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71. 发明授权

US07714399B2 Magnetic memory element and magnetic memory apparatus 失效
标题翻译：磁存储元件和磁存储装置
公开(公告)号：US07714399B2
公开(公告)日：2010-05-11
申请号：US11902510
申请日：2007-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi
发明人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046 , H01L43/08
摘要： A magnetic memory element includes a laminated construction of an electrode, a first pinned layer, a first intermediate layer, a first memory layer, a second intermediate layer, a second memory layer, a third intermediate layer, a second pinned layer and electrode. The magnetization direction of the first memory layer takes a first and a second directions and that of the second memory layer takes a third and a fourth directions corresponding to a value and polarity of a current between the electrodes. In response to the current, the second intermediate layer has an electric resistance higher than the first intermediate layer and than the third intermediate layer.
摘要翻译：磁存储元件包括电极，第一钉扎层，第一中间层，第一存储层，第二中间层，第二存储层，第三中间层，第二钉扎层和电极的叠层结构。第一存储层的磁化方向取第一和第二方向，而第二存储层的磁化方向取三维和四方向对应于电极之间电流的值和极性。响应于电流，第二中间层的电阻高于第一中间层，而不是第三中间层。

72. 发明申请

US20090207724A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20090207724A1
公开(公告)日：2009-08-20
申请号：US12320955
申请日：2009-02-10
申请人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
发明人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
IPC分类号： G11B3/70
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译：磁存储器设置有存储单元。存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层和磁记录层。互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。接地线相对于互连设置在与磁记录元件相对的一侧上。

73. 发明申请

US20090098412A1 Magnetic recording element, manufacturing method of the same and magnetic storage system using the same 有权
标题翻译：磁记录元件，其制造方法和使用其的磁存储系统
公开(公告)号：US20090098412A1
公开(公告)日：2009-04-16
申请号：US12285429
申请日：2008-10-03
申请人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
发明人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11B5/33
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译：磁记录元件包括具有表面和一对电极的多层。多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。第三磁性层设置在第一和第二磁性层之间。第三铁磁层的磁化方向是可变的。第一中间层设置在第一和第三磁性层之间。第二中间层设置在第二和第三磁性层之间。该对电极能够将与表面大致垂直的方向流动的电流供给到多层。在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

74. 发明授权

US07432574B2 Magnetic recording element and magnetic memory 有权
标题翻译：磁记录元件和磁存储器
公开(公告)号：US07432574B2
公开(公告)日：2008-10-07
申请号：US11725570
申请日：2007-03-20
申请人： Shiho Nakamura , Hirofumi Morise
发明人： Shiho Nakamura , Hirofumi Morise
IPC分类号： H01L29/06
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11C16/16 , H01F10/3227 , H01F10/3254 , H01F10/3286 , H01L27/222 , H01L27/228 , H01L43/08
摘要： A magnetic recording element according to an example of the present invention includes a magnetic free layer whose magnetization is variable in accordance with a current direction passing through a film and whose direction of easy axis of magnetization is a direction perpendicular to a film plane, a magnetic pinned layer whose magnetization is fixed to a direction perpendicular to the film plane, and a non-magnetic barrier layer between the magnetic free layer and the magnetic pinned layer. In the magnetic free layer, a relation between a saturated magnetization Ms (emu/cc) and an anisotropy field Han (Oe) satisfies Han>12.57 Ms, and Han
摘要翻译：根据本发明实施例的磁记录元件包括磁化自由层，其磁化根据通过膜的电流方向是可变的，并且易磁化轴方向是垂直于膜平面的方向，磁性其磁化固定到垂直于膜平面的方向上的固定层，以及在磁性自由层和磁性固定层之间的非磁性阻挡层。在磁性自由层中，饱和磁化强度Ms（emu / cc）与各向异性场Han（Oe）之间的关系满足Han> 12.57 Ms，而Han <1.2 E 7 MS -1 +12.57 女士。

75. 发明申请

US20080213627A1 Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus 有权
标题翻译：磁阻效应器件及其制造方法，磁存储器，磁头和磁记录装置
公开(公告)号：US20080213627A1
公开(公告)日：2008-09-04
申请号：US12073171
申请日：2008-02-29
申请人： Yuichi Ohsawa , Shiho Nakamura
发明人： Yuichi Ohsawa , Shiho Nakamura
IPC分类号： G11B5/39 , B32B7/04 , B32B15/04
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11C11/16 , H01L27/224 , H01L27/226 , H01L43/08 , Y10T428/1121 , Y10T428/12271
摘要： A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.
摘要翻译：磁阻效应器件包括：绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。连接部不夹在第二铁磁层和磁偏置层之间。连接部分由铁磁材料制成，并且在第一铁磁层和第二铁磁层之间电连接。一种制造磁阻效应器件的方法包括：层叠第一和第二铁磁层以夹住绝缘体层，并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。

76. 发明申请

US20080197431A1 Magnetic memory element and magnetic memory apparatus 失效
标题翻译：磁存储元件和磁存储装置
公开(公告)号：US20080197431A1
公开(公告)日：2008-08-21
申请号：US11902510
申请日：2007-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi
发明人： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046 , H01L43/08
摘要： A magnetic memory element includes a laminated construction of an electrode, a first pinned layer, a first intermediate layer, a first memory layer, a second intermediate layer, a second memory layer, a third intermediate layer, a second pinned layer and electrode. The magnetization direction of the first memory layer takes a first and a second directions and that of the second memory layer takes a third and a fourth directions corresponding to a value and polarity of a current between the electrodes. In response to the current, the second intermediate layer has an electric resistance higher than the first intermediate layer and than the third intermediate layer.
摘要翻译：磁存储元件包括电极，第一钉扎层，第一中间层，第一存储层，第二中间层，第二存储层，第三中间层，第二钉扎层和电极的叠层结构。第一存储层的磁化方向取第一和第二方向，而第二存储层的磁化方向取三维和四方向对应于电极之间电流的值和极性。响应于电流，第二中间层的电阻高于第一中间层，而不是第三中间层。

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