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    • 73. 发明申请
    • Different Combinations of Wordline Order and Look-Ahead Read to Improve Non-Volatile Memory Performance
    • 不同组合的字词顺序和前瞻读取,以提高非易失性存储器性能
    • US20090237999A1
    • 2009-09-24
    • US12051492
    • 2008-03-19
    • Yan Li
    • Yan Li
    • G11C16/04G11C16/06
    • G11C11/5628G11C2211/5648
    • For a non-volatile memory storing three or more bits per cell, pages of data are written in an order where more than one, but less than all of the logical pages that a physical page along a wordline can store are written concurrently. More than one, but less than all of the logical pages that a physical page along a wordline can store are then written concurrently on an adjacent wordline. The process then comes back to the first wordline and writes at least one more logical page. A process is also described where one or more logical pages are written into a physical page along a wordline, after which one or more logical pages are written into a physical page along an adjacent wordline. A read operation is then performed on the first wordline and the resultant read is corrected based on the result of programming the adjacent wordline. This corrected read is then used in writing at least one more logical page in a second programming operation on the first wordline.
    • 对于每个单元存储三个或更多位的非易失性存储器,以与字线一起的物理页面可以存储的所有逻辑页面多于一个但是小于同时写入的所有逻辑页面的顺序写入数据页。 但是,一个字面上可以存储的物理页面上的所有逻辑页面都可以同时写在相邻的字线上。 然后,该过程返回到第一个字线,并写入至少一个逻辑页面。 还描述了一个过程,其中一个或多个逻辑页面沿着字线被写入物理页面,之后将一个或多个逻辑页面沿着相邻字线写入物理页面。 然后对第一字线执行读取操作,并且基于相邻字线的编程结果校正所得到的读取。 然后,在第一字线上的第二编程操作中,将该校正后的读取写入至少一个逻辑页面。
    • 74. 发明申请
    • Adaptive Algorithm in Cache Operation with Dynamic Data Latch Requirements
    • 自适应算法在缓存操作中具有动态数据锁存要求
    • US20090237998A1
    • 2009-09-24
    • US12051462
    • 2008-03-19
    • Yan LiAnne Pao-Ling Koh
    • Yan LiAnne Pao-Ling Koh
    • G11C16/04G11C16/06G11C7/00
    • G11C16/10G06F12/0855G06F2212/2022G11C7/1039G11C7/1078G11C7/1087G11C11/5628G11C11/5642G11C2207/2245G11C2211/5623G11C2211/5642G11C2211/5643
    • A non-volatile memory can perform a first operation (such as a write, for example) on a designated group of one or more addressed pages using a first set of data stored in the corresponding set of data latches and also receive a request for a second operation (such as a read, for example) that also uses some of these corresponding data latches with a second set of data. During the first operation, when at least one latch of each set of the corresponding become available for the second operation, the memory whether there are a sufficient number of the corresponding set of data latches to perform the second operation during the first operation; if not, the second operation is delayed. The memory subsequently can perform the second operation during the first operation when a sufficient number of latches become available; and if, in response to determining whether there are a sufficient number of the corresponding set of data latches to perform the second operation it is determined that there are a sufficient number, performing the second operation during the first operation.
    • 非易失性存储器可以使用存储在相应的数据锁存器组中的第一组数据来执行一个或多个寻址页面的指定组上的第一操作(例如写入),并且还接收对 还使用具有第二组数据的这些相应的数据锁存器中的一些的第二操作(例如读取)。 在第一操作期间,当对应的每组的至少一个锁存器变得可用于第二操作时,存储器是否存在足够数量的对应的一组数据锁存器以在第一操作期间执行第二操作; 如果没有,则第二操作被延迟。 当足够数量的锁存器变得可用时,存储器随后可以在第一操作期间执行第二操作; 并且如果响应于确定是否存在足够数量的对应的数据锁存器组来执行第二操作,则确定存在足够的数量,在第一操作期间执行第二操作。
    • 75. 发明申请
    • METHOD AND SYSTEM FOR INVOKING JUST-IN-TIME DEBUGGER
    • 用于调用即时调试器的方法和系统
    • US20090178028A1
    • 2009-07-09
    • US12350820
    • 2009-01-08
    • Steven Francis BestYan LiYao QiWei Ying YuYong Zheng
    • Steven Francis BestYan LiYao QiWei Ying YuYong Zheng
    • G06F11/36
    • G06F11/3664G06F9/45512G06F9/541
    • A method and system for invoking Just-In-Time debugger is described, which can provide more efficient JIT debugging for complex code mixed applications. A method for invoking a Just-In-Time (JIT) debugger according to one embodiment includes checking a code type of a code address where a JIT debugging request is triggered from a process of a code-mixed application in response to the JIT debugging request from the process; acquiring corresponding JIT debugging information for different code types of the code-mixed application; and invoking a JIT debugger corresponding to the code type in response to the checked code type of the code address in the process and the acquired corresponding JIT debugging information.
    • 描述了一种用于调用即时调试器的方法和系统,可以为复杂的代码混合应用程序提供更有效的JIT调试。 根据一个实施例的用于调用即时(JIT)调试器的方法包括:响应于JIT调试请求,从代码混合应用程序的过程检查JIT调试请求被触发的代码地址的代码类型 从过程中 为代码混合应用程序的不同代码类型获取相应的JIT调试信息; 以及响应于所述处理中的代码地址的所检查的代码类型和所获取的相应的JIT调试信息来调用与所述代码类型相对应的JIT调试器。
    • 76. 发明申请
    • INFORMATION PROCESSING DEVICE AND INTEGRATED INFORMATION SYSTEM
    • 信息处理设备和集成信息系统
    • US20090164945A1
    • 2009-06-25
    • US12337489
    • 2008-12-17
    • Yan Li
    • Yan Li
    • G06F3/048
    • G06F3/04842G06F2203/04802
    • An information processing device and integrated information system in which many resources are accessible by a simple, clear user interface are provided. The information processing device includes a use interface including displayed faces of a 3D polyhedron icon used to select information to be executed from multiple pieces of information. The multiple pieces of information are allocated to the faces. The 3D polyhedron icon is a parallelepiped for example. By rotating the 3D polyhedron icon horizontally and vertically, a face to be displayed can be switched. The user interface displays an index showing the rotational direction of the 3D polyhedron icon.
    • 提供了一种信息处理设备和集成信息系统,其中许多资源可通过简单,清晰的用户界面访问。 信息处理装置包括使用界面,其包括用于从多条信息中选择要执行的信息的3D多面体图标的显示面。 将多条信息分配给面部。 3D多面体图标是例如平行六面体。 通过水平和垂直旋转3D多面体图标,可以切换要显示的脸部。 用户界面显示显示3D多面体图标旋转方向的索引。
    • 78. 发明申请
    • Non-Volatile Memory and Method with Shared Processing for an Aggregate of Read/Write Circuits
    • 非易失性存储器和具有共享处理的方法,用于读/写电路的集合
    • US20090103369A1
    • 2009-04-23
    • US12342679
    • 2008-12-23
    • Raul-Adrian CerneaYan LiShahzad KhalidSiu Lung Chan
    • Raul-Adrian CerneaYan LiShahzad KhalidSiu Lung Chan
    • G11C16/06G11C11/10
    • G11C16/26G11C11/5642
    • A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar stacks of components. Redundant circuits such as a processor for processing data among stacks each associated with multiple memory cells are factored out. The processor is implemented with an input logic, a latch and an output logic. The input logic can transform the data received from either the sense amplifier or the data latches. The output logic further processes the transformed data to send to either the sense amplifier or the data latches or to a controller. This provides an infrastructure with maximum versatility and a minimum of components for sophisticated processing of the data sensed and the data to be input or output.
    • 能够并行地读取和写入具有多个读/写电路的大量存储单元的非易失性存储器件具有将多个读/写电路中的冗余降至最低的架构。 多个读/写电路被组织成一组类似的组件堆叠。 考虑冗余电路,例如用于处理每个与多个存储器单元相关联的堆栈之间的数据的处理器。 处理器由输入逻辑,锁存器和输出逻辑实现。 输入逻辑可以转换从读出放大器或数据锁存器接收到的数据。 输出逻辑进一步处理变换的数据以发送到读出放大器或数据锁存器或控制器。 这提供了具有最大通用性的基础设施和用于对所感测的数据进行复杂处理和要输入或输出的数据的最少组件。
    • 79. 发明授权
    • Method for configuring compensation
    • 补偿方式
    • US07506113B2
    • 2009-03-17
    • US11458996
    • 2006-07-20
    • Yan Li
    • Yan Li
    • G06F12/00G11C11/34G11C16/04G11C16/06
    • G11C16/0483G11C11/5628G11C11/5642G11C16/3418G11C16/3427G11C16/3454
    • Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).
    • 存在于非易失性存储单元的浮动栅极(或其他电荷存储元件)上的表观电荷的变化可能发生,因为基于存储在相邻浮动栅极(或其它相邻电荷存储元件)中的电荷的电场的耦合 )。 为了补偿该耦合,给定存储器单元的读取或编程过程可以考虑相邻存储器单元的编程状态。 为了确定是否需要补偿,可以执行包括感测关于相邻存储器单元的编程状态的信息(例如,在相邻位线或其他位置上)的处理。
    • 80. 发明授权
    • Method for programming of multi-state non-volatile memory using smart verify
    • 使用智能验证来编程多状态非易失性存储器的方法
    • US07492634B2
    • 2009-02-17
    • US11862157
    • 2007-09-26
    • Yan LiLong Pham
    • Yan LiLong Pham
    • G11C16/04
    • G11C11/5628G11C16/0483G11C16/12G11C16/3454G11C16/3459G11C2211/5621
    • In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a higher, intermediate VTH distribution. Subsequently, the non-volatile storage elements with the first VTH distribution either remain there, or are programmed to a second VTH distribution, based on an upper page of data. The non-volatile storage elements with the intermediate VTH distribution are programmed to third and fourth VTH distributions. The non-volatile storage elements being programmed to the third VTH distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth VTH distribution is initiated after one of the identified non-volatile storage elements transitions to the third VTH distribution from the intermediate VTH distribution.
    • 在非易失性存储器中,自适应地设定程序验证的启动,从而减少编程时间。 在一种方法中,非易失性存储元件基于较低数据页被编程以具有落在第一VTH分布或更高的中间VTH分布内的电压阈值(VTH)。 随后,具有第一VTH分配的非易失性存储元件基于数据的上部页面保留在那里,或被编程到第二VTH分发。 具有中间VTH分布的非易失性存储元件被编程为第三和第四VTH分布。 被编程到第三VTH分配的非易失性存储元件被特别地识别和跟踪。 被编程到第四VTH分布的非易失性存储元件的验证在所识别的非易失性存储元件中的一个从中间VTH分布转换到第三VTH分布之后启动。