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71. 发明申请

US20110068360A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光元件，其制造方法和发光装置
公开(公告)号：US20110068360A1
公开(公告)日：2011-03-24
申请号：US12955620
申请日：2010-11-29
申请人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/60 , H01L33/32
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要翻译：本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小，凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

72. 发明申请

US20080237569A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光元件，其制造方法和发光装置
公开(公告)号：US20080237569A1
公开(公告)日：2008-10-02
申请号：US12037358
申请日：2008-02-26
申请人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime NAGO , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要翻译：本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小，凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

73. 发明申请

US20070014323A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070014323A1
公开(公告)日：2007-01-18
申请号：US11365531
申请日：2006-03-02
申请人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
发明人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3216
摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.
摘要翻译：这里公开了高可靠性半导体器件。激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

74. 发明申请

US20060214171A1 Semiconductor light-emitting element and light-emitting device 有权
标题翻译：半导体发光元件及发光元件
公开(公告)号：US20060214171A1
公开(公告)日：2006-09-28
申请号：US11352365
申请日：2006-02-13
申请人： Shinji Saito , Shinya Nunoue
发明人： Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.
摘要翻译：半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层并跨越第一个方向。

75. 发明授权

US6064079A Gallium nitride-based compound semiconductor device 失效
标题翻译：氮化镓系化合物半导体器件
公开(公告)号：US6064079A
公开(公告)日：2000-05-16
申请号：US115239
申请日：1998-07-14
申请人： Masahiro Yamamoto , Shinya Nunoue , Katsunobu Sasanuma , Masayuki Ishikawa
发明人： Masahiro Yamamoto , Shinya Nunoue , Katsunobu Sasanuma , Masayuki Ishikawa
IPC分类号： H01L33/06 , H01L33/32 , H01S5/00 , H01S5/042 , H01S5/30 , H01S5/323 , H01S5/343 , H01L33/00 , H01S3/19
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/025 , H01S5/0421 , H01S5/305 , H01L33/145 , H01S5/3063 , H01S5/34333
摘要： Disclosed is a gallium nitride-based compound semiconductor device, including a laminate film consisting of a plurality of layers stacked one upon the other to form a pn-junction and formed of InGaAlN. The semiconductor device also includes an n-side electrode and a p-side electrode to supply current to the pn-junction. Further included is a heat generation structure formed within the laminate film. The heat generation structure includes a low resistivity portion having a relatively low resistivity and a high resistivity portion having a relatively high resistivity and positioned adjacent to the low resistivity portion. The low resistivity portion and the high resistivity portion are formed within a single layer, differ from each other in carrier concentration, and formed by introducing an impurity into the single layer in a different dose such that the low resistivity portion is positioned closer to the p-side electrode than the high resistivity portion.
摘要翻译：公开了一种氮化镓基化合物半导体器件，其包括由多个层叠的多个层组成的叠层膜，以形成由InGaAlN形成的pn结。半导体器件还包括n侧电极和p侧电极以向pn结提供电流。还包括形成在层压膜内的发热结构。发热结构包括具有较低电阻率的低电阻率部分和具有相对较高电阻率并且邻近低电阻率部分定位的高电阻率部分。低电阻率部分和高电阻率部分形成在单层内，在载流子浓度上彼此不同，并且通过以不同的剂量将杂质引入单层而形成，使得低电阻率部分更靠近p 比电阻率高的部分。

76. 发明授权

US6015979A Nitride-based semiconductor element and method for manufacturing the same 有权
标题翻译：氮化物系半导体元件及其制造方法
公开(公告)号：US6015979A
公开(公告)日：2000-01-18
申请号：US143560
申请日：1998-08-28
申请人： Lisa Sugiura , Masayuki Ishikawa , Shinya Nunoue , Masaaki Onomura , Masahiro Yamamoto
发明人： Lisa Sugiura , Masayuki Ishikawa , Shinya Nunoue , Masaaki Onomura , Masahiro Yamamoto
IPC分类号： H01L33/00 , H01L33/02 , H01L27/15 , H01L23/58 , H01L31/12 , H01L31/153
CPC分类号： H01L33/025 , H01L33/007
摘要： Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.
摘要翻译：氮化物系半导体元件包括第一层，形成在第一层上的掩模，并且具有多个开口部分，形成在掩模上的氮化物基化合物半导体层，所述氮化物基化合物半导体层包括具有穿线的第一区域以这样的方式产生的位错，即在掩模中的多个开口部分的两个相邻的开口部分中的大致中间部分中，多个位错在垂直方向上延伸到掩模的表面，第二区域包括部分除了中间部分之外并且没有位错，以及形成在半导体层上的期望的元件结构。

77. 发明授权

US06242761B1 Nitride compound semiconductor light emitting device 失效
标题翻译：氮化物半导体发光元件
公开(公告)号：US06242761B1
公开(公告)日：2001-06-05
申请号：US09026941
申请日：1998-02-20
申请人： Hidetoshi Fujimoto , John Rennie , Masahiro Yamamoto , Masayuki Ishikawa , Shinya Nunoue , Lisa Sugiura
发明人： Hidetoshi Fujimoto , John Rennie , Masahiro Yamamoto , Masayuki Ishikawa , Shinya Nunoue , Lisa Sugiura
IPC分类号： H01L2972
CPC分类号： H01L33/145 , H01L33/32 , H01S5/2205 , H01S5/2206 , H01S5/2214 , H01S5/2226 , H01S5/2231 , H01S5/32341
摘要： In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.
摘要翻译：为了消除常规氮化物化合物半导体激光器结构中的问题，即由p型层中的高电阻引起的高操作电压和电极的高接触电阻，由干蚀刻引起的晶体损坏，电流不足注入，并且需要高电流密度，氮化物化合物半导体发光器件具有由n型B（1-xyz）In x AlyGazN（0≤x≤1,0<= y <= 1）形成的电流阻挡层，0 <= z <= 1）含有预定金属的氧化物的单晶，碳和表现出p型和n型导电性的杂质，或i型B（1-xyz）In x AlyGazN（0 <= x < 1，0 <= y <= 1，0 <= z <= 1）其中载体被氢或氧灭活以实现内部电流阻挡结构而不需要干法蚀刻的单晶。通过施加反向偏置电压，半导体只能沿着电流路径被激活，并且剩余区域被用作电流阻挡层。当n侧电极具有独特的三层结构时，承诺了接触电阻的降低和良好的引线接合。

78. 发明授权

US06316785B1 Nitride-compound semiconductor device 有权
标题翻译：氮化物化合物半导体器件
公开(公告)号：US06316785B1
公开(公告)日：2001-11-13
申请号：US09418025
申请日：1999-10-14
申请人： Shinya Nunoue , Masahiro Yamamoto
发明人： Shinya Nunoue , Masahiro Yamamoto
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S5/0213 , H01S5/2231 , H01S5/3072 , H01S5/3202 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A GaAlInBN systems semiconductor device is spaced apart from a substrate by a layer for reducing the propagation of a dislocation. This layer has a protrusion or protrusions, each having sidewalls on which a single crystal is exposed.
摘要翻译： GaAlInBN系统半导体器件通过用于减少位错传播的层与衬底间隔开。该层具有突起或突起，每个突起或突起均具有暴露单晶的侧壁。

79. 发明授权

US5905275A Gallium nitride compound semiconductor light-emitting device 失效
标题翻译：氮化镓化合物半导体发光器件
公开(公告)号：US5905275A
公开(公告)日：1999-05-18
申请号：US876739
申请日：1997-06-16
申请人： Shinya Nunoue , Masahiro Yamamoto
发明人： Shinya Nunoue , Masahiro Yamamoto
IPC分类号： H01L33/00 , H01L33/32 , H01L33/38 , H01L23/13
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/32 , H01L33/24
摘要： A gallium nitride compound semiconductor light-emitting device uses a sapphire substrate as a support and has n- and p-type electrodes on the top and bottom surfaces. A trench is formed in the sapphire substrate. This trench has two side wall surfaces which extend from the top surface to the bottom surface and so incline as to converge downward. A buffer layer is formed on the sapphire substrate. A gallium nitride compound semiconductor multiple layer having an n-type layer and a p-type layer are formed on the buffer layer. This semiconductor multiple layer has two side portions arranged along the two side wall surfaces of the trench and a central portion positioned between these two side portions and formed integrally with the two side portions. N- and p-type electrodes are so formed as to oppose each other on the two sides of the central portion of the semiconductor multiple layer.
摘要翻译：氮化镓系化合物半导体发光元件使用蓝宝石基板作为支撑体，在上下表面具有n型和p型电极。在蓝宝石衬底中形成沟槽。该沟槽具有从顶表面延伸到底表面的两个侧壁表面，因此倾斜以向下会聚。在蓝宝石衬底上形成缓冲层。在缓冲层上形成具有n型层和p型层的氮化镓化合物半导体多层。该半导体多层具有沿着沟槽的两个侧壁表面布置的两个侧面部分和位于这两个侧部之间的中心部分并且与两个侧部分一体地形成。 N型和p型电极在半导体多层的中心部分的两侧形成为彼此相对。

80. 发明授权

US09105810B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09105810B2
公开(公告)日：2015-08-11
申请号：US13404607
申请日：2012-02-24
申请人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
发明人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。第一半导体层是第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并且是第二导电类型。反射电极设置在第二半导体层上并且包括Ag。氧化物层设置在反射电极上。氧化物层是绝缘的并且具有第一开口。含氧层设置在氧化物层上。含氮层是绝缘的，并且具有与第一开口连通的第二开口。

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