专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US08643018B2 Semiconductor device comprising a pixel portion and a driver circuit 有权
标题翻译：半导体器件包括像素部分和驱动器电路
公开(公告)号：US08643018B2
公开(公告)日：2014-02-04
申请号：US13616019
申请日：2012-09-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
IPC分类号： H01L29/04 , H01L29/10 , H01L27/14 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。用于驱动电路的薄膜晶体管的源极和漏极由金属形成。使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

72. 发明授权

US08610120B2 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08610120B2
公开(公告)日：2013-12-17
申请号：US13227116
申请日：2011-09-07
申请人： Hiroyuki Miyake , Ryo Arasawa , Koji Kusunoki
发明人： Hiroyuki Miyake , Ryo Arasawa , Koji Kusunoki
IPC分类号： H01L29/786 , H01L21/36
CPC分类号： H01L27/1225 , G02F1/13439 , G02F1/13458 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F2001/13606 , H01L27/124 , H01L29/41733
摘要： A photolithography step and an etching step for forming an island-shaped semiconductor layer is omitted, and a liquid crystal display device is manufactured through the following four photolithography steps: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole (including removal of an insulating layer or the like in a region other than the contact hole), and a step for forming a pixel electrode (including a wiring or the like formed from the same layer). In the step of forming the contact hole, a groove portion in which the semiconductor layer is removed is formed, so that formation of parasitic channels is prevented.
摘要翻译：省略了用于形成岛状半导体层的光刻步骤和蚀刻步骤，并且通过以下四个光刻步骤制造液晶显示装置：用于形成栅极电极（包括由相同层），用于形成源电极和漏电极（包括由同一层形成的布线等）的步骤，形成接触孔的步骤（包括在其它区域中除去绝缘层等的步骤以及用于形成像素电极（包括由同一层形成的布线等）的步骤。在形成接触孔的步骤中，形成去除了半导体层的槽部，从而防止形成寄生通道。

73. 发明授权

US08605076B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08605076B2
公开(公告)日：2013-12-10
申请号：US13332491
申请日：2011-12-21
申请人： Tomoyuki Iwabuchi , Hiroyuki Miyake
发明人： Tomoyuki Iwabuchi , Hiroyuki Miyake
IPC分类号： G09G5/00
CPC分类号： G09G3/3266 , G09G3/3233 , G09G3/3275 , G09G2300/0861 , G09G2300/0871 , G09G2320/0223 , G09G2320/0242 , G09G2320/041 , G09G2320/043 , G09G2330/021
摘要： Power consumption required for charging and discharging a source signal line is reduced in an active matrix EL display device. A bipolar transistor (Bi1) has a base terminal B connected to an output terminal c1 of an operational amplifier (OP1), a collector terminal C connected to a low power potential (GND), and an emitter terminal E connected to a resistor R2. A high power potential (VBH) is a potential in synchronization with a high power potential of a light emitting element. A potential of the output terminal c1 of the operational amplifier (OP1) is outputted as a buffer low power potential (VBL). The low power potential (VBL) corresponds to a potential difference between the high power potential (VBH) and a high power potential (V1). Accordingly, the low power potential (VBL) can follow the high power potential (VBH), that is a high power potential of the light emitting element.
摘要翻译：在有源矩阵EL显示装置中减少了对源极信号线的充电和放电所需的功耗。双极晶体管（Bi1）具有连接到运算放大器（OP1）的输出端c1，连接到低功率电位（GND）的集电极端子C）和连接到电阻器R2的发射极端子E的基极端子B. 高功率电位（VBH）是与发光元件的高功率电位同步的电位。输出运算放大器（OP1）的输出端子c1的电位作为缓冲器低功率电位（VBL）。低功率电位（VBL）对应于高功率电位（VBH）和高功率电位（V1）之间的电位差。因此，低功率电位（VBL）可以跟随发光元件的高功率电位的高功率电位（VBH）。

74. 发明授权

US08546161B2 Manufacturing method of thin film transistor and liquid crystal display device 有权
标题翻译：薄膜晶体管和液晶显示器件的制造方法
公开(公告)号：US08546161B2
公开(公告)日：2013-10-01
申请号：US13226822
申请日：2011-09-07
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , G02F1/13394 , G02F1/13458 , G02F1/136227 , H01L27/1248 , H01L29/41733
摘要： Etching of a semiconductor layer including a part over a gate wiring and formation of a contact hole for connection between a pixel electrode and a drain electrode are performed by one-time photolithography step and one-time etching step; thus, the number of photolithography steps is reduced. The exposed part of the gate wiring is covered by an insulating layer, and this insulating layer also functions as a spacer for maintaining a space for a liquid crystal layer. By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at lower cost and higher productivity. Using an oxide semiconductor for the semiconductor layer can realize a liquid crystal display device with low power consumption and high reliability.
摘要翻译：通过一次光刻步骤和一次蚀刻步骤进行包括栅极布线上的部分的半导体层的蚀刻和用于像素电极和漏极之间的连接的接触孔的形成; 因此，光刻步骤的数量减少。栅极布线的暴露部分被绝缘层覆盖，并且该绝缘层还用作用于保持液晶层的空间的间隔物。通过减少光刻步骤的数量，可以以更低的成本和更高的生产率提供液晶显示装置。使用半导体层的氧化物半导体可以实现低功耗，高可靠性的液晶显示装置。

75. 发明授权

US08421069B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08421069B2
公开(公告)日：2013-04-16
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

76. 发明申请

US20130069068A1 SEMICONDUCTOR DEVICE, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE 有权
公开(公告)号：US20130069068A1
公开(公告)日：2013-03-21
申请号：US13612073
申请日：2012-09-12
申请人： Hiroyuki Miyake
发明人： Hiroyuki Miyake
IPC分类号： H01L27/15 , H01L27/06
CPC分类号： H01L27/1225 , G09G3/3233 , G09G3/3275 , G09G2300/0852 , G09G2300/0861 , G09G2320/045 , H01L27/06 , H01L27/0629 , H01L27/124 , H01L27/1255 , H01L27/3241 , H01L33/62
摘要： An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

77. 发明申请

US20130063413A1 LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20130063413A1
公开(公告)日：2013-03-14
申请号：US13612035
申请日：2012-09-12
申请人： Hiroyuki Miyake
发明人： Hiroyuki Miyake
IPC分类号： G09G5/00
CPC分类号： H01L27/3262 , G09G3/32 , G09G3/3233 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0262 , G09G2320/0233
摘要： In a light-emitting device, supply of current is controlled using a transistor having a normal gate electrode (a first gate electrode) and a second gate electrode for controlling threshold voltage. The light-emitting device comprises one or more switches for selecting conduction or non-conduction between the first gate electrode and a drain terminal of the transistor. When the threshold voltage of the transistor is acquired, the first gate electrode and the drain terminal of the transistor are brought into conduction with the switch, and the threshold voltage of the transistor is shifted by controlling the potential of the second gate electrode.

78. 发明申请

US20130033475A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20130033475A1
公开(公告)日：2013-02-07
申请号：US13560133
申请日：2012-07-27
申请人： Hiroyuki Miyake
发明人： Hiroyuki Miyake
IPC分类号： G09G5/00
CPC分类号： G09G5/00 , G09G3/3241 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842
摘要： In a display device including a pixel in which a driving transistor and a light-emitting element connected to a source of the driving transistor are provided, a display defect is suppressed. Before a period in which the driving transistor supplies a current to the light-emitting element, a voltage which has substantially the same level as a voltage which is applied to one electrode and the other electrode of a capacitor is kept as a voltage between a gate and the source of the driving transistor in the period. Specifically, a node where the one electrode of the capacitor and the gate of the driving transistor are electrically connected to each other in the period is made in a floating state, and the other electrode of the capacitor and the source of the driving transistor are electrically connected to each other.
摘要翻译：在包括其中提供驱动晶体管和连接到驱动晶体管的源极的发光元件的像素的显示装置中，抑制了显示缺陷。在驱动晶体管向发光元件提供电流的时段之前，将与施加到电极的一个电极和另一个电极的电压基本相同的电压保持为栅极之间的电压和这个时期的驱动晶体管的源头。具体地说，将电容器的一个电极和驱动晶体管的栅极在该周期中彼此电连接的节点设为浮置状态，电容器的另一个电极和驱动晶体管的源极电相互连接。

79. 发明授权

US08338835B2 Display device and driving method thereof 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US08338835B2
公开(公告)日：2012-12-25
申请号：US12877567
申请日：2010-09-08
申请人： Hiroyuki Miyake
发明人： Hiroyuki Miyake
IPC分类号： H01L31/14
CPC分类号： H01L27/1255 , G09G3/325 , G09G2300/0439 , G09G2300/0819 , G09G2300/0852 , G09G2300/0866 , G09G2310/0262 , G09G2310/027 , H01L27/1266
摘要： A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal.
摘要翻译：一种显示装置，其中不仅由于阈值电压导致的电流值的变化，而且由于移动性而导致的电流值的变化也不会影响要显示的所有灰度级别的亮度。在向驱动晶体管的栅极和漏极施加初始电位后，驱动晶体管的栅极和漏极保持连接为浮置状态，并且在栅极与栅极之间的电压之前将电压保持在电容器中驱动晶体管的源极等于阈值电压。当通过从视频信号的电压中减去保持在电容器中的电压获得的电压被施加到驱动晶体管的栅极和源极时，电流被提供给发光元件。用于校正的初始电压的值根据视频信号的电压而不同。

80. 发明授权

US08330702B2 Pulse output circuit, display device, and electronic device 有权
标题翻译：脉冲输出电路，显示设备和电子设备
公开(公告)号：US08330702B2
公开(公告)日：2012-12-11
申请号：US12699929
申请日：2010-02-04
申请人： Hiroyuki Miyake , Kei Takahashi
发明人： Hiroyuki Miyake , Kei Takahashi
IPC分类号： G09G3/36
CPC分类号： H03K17/162 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0819 , G09G2310/0286 , G09G2310/0289 , G09G2320/043 , G09G2320/045 , G11C19/28 , G11C19/285 , H01L27/088 , H01L27/1288 , H01L29/04 , H01L29/78696 , H03K17/687
摘要： An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed.
摘要翻译：本发明的目的是抑制薄膜晶体管的劣化。多个脉冲输出电路各自包括第一至第十一薄膜晶体管。脉冲输出电路基于控制每个晶体管的多个时钟信号，从前一级的脉冲输出电路输入的前级信号，下一级的脉冲输出电路输入的下一级信号，和复位信号。此外，微晶半导体用作用作每个晶体管的沟道区的半导体层。因此，可以抑制晶体管的特性的劣化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式