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    • 74. 发明授权
    • Method for fabricating a thin-film transistor
    • 薄膜晶体管的制造方法
    • US5470768A
    • 1995-11-28
    • US102248
    • 1993-08-05
    • Ken-ichi YanaiTsutomu TanakaKoji OhgataYutaka TakizawaKen-ichi OkiTakuya Hirano
    • Ken-ichi YanaiTsutomu TanakaKoji OhgataYutaka TakizawaKen-ichi OkiTakuya Hirano
    • G02F1/1368H01L21/205H01L21/285H01L21/336H01L29/45H01L29/786H01L21/86
    • H01L29/78696H01L21/0242H01L21/02422H01L21/02532H01L21/02576H01L21/0262H01L21/28525H01L29/458H01L29/66757H01L29/66765H01L29/78603H01L29/78618G02F1/1368
    • To form a contact layer on source and drain electrodes of a stagger-type TFT, a conductive material is selectively sticked to the surface of the source and drain electrodes and a contact layer is selectively deposited by using the conductive material as growth species to form an active semiconductor layer on the contact layer. For an inverted-stagger-type TFT, a conductive material is selectively deposited on the surface of a contact layer to use the selectively deposited conductive material as source and drain electrodes so that patterning is unnecessary. To selectively deposit a contact layer of a TFT by alternately repeating etching and deposition, the temperature for the etching is set to 200.degree. C. or lower. A contaminated layer on the surface of a semiconductor film serving as an active semiconductor layer and contact layer of a TFT is removed by plasma at the temperature of 200.degree. C. or lower. For a stagger-type thin-film transistor, the hydrogen or halogen content of an insulating film serving as the substrate of source and drain electrodes is increased. For an inverted-stagger thin-film transistor, the hydrogen or halogen content of an insulating film serving as a channel protective film is increased. Thus, the etching rate of the surfaces of these insulating films by plasma increases.
    • 为了在交错型TFT的源极和漏极上形成接触层,导电材料选择性地粘附到源电极和漏电极的表面,并且通过使用导电材料作为生长物质选择性地沉积接触层,以形成 接触层上的有源半导体层。 对于反交错型TFT,在接触层的表面上选择性地沉积导电材料,以使用选择性沉积的导电材料作为源极和漏极,使得不需要图案化。 为了通过交替重复蚀刻和沉积来选择性地沉积TFT的接触层,蚀刻温度设定为200℃以下。 用作有源半导体层的半导体膜的表面上的污染层和TFT的接触层通过等离子体在200℃或更低的温度下去除。 对于错开型薄膜晶体管,增加了用作源极和漏极电极的衬底的绝缘膜的氢或卤素含量。 对于倒置的薄膜晶体管,作为沟道保护膜的绝缘膜的氢或卤素含量增加。 因此,通过等离子体的这些绝缘膜的表面的蚀刻速率增加。
    • 75. 发明授权
    • Coupling device of charging connector assembly for electric car
    • 电动汽车充电连接器组件联轴器
    • US5429524A
    • 1995-07-04
    • US226943
    • 1994-04-13
    • Shigekazu WakataHikaru ItouSho MiyazakiTsutomu TanakaEiji Saijo
    • Shigekazu WakataHikaru ItouSho MiyazakiTsutomu TanakaEiji Saijo
    • H01R13/629H02J7/00H01R13/453
    • B60L11/1818B60L3/0069H01R13/629H02J7/0045Y02T10/7005Y02T10/7072Y02T90/14
    • A coupling device interconnects a car connector BC and a charger connector SC positively by a small force to charge a battery in an electric car. After incompletely coupling, when an operation lever 8 together with a grip 32 are grasped, a sector gear 16 is turned to an anticlockwise direction and a pinion 15 is rotated to the anticlockwise direction through an intermediate gear 17. Thus a coupling plate 10 is moved from an advanced position to a retracted position through engagement of the pinion 15 and a rack 13. Distal ends of the coupling plates 10 are closed during a former movement of the plates so that windows 21 in the plates receive projections 22 on a connector housing of a car connector BC. A connector housing 2 of a charger connector SC together with a body 3 are drawn into the housing 1 during a latter movement of the plates, thereby completely interconnect both connectors BC and SC. When the lever 8 returns to an opening position, the coupling plate 10 is backed from the retracted position to return the housing 2 together with the body 3 and detach the housing 1. When the body 3 is pulled, both connectors BC and SC are separated.
    • 耦合装置通过小的力将汽车连接器BC和充电器连接器SC正面地互连,以对电动汽车中的电池充电。 在不完全连接之后,当操作杆8与把手32一起被抓住时,扇形齿轮16转向逆时针方向,小齿轮15通过中间齿轮17转动到逆时针方向。因此,联接板10移动 通过小齿轮15和齿条13的接合从先进位置到缩回位置。联接板10的远端在板的先前移动期间关闭,使得板中的窗口21接收连接器壳体上的突起22 汽车连接器BC。 充电器连接器SC与主体3一起的连接器壳体2在板的后续运动期间被吸入壳体1中,从而完全互连两个连接器BC和SC。 当杆8返回到打开位置时,联接板10从缩回位置支撑,以使壳体2与主体3一起返回并拆下壳体1.当主体3被拉动时,两个连接器BC和SC分离 。
    • 76. 发明授权
    • Resistor-provided UHV breaker having delaying/operating mechanism for
making and breaking main contacts and resistor contacts
    • 具有电阻器的特高压断路器具有用于制造和断开主触点和电阻触点的延迟/操作机构
    • US5424504A
    • 1995-06-13
    • US135547
    • 1993-10-14
    • Tsutomu TanakaShigeki Nishizumi
    • Tsutomu TanakaShigeki Nishizumi
    • H01H33/59H01H33/16H01H33/42H01H33/64H01H33/70H01H33/91
    • H01H33/168
    • A resistor-provided UHV breaker has a tank sealing an insulating gas therein, a main contact unit located in the tank, a resistor unit connected parallel to the main contact unit, a resistor contact unit located in the tank, a main contact making/breaking unit for making and breaking the main contact unit, and a resistor contact making/breaking unit for making and breaking the resistor contact unit. Further, the breaker has a coupling unit for coupling the main contact making/breaking unit with the resistor contact making/breaking unit. The coupling unit drives the main contact making/breaking unit together with the resistor contact making/breaking unit during closing operation of the main contact unit, and drives the main contact making/breaking unit and the resistor contact making/breaking unit, independently, during breaking operation of the main contact unit.
    • 电阻提供的UHV断路器具有在其中密封绝缘气体的罐,位于罐中的主接触单元,与主接触单元并联连接的电阻单元,位于罐中的电阻器接触单元,主接触/断开 用于制造和断开主接触单元的单元,以及用于制造和断开电阻器接触单元的电阻接触断开单元。 此外,断路器具有用于将主触点断开单元与电阻器接触制动/断开单元联接的联接单元。 耦合单元在主触点单元关闭操作期间与电阻触点断开单元一起驱动主触点断开单元,并在主触头断开单元和电阻触点断开单元期间独立驱动 主接触单元的断开操作。
    • 78. 发明授权
    • Low-temperature showcase
    • 低温展示柜
    • US4813241A
    • 1989-03-21
    • US85940
    • 1987-08-14
    • Hideaki HurutachiTakashi TakizawaTsutomu Tanaka
    • Hideaki HurutachiTakashi TakizawaTsutomu Tanaka
    • F25B5/00F25D21/12A47F3/04
    • F25B5/00F25D21/12F25B2347/021F25D2317/0684
    • A low-temperature showcase comprises a heat insulated wall, on the top of which an opening for putting-into or taking-out commodities is formed. The inside of the heat insulated wall is divided into an air passage and a storage chamber thereover by a dividing plate which is installed inside this heat insulated wall in a nearly horizontal fashion. The air passage is formed in a manner that the cross-section thereof is of a U-shape, and the storage chamber is formed surrounded by this air passage. At both ends of the air passage, vent ports are formed at the positions facing each other through the opening of the heat insulated wall inbetween. The air passage is divided into two parts by a fan case corresponding to the respective vent ports and a blast fan which can rotate reversibly is supported by this fan case. In each halved air passage, an evaporator is installed in the vicinity of the vent port, and when one of the evaporators is put in cooling operation, the other evaporator is subjected to defrosting. An electric heater is installed between each vent port and each evaporator, and these electric heaters are energized when the corresponding evaporator is to be defrosted. By means of a thermo-switch, energizing of the electric heater is stopped when the air temperature in the air passage rises above a predetermined valve during energizing the electric heater.
    • 低温展示柜包括隔热壁,顶部形成有用于投入或取出商品的开口。 绝热壁的内部由几乎水平的方式安装在该隔热壁内的分隔板分隔成空气通道和储存室。 空气通道以其横截面为U形的方式形成,并且储存室形成为被该空气通道包围。 在空气通道的两端,排气口形成在彼此相对的位置处,隔着隔热壁的开口。 空气通道由对应于各个通气口的风扇壳体分成两部分,并且由该风扇壳体支撑可逆地旋转的鼓风扇。 在每一个半空气通道中,蒸发器安装在通气口附近,当其中一个蒸发器进入制冷运行时,另一个蒸发器进行除霜。 在每个排气口和每个蒸发器之间安装一个电加热器,当相应的蒸发器要除霜时,这些电加热器通电。 通过热电开关,当通电电加热器时,当空气通道中的空气温度上升到高于预定阀门时,电加热器通电停止。
    • 80. 发明授权
    • Buffer storage control system having a priority circuit
    • 具有优先电路的缓冲存储控制系统
    • US4800490A
    • 1989-01-24
    • US924329
    • 1986-10-29
    • Tsutomu TanakaYuji Oinaga
    • Tsutomu TanakaYuji Oinaga
    • G06F12/08G06F12/00
    • G06F12/0888G06F12/0859
    • A buffer storage control system is provided having a central processing unit having a buffer storage for storing a part of the content of a main storage, wherein, when a block transfer from the main storage to the buffer storage is carried out, data to be processed is transferred directly to an arithmetic unit or an instruction processing unit via a by-pass operation. The transferred data is then written into the buffer storage and only the portion written in a block can be read, even if not all of the data of one block is written into the buffer storage. During the period from the end of the by-pass operation to the end of the write operation into the buffer storage, with respect to data related to the by-pass operation and data transferred from the main storage, subsequent to the data related to the by-pass operation, the access to the buffer storage based upon a subsequent request for access is inhibited.
    • 提供了具有中央处理单元的缓冲存储控制系统,该中央处理单元具有用于存储主存储器的内容的一部分的缓冲存储器,其中当执行从主存储器到缓冲存储器的块传送时,要处理的数据 通过旁路操作直接传送到运算单元或指令处理单元。 然后将传送的数据写入缓冲存储器,只有写入块的部分才能被读取,即使不是一个块的全部数据被写入缓冲存储器。 在从旁路操作结束到写操作结束到缓冲存储器的期间,对于与旁路操作有关的数据和从主存储器传送的数据,在与 旁路操作,禁止基于随后的访问请求对缓冲存储器的访问。