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71. 发明授权

US07479658B2 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 有权
标题翻译：外延晶片，外延晶片的制造方法，使用这些外延晶片抑制这些外延晶片的弯曲的方法和半导体多层结构
公开(公告)号：US07479658B2
公开(公告)日：2009-01-20
申请号：US10909477
申请日：2004-08-02
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.
摘要翻译：提供了抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

72. 发明授权

US07465413B2 Phosphor and plasma display panel using the same 失效
标题翻译：荧光体和等离子体显示面板使用相同
公开(公告)号：US07465413B2
公开(公告)日：2008-12-16
申请号：US11121662
申请日：2005-05-04
申请人： Yoshihisa Nagasaki , Seigo Shiraishi , Masahiro Sakai
发明人： Yoshihisa Nagasaki , Seigo Shiraishi , Masahiro Sakai
IPC分类号： C09K11/59 , C09K11/54
CPC分类号： C09K11/7797 , C09K11/676 , C09K11/685 , C09K11/7734 , H01J11/12 , H01J11/42
摘要： A phosphor of the present invention is characterized by: having a phosphor main portion containing zinc silicate as a base material and manganese as an activator; and having at least one element from among titanium (Ti), zirconium (Zr), and hafnium (Hf), or having at least one element from among molybdenum (Mo) and tungsten (W), added to the phosphor main portion. The phosphor with such a composition is capable of precisely controlling the composition of a surface region (i.e. the surface including the vicinity) of each phosphor particle and improving the crystallinity, which leads to a high luminous efficiency and a reduction in time-lapse degradation.
摘要翻译：本发明的荧光体的特征在于：具有含有硅酸锌作为基体的荧光体主体部分，锰作为活化剂; 并且具有钛（Ti），锆（Zr）和铪（Hf）中的至少一种元素，或者在钼（Mo）和钨（W）中）具有至少一种元素。具有这种组成的荧光体能够精确地控制每个荧光体颗粒的表面区域（即包括附近的表面）的组成并提高结晶度，这导致高发光效率和延时降解的减少。

73. 发明申请

US20080205941A1 DEVELOPMENT APPARATUS AND IMAGE FORMING APPARATUS 有权
标题翻译：开发设备和图像形成装置
公开(公告)号：US20080205941A1
公开(公告)日：2008-08-28
申请号：US12036444
申请日：2008-02-25
申请人： Masahiro Sakai
发明人： Masahiro Sakai
IPC分类号： G03G15/09
CPC分类号： G03G15/0921 , G03G15/0942
摘要： A development apparatus that performs development by forming a magnetic brush using a two-component developer is provided with a developer tank that stores developer; a developer hearing member provided with a development sleeve that carries the developer stored in the developer tank on the outer circumferential face and transports the developer to a development area where the electrostatic latent image on the image bearing carrier is developed, the development sleeve being provided with at least a main pole magnet in which a main pole is formed that faces the development area, and an interpole magnet in which an interpole is formed adjacent to the main pole on the downstream side in a developer transport direction; and a carrier recovery means in which a pushing/bending magnetic pole of the same polarity as the interpole is formed such that magnetic force lines of the interpole in the developer bearing member are pushed/bent to the inside of the developer tank.
摘要翻译：通过使用双组分显影剂形成磁刷来进行显影的显影装置设置有存储显影剂的显影剂罐; 显影剂助听构件，其设置有显影套筒，该显影套筒将存储在显影剂罐中的显影剂携带在外周面上，并将显影剂输送到图像承载载体上的静电潜像显影的显影区域，显影套筒设置有至少形成有面向显影区域的主极的主极磁体和在显影剂输送方向上在下游侧与主极相邻地形成极间的极间磁体; 以及载体恢复装置，其中形成与极间极性相同的推/弯磁极，使得显影剂承载构件中的极间的磁力线被推/弯到显影剂罐的内部。

74. 发明申请

US20080096510A1 Mobile Communication Terminal and Reception Diversity Interrupting Method 有权
标题翻译：移动通信终端和接收分集中断方法
公开(公告)号：US20080096510A1
公开(公告)日：2008-04-24
申请号：US11661115
申请日：2006-01-17
申请人： Yousuke Iizuka , Shinsuke Ogawa , Masahiro Sakai
发明人： Yousuke Iizuka , Shinsuke Ogawa , Masahiro Sakai
IPC分类号： H04B1/06
CPC分类号： H04B7/0877 , H04B7/0817
摘要： When the diversity reception is cut, communications with the base station are continued. When it is judged by the judgment section of the mobile communication terminal that a predetermined disconnection requirement for disconnecting diversity reception is satisfied, the gain control section of the digital baseband circuitry 20 reduces the gain of the AGC14B contained in the RF receiver circuitry 10B constituting the disconnection target by a fixed value at fixed times. Diversity reception is cut after the level of the signal output by the AGC14B has reached zero.
摘要翻译：当分集接收被切断时，继续与基站的通信。当由移动通信终端的判断部分判断出满足用于断开分集接收的预定断开要求时，数字基带电路20的增益控制部分降低包含在RF接收机电路10中的AGC14B的增益 B在固定时间内以固定值构成断开目标。在AGC14B输出的信号的电平达到零之后，分路接收被切断。

75. 发明申请

US20050263742A1 Phosphor having resistance to deterioration caused by ultraviolet rays, and gas discharge display device of which image quality is not readily deteriorated over time 失效
标题翻译：具有耐紫外线劣化的荧光体，以及图像质量随着时间不容易劣化的气体放电显示装置
公开(公告)号：US20050263742A1
公开(公告)日：2005-12-01
申请号：US11130905
申请日：2005-05-17
申请人： Yoshihisa Nagasaki , Seigo Shiraishi , Masahiro Sakai
发明人： Yoshihisa Nagasaki , Seigo Shiraishi , Masahiro Sakai
IPC分类号： C09K11/54 , C09K11/57 , C09K11/59 , C09K11/77 , H01J11/12 , H01J11/42 , H01J1/62
CPC分类号： C09K11/7797 , C09K11/595 , C09K11/7734 , H01J11/12 , H01J11/42
摘要： A manganese-activated zinc silicate phosphor according to the present invention satisfies 0
摘要翻译：根据本发明的锰活化的硅酸锌荧光体满足0≤β≤α≤0.5和1.7≤β，其中α是表面区域中锌原子数与硅原子数之比的荧光体颗粒，包括荧光体颗粒的表面及其附近，值β是整个荧光体颗粒中的锌原子数与硅原子数的比率。

76. 发明申请

US20050028888A1 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 有权
标题翻译：外延晶片，外延晶片的制造方法，使用这些外延晶片抑制这些外延晶片的弯曲的方法和半导体多层结构
公开(公告)号：US20050028888A1
公开(公告)日：2005-02-10
申请号：US10909477
申请日：2004-08-02
申请人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
发明人： Masahiro Sakai , Mitsuhiro Tanaka , Takashi Egawa
IPC分类号： C30B25/20 , C30B29/40 , H01L21/205 , H01L33/12 , H01L33/32 , H01L29/00 , C30B1/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10T428/24942
摘要： A technique for suppressing bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer, mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), does not contains Al. The interlayer is epitaxially formed at a growth temperature lower than those of the group III-nitride layers, more specifically at a temperature of at least 350° C. and not more than 1000° C.
摘要翻译：提供了一种用于抑制外延晶片弯曲的技术。通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。主要由通式（GaxIny）N（0≤x≤1,0<= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或者由 GaN），不含有Al。中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃和不高于1000℃的温度下外延形成。

77. 发明授权

US06829178B2 Nonvolatile memory device 失效
标题翻译：非易失性存储器件
公开(公告)号：US06829178B2
公开(公告)日：2004-12-07
申请号：US10269971
申请日：2002-10-15
申请人： Hiyori Koyama , Kazuyoshi Oshima , Akihiko Hoshida , Kiichi Manita , Michitaro Kanamitsu , Shinji Udo , Kazue Kikuchi , Kazuaki Ujiie , Masahiro Sakai
发明人： Hiyori Koyama , Kazuyoshi Oshima , Akihiko Hoshida , Kiichi Manita , Michitaro Kanamitsu , Shinji Udo , Kazue Kikuchi , Kazuaki Ujiie , Masahiro Sakai
IPC分类号： G11C700
CPC分类号： G11C16/3436 , G11C16/04 , G11C29/44
摘要： A counter circuit for counting the number of fails generated during the write and erase processes executed in the predetermined unit such as a sector and a comparison circuit for judging whether the value counted with the counter circuit has exceeded or not the preset allowable value for the number of fails are provided. Accordingly, when the counted value of the counter circuit has exceeded the allowable value set to a register, the write process or erase process is not performed even when a write or erase command is inputted from an external circuit. Thereby, the required test time can be shortened for the electrically programmable and erasable nonvolatile semiconductor memory device such as a flash memory.
摘要翻译：一种用于计数在诸如扇区的预定单元中执行的写入和擦除处理期间产生的失败次数的计数器电路和用于判断由计数器电路计数的值是否超过了数字的预设容许值的比较电路提供失败。因此，当计数器电路的计数值已经超过设置给寄存器的容许值时，即使从外部电路输入写入或擦除命令，也不执行写入处理或擦除处理。因此，对于诸如闪存的电可编程和可擦除的非易失性半导体存储器件，可以缩短所需的测试时间。

78. 发明授权

US6004866A Method for manufacturing bonded wafer and bonded wafer manufactured thereby 失效
标题翻译：用于制造由此制造的接合晶片和接合晶片的方法
公开(公告)号：US6004866A
公开(公告)日：1999-12-21
申请号：US808655
申请日：1997-02-28
申请人： Masatake Nakano , Kiyoshi Mitani , Masahiro Sakai
发明人： Masatake Nakano , Kiyoshi Mitani , Masahiro Sakai
IPC分类号： H01L21/302 , H01L21/02 , H01L21/20 , H01L21/304 , H01L21/3065 , H01L27/12 , H01L21/30 , H01L21/46 , H01L21/461
CPC分类号： H01L21/2007
摘要： A method for manufacturing a bonded wafer comprises the steps of; mirror-polishing a surface of first and second substrates, bringing the mirror-polished surfaces of the substrates contact with each other to join them, and subjecting the substrates to a heat treatment to firmly bond them. One of the surfaces of the first and second substrates prior to bonding, or one surface of the bonded wafer is subjected to a polishing treatment for exerting little influence by irregularities on a rear surface of the one substrate or by a figure of a surface of a polishing plate which is in contact with the rear surface of the one substrate.
摘要翻译：一种接合晶片的制造方法，包括以下步骤：对第一基板和第二基板的表面进行镜面抛光，使基板的镜面抛光表面相互接触，使基板经受热处理以使其牢固地结合。在接合之前的第一和第二基板的表面之一或接合的晶片的一个表面经受抛光处理，以在一个基板的后表面上或由一个基板的表面的图形施加不规则的影响抛光板，其与一个基板的后表面接触。

79. 发明授权

US5885937A Superconducting tunnel junction element and superconducting device 失效
标题翻译：超导隧道结元件和超导装置
公开(公告)号：US5885937A
公开(公告)日：1999-03-23
申请号：US888657
申请日：1997-07-07
申请人： Hideaki Adachi , Masahiro Sakai , Akihiro Odagawa , Kentaro Setsune
发明人： Hideaki Adachi , Masahiro Sakai , Akihiro Odagawa , Kentaro Setsune
IPC分类号： H01L39/22
CPC分类号： H01L39/225
摘要： This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi.sub.2 Sr.sub.2 (Ca.sub.0.6 Y.sub.0.4)Cu.sub.2 O.sub.8, Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.6 and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 as the barrier layer between the superconducting oxide electrodes. The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr.sub.2 Cu.sub.2.7 Re.sub.0.3 O.sub.7, Sr.sub.2 CaCu.sub.2 O.sub.6 and (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. When using the superconducting oxides including Ba such as YBa.sub.2 Cu.sub.3 O.sub.7 for the electrode, forming a thin film between the electrode and the barrier is better to prevent Ba from reacting with Bi in the barrier layer. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.
摘要翻译：本发明提供了一种显示令人满意的约瑟夫逊效应的超导隧道结元件。元素包括Bi基层状化合物如Bi2Sr2（Ca0.6Y0.4）Cu2O8，Bi2Sr2Cu2O6和Bi2Sr2CaCu2O8作为超导氧化物电极之间的阻挡层。超导氧化物与Bi基化合物的结构匹配应该是好的。使用一些种类的Cu基超导氧化物如YSr2Cu2.7Re0.3O7，Sr2CaCu2O6和（La0.9Sr0.1）2CuO4用于电极以获得可在高温下工作的约瑟夫逊元素。当将包括诸如YBa2Cu3O7的Ba的超导氧化物用于电极时，在电极和势垒之间形成薄膜更好地防止Ba与阻挡层中的Bi反应。包括该元件的超导装置具有各种用途，例如磁检测使用，通信使用和计算使用。

80. 发明授权

US4482008A Air conditioner operable in a room cooling mode and a room warming mode using either outdoor air or a separate heat source as a source of heat 失效
标题翻译：空气调节器可以在室内冷却模式和室内加热模式下使用室外空气或单独的热源作为热源
公开(公告)号：US4482008A
公开(公告)日：1984-11-13
申请号：US362838
申请日：1982-03-29
申请人： Tamotsu Nomaguchi , Masahiro Sakai
发明人： Tamotsu Nomaguchi , Masahiro Sakai
IPC分类号： F24F11/08 , F25B13/00 , F25B41/04 , F25B29/00
CPC分类号： F24F11/085 , F25B13/00 , F25B41/04 , F25B2313/008 , F25B2313/009 , F25B2313/023 , F25B2313/0316 , F25B2500/26 , F25B2600/0261 , Y02B30/52
摘要： The disclosed airconditioner has a refrigerant compressor connected to a refrigerant circuit through a four-way valve in each of the room cooling mode and a first room warming mode of operation. The refrigerant circuit has an indoor heat exchanger, an externally heated heat exchanger, a piping, a first electromagnetic valve and an outdoor heat exchanger connected in series. A second electromagnetic valve is connected in parallel to the outdoor heat exchanger between the piping and the four-way valve to form the refrigerant circuit along with the indoor heat exchanger, the externally heated heat exchanger and the piping for the second room warming mode of operation. During the room cooling mode and first room warming mode of operation, the first electromagnetic valve is opened and the piping and the externally heated heat exchanger hold an amount of liquid refrigerant equal to the volume of the outdoor heat exchanger, while in the second room warming mode of operation in which the second electromagnetic valve and an electromagnetic valve connected across the compressor are open the outdoor heat exchange is filled with liquid refrigerant.
摘要翻译：所公开的空调机具有在室内冷却模式和第一室内加热方式中的每一个中通过四通阀连接到制冷剂回路的制冷剂压缩机。制冷剂回路具有串联连接的室内热交换器，外加热换热器，配管，第一电磁阀和室外热交换器。第二电磁阀与管道和四通阀之间的室外热交换器并联连接，与室内热交换器，外部加热热交换器和第二室内加热方式的管道一起形成制冷剂回路。在房间冷却模式和第一室内暖气运转模式下，第一电磁阀打开，管道和外部加热的热交换器保持与室外热交换器的体积相等的液体制冷剂的量，而在第二室内变暖第二电磁阀和连接在压缩机两端的电磁阀打开室外热交换器的操作模式被液体制冷剂填充。

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