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71. 发明授权

US08735882B2 ZnO based semiconductor devices and methods of manufacturing the same 有权
标题翻译：基于ZnO的半导体器件及其制造方法
公开(公告)号：US08735882B2
公开(公告)日：2014-05-27
申请号：US12929323
申请日：2011-01-14
申请人： Chang-jung Kim , I-hun Song , Dong-hun Kang , Young-soo Park
发明人： Chang-jung Kim , I-hun Song , Dong-hun Kang , Young-soo Park
IPC分类号： H01L29/12
CPC分类号： H01L29/7869
摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO) Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦ about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.
摘要翻译：半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z和nlE;约3.15和约0.55≤n1E; y / z＆约1.70。可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

72. 发明申请

US20130050148A1 TOUCH SENSING AND REMOTE SENSING OPTICAL TOUCH SCREEN APPARATUSES 有权
标题翻译：触摸感应和远程感测光学触屏设备
公开(公告)号：US20130050148A1
公开(公告)日：2013-02-28
申请号：US13434164
申请日：2012-03-29
申请人： Sang-hun Jeon , I-hun Song , Seung-eon Ahn , Young Kim , Chang-jung Kim , Yong-woo Jeon
发明人： Sang-hun Jeon , I-hun Song , Seung-eon Ahn , Young Kim , Chang-jung Kim , Yong-woo Jeon
IPC分类号： G06F3/042
CPC分类号： G06F3/042 , G06F3/0386 , H01L27/14679
摘要： Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.
摘要翻译：通过使用包括氧化物半导体晶体管的光传感器晶体管，具有遥感和触摸感测的光学触摸屏设备。光学触摸屏装置包括排列成多行和多列的多个感测像素的像素阵列。每个感测像素包括用于感测由外部光源照射的光的感光像素和用于感测被屏幕触摸反射的显示光的触摸感测像素。感光像素包括串联连接的第一光传感器晶体管和第一开关晶体管，并且触摸感测像素包括彼此串联连接的第二光传感器晶体管和第二开关晶体管。

73. 发明申请

US20120139876A1 Light Sensing Circuit, Method Of Manufacturing The Same, And Optical Touch Panel Including The Light Sensing Circuit 有权
标题翻译：光感应电路及其制造方法以及包括光感应电路的光学触摸面板
公开(公告)号：US20120139876A1
公开(公告)日：2012-06-07
申请号：US13165194
申请日：2011-06-21
申请人： Sang-hun Jeon , I-hun Song , Seung-eon Ahn , Chang-jung Kim
发明人： Sang-hun Jeon , I-hun Song , Seung-eon Ahn , Chang-jung Kim
IPC分类号： G06F3/042 , H01L31/18 , H01L31/0264
CPC分类号： G06F3/0412 , G06F3/0386 , G06F3/042 , G06F2203/04103
摘要： A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger.
摘要翻译：使用氧化物半导体晶体管的光感测电路，制造光感测电路的方法以及包括光感测电路的光学触摸面板。由于光感测电路仅在一个基板上形成一个光传感器晶体管和一个开关晶体管，因此简化了光感测电路的结构。此外，由于光传感器晶体管和开关晶体管具有相同的结构，因此也简化了光感测电路的制造方法。此外，由于使用光感测电路的光学触摸面板或图像获取装置使用具有简单结构的光感测电路并且不使用电容器，所以可以使光学触摸面板或图像采集装置变得越来越薄。

74. 发明申请

US20100296347A1 Method of erasing device including complementary nonvolatile memory devices 有权
标题翻译：擦除装置的方法包括互补的非易失性存储装置
公开(公告)号：US20100296347A1
公开(公告)日：2010-11-25
申请号：US12662989
申请日：2010-05-14
申请人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
发明人： Yoon-dong Park , Jo-won Lee , Chung-woo Kim , Eun-hong Lee , Sun-ae Seo , Woo-joo Kim , Hee-soon Chae , Soo-doo Chae , I-hun Song
IPC分类号： G11C16/04
CPC分类号： G11C11/5621 , H01L27/0688 , H01L27/11521 , H01L27/11551
摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
摘要翻译：提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。第一和第二非易失性存储器被布置成使得其上表面相邻。

75. 发明申请

US20090096060A1 Antifuse structures, antifuse array structures, methods of manufacturing the same 有权
标题翻译：防污结构，反熔丝阵列结构，制造方法
公开(公告)号：US20090096060A1
公开(公告)日：2009-04-16
申请号：US12216094
申请日：2008-06-30
申请人： Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
发明人： Deok-kee Kim , Yoon-dong Park , Seung-hoon Lee , I-hun Song , Won-joo Kim , Young-gu Jin , Hyuk-soon Choi , Suk-pil Kim
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L23/5252 , G11C17/16 , H01L27/1021 , H01L2924/0002 , H01L2924/00
摘要： Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.
摘要翻译：提供了防泡结构，反熔丝阵列，制造方法和操作方法。反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。反熔丝阵列包括排列成阵列的多个反熔丝结构。

76. 发明授权

US07220601B2 Method of forming nano-sized MTJ cell without contact hole 有权
标题翻译：形成无接触孔的纳米尺寸MTJ电池的方法
公开(公告)号：US07220601B2
公开(公告)日：2007-05-22
申请号：US11033830
申请日：2005-01-13
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
摘要翻译：提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

77. 发明授权

US07220599B2 Method for manufacturing magneto-resistive random access memory 有权
标题翻译：制造磁阻随机存取存储器的方法
公开(公告)号：US07220599B2
公开(公告)日：2007-05-22
申请号：US10950584
申请日：2004-09-28
申请人： Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
发明人： Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： H01L27/228 , B82Y10/00
摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.
摘要翻译：磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。

78. 发明申请

US20060281017A1 Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
标题翻译：用于EUV光刻的反射掩模和制造反射掩模的方法
公开(公告)号：US20060281017A1
公开(公告)日：2006-12-14
申请号：US11441835
申请日：2006-05-26
申请人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
发明人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
IPC分类号： G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
摘要翻译：一种用于极紫外（EUV）光刻的反射掩模及其制造方法，其中反射掩模包括基板，在基板上形成为多层结构的下反射层，并且包括反射EUV光的材料，在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层，并且产生来自上层的反射光之间的相消干涉反射层和来自下反射层的反射光。可以减少阴影效应的入射，并且可以消除不必要的EUV光，使得反射掩模上的图案可以精确地投影在硅晶片上。由于相位反转层包括与反射层和吸收层相同的材料，因此可以容易地处理掩模制造工艺。

79. 发明授权

US09576992B2 Light-sensing apparatuses, methods of driving the light-sensing apparatuses, and optical touch screen apparatuses including the light-sensing apparatuses 有权
标题翻译：感光装置，驱动感光装置的方法以及包括光感测装置的光学触摸屏装置
公开(公告)号：US09576992B2
公开(公告)日：2017-02-21
申请号：US13435666
申请日：2012-03-30
申请人： Sang-hun Jeon , I-hun Song , Seung-eon Ahn , Chang-jung Kim , Young Kim
发明人： Sang-hun Jeon , I-hun Song , Seung-eon Ahn , Chang-jung Kim , Young Kim
IPC分类号： H01L27/00 , H01L27/146 , G06F3/042
CPC分类号： H01L27/14609 , G06F3/042 , G06F2203/04103
摘要： Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.
摘要翻译：光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是并且光传感器晶体管包括相对光敏的通道材料。光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

80. 发明申请

US20110101343A1 ZnO based semiconductor devices and methods of manufacturing the same 有权
标题翻译：基于ZnO的半导体器件及其制造方法
公开(公告)号：US20110101343A1
公开(公告)日：2011-05-05
申请号：US12929324
申请日：2011-01-14
申请人： Chang-jung Kim , I-hun Song , Dong-hun Kang , Young-soo Park
发明人： Chang-jung Kim , I-hun Song , Dong-hun Kang , Young-soo Park
IPC分类号： H01L29/12 , H01L33/16
CPC分类号： H01L29/7869
摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO) Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70.Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.
摘要翻译：半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

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