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    • 74. 发明授权
    • Gallium nitride based semiconductor laser and image exposure device
    • 基于氮化镓的半导体激光器和图像曝光装置
    • US07113530B2
    • 2006-09-26
    • US10329511
    • 2002-12-27
    • Kenji MatsumotoToshiro Hayakawa
    • Kenji MatsumotoToshiro Hayakawa
    • H01S5/00
    • B41J2/45H01S5/32341
    • In order to obtain a visually high quality image with excellent sharpness using a silver halide photosensitive material, it is necessary to reduce the ratio of EL light in the light output from a GaN based laser diode to 20% or less. For example, when the light intensity measured on a sheet of photosensitive paper is 0.05 mW, the thickness of a waveguide is 3 nm and the width of the waveguide is 3 μm, this condition is satisfied with a length of a resonator being 1 mm or less. In other words, a waveguide width W1 and a resonator length L are set such that the product of the waveguide width W1 and the resonator length L (W1·L) becomes 0.003 mm2 or less. This reduces the output ratio of the EL light, and a high quality image with excellent sharpness can be obtained when a silver halide photosensitive material is exposed.
    • 为了使用卤化银感光材料获得具有优异清晰度的视觉上高质量的图像,需要将从GaN基激光二极管输出的光的EL光的比例降低到20%以下。 例如,当在一张感光纸上测量的光强度为0.05mW时,波导的厚度为3nm,波导的宽度为3μm,该条件满足谐振器的长度为1mm或 减。 换句话说,波导宽度W 1和谐振器长度L被设定为使得波导宽度W 1和谐振器长度L(W 1·L)的乘积成为0.003mm以下2以下 。 这降低了EL光的输出比,并且当曝光卤化银感光材料时可以获得具有优异清晰度的高质量图像。
    • 75. 发明授权
    • Wireless microphone system, voice receiving apparatus, and wireless microphone
    • US06987949B2
    • 2006-01-17
    • US10283446
    • 2002-10-30
    • Shohei TaniguchiKenji Matsumoto
    • Shohei TaniguchiKenji Matsumoto
    • H04B15/00
    • H04R1/083H04R3/005H04R2420/07
    • Herein disclosed is a wireless microphone system comprising a plurality of wireless microphones each having a microphone storage area having a unique global identification element stored therein, each of the wireless microphones operative to collect a voice, convert the voice thus collected into an audio signal, and transmit the audio signal and the global identification element; and a voice receiving apparatus for receiving the audio signal and the global identification element from a wireless microphone. The voice receiving apparatus includes a storage section for storing an identification table including a plurality of local identification elements in association with a plurality of global identification elements. The voice receiving apparatus is operative to assign a local identification element to the wireless microphone in accordance with the global identification element with reference to the identification table stored in the storage section, and transmit the local identification element to the wireless microphone, and the wireless microphone is operative to receive the local identification element, store the local identification element in the microphone storage area, and communicate with the voice receiving apparatus with the local identification element thus stored.
    • 80. 发明授权
    • Semiconductor laser and fabricating method of the same
    • 半导体激光器及其制造方法相同
    • US06793388B2
    • 2004-09-21
    • US09873218
    • 2001-06-05
    • Kenji Matsumoto
    • Kenji Matsumoto
    • H01S500
    • H01S5/2231H01S5/0655H01S5/20H01S5/2036H01S5/204H01S5/205H01S5/2218
    • A semiconductor laser having an S-ARROW structure confining a basic lateral mode light between a pair of guide layers extending with a gap therebetween, which increases a precision of a shape of a guide portion, and is capable of stably emitting a light in the basic lateral mode. In the semiconductor laser having an activation layer and a plurality of layers in parallel with the activation layer, a first groove penetrating through at least some of the layers is formed, and a pair of second grooves extending to predetermined positions toward both sides from the first groove are formed in a specified layer among the layers through which the first groove penetrates. Furthermore, a material having a refractive index higher than that of the specified layer is filled up in the second grooves, thus forming two portions having a high refractive index.
    • 一种具有S-ARROW结构的半导体激光器,其将基本横向模式光限制在一对引导层之间延伸的引导层之间,其中引导部分之间具有间隙,从而提高了引导部分的形状的精度,并且能够稳定地发射基本上的光 横向模式。 在具有激活层和与激活层平行的多个层的半导体激光器中,形成穿过至少一些层的第一凹槽,并且形成从第一部分朝向两侧延伸到预定位置的一对第二凹槽 槽形成在第一槽穿过的层中的规定层中。 此外,折射率高于特定层的材料填充在第二槽中,从而形成具有高折射率的两部分。