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    • 72. 发明授权
    • Imaging apparatus and exposure control method
    • 成像设备和曝光控制方法
    • US07973830B2
    • 2011-07-05
    • US12161918
    • 2007-03-07
    • Satoshi Okamoto
    • Satoshi Okamoto
    • H04N5/235
    • G02B7/10G03B7/16G03B7/28G03B15/03G03B15/05G03B2215/0503H04N5/23212H04N5/2351H04N5/2352H04N2101/00
    • In a digital camera (10), an imaging sensitivity setting circuit (61) selects a pair of distance range selection parameters “A” and “B” according to a zoom position of a zoom lens (41), to compare an in-focus position of a focusing lens (43) with these parameters “A” and “B”, wherein the parameters “A” and “B” correspond to a farther distance and a nearer distance respectively. If the in-focus position is farther than the parameter “A”, the imaging sensitivity is set to a high level. If the in-focus position is in between these parameters “A” and “B”, the imaging sensitivity is set to a middle level. If the in-focus position is nearer than the parameter “B”, the imaging sensitivity is set to a low level. Based on the set imaging sensitivity level and a measured subject brightness value, a system controller (41) controls the exposure value and the flashlight volume.
    • 在数字照相机(10)中,成像灵敏度设定电路(61)根据变焦镜头(41)的变焦位置来选择一对距离范围选择参数“A”和“B”,以便比较对焦 具有这些参数“A”和“B”的聚焦透镜(43)的位置,其中参数“A”和“B”分别对应于更远的距离和更近的距离。 如果对焦位置比参数“A”更远,则将成像灵敏度设置为高电平。 如果对焦位置在这些参数“A”和“B”之间,则将成像灵敏度设置为中间水平。 如果对焦位置比参数“B”更接近,则将成像灵敏度设置为低水平。 基于设定的成像灵敏度水平和测量的对象亮度值,系统控制器(41)控制曝光值和手电筒体积。
    • 74. 发明申请
    • PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
    • 光电转换装置及制造光电转换装置的方法
    • US20100276772A1
    • 2010-11-04
    • US12810205
    • 2008-11-27
    • Ryo OzakiAkiko TsunemiTsutomu YamazakiSatoshi Okamoto
    • Ryo OzakiAkiko TsunemiTsutomu YamazakiSatoshi Okamoto
    • H01L27/14H01L31/18
    • H01L31/035281H01L31/022433H01L31/02245Y02E10/50
    • Provided are a photoelectric conversion device (10) having a first conductivity type semiconductor (1), a first main surface (1a) of the first conductivity type semiconductor (1) being provided with a concave portion (26, 27) formed therein, the photoelectric conversion device (10) including: a second conductivity type semiconductor (3) formed in the first main surface (1a) of the first conductivity type semiconductor (1), an inner wall surface of a through-hole (19), and a second main surface (1a) of the first conductivity type semiconductor (1); a light-receiving surface electrode (5a, 5c) formed to fill the concave portion (26, 27) in the first main surface (1a) of the first conductivity type semiconductor (1); a first electrode (2) formed on the second main surface (1c) of the first conductivity type semiconductor (1); a through-hole electrode portion (9) formed inside the through-hole (19) to be in contact with the second conductivity type semiconductor (3) in the inner wall surface of the through-hole (19); and a second electrode (7) formed on the second conductivity type semiconductor (3) in the second main surface (1a) of the first conductivity type semiconductor (1) to be in contact with the through-hole electrode portion (9), the light-receiving surface electrode (5a, 5c) and the second electrode (7) being electrically connected by the through-hole electrode portion (9); and a method of manufacturing the photoelectric conversion device (10).
    • 提供了具有第一导电型半导体(1)的光电转换装置(10),第一导电型半导体(1)的第一主表面(1a)在其中形成有凹部(26,27), 光电转换装置(10)包括:形成在第一导电类型半导体(1)的第一主表面(1a)中的第二导电类型半导体(3),通孔(19)的内壁表面,以及 第一导电型半导体(1)的第二主表面(1a); 形成为填充第一导电型半导体(1)的第一主表面(1a)中的凹部(26,27)的光接收表面电极(5a,5c) 形成在第一导电型半导体(1)的第二主表面(1c)上的第一电极(2); 在所述通孔(19)的内壁面内形成有与所述第二导电型半导体(3)接触的通孔电极部(9)。 以及形成在与所述通孔电极部(9)接触的所述第一导电型半导体(1)的所述第二主面(1a)中的所述第二导电型半导体(3)上的第二电极(7) 光接收表面电极(5a,5c)和第二电极(7)通过通孔电极部分(9)电连接; 以及制造光电转换装置(10)的方法。
    • 77. 发明申请
    • Novel Composite Chemical Conversion Coating Film, Multiple Layered Coating Film Using the Same and Process for Forming Multiple Layered Coating Film
    • 新型复合化学转化膜,使用其的多层涂膜和形成多层涂膜的方法
    • US20090208716A1
    • 2009-08-20
    • US12224563
    • 2007-03-05
    • Toshio KanekoSatoshi OkamotoMasanobu FutsuharaMakoto DoiEisaku Okada
    • Toshio KanekoSatoshi OkamotoMasanobu FutsuharaMakoto DoiEisaku Okada
    • B32B7/02C25D5/10B32B15/04B32B27/06
    • C25D5/10C23C28/00C23C30/00C25D5/48C25D9/08Y10T428/24967Y10T428/264Y10T428/265Y10T428/273
    • The present invention relates to a composite chemical conversion coating film containing a crystalline continuous coating film that is formed on a metal substrate. The present invention also relates to a process for forming a multiple layered coating film including (A) the first step of immersing an untreated metal substrate in an aqueous solution containing nitrate of a rare earth metal and forming a crystalline continuous coating film containing a rare earth metal compound with a deposition amount of 1 mg/m2 at lower limit and 110 mg/m2 at upper limit by cathode electrolysis and (B) the second step of coating an electrodeposition coating composition containing an organic acid or inorganic acid salt of a rare earth metal by cathode electrodeposition. According to the present invention, provided is a multiple layered coating film that forms extremely less amount of a composite chemical conversion coating film and an electrodeposition coating film in order in comparison with a pretreatment step and a cationic electrodeposition coating step by a conventional chemical coating solution and an electrodeposition coating composition; that is, a novel composite chemical conversion coating film with high economic efficiency and environmental conservation property is provided by expressing superior adhesion to a coating film and corrosion resistance equal to or more than a conventional step.
    • 本发明涉及一种复合化学转化膜,其含有在金属基材上形成的结晶连续涂膜。 本发明还涉及一种形成多层涂膜的方法,其包括(A)将未处理的金属基材浸渍在含有稀土金属的硝酸盐的水溶液中并形成含有稀土的结晶连续涂膜的第一步骤 金属化合物,其下限为1mg / m 2,阴极电解为上限为110mg / m 2,(B)涂布含有稀土类有机酸或无机酸盐的电沉积涂料组合物的第二工序 金属通过阴极电沉积。 根据本发明,提供了与通过常规化学涂布溶液的预处理步骤和阳离子电沉积涂布步骤相比,与复合化学转化涂膜和电沉积涂膜相比,形成极少量复合化学转化涂膜和电沉积涂膜的多层涂膜 和电沉积涂料组合物; 即通过表现出对涂膜的优异粘附性和等于或大于常规步骤的耐腐蚀性,提供了具有高经济效率和环保性能的新型复合化学转化膜。