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71. 发明申请

US20050258487A1 TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display 有权
标题翻译： TFT，制造TFT的方法，具有TFT的平板显示器以及制造平板显示器的方法
公开(公告)号：US20050258487A1
公开(公告)日：2005-11-24
申请号：US11131233
申请日：2005-05-18
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Tae-Min Kang , Hye-dong Kim
IPC分类号： H01L51/05 , H01L21/304 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/40
CPC分类号： H01L29/66742 , H01L21/76264 , H01L27/1222 , H01L27/1248 , H01L29/78606 , H01L29/78681
摘要： A thin film transistor (TFT) including a semiconductor film that may be simply patterned, a method of manufacturing the TFT, a flat panel display (FPD) including the TFT, and a method of manufacturing the FPD. The TFT includes a gate electrode, source and drain electrodes electrically insulated from the gate electrode, and a semiconductor film electrically insulated from the gate electrode and including source and drain regions coupled to the source and drain electrodes, respectively, and a channel region coupling the source and drain regions. The semiconductor film has a groove that isolates the channel region from an adjacent TFT.
摘要翻译：一种薄膜晶体管（TFT），其包括可以被简单地构图的半导体膜，TFT的制造方法，包括TFT的平板显示器（FPD）以及FPD的制造方法。 TFT包括栅电极，与栅电极电绝缘的源电极和漏电极以及与栅电极电绝缘并且分别耦合到源电极和漏电极的源极和漏极区域的半导体膜以及耦合到栅极电极的沟道区域源极和漏极区域。半导体膜具有将沟道区域与相邻TFT隔离的沟槽。

72. 发明授权

US07956354B2 Method of manufacturing an organic thin film transistor, and an organic electroluminescene display device having the organic thin film transistor 有权
标题翻译：有机薄膜晶体管的制造方法以及具有有机薄膜晶体管的有机电致发光显示装置
公开(公告)号：US07956354B2
公开(公告)日：2011-06-07
申请号：US12504312
申请日：2009-07-16
申请人： Min-Chul Suh , Jae-Bon Koo
发明人： Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0017 , H01L27/283 , H01L27/3244 , H01L51/0019 , H01L51/0541 , H01L51/0545 , Y10T428/31504
摘要： Provided is a method of patterning an organic thin film which can prevent surface damage of an organic semiconductor layer. Also, an organic thin film transistor that can reduce an off-current and can prevent surface damage of the organic semiconductor layer and a method of manufacturing the organic thin film transistor, and an organic electroluminescence display device having the organic thin film transistor are provided. The method of patterning the organic thin film includes forming the organic thin film on a substrate, selectively printing a mask material on a portion of the organic thin film, dry etching an exposed portion of the organic thin film using the mask material, and removing the mask material.
摘要翻译：提供了可以防止有机半导体层的表面损伤的有机薄膜图案化的方法。此外，提供了可以减少截止电流并且可以防止有机半导体层的表面损伤的有机薄膜晶体管和有机薄膜晶体管的制造方法，以及具有有机薄膜晶体管的有机电致发光显示装置。图案化有机薄膜的方法包括在基板上形成有机薄膜，在有机薄膜的一部分上选择性地印刷掩模材料，使用掩模材料干燥蚀刻有机薄膜的暴露部分，面具材料。

73. 发明授权

US07816666B2 Preventing substrate deformation 有权
标题翻译：防止基材变形
公开(公告)号：US07816666B2
公开(公告)日：2010-10-19
申请号：US11271867
申请日：2005-11-14
申请人： Jae-Bon Koo , Hyun-Soo Shin , Min-Chul Suh , Yeon-Gon Mo
发明人： Jae-Bon Koo , Hyun-Soo Shin , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L21/02532 , C23C16/0272 , H01L21/02425 , H01L21/02488 , H01L29/78603
摘要： A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.
摘要翻译：防止由于热应力或沉积应力而变形的基板包括布置在基板的一个表面上的变形防止层。衬底可以包括布置在衬底的一个表面上的薄膜晶体管和设置在衬底的另一个表面上并且包括至少一个层的变形防止层。

74. 发明授权

US07579653B2 TFT, electronic device having the TFT, and flat display device having the TFT 有权
标题翻译：具有TFT的TFT，电子器件和具有TFT的平面显示器件
公开(公告)号：US07579653B2
公开(公告)日：2009-08-25
申请号：US11184829
申请日：2005-07-20
申请人： Min-Chul Suh , Jae-Bon Koo , Hye-Dong Kim
发明人： Min-Chul Suh , Jae-Bon Koo , Hye-Dong Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1222 , B82Y10/00 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/78681 , H01L29/78696
摘要： The invention provides an improved thin film transistor (TFT) that can be formed at room temperature and has an improved contact resistance between an active layer and source and drain electrodes, and further provides a flat display device using such a TFT. The TFT includes an active layer including at least two nano particle layers which include at least one nano particle type, an insulating layer interposed between the nano particle layers, a gate electrode insulated from the active layer, and source and drain electrodes formed in respective channels, the source and drain electrodes contact one of the nano particle layers of the active layer. The structure of the TFT facilitates the simultaneous manufacturing of a plurality of different types of TFTs.
摘要翻译：本发明提供一种改进的薄膜晶体管（TFT），其可以在室温下形成，并且在有源层和源极和漏极之间具有改善的接触电阻，并且还提供使用这种TFT的平面显示装置。 TFT包括至少两个包括至少一种纳米颗粒的纳米颗粒层的活性层，介于纳米颗粒层之间的绝缘层，与有源层绝缘的栅电极，以及形成在各个通道中的源极和漏极源极和漏极接触有源层的纳米颗粒层之一。 TFT的结构有助于同时制造多种不同类型的TFT。

75. 发明授权

US07579199B2 TFT, flat panel display device having the same, method of manufacturing TFT, method of manufacturing flat panel display device, and method of manufacturing donor sheet 有权
标题翻译： TFT，具有该TFT的平板显示装置，TFT的制造方法，平板显示装置的制造方法以及制造供体片的方法
公开(公告)号：US07579199B2
公开(公告)日：2009-08-25
申请号：US12004404
申请日：2007-12-21
申请人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
发明人： Min-Chul Suh , Nam-Choul Yang , Jae-Bon Koo , Hye-Dong Kim , Ho-Kyoon Chung , Ul-Ho Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/04 , B82Y20/00 , B82Y30/00 , H01L27/3244 , H01L29/66969 , H01L29/786 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L51/0013 , H01L51/0097 , H01L2251/5338 , H01L2251/5369
摘要： A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
摘要翻译：用于TFT和基板的有源层的纳米颗粒的柔性平板显示器是柔性的并且可以在室温下制造，具有该平板显示装置的平板显示装置，TFT的制造方法，制造方法平板显示装置，以及制造供体薄片的方法。在制造显示器中的TFT时，使用供体片将纳米颗粒从片材转移到衬底。薄膜晶体管被放置在基板上，并且包括具有沿长度方向布置的至少一个P型或N型纳米颗粒的沟道区，其中P型或N型纳米颗粒的长度方向平行于在衬底上分隔的P型或N型纳米颗粒线。

76. 发明授权

US07507990B2 Organic thin film transistor having circular organic semiconductor layer and flat panel display including the same 有权
标题翻译：具有圆形有机半导体层的有机薄膜晶体管和包括其的平板显示器
公开(公告)号：US07507990B2
公开(公告)日：2009-03-24
申请号：US11281951
申请日：2005-11-16
申请人： Min-Chul Suh , Jae-Bon Koo
发明人： Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0545 , H01L51/0005 , H01L51/0021
摘要： An organic thin film transistor comprising an organic semiconductor layer that does not cause a coffee stain effect and can prevent an imperfect contact with source and drain electrodes, and a flat panel display apparatus comprising the organic thin film transistor are provided. The organic thin film transistor comprises a gate electrode; source and drain electrodes insulated from the gate electrode; and an organic semiconductor layer insulated from the gate electrode and contacts the source and drain electrodes, wherein the organic semiconductor layer has a circular shape when viewed through a substrate on which the organic thin film transistor is formed, and an edge portion of at least one of the source and drain electrodes contacting the organic semiconductor layer having a curved shape that is concave toward the organic semiconductor layer.
摘要翻译：提供了一种有机薄膜晶体管，其包括不引起咖啡污染效应的有机半导体层，并且可以防止与源极和漏极的不完全接触，以及包括有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括栅电极; 源极和漏极与栅电极绝缘; 以及与栅电极绝缘并与源电极和漏电极接触的有机半导体层，其中当通过其上形成有机薄膜晶体管的衬底观察时，有机半导体层具有圆形形状，并且至少一个与具有向有机半导体层凹入的弯曲形状的有机半导体层接触的源电极和漏电极。

77. 发明授权

US07279714B2 Flat panel display device 有权
标题翻译：平板显示设备
公开(公告)号：US07279714B2
公开(公告)日：2007-10-09
申请号：US11187873
申请日：2005-07-25
申请人： Jae-Bon Koo , Min-Chul Suh
发明人： Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/04
CPC分类号： H01L27/3262 , H01L27/124 , H01L27/3276
摘要： A flat panel display device has a transistor in which cross-talk is minimized. The flat panel display device includes a substrate, a first gate electrode formed on the substrate, a first electrode insulated from the first gate electrode, a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane, a semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode, and a display element including a pixel electrode electrically connected to one of the first electrode and the second electrode.
摘要翻译：平板显示装置具有串扰最小化的晶体管。平板显示装置包括基板，形成在基板上的第一栅极电极，与第一栅电极绝缘的第一电极，与第一栅电极绝缘并在同一平面内包围第一电极的第二电极，半导体层与第一栅电极绝缘并与第一电极和第二电极接触，以及显示元件，包括电连接到第一电极和第二电极之一的像素电极。

78. 发明授权

US07250629B2 Semiconductor device and flat panel display device having the same 有权
标题翻译：半导体装置及具有该半导体装置的平板显示装置
公开(公告)号：US07250629B2
公开(公告)日：2007-07-31
申请号：US11186750
申请日：2005-07-22
申请人： Jae-Bon Koo , Min-Chul Suh
发明人： Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/15
CPC分类号： H01L27/3262 , H01L27/124 , H01L27/283 , H01L51/56 , H01L2227/323
摘要： A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third electrode surrounding the second electrode in the same plane, a fourth electrode surrounding the third electrode in the same plane, a first gate electrode insulated from the first through fourth electrodes and arranged on another plane separate from the first through fourth electrodes to correspond to a space between the first electrode and the second electrode, a second gate electrode insulated from the first through fourth electrodes and arranged on yet another plane separate from the plane of the first through fourth electrodes to correspond to a space between the third electrode and the fourth electrode, and a semiconductor layer insulated from the first gate electrode and the second gate electrode and contacting the first through fourth electrodes.
摘要翻译：具有两个薄膜晶体管的半导体器件，其中串扰最小化，以及具有该薄膜晶体管的平板显示器件。半导体器件包括第一电极，围绕同一平面中的第一电极的第二电极，围绕同一平面中的第二电极的第三电极，围绕同一平面中的第三电极的第四电极，与第一电极绝缘的第一电极所述第一至第四电极布置在与所述第一至第四电极分开的另一平面上，以对应于所述第一电极和所述第二电极之间的空间;第二栅电极，与所述第一至第四电极绝缘并且布置在与所述第一至第四电极的平面对应于所述第三电极和所述第四电极之间的空间，以及与所述第一栅电极和所述第二栅电极绝缘并与所述第一至第四电极接触的半导体层。

79. 发明授权

US07170088B2 Organic thin film transistor and flat panel display comprising the same 有权
标题翻译：有机薄膜晶体管和包括其的平板显示器
公开(公告)号：US07170088B2
公开(公告)日：2007-01-30
申请号：US11145933
申请日：2005-06-07
申请人： Jae-Bon Koo , Min-Chul Suh
发明人： Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/08 , H01L29/76
CPC分类号： H01L51/0545 , H01L51/105
摘要： An organic TFT including a gate electrode, a source electrode and a drain electrode insulated from the gate electrode, and an organic semiconductor layer that is insulated from the gate electrode and contacts the source electrode and the drain electrode. The length of portions of edges of the source electrode, which contact the organic semiconductor layer and face the drain electrode, is greater than the length of portions of edges of the drain electrode, which contact the organic semiconductor layer and face the source electrode to reduce the contact resistance between the source electrode and the organic semiconductor layer.
摘要翻译：包括与栅电极绝缘的栅电极，源极和漏电极的有机TFT以及与栅电极绝缘并与源电极和漏电极接触的有机半导体层。与有机半导体层接触并面向漏电极的源电极的边缘部分的长度大于与有机半导体层接触并面对源电极以减少的漏电极的边缘部分的长度源电极和有机半导体层之间的接触电阻。

80. 发明申请

US20060208253A1 Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
公开(公告)号：US20060208253A1
公开(公告)日：2006-09-21
申请号：US11378011
申请日：2006-03-17
申请人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
发明人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/08
CPC分类号： H01L51/0003 , H01L51/0545
摘要： An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
摘要翻译：公开了一种有机薄膜晶体管，包括该有机薄膜晶体管的平面显示装置和制造该有机薄膜晶体管的方法。在一个实施例中，有机薄膜晶体管包括：i）衬底，ii）设置在衬底上的栅电极，iii）设置在栅电极上的栅极绝缘膜，iv）与每个间隔开的源电极和漏电极 v）与源电极和漏极接触的有机半导体层，并且具有与相邻的有机薄膜晶体管不同的边缘，以及vi）设置成覆盖有机半导体的悬臂层接触设置在有机半导体层中或其下方的层的一部分，并且暴露于有机半导体层的边缘的外侧。根据一个实施例，容易获得有机半导体层的图案化效果，并且提高诸如开/关比的特性。

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