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71. 发明申请

US20070076348A1 Interposer and electronic device fabrication method 有权
标题翻译：内插器和电子器件制造方法
公开(公告)号：US20070076348A1
公开(公告)日：2007-04-05
申请号：US11339661
申请日：2006-01-26
申请人： Takeshi Shioga , Yoshikatsu Ishizuki , John Baniecki , Kazuaki Kurihara
发明人： Takeshi Shioga , Yoshikatsu Ishizuki , John Baniecki , Kazuaki Kurihara
IPC分类号： H01G4/236
CPC分类号： H01G4/30 , H01G4/232 , H01L21/6835 , H01L2221/68345 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2224/16265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H05K1/112 , H05K1/141 , H05K1/162 , H05K3/007 , H05K3/4602 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/10378 , H05K2201/10674 , H05K2203/016 , H05K2203/0191 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49153 , Y10T29/49155 , Y10T29/49165 , H01L2224/05599
摘要： An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
摘要翻译：插入件2包括由多个树脂层26,34,42,52,56形成的基座10; 埋在基座10中的薄膜电容器12，包括下电极20，电容器电介质膜22和上电极24; 通过基底10形成并与薄膜电容器12的上部电极24电连接的第一贯通电极14b; 以及通过基底10形成并电连接到薄膜电容器12的下电极20的第二贯通电极14a，还包括：埋入基座10中并电连接到薄膜电容器12的各个上电极24的互连件48 多个薄膜电容器12，多个第一贯通电极14b经由互连件48与所述多个薄膜电容器12的上部电极24电连接，所述多个第一贯通电极 - 电极14b通过互连48电互连。

72. 发明申请

US20060180938A1 Semiconductor device, method of manufacturing the same, capacitor structure, and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法，电容器结构及其制造方法
公开(公告)号：US20060180938A1
公开(公告)日：2006-08-17
申请号：US11258420
申请日：2005-10-26
申请人： Kazuaki Kurihara , Takeshi Shioga , John Baniecki
发明人： Kazuaki Kurihara , Takeshi Shioga , John Baniecki
IPC分类号： H01L23/48
CPC分类号： H01L23/66 , H01L21/4853 , H01L21/4857 , H01L21/6835 , H01L21/76831 , H01L23/147 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/50 , H01L24/16 , H01L24/81 , H01L2221/68345 , H01L2221/68359 , H01L2221/68368 , H01L2224/05091 , H01L2224/05096 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13018 , H01L2224/13022 , H01L2224/13099 , H01L2224/14051 , H01L2224/16225 , H01L2224/16235 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01061 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19106 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.
摘要翻译：公开了一种包括插入器和半导体芯片的半导体器件。插入器包括Si衬底; 通过穿过Si衬底的相应通孔中的绝缘材料提供的多个通孔; 设置在所述Si衬底的第一主表面上以便与所述通孔电连接的薄膜电容器; 以及设置在Si衬底的第二主表面上的多个外部连接端子，以便电连接到通孔。第二主表面远离第一主表面。半导体芯片设置在第一主表面和第二主表面中的一个上，以便与通孔电连接。 Si衬底的厚度小于通孔的直径。

73. 发明申请

US20050142733A1 Thin film capacitor and its manufacture method 失效
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US20050142733A1
公开(公告)日：2005-06-30
申请号：US11066540
申请日：2005-02-28
申请人： Kazuaki Kurihara , Takeshi Shioga , John Baniecki
发明人： Kazuaki Kurihara , Takeshi Shioga , John Baniecki
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L27/04 , H01L27/06 , H01L27/08 , H01L21/8242
CPC分类号： H01G4/33 , H01L27/0629 , H01L27/0805 , H01L28/40
摘要： A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal intermediate layer, a single crystal high dielectric constant dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed above the single crystal high dielectric constant dielectric layer, and a plurality of conductor terminals connected to the lower electrode layer and upper electrode layer at a plurality of positions.
摘要翻译：提供了一种薄膜电容器，其包括单晶高介电常数介电层。薄膜电容器具有单晶硅衬底，在单晶硅衬底上外延生长的单晶中间层，在单晶中间层外延生长的单晶下电极，外延生长在单晶硅介电层上的单晶高介电常数电介质层下电极层，形成在单晶高介电常数介质层上的上电极层，以及在多个位置连接到下电极层和上电极层的多个导体端子。

74. 发明申请

US20050098816A1 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same 有权
标题翻译：电容器及其制造方法，半导体器件及其制造方法
公开(公告)号：US20050098816A1
公开(公告)日：2005-05-12
申请号：US10849791
申请日：2004-05-21
申请人： John Baniecki , Takeshi Shioga , Kazuaki Kurihara
发明人： John Baniecki , Takeshi Shioga , Kazuaki Kurihara
IPC分类号： H01G4/008 , H01G4/228 , H01G4/33 , H01L21/02 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L23/52 , H01L27/04 , H01L27/08 , H01L27/108 , H01L21/8234 , H01L21/8244 , H01L29/76 , H01L29/94 , H01L31/119 , H01L21/20
CPC分类号： H01G4/33 , H01G4/008 , H01G4/228 , H01L21/28568 , H01L27/0805 , H01L27/10852 , H01L28/55 , H01L28/65 , H01L28/75 , H01L2224/11
摘要： The capacitor according to the present invention comprises a lower electrode 18 formed on a base substrate 14, a dielectric film 20 formed on the lower electrode 18, and an upper electrode 28 formed on the dielectric film 20 and including a polycrystalline conduction film 22, and a amorphous conduction film 24 formed on the polycrystalline conduction film 22. Because of the amorphous conduction film 24 included in the upper electrode 28, which can shut off hydrogen and water, hydrogen and water can be prohibited from arriving at the dielectric film 20. Accordingly, the dielectric film 20 of an oxide is prevented from being reduced with hydrogen, and the capacitor can have good electric characteristics.
摘要翻译：根据本发明的电容器包括形成在基底基板14上的下电极18，形成在下电极18上的电介质膜20和形成在电介质膜20上并包括多晶导体膜22的上电极28，以及形成在多晶导体膜22上的非晶导体膜24.由于包含在上电极28中的可以截断氢和水的非晶导体膜24，可以禁止氢和水到达电介质膜20。，防止氧化物的电介质膜20被氢还原，电容器可以具有良好的电特性。

75. 发明申请

US20050056878A1 Thin film capacitor and method of manufacturing the same 有权
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US20050056878A1
公开(公告)日：2005-03-17
申请号：US10974747
申请日：2004-10-28
申请人： Takeshi Shioga , John Baniecki , Kazuaki Kurihara
发明人： Takeshi Shioga , John Baniecki , Kazuaki Kurihara
IPC分类号： H01G4/33 , H01L21/02 , H01L21/768 , H01L23/50 , H01L27/01 , H01L27/108 , H01L27/13
CPC分类号： H01L27/016 , H01L21/76804 , H01L21/76895 , H01L23/50 , H01L27/13 , H01L28/40 , H01L28/55 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.
摘要翻译：一种薄膜电容器，包括绝缘衬底，位于衬底上的电容器结构，具有夹在下电极层和上电极层之间的电介质层的电容器结构以及分别连接到下电极层和上电极的导体构件其特征在于，至少所述电介质层的侧面具有足够的倾斜度，以防止通过所述导体部件的所述下部电极层的上部电极层的短路。还公开了制造这种薄膜电容器的方法。

76. 发明授权

US08479386B2 Method for manufacturing interposer 有权
标题翻译：内插制造方法
公开(公告)号：US08479386B2
公开(公告)日：2013-07-09
申请号：US12944904
申请日：2010-11-12
申请人： Takeshi Shioga , Kazuaki Kurihara , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi
发明人： Takeshi Shioga , Kazuaki Kurihara , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi
IPC分类号： H05K3/02
CPC分类号： H05K1/162 , H01L21/486 , H01L23/15 , H01L23/498 , H01L23/49827 , H01L23/50 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01019 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/0306 , H05K1/112 , H05K3/4605 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/09627 , H05K2201/10378 , Y10T29/49002 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method for manufacturing an interposer including forming a capacitor over a semiconductor substrate; forming a first resin layer with a first partial electrode buried in over the semiconductor substrate and the capacitor; cutting an upper part of the first partial electrode and the first resin layer with a cutting tool; forming a second resin layer with a second partial electrode buried in over a glass substrate with a through-electrode buried in; cutting an upper part of the second partial electrode and the second resin layer with the cutting tool; making thermal processing with the first resin layer and the second resin layer adhered to each other while connecting the first partial electrode and the second partial electrode to each other; removing the semiconductor substrate; forming a third resin layer over the glass substrate, covering the capacitor; and burying a third partial electrode in the third resin layer.
摘要翻译：一种用于制造包括在半导体衬底上形成电容器的插入器的方法; 形成第一树脂层，其中第一部分电极埋在半导体衬底和电容器之上; 用切割工具切割第一部分电极和第一树脂层的上部; 形成具有埋在玻璃基板上的第二部分电极的第二树脂层，其中埋入有通孔; 用切割工具切割第二部分电极和第二树脂层的上部; 在使第一部分电极和第二部分电极彼此连接的同时，使第一树脂层和第二树脂层彼此粘合; 去除半导体衬底; 在玻璃基板上形成第三树脂层，覆盖电容器; 并在第三树脂层中埋设第三部分电极。

77. 发明授权

US08330480B2 Interconnection card for inspection, manufacture method for interconnection card, and inspection method using interconnection card 有权
标题翻译：互连卡互连卡，互连卡的制造方法和使用互连卡的检验方法
公开(公告)号：US08330480B2
公开(公告)日：2012-12-11
申请号：US12824896
申请日：2010-06-28
申请人： Takeshi Shioga , Kazuaki Kurihara
发明人： Takeshi Shioga , Kazuaki Kurihara
IPC分类号： G01R31/00
CPC分类号： G01R3/00 , G01R1/07378 , Y10T29/49155
摘要： Recesses are formed on one surface of a substrate. A conductive film covers an inner surface of each of the recesses. This conductive film contacts a bump of a semiconductor device to be inspected and is electrically connected to the bump. It is therefore possible to prevent damages of the bump to be caused by contact of a probe pin.
摘要翻译：在基板的一个表面上形成凹部。导电膜覆盖每个凹部的内表面。该导电膜接触待检查的半导体器件的凸块并与凸点电连接。因此，可以防止由于探针的接触引起的凸块的损坏。

78. 发明授权

US07846852B2 Method for manufacturing capacitor embedded in interposer 有权
标题翻译：嵌入式插入式电容器的制造方法
公开(公告)号：US07846852B2
公开(公告)日：2010-12-07
申请号：US12782867
申请日：2010-05-19
申请人： Takeshi Shioga , Masataka Mizukoshi , Kazuaki Kurihara
发明人： Takeshi Shioga , Masataka Mizukoshi , Kazuaki Kurihara
IPC分类号： H01L21/8238
CPC分类号： H05K1/162 , H01G9/025 , H01L23/49822 , H01L23/642 , H01L24/48 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73257 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19107 , H01L2924/30107 , H05K3/4069 , H05K3/4644 , H05K2201/09509 , H05K2201/09763 , H05K2203/0315 , Y10S438/957 , H01L2924/00 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： As for electrode pads for a semiconductor integrated circuit element, some of electrode pads for signal transmission are coupled to Ti films. Others of the electrode pads for signal transmission are coupled to electrode pads through wiring routed in multilayer wiring. Electrode pads for power supply are coupled to electrode pads to which power lines at potentials different from each other are coupled through wiring. The electrode pads are also coupled to Al foils (anodes). Electrode pads for grounding are coupled to electrode pads to which ground lines are coupled through wiring. The electrode pads are also coupled to conductive polymer films (cathodes).
摘要翻译：对于用于半导体集成电路元件的电极焊盘，用于信号传输的一些电极焊盘耦合到Ti膜。用于信号传输的其他电极焊盘通过布线在多层布线中的布线耦合到电极焊盘。用于电源的电极焊盘耦合到电极焊盘，电极彼此不同的电力线通过布线耦合到电极焊盘。电极焊盘也耦合到铝箔（阳极）。用于接地的电极焊盘耦合到接地线通过布线耦合到的电极焊盘。电极焊盘也耦合到导电聚合物膜（阴极）。

79. 发明授权

US07795739B2 Semiconductor device, method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07795739B2
公开(公告)日：2010-09-14
申请号：US11984361
申请日：2007-11-16
申请人： Kazuaki Kurihara , Takeshi Shioga , John D. Baniecki
发明人： Kazuaki Kurihara , Takeshi Shioga , John D. Baniecki
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L23/66 , H01L21/4853 , H01L21/4857 , H01L21/6835 , H01L21/76831 , H01L23/147 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/50 , H01L24/16 , H01L24/81 , H01L2221/68345 , H01L2221/68359 , H01L2221/68368 , H01L2224/05091 , H01L2224/05096 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13018 , H01L2224/13022 , H01L2224/13099 , H01L2224/14051 , H01L2224/16225 , H01L2224/16235 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01061 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19106 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.
摘要翻译：公开了一种包括插入器和半导体芯片的半导体器件。插入器包括Si衬底; 通过穿过Si衬底的相应通孔中的绝缘材料提供的多个通孔; 设置在所述Si衬底的第一主表面上以便与所述通孔电连接的薄膜电容器; 以及设置在Si衬底的第二主表面上的多个外部连接端子，以便电连接到通孔。第二主表面远离第一主表面。半导体芯片设置在第一主表面和第二主表面中的一个上，以便与通孔电连接。 Si衬底的厚度小于通孔的直径。

80. 发明授权

US07793396B2 Manufacturing method of capacitor 有权
标题翻译：电容器制造方法
公开(公告)号：US07793396B2
公开(公告)日：2010-09-14
申请号：US11857622
申请日：2007-09-19
申请人： Takeshi Shioga , Kazuaki Kurihara
发明人： Takeshi Shioga , Kazuaki Kurihara
IPC分类号： H01G7/00 , H01G9/00
CPC分类号： H01G4/33 , H01G4/008 , H01G4/236 , H01L28/40 , H05K1/0231 , H05K1/181 , Y10T29/41 , Y10T29/417 , Y10T29/43 , Y10T29/435
摘要： A manufacturing method includes forming a dielectric part by oxidizing an entire first surface of a valve metal sheet; forming a through hole in the valve metal sheet in which the dielectric part is formed; applying an adhesive conductive material to a surface of a substrate; attaching the valve metal sheet in which the through hole is formed, to the substrate so that the first surface contacts the conductive material on the substrate surface; forming a conductive layer by curing the conductive material; forming a protection layer which covers a second surface of the valve metal sheet which is opposite to the first surface of the valve metal sheet; forming openings in the protection layer, so that the conductive layer in the through hole and the second surface of the valve metal sheet are partially exposed from the openings; and filling up the openings in the protection layer with another conductive material to form electrode terminals.
摘要翻译：制造方法包括通过氧化阀金属片的整个第一表面来形成电介质部分; 在其中形成有电介质部分的阀金属片中形成通孔; 将粘合导电材料施加到基底的表面; 将形成有通孔的阀金属片附接到基板，使得第一表面与基板表面上的导电材料接触; 通过固化导电材料形成导电层; 形成覆盖所述阀金属片的与所述阀金属片的第一面相反的第二面的保护层; 在保护层中形成开口，使得通孔中的导电层和阀金属片的第二表面部分地从开口露出; 并用另一导电材料填充保护层中的开口以形成电极端子。

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