摘要翻译：在从存储单元读取数据时，确定电路通过使用感测与接收电压值对应的输出电流的半导体器件的一次读取操作来确定接收电压值是否在至少一个第一电压范围内。所述至少一个第一电压范围包括第一上限电压值和第一下限电压值。当接收电压值在特定电压范围内时，存储单元的数据值被设置为第一数据值。

80. 发明申请

US20090207659A1 Memory device and memory data read method 有权
标题翻译：内存设备和内存数据读取方式
公开(公告)号：US20090207659A1
公开(公告)日：2009-08-20
申请号：US12219665
申请日：2008-07-25
申请人： Seung-Hwan Song , Heeseok Eun , Dong Hun Yu , Jun Jin Kong
发明人： Seung-Hwan Song , Heeseok Eun , Dong Hun Yu , Jun Jin Kong
IPC分类号： G11C16/26 , G11C16/34
CPC分类号： G11C16/26 , G11C11/5642 , G11C29/00
摘要： Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell.
摘要翻译：提供的是存储器件和存储器数据读取方法。方法设备可以包括：多比特单元阵列; 判定单元，其可以使用第一判定值来检测所述多比特单元阵列的多比特单元的阈值电压以从所述检测到的阈值电压中确定第一数据; 可以检测第一数据的错误位的错误检测器; 以及确定单元，其可以基于检测到的错误位的数量来确定判定单元是否使用第二判定值从检测到的阈值电压确定第二数据，第二判定值与第一判定值不同。通过这种方式，可以减少读取存储在多位单元中的数据所花费的时间。

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