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71. 发明授权

US08237415B2 Control circuit and method for capacitor charging circuit 有权
标题翻译：电容充电电路的控制电路及方法
公开(公告)号：US08237415B2
公开(公告)日：2012-08-07
申请号：US12255742
申请日：2008-10-22
申请人： Tatsuya Iwasaki , Isao Yamamoto
发明人： Tatsuya Iwasaki , Isao Yamamoto
IPC分类号： H02J7/00 , H02M7/5383 , H05B41/16
CPC分类号： H02M3/33523 , G01R19/0084
摘要： An output voltage monitoring circuit monitors an output voltage of a capacitor charging circuit. A first sample-and-hold circuit samples and holds a voltage of a connection point of a primary coil of a transformer and a switching transistor. A first monitoring comparator compares output of the first sample-and-hold circuit with a predetermined first reference voltage. When the output of the first sample-and-hold circuit exceeds the first reference voltage, a signal processor executes predetermined signal processing. The first sample-and-hold circuit starts a sampling period after a predetermined first time has elapsed after the switching transistor is turned OFF. When a voltage drop across a detection resistor reaches a third reference voltage, the first sample-and-hold circuit ends the sampling period.
摘要翻译：输出电压监视电路监视电容器充电电路的输出电压。第一采样保持电路对变压器的初级线圈和开关晶体管的连接点的电压进行采样并保持。第一监视比较器将第一采样保持电路的输出与预定的第一参考电压进行比较。当第一采样保持电路的输出超过第一参考电压时，信号处理器执行预定的信号处理。第一采样保持电路在开关晶体管截止之后经过预定的第一时间之后开始采样周期。当检测电阻上的电压降达到第三参考电压时，第一个采样和保持电路结束采样周期。

72. 发明授权

US08212248B2 Amorphous oxide and field effect transistor 有权
标题翻译：无定形氧化物和场效应晶体管
公开(公告)号：US08212248B2
公开(公告)日：2012-07-03
申请号：US12742977
申请日：2008-12-25
申请人： Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
发明人： Naho Itagaki , Amita Goyal , Tatsuya Iwasaki
IPC分类号： H01L29/10
CPC分类号： H01L29/7869
摘要： An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.
摘要翻译：无定形氧化物至少包括：选自In，Zn和Sn中的至少一种元素; 和Mo。无定形氧化物中Mo与全部金属原子数的原子组成比为0.1原子％以上且5原子％以下。

73. 发明申请

US20120064654A1 METHOD FOR PRODUCING LIGHT-EMITTING FILM AND LIGHT-EMITTING DEVICE 失效
标题翻译：用于生产发光膜和发光装置的方法
公开(公告)号：US20120064654A1
公开(公告)日：2012-03-15
申请号：US13297027
申请日：2011-11-15
申请人： Tomoyuki Oike , Tatsuya Iwasaki , Yoshihiro Ohashi
发明人： Tomoyuki Oike , Tatsuya Iwasaki , Yoshihiro Ohashi
IPC分类号： H01L33/28 , H01L33/42
CPC分类号： C09K11/565 , H01L33/18 , H01L33/28 , H05B33/14
摘要： Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.
摘要翻译：提供一种具有可控电阻率的发光膜和可以使用这种发光膜在低电压下驱动的高亮度发光装置。发光膜包含Cu作为添加元素，作为基材的硫化锌化合物，其中硫化锌化合物包括柱状ZnS晶体，ZnS晶体与ZnS晶体接触的晶界上由硫化铜形成的部位彼此。

74. 发明授权

US08084307B2 Method for manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08084307B2
公开(公告)日：2011-12-27
申请号：US12447199
申请日：2007-11-09
申请人： Naho Itagaki , Tatsuya Iwasaki , Toru Den
发明人： Naho Itagaki , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/7869
摘要： A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.
摘要翻译：一种制造薄膜晶体管的方法，该薄膜晶体管含有具有氧化铟的沟道层11，包括形成氧化铟膜作为沟道层，并使所形成的氧化铟膜在氧化气氛中进行退火。

75. 发明申请

US20110256684A1 FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用氧化硅膜的场效应晶体管及其制造方法
公开(公告)号：US20110256684A1
公开(公告)日：2011-10-20
申请号：US13169221
申请日：2011-06-27
申请人： Tatsuya Iwasaki , Hideya Kumomi
发明人： Tatsuya Iwasaki , Hideya Kumomi
IPC分类号： H01L21/336 , H01L21/265
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618 , H01L29/78621
摘要： The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
摘要翻译：本发明提供一种场效应晶体管，其包括作为半导体层的氧化膜，其中氧化膜包括加入氢和氘之一的源极部分和漏极部分之一。

76. 发明申请

US20110175081A1 THIN FILM TRANSISTOR AND DISPLAY 有权
标题翻译：薄膜晶体管和显示器
公开(公告)号：US20110175081A1
公开(公告)日：2011-07-21
申请号：US12809096
申请日：2009-01-30
申请人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
发明人： Amita Goyal , Naho Itagaki , Tatsuya Iwasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极，栅极绝缘层，沟道层，源电极和漏电极，其中：沟道层包含铟，锗和氧; 并且沟道层具有由In /（In + Ge）表示的组成比为0.5以上且0.97以下。

77. 发明授权

US07964871B2 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer 有权
标题翻译：具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
公开(公告)号：US07964871B2
公开(公告)日：2011-06-21
申请号：US12263157
申请日：2008-10-31
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L29/04
CPC分类号： H01L29/7869
摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
摘要翻译：一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层的沟道层，折射率为nt，其中nx> nt的关系。一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

78. 发明申请

US20110008584A1 FLUORESCENT MATERIAL, FLUORESCENT SUBSTANCE, DISPLAY, AND PROCESS FOR PREPARING FLUORESCENT SUBSTANCE 审中-公开
标题翻译：荧光物质，荧光物质，显示和制备荧光物质的方法
公开(公告)号：US20110008584A1
公开(公告)日：2011-01-13
申请号：US12886658
申请日：2010-09-21
申请人： TOMOYUKI OIKE , Yoshihiro Ohashi , Tatsuya Iwasaki
发明人： TOMOYUKI OIKE , Yoshihiro Ohashi , Tatsuya Iwasaki
IPC分类号： B32B9/04 , B32B1/00
CPC分类号： C09K11/7734 , H01J29/20 , H01J29/24 , H01J31/127 , Y10T428/24628
摘要： The present invention aims at providing a novel oxide fluorescent material. The novel oxide fluorescent material is a fluorescent material including: as constituent elements, at least one or more elements selected from the group consisting of Mg, Ca, Sr and Ba; at least one or more elements selected from the group consisting of Si and Ge; at least one or more elements selected from the group consisting of rare earth elements; and oxygen, wherein the crystal structure is a pseudowollastonite crystal structure. The fluorescent substance includes a layer 54 comprised of the fluorescent material and a layer 52 including at least one or more elements selected from the group consisting of Si and Ge, the layers stacked on a substrate 51. The fluorescent substance includes an adjacent layer that includes at least one or more elements selected from the group consisting of Si and Ge and is in contact with the portion constituted by the fluorescent material.
摘要翻译：本发明的目的在于提供一种新的氧化物荧光材料。新型氧化物荧光体是荧光体，作为构成要素，选自Mg，Ca，Sr和Ba中的至少一种以上的元素; 选自Si和Ge中的至少一种或多种元素; 选自由稀土元素组成的组中的至少一种以上的元素; 和氧，其中所述晶体结构是假硅灰石晶体结构。荧光物质包括由荧光材料构成的层54和包括选自Si和Ge中的至少一种或多种元素的层52，层叠在基板51上。荧光物质包括相邻层，其包括选自Si和Ge中的至少一种或多种元素，并且与由荧光材料构成的部分接触。

79. 发明授权

US07791082B2 Semiconductor apparatus and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07791082B2
公开(公告)日：2010-09-07
申请号：US11859641
申请日：2007-09-21
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L27/15
CPC分类号： H01L29/7869 , H01L27/3211 , H01L27/3244
摘要： It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.
摘要翻译：本发明的目的是提供一种控制薄膜晶体管的阈值电压的技术，其中非晶氧化物膜被施加到沟道层。提供了包括多种晶体管的半导体装置，所述多种晶体管中的每一种包括由包含多种金属元素的非晶氧化物制成的沟道层; 并且通过改变非晶氧化物的元素比，多种晶体管的阈值电压彼此不同。

80. 发明授权

US07705533B2 Tapered light emitting structure and light emitting device having a columnar light extraction layer 失效
标题翻译：锥形发光结构和具有柱状光提取层的发光器件
公开(公告)号：US07705533B2
公开(公告)日：2010-04-27
申请号：US11564385
申请日：2006-11-29
申请人： Yoshihiro Ohashi , Tomoyuki Oike , Tatsuya Iwasaki
发明人： Yoshihiro Ohashi , Tomoyuki Oike , Tatsuya Iwasaki
IPC分类号： H01J1/62 , H01J63/04 , G02F1/1335 , F21V7/04
CPC分类号： H01J29/89 , G02B1/02
摘要： Provided is a light emitting material in which: a light emitting layer comprising a columnar part of which a cross-sectional shape is column such as cylindrical column, and a light emitting part of which a cross-sectional shape is cone or pyramid; and light generated in the light emitting part is extracted outside through the columnar part. The light emitting material allows light to be efficiently extracted to the outside to improve luminance.
摘要翻译：本发明提供一种发光材料，其中：发光层包括柱状部分，其截面形状为柱状柱状柱，发光部分的截面形状为锥形或金字塔形; 并且在发光部分中产生的光通过柱状部分被提取到外部。发光材料允许光被有效地提取到外部以提高亮度。

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