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71. 发明授权

US08427620B2 Liquid crystal display device and electronic apparatus using the same and manufacturing method thereof 有权
标题翻译：液晶显示装置及使用其的电子装置及其制造方法
公开(公告)号：US08427620B2
公开(公告)日：2013-04-23
申请号：US12656721
申请日：2010-02-16
申请人： Soichi Saito , Shinya Niioka , Masayuki Jumonji , Hiroshi Tanabe , Masamichi Shimoda
发明人： Soichi Saito , Shinya Niioka , Masayuki Jumonji , Hiroshi Tanabe , Masamichi Shimoda
IPC分类号： G02F1/1343 , G02F1/1335
CPC分类号： G02F1/134363 , G02F1/136286 , G02F2001/136295
摘要： A liquid crystal display device of IPS mode includes an array of pixels arranged in a matrix pattern by crossing a plurality of video signal lines and a plurality of scanning signal lines each other. Each of the pixels is provided with at least a switching element. A transparent insulating film is provided on both signal lines, and a plurality of pixel electrodes, common electrodes and common lines are provided on the transparent insulating film. The common lines are formed in a grid-shaped pattern such that a first group of the common lines is made of a first conductor having lower reflectivity against optical light than that of metal while a second group of the common lines is made of a second conductor including a metal layer such that the first group and the second group are crossing each other along the video signal lines and the scanning signal lines.
摘要翻译： IPS模式的液晶显示装置包括通过使多条视频信号线和多条扫描信号线相互交叉而以矩阵状排列的像素阵列。每个像素设置有至少一个开关元件。在两条信号线上设置透明绝缘膜，在透明绝缘膜上设置多个像素电极，公共电极和公共线。公共线形成为格子状图案，使得第一组公共线由具有比光的反射率低的金属的第一导体制成，而第二组公共线由第二导体制成包括金属层，使得第一组和第二组沿着视频信号线和扫描信号线彼此交叉。

72. 发明授权

US08377805B2 Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film 有权
标题翻译：半导体薄膜，薄膜晶体管，其制造方法以及半导体薄膜的制造设备
公开(公告)号：US08377805B2
公开(公告)日：2013-02-19
申请号：US13359406
申请日：2012-01-26
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/2026 , H01L21/268 , H01L29/04 , H01L29/66757 , H01L29/786 , H01L29/78633 , H01L29/78675
摘要： A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less.
摘要翻译：提供一种制造半导体薄膜的方法，其可以形成具有均匀晶体生长方向的晶粒和尺寸大的晶粒以及使用上述方法的制造设备以及制造薄膜晶体管的方法。在上述方法中，通过施加被遮光元件部分遮挡的能量束，以遮光区域为起点进行熔融再结晶。光束的照射为硅薄膜的遮光区域提供能量，使得以遮光区域为起始点进行熔融和再结晶，并且使得遮光区域中的局部温度梯度为制成1200℃/μm以上。在制造方法中，用于施加能量束的光学系统的分辨率优选为4μm以下。

73. 发明申请

US20120129323A1 SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR THIN FILM 有权
标题翻译：半导体薄膜，薄膜晶体管，其制造方法和半导体薄膜的制造设备
公开(公告)号：US20120129323A1
公开(公告)日：2012-05-24
申请号：US13359406
申请日：2012-01-26
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： H01L21/20 , B23K26/00
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/2026 , H01L21/268 , H01L29/04 , H01L29/66757 , H01L29/786 , H01L29/78633 , H01L29/78675
摘要： A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less.
摘要翻译：提供一种制造半导体薄膜的方法，其可以形成具有均匀晶体生长方向的晶粒和尺寸大的晶粒以及使用上述方法的制造设备以及制造薄膜晶体管的方法。在上述方法中，通过施加被遮光元件部分遮挡的能量束，以遮光区域为起点进行熔融再结晶。光束的照射为硅薄膜的遮光区域提供能量，使得以遮光区域为起始点进行熔融和再结晶，并且使得遮光区域中的局部温度梯度为制成1200℃/μm以上。在制造方法中，用于施加能量束的光学系统的分辨率优选为4μm以下。

74. 发明授权

US08023051B2 Touch panel with elongated flexible printed circuit 有权
标题翻译：触摸面板采用细长柔性印刷电路
公开(公告)号：US08023051B2
公开(公告)日：2011-09-20
申请号：US11661078
申请日：2005-08-23
申请人： Hiroshi Tanabe , Seiichi Ishikura , Nobuhiko Hosobata
发明人： Hiroshi Tanabe , Seiichi Ishikura , Nobuhiko Hosobata
IPC分类号： G02F1/1335 , G06F3/041
CPC分类号： G06F3/0421 , H05K1/189
摘要： The material utilization efficiency of FPC's is improved, to provide a low cost touch panel. A touch panel 100 is constituted by: a rectangular transparent panel 104; and a plurality of light emitting elements 8a and a plurality of light receiving elements 8b provided at the peripheral portions of the transparent panel 104, for specifying the coordinates of targets of detection. An elongate FPC 106 is folded at a plurality of predetermined locations to be provided as a frame along the four sides 122a, 122b, 122c, and 122d of the transparent panel 104. The plurality of light emitting elements 8a are provided on the FPC 106 along two adjacent sides of the transparent panel 104, and the plurality of light receiving elements 8b are provided on the other two sides of the transparent panel 104 so as to face the light emitting elements 8a.
摘要翻译：提高FPC的材料利用效率，提供低成本的触摸屏。触摸面板100由矩形透明面板104构成; 以及设置在透明面板104的周边部分的多个发光元件8a和多个光接收元件8b，用于指定检测目标的坐标。细长的FPC 106在多个预定位置被折叠，以沿着透明板104的四个侧面122a，122b，122c和122d设置为框架。多个发光元件8a沿着FPC 106设置透明面板104的两个相邻侧，并且多个光接收元件8b设置在透明面板104的另一侧，以面向发光元件8a。

75. 发明申请

US20110013107A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS 有权
标题翻译：半导体器件，半导体器件制造方法，液晶显示器件和电子设备
公开(公告)号：US20110013107A1
公开(公告)日：2011-01-20
申请号：US12934659
申请日：2009-03-30
申请人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
发明人： Shigeru Mori , Isao Shouji , Hiroshi Tanabe
IPC分类号： H01L29/786 , H01L31/112 , H01L21/336 , G02F1/015
CPC分类号： H01L29/78621 , G02F2001/13685 , H01L21/26506 , H01L21/26513
摘要： A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.
摘要翻译：半导体器件包括支撑衬底; 支撑基板上的半导体膜; 半导体膜上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 以及通过将杂质元素引入半导体膜形成的源区和漏区。半导体膜的厚度在20nm〜40nm的范围内。在源极区域和沟道形成区域之间以及漏极区域和沟道形成区域之间分别设置有低浓度区域。低浓度区域的杂质浓度比源极区域和漏极区域的杂质浓度小，并且在支撑衬底侧的下表面侧区域中的杂质浓度小于上表面侧的杂质浓度对面的区域

76. 发明授权

US07691491B2 Monoaminofluorene compound and organic light-emitting device using the same 失效
标题翻译：单芴化合物和使用其的有机发光装置
公开(公告)号：US07691491B2
公开(公告)日：2010-04-06
申请号：US10525194
申请日：2003-08-12
申请人： Akihito Saitoh , Mizuho Hiraoka , Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe , Naoki Yamada , Chika Negishi
发明人： Akihito Saitoh , Mizuho Hiraoka , Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe , Naoki Yamada , Chika Negishi
IPC分类号： H01L51/54 , C07C211/00 , C07D209/82 , C07D221/02
CPC分类号： H01L51/0058 , C07C211/61 , C07C2603/18 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/005 , H01L51/0054 , H01L51/0055 , H01L51/0059 , H01L51/006 , H01L51/0067 , H01L51/0068 , H01L51/007 , H01L51/0072 , H01L51/0077 , H01L51/0078 , H01L51/0081 , H01L51/0094 , H01L51/5012 , H01L2251/308 , Y10S428/917
摘要： Novel monoaminofluorene compounds are provided, and organic light-emitting devices which exhibit good luminescence hue of extremely high purity and have optical output with high luminescence efficiency, high luminance and longer operating life are provided using the compounds. The monoaminofluorene compound represented by the following general formula [1]:
摘要翻译：提供了新颖的单氨基芴化合物，并且使用这些化合物提供了表现出高纯度的良好发光色调并且具有高发光效率，高亮度和更长使用寿命的光学输出的有机发光器件。由以下通式[1]表示的单氨基芴化合物：

77. 发明授权

US07637990B2 Air vent apparatus for water tube 有权
标题翻译：水管排气装置
公开(公告)号：US07637990B2
公开(公告)日：2009-12-29
申请号：US11341439
申请日：2006-01-30
申请人： Hiroshi Tanabe , Yasuhiro Hashimoto
发明人： Hiroshi Tanabe , Yasuhiro Hashimoto
IPC分类号： B01D19/00
CPC分类号： F16L55/07 , Y10T137/3084 , Y10T137/3118
摘要： An air vent apparatus for a water tube, comprising: an air separator pipe installed to have an axial direction along a vertical direction, and connected to a portion, where an air reservoir tends to occur, of the water tube for passage of water; and air vent means for venting air accumulating in the air separator pipe.
摘要翻译：一种用于水管的排气装置，其特征在于，包括：空气分离器管，其安装成具有沿着垂直方向的轴向，并且与所述水管通过的水管容易发生的部分相连接; 以及用于排出积聚在空气分离管中的空气的排气装置。

78. 发明申请

US20090314001A1 METHOD OF STARTING AND STOPPING GAS TURBINE AND START-AND-STOP CONTROL DEVICE 有权
标题翻译：启动和停止气体涡轮机和启动和停止控制装置的方法
公开(公告)号：US20090314001A1
公开(公告)日：2009-12-24
申请号：US12442338
申请日：2007-09-19
申请人： Satoshi Tanaka , Hiroshi Tanabe , Yasuhiro Hashimoto
发明人： Satoshi Tanaka , Hiroshi Tanabe , Yasuhiro Hashimoto
IPC分类号： F02C1/00
CPC分类号： F02C9/40 , F01D19/00 , F01D21/00 , F02C7/232 , F02C7/26
摘要： An object of the present invention is to provide a method of starting and stopping a gas turbine and a start-and-stop control device, which are capable of solving a problem of a failure in normally igniting a fuel gas due to a purge gas (nitrogen gas) remaining in a fuel gas pipe and thereby igniting the fuel gas stably. For this purpose, the start-and-stop control device performs control at the time of starting the gas turbine by sequentially performing: first exhaust gas duct purge for pushing out a fuel gas remaining in an exhaust gas duct with compressed air from a compressor; fuel gas pipe purge for pushing out nitrogen gas remaining in a fuel gas pipe between a fuel gas shutoff valve and a combustor at the time of stopping the gas turbine by the fuel gas by opening a fuel gas shutoff valve; and second exhaust gas duct purge for pushing out the fuel gas remaining in the exhaust gas duct at the time of the fuel gas pipe purge by the compressed air from the compressor, and then the fuel gas is supplied to the combustor by opening the fuel gas shutoff valve again and ignited.
摘要翻译：本发明的目的是提供一种启动和停止燃气轮机和起动和停止控制装置的方法，其能够解决由于吹扫气体而导致的燃料气体的正常点燃的故障的问题（氮气）残留在燃料气体管中，从而稳定地点燃燃料气体。为此，启动和停止控制装置在启动燃气轮机时，通过依次执行以下步骤来执行控制：第一废气管道吹扫，用于从压缩机推出压缩空气中的残留在废气管道中的燃料气体; 用于通过打开燃料气体截止阀，在燃料气体停止燃气轮机时，在燃料气体切断阀和燃烧器之间排出残留在燃料气体管道中的氮气的燃料气体管道吹扫; 以及第二废气管道吹扫，用于在通过来自压缩机的压缩空气吹扫燃料气体管道时推出残留在排气管道中的燃料气体，然后通过打开燃料气体将燃料气体供应到燃烧器关闭阀再次点火。

79. 发明授权

US07626648B2 Pixel circuit substrate, LCD apparatus and projection display apparatus having interlayer insulating film comprising a laminate of inorganic insulating material having a uniformly flat surface over TFT 有权
标题翻译：像素电路基板，LCD装置和具有层间绝缘膜的投影显示装置，其包括在TFT上具有均匀平坦表面的无机绝缘材料的叠层
公开(公告)号：US07626648B2
公开(公告)日：2009-12-01
申请号：US11242935
申请日：2005-10-05
申请人： Kunihiro Shiota , Hiroshi Tanabe
发明人： Kunihiro Shiota , Hiroshi Tanabe
IPC分类号： G02F1/136
CPC分类号： G02F1/136213 , G02F1/136227
摘要： A pixel circuit substrate includes a first interlayer insulating film which is made of an inorganic material at least in a source and drain regions of a thin film transistor. A contact hole is formed in an area above the source and drain regions of a thin film transistor in the first interlayer insulating film. A wiring layer is formed on the first interlayer insulating film, extends to an inner wall and a bottom surface of the contact hole. On a top surface of the wiring layer is formed a recess reflecting the shape of a contact hole. A second interlayer insulating film is formed on the wiring layer, embedded in the recess and has a flat top surface in an area above the thin film transistor. A storage capacitor on the second interlayer insulating film is disposed in the area above the thin film transistor.
摘要翻译：像素电路基板包括至少在薄膜晶体管的源极和漏极区域中由无机材料制成的第一层间绝缘膜。在第一层间绝缘膜中的薄膜晶体管的源区和漏区上方的区域中形成接触孔。布线层形成在第一层间绝缘膜上，延伸到接触孔的内壁和底面。在布线层的上表面形成反映接触孔形状的凹部。第二层间绝缘膜形成在布线层上，嵌入凹槽中，并且在薄膜晶体管上方的区域中具有平坦的顶表面。第二层间绝缘膜上的存储电容器设置在薄膜晶体管上方的区域中。

80. 发明授权

US07582933B2 Transistor with electrode-protecting insulating film 有权
标题翻译：具有电极保护绝缘膜的晶体管
公开(公告)号：US07582933B2
公开(公告)日：2009-09-01
申请号：US11483561
申请日：2006-07-11
申请人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
发明人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
IPC分类号： H01L29/772
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
摘要翻译：在绝缘基板上形成基底层，以局部方式形成半导体层。然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。用稀氢氟酸蚀刻栅极绝缘膜。然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

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