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    • 72. 发明授权
    • Single phase/three phase heater element circuit for a ceramic fiber
heater
    • 用于陶瓷纤维加热器的单相/三相加热元件电路
    • US5597502A
    • 1997-01-28
    • US353708
    • 1994-12-12
    • Toru WatanabeShigetoshi Nagano
    • Toru WatanabeShigetoshi Nagano
    • H05B3/00H05B3/14H05B3/20H05B3/46H05B3/02A21B1/22H05B3/34
    • H05B3/0019H05B3/141H05B3/20
    • A single phase and three phase heater element circuit for a ceramic fiber heater wherein a plurality of blocks each of which is formed by a plurality of heater elements arranged side by side on a base of insulation material and connected to one another to form a series circuit, said series circuit being connected across an electric power source, and adjacent ends of the series circuits in adjacent blocks being connected to the same terminal of said electric power source. By connecting adjacent ends of adjacent blocks of ceramic fiber heater element circuits together, the ends of the series circuit connected to separate terminals of the power source are spaced sufficiently far apart from each other such that current flow through the insulation material between ends adjacent the blocks is minimized and preferably substantially prevented for preventing short circuiting and failure of the heater.
    • 一种用于陶瓷纤维加热器的单相和三相加热器元件电路,其中多个块由多个加热元件形成,所述多个加热元件并排布置在绝缘材料的基底上并彼此连接以形成串联电路 所述串联电路跨越电源连接,并且相邻块中的串联电路的相邻端连接到所述电源的相同端子。 通过将陶瓷纤维加热器元件电路的相邻块的相邻端连接在一起,连接到电源的分离端子的串联电路的端部彼此间隔足够远,使得电流流过邻近块的端部之间的绝缘材料 被最小化并且优选地基本上被防止以防止加热器的短路和故障。
    • 73. 发明授权
    • Exposure mask, exposure mask substrate, method for fabricating the same,
and method for forming pattern based on exposure mask
    • 曝光掩模,曝光掩模基板,其制造方法以及基于曝光掩模形成图案的方法
    • US5547787A
    • 1996-08-20
    • US49788
    • 1993-04-21
    • Shinichi ItoHaruo OkanoToru WatanabeKatsuya Okumura
    • Shinichi ItoHaruo OkanoToru WatanabeKatsuya Okumura
    • G03F1/00G03F1/26G03F1/32G03F9/00
    • G03F1/32G03F1/26
    • An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask.The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant.Further, since in a mask including the semi-transparent pattern, at least that area of non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.
    • 通过首先在透光性基板上形成稍大于所需尺寸的遮光膜或半透明膜图案(第一图案)而制成的图案之间具有优异的取向精度的曝光掩模,在其上形成半透明 膜或透光膜图案(第二图案),以便包括由遮光部分,半透明部分和透光部分组成的所需尺寸的所有图案,然后去除第一图案的突出部分 使用第二种图案作为掩模。 半透明膜由至少两层形成,每层均含有共同的元素,因此可以使用相同的装置制造半透明膜,并且当图案化时,可以使用它们进行蚀刻工艺 蚀刻剂 此外,由于在包括半透明图案的掩模中,至少通过转印光到达晶片的非图案区域的区域起着屏蔽曝光光的作用,可以防止太窄的图案或不足的焦深。
    • 74. 发明授权
    • Surface acoustic wave filter with attenuated spurious emissions
    • 具有衰减杂散发射的表面声波滤波器
    • US5528206A
    • 1996-06-18
    • US346260
    • 1994-11-23
    • Toru Watanabe
    • Toru Watanabe
    • H03H9/64
    • H03H9/64
    • A surface acoustic wave filter includes a piezoelectric substrate. On the surface of the piezoelectric substrate, an input transducer and an output transducer are formed at a predetermined interval. The input transducer and the output transducer are respectively formed with a pair of IDT (interdigital electrode transducers) disposed oppositely. A pair of IDT which construct at least one transducer of the input transducer and the output transducer are formed on the piezoelectric substrate in the following manner. That is, a first impulse train is determined by inverse Fourier transformation of desired transmission characteristics (where, center frequency is f.sub.0 and surface wavelength is .sub.0), a second impulse train is determined by double over-sampling of the first impulse train along its envelope at a half period, wherein the number of unit impulses of the first impulse train is doubled, a third impulse train is determined by dividing the second impulse train into four impulse trains each, among which second and third impulses are made zero, and the IDT are formed on the piezoelectric substrate corresponding to the third impulse train.
    • 声表面波滤波器包括压电基片。 在压电基板的表面上,以预定间隔形成输入传感器和输出换能器。 输入传感器和输出传感器分别与相对设置的一对IDT(叉指式电极换能器)形成。 以下述方式在压电基板上形成构成输入变换器和输出变换器的至少一个换能器的一对IDT。 也就是说,通过期望的传输特性(其中,中心频率为f0,表面波长为0)的傅里叶逆变换确定第一脉冲串,第二脉冲串通过沿其信封的第一脉冲串的双重过采样来确定 在半周期中,第一脉冲串的单位脉冲数被加倍,通过将第二脉冲串分成四个脉冲串来确定第三脉冲串,其中第二和第三脉冲为零,并且IDT 形成在与第三脉冲串相对应的压电基板上。
    • 79. 发明授权
    • Apparatus for carrying out dry etching
    • 用于进行干蚀刻的设备
    • US4659449A
    • 1987-04-21
    • US804043
    • 1985-12-03
    • Toru Watanabe
    • Toru Watanabe
    • H01L21/302H01J37/305H01J37/32H01L21/3213C23F1/02
    • H01J37/32431H01J37/3056H01L21/32137
    • A dry etching apparatus according to the present invention is characterized in that an etching process is applied to a sample by using both physical etching means and chemical etching means. To perform such an etching process, the dry etching apparatus is provided with a chamber for accommodating a sample to be etched, a suction unit for reducing a pressure within the chamber, a gas introducing unit for introducing a reactive gas from the external into said chamber, an excitation unit to excite the reactive gas for producing activated species allowing the sample to be etched due to chemical reaction, and an ion irradiation unit for irradiating ions to the sample, thereby making it possible to independently control the energy or density of ions and the density of the activated species, thus setting optimum etching conditions in conformity with a material to be etched or an etching pattern.
    • 根据本发明的干蚀刻装置的特征在于,通过使用物理蚀刻装置和化学蚀刻装置两者对样品进行蚀刻处理。 为了进行这样的蚀刻处理,干式蚀刻装置设置有用于容纳要蚀刻的样品的室,用于减小室内的压力的抽吸单元,用于将反应性气体从外部引入到所述室中的气体引入单元 激发单元,用于激发用于产生活化物质的反应气体,使得由于化学反应而使样品被蚀刻;以及离子照射单元,用于向样品照射离子,从而可以独立地控制离子的能量或密度, 活化物质的密度,从而根据要蚀刻的材料或蚀刻图案设定最佳蚀刻条件。