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71. 发明申请

US20060186381A1 Superconductive articles having density characteristics 有权
标题翻译：具有密度特性的超导制品
公开(公告)号：US20060186381A1
公开(公告)日：2006-08-24
申请号：US11063784
申请日：2005-02-23
申请人： Venkat Selvamanickam , Drew Hazelton , Yunfei Qiao
发明人： Venkat Selvamanickam , Drew Hazelton , Yunfei Qiao
IPC分类号： H01B1/12
CPC分类号： H01L39/2461 , H01F27/2847 , H01F36/00 , H02K3/02 , H02K55/00 , Y02E40/62 , Y02E40/66 , Y10S428/93 , Y10S505/877 , Y10T29/49014
摘要： A superconductive article is disclosed, having a substrate a buffer layer overlying the substrate, and a superconductive layer overlying the buffer layer. According to embodiments, the article may have low density characteristics, associated with the article as a whole and/or individual layers of the article. The article may be embodied in the form of long length conductors, coiled long length conductors, and machines incorporating such coils, for example.
摘要翻译：公开了一种超导制品，其具有衬底覆盖衬底的缓冲层和覆盖缓冲层的超导层。根据实施例，制品可以具有与整个制品和/或制品的各个层相关联的低密度特性。例如，物品可以以长长度导体，卷绕长长度导体和结合这种线圈的机器的形式实施。

72. 发明申请

US20060115580A1 Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors 有权
标题翻译：可用于制造超导导体的化学气相沉积（CVD）装置
公开(公告)号：US20060115580A1
公开(公告)日：2006-06-01
申请号：US11324511
申请日：2006-01-03
申请人： Venkat Selvamanickam , Hee-Gyoun Lee
发明人： Venkat Selvamanickam , Hee-Gyoun Lee
IPC分类号： B05D5/12 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/408 , C23C16/455 , C23C16/45517 , C23C16/45591 , C23C16/545 , H01L39/2441 , Y10T29/49014
摘要： A chemical vapor deposition (CVD) apparatus usable in the manufacture of a superconducting conductor on an elongate substrate is disclosed. The CVD apparatus includes a reactor, at least one substrate heater, and at least one precursor injector having a longitudinal flow distributor. Optionally, the CVD apparatus may include one of a transverse lateral flow restrictor, a shield for protecting a low-temperature region of the substrate, and both.
摘要翻译：公开了可用于在细长衬底上制造超导导体的化学气相沉积（CVD）装置。 CVD装置包括反应器，至少一个基板加热器和至少一个具有纵向流分配器的前驱物喷射器。可选地，CVD装置可以包括横向横向限流器，用于保护衬底的低温区域的屏蔽件和两者。

73. 发明授权

US07025826B2 Methods for surface-biaxially-texturing amorphous films 有权
标题翻译：表面双轴织构非晶膜的方法
公开(公告)号：US07025826B2
公开(公告)日：2006-04-11
申请号：US10643403
申请日：2003-08-19
申请人： Venkat Selvamanickam , Xuming Xiong
发明人： Venkat Selvamanickam , Xuming Xiong
IPC分类号： C30B1/02
CPC分类号： C30B25/18 , C30B29/22 , Y10S505/929
摘要： Methods for biaxially-texturing a surface-region of an amorphous material are disclosed, comprising depositing an amorphous material onto a substrate, and supplying active oxygen near the substrate during ion beam bombardment of the amorphous material to create an amorphous material having a biaxially textured surface, wherein the ion beam bombardment occurs at a predetermined oblique incident angle. Methods for producing high-temperature coated superconductors are also disclosed, comprising depositing an amorphous buffer film onto a metal alloy substrate, bombarding a surface-region of the amorphous buffer film with an ion beam at an oblique incident angle while supplying active oxygen to the surface-region of the amorphous buffer film in order to create a biaxially textured surface-region thereon, and growing a superconducting film on the biaxially textured surface-region of the amorphous buffer film to create a high-temperature coated superconductor.
摘要翻译：揭示了对非晶材料的表面区域进行双轴织构的方法，包括在衬底上沉积无定形材料，并在非晶材料的离子束轰击期间在衬底附近提供活性氧以产生具有双轴织构表面的无定形材料其中离子束轰击以预定的倾斜入射角发生。还公开了生产高温涂层超导体的方法，包括在金属合金基底上沉积无定形缓冲膜，用离子束以斜入射角轰击非晶缓冲膜的表面区域，同时向表面提供活性氧以在其上产生双轴织构化的表面区域，并在非晶缓冲膜的双轴纹理化表面区域上生长超导膜以产生高温涂覆的超导体。

74. 发明授权

US06998028B1 Methods for forming superconducting conductors 有权
标题翻译：形成超导导体的方法
公开(公告)号：US06998028B1
公开(公告)日：2006-02-14
申请号：US10949996
申请日：2004-09-24
申请人： Venkat Selvamanickam
发明人： Venkat Selvamanickam
IPC分类号： C23C14/34 , B05D5/12
CPC分类号： C23C14/3442 , C23C14/024 , C23C14/087 , H01L39/2461
摘要： A method for producing a superconducting conductor is disclosed, including providing a substrate, depositing a buffer film having a biaxial texture to overlie the substrate by reactive sputtering, and depositing a superconducting layer to overlie the buffer film. Deposition of the buffer film is carried out by exposing the substrate along a deposition zone to a material plume generated by bombarding a target in the presence of a magnetic field, the deposition zone having a length of at least 1.0 m. The assist ions may be generated from a gridless ion source. The buffer film may have a biaxial texture having an out-of-plane crystallographic texture represented by a mosaic spread of not greater than 30°.
摘要翻译：公开了一种用于制造超导体的方法，包括提供衬底，通过反应溅射沉积具有双轴纹理的缓冲膜覆盖在衬底上，以及沉积超导层以覆盖缓冲膜。缓冲膜的沉积是通过将衬底沿着沉积区暴露于通过在存在磁场的情况下轰击靶而产生的材料羽流而进行的，该沉积区的长度至少为1.0μm。辅助离子可以从无电子离子源产生。缓冲膜可以具有由不大于30°的马赛克扩展表示的面外晶体结构的双轴纹理。

75. 发明申请

US20050223984A1 Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors 审中-公开
标题翻译：可用于制造超导导体的化学气相沉积（CVD）装置
公开(公告)号：US20050223984A1
公开(公告)日：2005-10-13
申请号：US10821207
申请日：2004-04-08
申请人： Hee-Gyoun Lee , Venkat Selvamanickam
发明人： Hee-Gyoun Lee , Venkat Selvamanickam
IPC分类号： C23C16/00 , C23C16/40 , C23C16/448 , C23C16/54 , H01L39/24
CPC分类号： C23C16/45572 , C23C16/408 , C23C16/4481 , C23C16/4557 , C23C16/545 , H01L39/2441 , Y10S505/726 , Y10T29/49014
摘要： A chemical vapor deposition (CVD) apparatus including a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, and at least one precursor composition monitor. The precursor supply system includes at least one precursor source, at least one a delivery mechanism including at least one assist vehicle, at least one vaporizer for vaporizing a precursor provided by at least the at least one precursor source, and at least one vehicle for transporting at least the vaporized precursor from the precursor supply to the precursor injector of the CVD apparatus.
摘要翻译：一种化学气相沉积（CVD）装置，包括反应器，至少一个基板加热器，至少一个前体供应系统，至少一个前体喷射器和至少一个前体组合物监测器。前体供应系统包括至少一个前体源，至少一个输送机构，其包括至少一个辅助载体，至少一个用于蒸发由至少一个前体源提供的前体的蒸发器，以及至少一个用于输送的载体至少从前体供应物蒸发的前体至CVD设备的前体注入器。

76. 发明申请

US20050220986A1 Superconductor fabrication processes 审中-公开
标题翻译：超导体制造工艺
公开(公告)号：US20050220986A1
公开(公告)日：2005-10-06
申请号：US10816045
申请日：2004-04-01
申请人： Venkat Selvamanickam , Yunfei Qiao , Kenneth Lenseth
发明人： Venkat Selvamanickam , Yunfei Qiao , Kenneth Lenseth
IPC分类号： B05D5/12 , B08B3/02 , B08B3/10 , B08B3/12 , C23C14/14 , C23C14/48 , H01L39/24
CPC分类号： B08B3/10 , B08B3/022 , B08B3/123 , C23C14/14 , C23C14/3492 , C23C14/48 , H01L39/2454
摘要： A method of forming a superconductive device is disclosed, which calls for cleaning a substrate having a dimension ratio of not less than about 102, the cleaning including immersing the substrate in a fluid medium and subjecting the substrate to mechanical waves in the fluid medium, and depositing a superconductor layer to overlie the substrate.
摘要翻译：公开了一种形成超导装置的方法，其要求清洁具有不小于约10 2的尺寸比的基板，所述清洁包括将基板浸入流体介质中，并将基板流体介质中的机械波，以及沉积超导层以覆盖基底。

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