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71. 发明授权

US09331306B2 Organic optical device and protective component of organic optical device 有权
标题翻译：有机光学器件和有机光学器件的保护元件
公开(公告)号：US09331306B2
公开(公告)日：2016-05-03
申请号：US13302213
申请日：2011-11-22
申请人： Shunpei Yamazaki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L51/52 , H01L27/32
CPC分类号： H01L51/5253 , H01L27/3258 , H01L51/5275
摘要： An organic optical device which can suppress deterioration due to moisture or an impurity is provided. An organic optical device includes a supporting body, a functional layer provided over the supporting body, and a light-emitting body containing an organic compound provided over the functional layer. The functional layer includes an insulating film containing gallium or aluminum, zinc, and oxygen. The supporting body and the functional layer each have a property of transmitting light with a wavelength of greater than or equal to 400 nm and less than or equal to 700 nm. By using the insulating film containing gallium or aluminum, zinc, and oxygen as a protective film, entry of moisture or an impurity into an organic compound or a metal material can be suppressed.
摘要翻译：提供了能够抑制由于水分或杂质引起的劣化的有机光学元件。有机光学器件包括支撑体，设置在支撑体上的功能层，以及包含设置在功能层上的有机化合物的发光体。功能层包括含有镓或铝，锌和氧的绝缘膜。支撑体和功能层各自具有透射波长大于或等于400nm且小于或等于700nm的光的性质。通过使用含有镓或铝，锌和氧的绝缘膜作为保护膜，可以抑制水分或杂质进入有机化合物或金属材料。

72. 发明授权

US09305481B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09305481B2
公开(公告)日：2016-04-05
申请号：US12887179
申请日：2010-09-21
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G09G5/00 , G09G3/20 , G02F1/1345
CPC分类号： H01L27/1225 , G02F1/1345 , G02F1/1368 , G09G3/20 , G09G2310/0275 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L29/7869
摘要： A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region.
摘要翻译：显示装置包括驱动电路，该驱动电路包括逻辑电路，该逻辑电路包括作为耗尽型晶体管的第一晶体管和作为增强型晶体管的第二晶体管; 电连接到驱动电路的信号线; 包括像素的像素，所述像素的显示状态通过输入来自所述驱动电路的通过所述信号线的图像数据的信号进行控制; 施加参考电压的参考电压线; 以及第三晶体管，其是耗尽型晶体管，并控制信号线与参考电压线之间的电连接。第一至第三晶体管各自包括包括沟道形成区的氧化物半导体层。

73. 发明授权

US09257594B2 Thin film transistor with an oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的薄膜晶体管
公开(公告)号：US09257594B2
公开(公告)日：2016-02-09
申请号：US12553119
申请日：2009-09-03
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi
IPC分类号： H01L29/10 , H01L33/00 , H01L27/12 , H01L29/786 , H01L29/66
CPC分类号： H01L33/0041 , H01L27/1225 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.
摘要翻译：本发明的目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件以及用于制造具有高质量生产率的半导体器件的方法。要点是在栅极绝缘层上形成漏极或源电极层之后形成作为源极或漏极区的低电阻氧化物半导体层，并在其上形成作为半导体层的氧化物半导体膜。优选使用氧 - 过量氧化物半导体层作为半导体层，并且使用缺氧氧化物半导体层作为源极区和漏极区。

74. 发明授权

US09214474B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09214474B2
公开(公告)日：2015-12-15
申请号：US13535506
申请日：2012-06-28
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/78 , H01L27/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/7782 , H01L29/78603 , H01L29/78696
摘要： To provide a transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use and provide a semiconductor device including the transistor, in a transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating film, and a gate electrode are stacked in this order over an oxide semiconductor insulating film, an oxide semiconductor stack layer which includes at least two oxide semiconductor layers with energy gaps different from each other and a mixed region therebetween is used as the semiconductor layer.
摘要翻译：为了提供一种包括氧化物半导体层并且具有根据预期用途需要的电特性的晶体管，并且在包括半导体层，源极和漏极电极层，栅极绝缘膜和栅电极依次堆叠在氧化物半导体绝缘膜上，氧化物半导体堆叠层，其包括具有彼此不同的能隙的至少两个氧化物半导体层以及它们之间的混合区域作为半导体层。

75. 发明授权

US09196739B2 Semiconductor device including oxide semiconductor film and metal oxide film 有权
标题翻译：包括氧化物半导体膜和金属氧化物膜的半导体器件
公开(公告)号：US09196739B2
公开(公告)日：2015-11-24
申请号：US13074635
申请日：2011-03-29
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606
摘要： A transistor is provided in which the top surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film, and an insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. In addition, the oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) through heat treatment in which impurities such as hydrogen, moisture, hydroxyl, and hydride are removed from the oxide semiconductor and oxygen which is one of main component materials of the oxide semiconductor is supplied and is also reduced in a step of removing the impurities.
摘要翻译：提供了一种晶体管，其中氧化物半导体膜的顶表面部分设置有含有与氧化物半导体膜类似的组成的金属氧化物膜，以及含有与金属氧化物膜和氧化物不同的成分的绝缘膜半导体膜形成为与与氧化物半导体膜接触的表面相反的金属氧化物膜的表面接触。此外，用于晶体管的有源层的氧化物半导体膜是通过热处理而被高度纯化成电i型（本征的）的氧化物半导体膜，其中从其中去除诸如氢，水分，羟基和氢化物的杂质供给作为氧化物半导体的主要成分材料之一的氧化物半导体和氧，并且在除去杂质的工序中还可以进行还原。

76. 发明授权

US09171805B2 Substrate identification circuit and semiconductor device 有权
公开(公告)号：US09171805B2
公开(公告)日：2015-10-27
申请号：US11054953
申请日：2005-02-11
申请人： Kiyoshi Kato , Shunpei Yamazaki
发明人： Kiyoshi Kato , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/76 , H01L23/544 , H01L27/12
CPC分类号： H01L23/544 , H01L27/12 , H01L27/1214 , H01L2223/54433 , H01L2223/5444 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Provided is a substrate identification circuit that generates a numeric value, whose duplication is difficult and which is proper to a substrate, at low cost and a semiconductor device having such a substrate identification circuit. A substrate identification circuit 304 is produced by utilizing variations in characteristics among TFTs formed on a substrate having an insulating surface. The substrate identification circuit 304 includes a plurality of proper bit generating circuits, each of which is constructed from a plurality of TFTs and outputs a one-bit random number based on variations in characteristics among the plurality of TFTs. The substrate identification circuit generates a numeric value proper to the substrate using the one-bit random number. The substrate identification circuit may include a circuit that makes a judgment by comparing the numeric value proper to the substrate with an identification number inputted from the outside.

77. 发明授权

US09136530B2 Energy storage device and manufacturing method thereof 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US09136530B2
公开(公告)日：2015-09-15
申请号：US13113217
申请日：2011-05-23
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01M4/04 , H01M4/1395 , H01M4/525 , H01G11/24 , H01M4/52 , H01M4/24 , H01G11/28 , H01G11/26 , H01M4/38
CPC分类号： H01M4/1395 , H01G11/24 , H01G11/26 , H01G11/28 , H01M4/04 , H01M4/0404 , H01M4/0428 , H01M4/242 , H01M4/386 , H01M4/52 , H01M4/521 , H01M4/523 , H01M4/525 , Y02E60/122 , Y02P70/54 , Y10T29/49108
摘要： An energy storage device whose discharge capacity can be improved and a method for manufacturing the energy storage device are provided. A method for manufacturing an energy storage device, in which a metal element is dispersed over a current collector, and a crystalline silicon layer including a whisker is formed as an active material layer over the surface of the current collector on which the metal element is dispersed by low pressure chemical vapor deposition (LPCVD) in which heating is performed using a deposition gas containing silicon. Having whiskers in the active material layer as described above, the surface area of the active material layer is increased; thus, the discharge capacity of the energy storage device can be increased.
摘要翻译：能够提高放电容量的能量储存装置和能量储存装置的制造方法。在金属元素分散的集电体的表面上形成作为活性物质层的制造其中金属元素分散在集电体上的能量存储装置的方法和包括晶须的晶体硅层通过低压化学气相沉积（LPCVD），其中使用含硅的沉积气体进行加热。如上所述在活性物质层中具有晶须，活性物质层的表面积增加; 从而可以提高储能装置的放电容量。

78. 发明授权

US09123912B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09123912B2
公开(公告)日：2015-09-01
申请号：US13420030
申请日：2012-03-14
申请人： Shunpei Yamazaki , Nobuharu Ohsawa
发明人： Shunpei Yamazaki , Nobuharu Ohsawa
IPC分类号： H01L51/56 , H01L51/52 , H01L51/50
CPC分类号： H01L51/5265 , H01L51/5036 , H01L51/56 , H01L2251/5315 , H01L2251/5361 , H01L2251/558
摘要： To provide a method for manufacturing light-emitting devices with different emission colors using EL layers formed using the same apparatus and condition, and a light-emitting device with high added value. A substrate in which a transparent conductive layer is formed in advance on a surface over which an EL layer is to be formed and another substrate in which a transparent conductive layer with a thickness different from that of the transparent conductive layer are prepared, and EL layers are formed over the substrates using the same apparatus and condition. Thus, even when the EL layers are formed using the same apparatus and condition, optical path lengths of the substrates can be different.
摘要翻译：为了提供一种使用使用相同装置和条件形成的EL层来制造具有不同发射颜色的发光器件的方法和具有高附加值的发光器件。预先在要形成EL层的表面上形成透明导电层的衬底和其中制备具有与透明导电层的厚度不同的透明导电层的另一衬底，以及EL层使用相同的装置和条件在基板上形成。因此，即使使用相同的装置和条件形成EL层，也可以使基板的光路长度不同。

79. 发明授权

US09117415B2 Display device and method for operating the same 有权
标题翻译：显示装置及其操作方法
公开(公告)号：US09117415B2
公开(公告)日：2015-08-25
申请号：US11115263
申请日：2005-04-27
申请人： Shunpei Yamazaki , Jun Koyama , Masaaki Hiroki , Munehiro Azami , Mitsuaki Osame , Yutaka Shionoiri , Shou Nagao
发明人： Shunpei Yamazaki , Jun Koyama , Masaaki Hiroki , Munehiro Azami , Mitsuaki Osame , Yutaka Shionoiri , Shou Nagao
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3651 , G09G3/3688 , G09G2310/027 , G09G2320/0271 , G09G2320/0276 , G09G2320/0285
摘要： A display device comprises a display panel composed of a pixel portion in which a plurality of TFTs are arranged in matrix, a source driver, and a gate driver, an image signal processing circuit for processing an image signal input from an external, and a control circuit for controlling the display panel and the image signal processing circuit. The image signal processing circuit corrects the image signal on the basis of a correction table. By feeding the display panel with the corrected image signal, the display device can provide a good quality image.
摘要翻译：显示装置包括由矩阵状的多个TFT排列的像素部分，源极驱动器和栅极驱动器构成的显示面板，用于处理从外部输入的图像信号的图像信号处理电路，以及控制部用于控制显示面板和图像信号处理电路的电路。图像信号处理电路基于校正表来校正图像信号。通过向显示面板馈送校正后的图像信号，显示装置可以提供高质量的图像。

80. 发明授权

US09112224B2 Energy storage device and method for manufacturing the same 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US09112224B2
公开(公告)日：2015-08-18
申请号：US13163879
申请日：2011-06-20
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01M4/38 , H01G11/06 , H01G11/50 , H01M4/134 , H01M4/36 , H01M4/40 , H01M4/04 , H01M10/052 , H01M4/02
CPC分类号： H01M4/386 , H01G11/06 , H01G11/30 , H01G11/50 , H01G11/66 , H01G11/76 , H01M4/0404 , H01M4/0419 , H01M4/0426 , H01M4/0471 , H01M4/134 , H01M4/366 , H01M4/405 , H01M4/661 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： Provided are an energy storage device including an electrode in which lithium is introduced into a silicon layer and a method for manufacturing the energy storage device. A silicon layer is formed over a current collector, a solution including lithium is applied on the silicon layer, and heat treatment is performed thereon; thus, at least lithium can be introduced into the silicon layer. By using the solution including lithium, even when the silicon layer includes a plurality of silicon microparticles, the solution including lithium can enter a space between the microparticles and lithium can be introduced into the silicon microparticles which are in contact with the solution including lithium. Moreover, even when the silicon layer is a thin silicon film or includes a plurality of whiskers or whisker groups, the solution can be uniformly applied; accordingly, lithium can be included in silicon easily.
摘要翻译：提供了一种能量存储装置，其包括将锂引入硅层的电极和能量存储装置的制造方法。在集电器上形成硅层，将包含锂的溶液施加在硅层上，对其进行热处理; 因此，至少可以将锂引入到硅层中。通过使用包含锂的溶液，即使当硅层包括多个硅微粒时，包含锂的溶液可以进入微粒之间的空间，并且可以将锂引入与包括锂的溶液接触的硅微粒中。此外，即使当硅层是薄的硅膜或者包括多个晶须或晶须基团时，也可以均匀地施加溶液; 因此，锂可以容易地包含在硅中。

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