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71. 发明申请

US20080170377A1 MANIPULATION INPUT DEVICE AND ELECTRONIC INSTRUMENT USING THE SAME 审中-公开
标题翻译：操作输入装置和使用该装置的电子仪器
公开(公告)号：US20080170377A1
公开(公告)日：2008-07-17
申请号：US11969276
申请日：2008-01-04
申请人： Takeshi Miyasaka , Masayuki Tanaka
发明人： Takeshi Miyasaka , Masayuki Tanaka
IPC分类号： H05K7/00
CPC分类号： H01H19/005 , H01H25/041 , H01H2019/006 , H01H2025/043 , H01H2025/048
摘要： A manipulation input device includes a base, a printed-circuit board adhered to the base, a manipulation member, a pressing projection, and a manipulation dial. A plurality of push-button switches and a magnetic-field detection element are mounted on the printed-circuit board. The manipulation member has a ring-shape plate spring and a pedestal portion. The pressing projection press-contacts the push-button switch by fixing a mounting portion to an outer circumferential edge of the upper surface of the base. The pressing projection is provided toward a lower surface of the pedestal portion. The mounting portion is extended downward from an outer circumferential edge portion of the ring-shape plate spring. A ring magnet is assembled in a lower surface of the manipulation dial. N poles and S poles are alternatively arranged in the ring magnet. The manipulation dial is rotatably assembled in an upper surface of the pedestal portion.
摘要翻译：操作输入装置包括基座，粘附到基座的印刷电路板，操纵构件，按压突起和操纵拨盘。多个按钮开关和磁场检测元件安装在印刷电路板上。操作构件具有环形板簧和基座部。按压突起通过将安装部固定到基部的上表面的外周边缘而按压按钮开关。按压突起朝向基座部的下表面设置。安装部从环状板簧的外周缘部向下方延伸。环形磁铁组装在操作盘的下表面。 N极和S极交替地布置在环形磁铁中。操作盘可旋转地组装在基座部分的上表面中。

72. 发明授权

US07387934B2 Nonvolatile semiconductor memory and manufacturing method for the same 有权
标题翻译：非易失性半导体存储器及其制造方法相同
公开(公告)号：US07387934B2
公开(公告)日：2008-06-17
申请号：US11267331
申请日：2005-11-07
申请人： Yoshio Ozawa , Masayuki Tanaka , Fumitaka Arai
发明人： Yoshio Ozawa , Masayuki Tanaka , Fumitaka Arai
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： The memory cell matrix encompasses (a) a plurality device isolation films running along column direction, (b) first conductive layers arranged along row and column-directions, adjacent groups of the first conductive layers are isolated from each other by the device isolation film disposed between the adjacent groups, (c) lower inter-electrode dielectrics arranged respectively on crests of the corresponding first conductive layers, (d) an upper inter-electrode dielectric arranged on the lower inter-electrode dielectric made of insulating material different from the lower inter-electrode dielectrics, and (e) second conductive layers running along the row-direction, arranged on the upper inter-electrode dielectric.
摘要翻译：存储单元矩阵包括（a）沿着列方向延伸的多个器件隔离膜，（b）沿着行和列方向布置的第一导电层，相邻的第一导电层组通过设置隔离膜彼此隔离（c）分别布置在相应的第一导电层的顶部上的下部电极间电介质，（d）布置在由绝缘材料制成的下部电极间电介质上的上部电极间电介质， - 电极介质，和（e）布置在上部电极间电介质上的沿着行方向延伸的第二导电层。

73. 发明申请

US20070284652A1 Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20070284652A1
公开(公告)日：2007-12-13
申请号：US11783141
申请日：2007-04-06
申请人： Takuya Kobayashi , Katsuyuki Sekine , Yoshio Ozawa , Masayuki Tanaka
发明人： Takuya Kobayashi , Katsuyuki Sekine , Yoshio Ozawa , Masayuki Tanaka
IPC分类号： H01L29/792
CPC分类号： H01L29/513 , H01L29/40117 , H01L29/517
摘要： A semiconductor memory device capable of suppressing detrapping of stored charges from a charge storage dielectric is disclosed. According to one aspect of the present invention, there is provided a semiconductor memory device comprising a semiconductor substrate, a blocking dielectric disposed on the semiconductor substrate a charge storage dielectric disposed on the blocking dielectric to store holes, a hole conductive dielectric disposed on the charge storage dielectric, and a gate electrode disposed on the hole conductive dielectric.
摘要翻译：公开了能够抑制存储电荷从电荷存储电介质中去除的半导体存储器件。根据本发明的一个方面，提供了一种半导体存储器件，其包括半导体衬底，设置在半导体衬底上的阻挡电介质，设置在阻挡电介质上以存储孔的电荷存储电介质，设置在电荷上的导电电介质存储电介质和设置在导电电介质上的栅电极。

74. 发明申请

US20070215958A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070215958A1
公开(公告)日：2007-09-20
申请号：US11798593
申请日：2007-05-15
申请人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
IPC分类号： H01L29/94
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/28247 , H01L21/28518 , H01L21/3185 , H01L21/76838 , H01L21/76897 , H01L29/40117 , H01L29/513 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/792
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜，包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在下氮化硅膜比上述氮化硅膜高。

75. 发明申请

US20070134227A1 Catalyst for cleaving sugar chain 审中-公开
标题翻译：用于切割糖链的催化剂
公开(公告)号：US20070134227A1
公开(公告)日：2007-06-14
申请号：US10551550
申请日：2004-03-31
申请人： Masayuki Tanaka , Mamoru Kyogashima
发明人： Masayuki Tanaka , Mamoru Kyogashima
IPC分类号： A61K38/47 , C07H21/04 , C08B37/00 , C12N9/24 , C12P19/04 , C12P21/06
CPC分类号： C12N9/2408 , A61K38/1709
摘要： A catalyst which is capable of specifically cleaving one sugar chain or two or more sugar chains selected from the group consisting of hyaluronic acid, chondroitin sulfate A, chondroitin sulfate C and chondroitin sulfate D; a cleavage agent specific for the sugar chains; a medicament which is used for specifically cleaving the sugar chains in a living body tissue; a method for specifically cleaving the sugar chains; a method for specifically producing the sugar chain having a decreased molecular weight; and production methods for the catalyst, the cleavage agent and the medicament.
摘要翻译：一种能够特异性切割选自透明质酸，硫酸软骨素A，硫酸软骨素C和硫酸软骨素D中的一种糖链或两种或更多种糖链的催化剂; 针对糖链的切割剂; 用于特异性切割活体组织中的糖链的药物; 专门切割糖链的方法; 专门生产分子量降低的糖链的方法; 以及催化剂，裂解剂和药物的制备方法。

76. 发明授权

US07148158B2 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US07148158B2
公开(公告)日：2006-12-12
申请号：US10916500
申请日：2004-08-12
申请人： Yoshio Ozawa , Masayuki Tanaka , Kiyotaka Miyano , Shigehiko Saida
发明人： Yoshio Ozawa , Masayuki Tanaka , Kiyotaka Miyano , Shigehiko Saida
IPC分类号： H01L21/338 , H01L21/8238 , H01L21/336 , H01L21/4763 , H01L21/44
CPC分类号： H01L29/4983 , H01L29/41783 , H01L29/6656
摘要： A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.

77. 发明授权

US07060555B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07060555B2
公开(公告)日：2006-06-13
申请号：US10895144
申请日：2004-07-21
申请人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
IPC分类号： H01L21/336
CPC分类号： H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L21/76879 , H01L21/76897 , H01L23/485 , H01L27/10873 , H01L2924/0002 , H01L2924/00
摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

78. 发明授权

US07041584B2 Method of manufacturing semiconductor device and the semiconductor device 失效
公开(公告)号：US07041584B2
公开(公告)日：2006-05-09
申请号：US10867765
申请日：2004-06-16
申请人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
发明人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/324 , H01L21/335
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/32053 , H01L21/76843 , H01L21/76855 , H01L21/76864 , H01L21/76886 , H01L29/665
摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

79. 发明申请

US20050212036A1 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20050212036A1
公开(公告)日：2005-09-29
申请号：US11088947
申请日：2005-03-25
申请人： Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
发明人： Masayuki Tanaka , Yoshio Ozawa , Hirokazu Ishida , Katsuaki Natori , Seiji Inumiya
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , G11C16/0483 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/42324 , H01L29/513
摘要： A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate provided on each of the element formation regions through a first gate insulation film, a control gate provided on the floating gate through a second gate insulation film, and source/drain regions provided in the semiconductor substrate, wherein a mutual diffusion layer is provided at least at an interface between the second gate insulation film and the control gate.
摘要翻译：半导体存储器件包括半导体衬底，隔离绝缘膜，填充在形成于半导体衬底中的多个沟槽中以限定多个元件形成区域;浮置栅极，通过第一栅极绝缘膜设置在每个元件形成区域上，通过第二栅极绝缘膜设置在浮置栅极上的控制栅极和设置在半导体衬底中的源极/漏极区域，其中至少在第二栅极绝缘膜和控制栅极之间的界面处设置相互扩散层。

80. 发明授权

US06903422B2 Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems 失效
标题翻译：半导体集成电路，制造方法及半导体集成电路系统
公开(公告)号：US06903422B2
公开(公告)日：2005-06-07
申请号：US10609520
申请日：2003-07-01
申请人： Akira Goda , Mitsuhiro Noguchi , Masayuki Tanaka , Shigehiko Saida
发明人： Akira Goda , Mitsuhiro Noguchi , Masayuki Tanaka , Shigehiko Saida
IPC分类号： H01L27/10 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11546
摘要： A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.
摘要翻译：公开了一种半导体集成电路，其包括半导体衬底，形成在半导体衬底上的存储单元，并且具有堆叠结构的第一栅极绝缘层，其包括形成电荷存储层的氮化硅层，以及形成在半导体衬底并具有第二栅极绝缘层。这里，存储单元的源极和漏极扩散层被第一栅极绝缘层的一部分覆盖，并且金属硅化物层形成在晶体管的源极和漏极扩散层的表面上。

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