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71. 发明授权

US07508001B2 Semiconductor laser device and manufacturing method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07508001B2
公开(公告)日：2009-03-24
申请号：US11154807
申请日：2005-06-17
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0422 , H01S5/0655 , H01S5/2009 , H01S5/2206 , H01S5/2218 , H01S5/2232 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.
摘要翻译：本发明旨在提供一种具有低阈值电流的长寿命半导体激光器件，并且可用于使用氮化物半导体层的蓝紫色半导体激光器件中的高输出操作。在半导体激光器件中，在GaN衬底1上依次形成以下层：n型GaN层2; n型AlGaN包覆层3，第一n型GaN引导层4，和p型AlGaN阻挡层6（电流阻挡层），另外在p型AlGaN阻挡层6的一部分上形成条状开口，形成第二n型GaN引导层5以覆盖开口并且在第二n型GaN引导层5上依次形成以下层：InGaN多量子阱有源层7; 未掺杂的GaN引导层8; p型AlGaN电子溢出抑制层9，p型AlGaN包覆层10和p型GaN接触层11。

72. 发明授权

US07482641B2 White light emitting element and white light source 有权
标题翻译：白光发光元件和白光源
公开(公告)号：US07482641B2
公开(公告)日：2009-01-27
申请号：US11060278
申请日：2005-02-18
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A white light source has an excitation light source and a white light emitting element provided at a position which allows the transmission of light from the excitation light source to generate white light through irradiation with the light from the excitation light source. The white light emitting element has a sapphire substrate made of sapphire or the like which transmits visible light, an InGaAlN semiconductor layer formed on a surface of the sapphire substrate to emit red light through irradiation with visible light, and a fluorescent layer formed on the surface opposite to the surface provided with the semiconductor layer to emit yellow light or green light through irradiation with visible light.
摘要翻译：白光源具有激发光源和设置在允许来自激发光源的光的透射通过照射来自激发光源的光而产生白光的位置的白色发光元件。白色发光元件具有由透过可见光的蓝宝石等制成的蓝宝石衬底，形成在蓝宝石衬底的表面上的InGaAlN半导体层通过可见光照射发出红光，并且在表面上形成荧光层与设置有半导体层的表面相对，以通过可见光照射发射黄光或绿光。

73. 发明授权

US07459719B2 Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer 失效
标题翻译：超晶格光半导体器件，其中每个阻挡层在中心部分具有高含量的III族元素，在阱层附近具有低含量
公开(公告)号：US07459719B2
公开(公告)日：2008-12-02
申请号：US11304816
申请日：2005-12-16
申请人： Jun Shimizu , Tetsuzo Ueda , Toshikazu Onishi
发明人： Jun Shimizu , Tetsuzo Ueda , Toshikazu Onishi
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/3406 , H01S5/3407 , H01S5/34313 , H01S5/34373 , H01S2301/176
摘要： An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is constant, each well layer is uniformly provided with compression strain and each barrier layer is provided with large extension strain in a center portion thereof along the thickness direction and small extension strain in portions thereof in the vicinity of the well layers.
摘要翻译：光学半导体器件包括具有量子阱结构的有源层，其包括具有比阱层更大的带隙的交替堆叠的阱层和势垒层。每个阱层和阻挡层的带隙是恒定的，每个阱层均匀地具有压缩应变，并且每个阻挡层在其中心部分沿着厚度方向具有大的延伸应变，并且部分地具有小的延伸应变在阱层附近。

74. 发明申请

US20080179606A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20080179606A1
公开(公告)日：2008-07-31
申请号：US11971467
申请日：2008-01-09
申请人： Manabu USUDA , Tetsuzo Ueda , Kenji Orita
发明人： Manabu USUDA , Tetsuzo Ueda , Kenji Orita
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01L33/10 , H01L33/105 , H01L33/20 , H01L33/382 , H01L2933/0083
摘要： A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.
摘要翻译：氮化物半导体发光器件包括由硅形成的衬底，形成在衬底上的绝缘膜和形成在绝缘膜上的单晶薄膜。在单晶膜上形成包括氮化物半导体发光层的半导体层叠体。

75. 发明申请

US20080087915A1 Nitride semiconductor device and method for fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20080087915A1
公开(公告)日：2008-04-17
申请号：US11878352
申请日：2007-07-24
申请人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Yasuhiro Uemoto , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L21/336 , H01L29/772 , H01L31/00
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7783
摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.
摘要翻译：氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域形成有具有比控制区域更高的电阻的高电阻区域。

76. 发明申请

US20070131968A1 Field effect transistor 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20070131968A1
公开(公告)日：2007-06-14
申请号：US11603224
申请日：2006-11-22
申请人： Tatsuo Morita , Tetsuzo Ueda
发明人： Tatsuo Morita , Tetsuzo Ueda
IPC分类号： H01L31/00
CPC分类号： H01L21/28581 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/475 , H01L29/7786
摘要： A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance.
摘要翻译：栅电极的材料是具有比常规使用的Pd等功函数高的导电氧化物，从而在不降低异质结的片载体浓度的情况下实现常关晶体管。因此，可以在减小特定导通电阻的增加的同时实现常关断操作。

77. 发明授权

US07217960B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07217960B2
公开(公告)日：2007-05-15
申请号：US11325340
申请日：2006-01-05
申请人： Hiroaki Ueno , Tetsuzo Ueda , Yasuhiro Uemoto , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara , Yutaka Hirose , Masahiro Hikita
发明人： Hiroaki Ueno , Tetsuzo Ueda , Yasuhiro Uemoto , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara , Yutaka Hirose , Masahiro Hikita
IPC分类号： H01L33/00
CPC分类号： H01L29/7786 , H01L29/2003
摘要： It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.
摘要翻译：本发明的一个目的是提供一种半导体器件，其可以同时实现HFET的常闭模式和改进的最大值，并进一步实现gm的改善和栅极漏电流的减小。为了在栅电极正下方的基板11的操作层12上保持薄势垒层13，主要用于实现常关模式并且还实现高I max，配置成使得栅极和源极区域之间以及栅极和漏极区域之间的半导体层17可以增加阻挡层13的厚度。因此与阻挡层的厚度被设计为均匀的FET相比，可以实现常关模式和I 的改善。介电常数高于阻挡层的绝缘膜18进一步插入在栅电极16和阻挡层13之间，从而改善gm和栅极漏电流的减小可以实现。

78. 发明申请

US20060255350A1 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US20060255350A1
公开(公告)日：2006-11-16
申请号：US11491261
申请日：2006-07-24
申请人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
发明人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/32 , H01L29/66462 , H01L29/802 , H01L33/007
摘要： A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.

79. 发明申请

US20060245459A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20060245459A1
公开(公告)日：2006-11-02
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

80. 发明申请

US20060157804A1 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060157804A1
公开(公告)日：2006-07-20
申请号：US11287482
申请日：2005-11-28
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L29/76
CPC分类号： H01L29/8122 , H01L29/2003 , H01L29/66856
摘要： A first SiO2 thin film, a tungsten gate electrode, and a second SiO2 thin film are selectively formed on a first n+-type GaN contact semiconductor layer in that order and in a multilayer film structure having the three layers, a stripe-shaped opening is formed. Via the opening, an undoped GaN channel semiconductor layer and the second n+-type GaN contact semiconductor layer are formed so that both the layers are regrown by, for example, metal organic chemical vapor deposition. A source electrode and a drain electrode are formed so as to contact the corresponding second and first n+-type GaN contact semiconductor layers. The regrown undoped GaN channel semiconductor layer and the regrown second n+-type GaN contact semiconductor layer are horizontally grown portions and hence, the contact area of the electrode can be made larger than the area of the opening.
摘要翻译：第一个SiO 2薄膜，钨栅电极和第二SiO 2薄膜选择性地形成在第一n + + / GaN接触半导体层，并且在具有三层的多层膜结构中形成条形开口。通过开口，形成未掺杂的GaN沟道半导体层和第二n + + + GaN接触半导体层，使得这两个层通过例如金属有机化学气相沉积而再生长。源电极和漏电极形成为与相应的第二和第n + +型GaN接触半导体层接触。再生未掺杂的GaN沟道半导体层和再生长的第二n + + + GaN接触半导体层是水平生长的部分，因此可以使电极的接触面积大于开口的面积。

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