专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20070170536A1 Liquid phase epitaxial GOI photodiode with buried high resistivity germanium layer 审中-公开
标题翻译：液相外延GOI光电二极管，埋置高电阻率锗层
公开(公告)号：US20070170536A1
公开(公告)日：2007-07-26
申请号：US11339011
申请日：2006-01-25
申请人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
发明人： Sheng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L31/00
CPC分类号： H01L31/1055 , H01L31/1808 , H01L31/1872 , Y02E10/50
摘要： A device and associated method are provided for fabricating a liquid phase epitaxial (LPE) Germanium-on-Insulator (GOI) photodiode with buried high resistivity Germanium (Ge) layer. The method provides a silicon (Si) substrate, and forms a bottom insulator overlying the Si substrate with a Si seed access area. Then, a Ge P-I-N diode is formed with an n +-doped (n+) mesa, a p+-doped (p+) Ge bottom insulator interface and mesa lateral interface, and a high resistivity Ge layer interposed between the p+ Ge and n+ Ge. A metal electrode is formed overlying a region of the p+ Ge lateral interface, and a transparent electrode is formed overlying the n+ Ge mesa. In one aspect, the method deposits a silicon nitride layer temporary cap overlying the high resistivity Ge layer, and an annealing is performed to epitaxially crystallize the Ge bottom interface and high resistivity Ge layer.
摘要翻译：提供了一种用于制造具有埋置的高电阻率锗（Ge）层的液相外延（LPE）绝缘体锗绝缘体（GOI）光电二极管的器件和相关方法。该方法提供硅（Si）衬底，并且形成具有Si种子存取区域的覆盖Si衬底的底部绝缘体。然后，形成具有n +掺杂（n +）台面，p +掺杂（p +）Ge底部绝缘体界面和台面侧面界面的Ge P-I-N二极管，以及插入在p + Ge和n + Ge之间的高电阻率Ge层。在p + Ge侧面界面的区域上形成金属电极，形成覆盖n + Ge台面的透明电极。在一个方面，该方法沉积覆盖高电阻率Ge层的氮化硅层临时盖，并进行退火以使Ge底界面和高电阻率Ge层外延结晶。

72. 发明申请

US20070141744A1 Method of fabricating a low, dark-current germanium-on-silicon pin photo detector 有权
标题翻译：制造低，暗电流硅 - 硅引脚光电探测器的方法
公开(公告)号：US20070141744A1
公开(公告)日：2007-06-21
申请号：US11312967
申请日：2005-12-19
申请人： Jong-Jan Lee , Douglas Tweet , Jer-Shen Maa , Sheng Hsu
发明人： Jong-Jan Lee , Douglas Tweet , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/105 , H01L31/1808 , H01L31/1864 , Y02E10/50 , Y02P70/521 , Y10S438/933
摘要： A method of fabricating a low, dark-current germanium-on-silicon PIN photo detector includes preparing a P-type silicon wafer; implanting the P-type silicon wafer with boron ions; activating the boron ions to form a P+ region on the silicon wafer; forming a boron-doped germanium layer on the P+ silicon surface; depositing an intrinsic germanium layer on the born-doped germanium layer; cyclic annealing, including a relatively high temperature first anneal step and a relatively low temperature second anneal step; repeating the first and second anneal steps for about twenty cycles, thereby forcing crystal defects to the P+ germanium layer; implanting ions in the surface of germanium layer to form an N+ germanium surface layer and a PIN diode; activating the N+ germanium surface layer by thermal anneal; and completing device according to known techniques to form a low dark-current germanium-on-silicon PIN photodetector.
摘要翻译：制造低，暗电流锗硅PIN光检测器的方法包括制备P型硅晶片; 用硼离子注入P型硅晶片; 激活硼离子以在硅晶片上形成P +区; 在P +硅表面上形成硼掺杂锗层; 在天然掺杂锗层上沉积本征锗层; 循环退火，包括相对高温的第一退火步骤和相对低温的第二退火步骤; 重复第一和第二退火步骤约20个循环，由此迫使晶体缺陷到P +锗层; 在锗层表面注入离子以形成N +锗表面层和PIN二极管; 通过热退火激活N +锗表面层; 并根据已知技术完成器件以形成低暗电流锗硅PIN光电探测器。

73. 发明申请

US20070001163A1 Floating body germanium phototransistor 有权
标题翻译：浮体锗光电晶体管
公开(公告)号：US20070001163A1
公开(公告)日：2007-01-04
申请号：US11174035
申请日：2005-07-01
申请人： Jong-Jan Lee , Sheng Hsu , Jer-Shen Maa , Douglas Tweet
发明人： Jong-Jan Lee , Sheng Hsu , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L31/00
CPC分类号： H01L31/1136 , H01L31/028 , H01L31/1808 , Y02E10/547
摘要： A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.
摘要翻译：提出了一种浮体锗（Ge）光电晶体管及其制造工艺。该方法包括：提供硅（Si）衬底; 选择性地形成覆盖Si衬底的绝缘体层; 使用液相外延（LPE）工艺形成覆盖绝缘体层的外延Ge层; 在Ge层中形成沟道区; 形成覆盖所述沟道区的栅极电介质，栅电极和栅极间隔; 并且在Ge层中形成源/漏区。 LPE工艺包括用具有大于第一温度的熔化温度的材料包封Ge，并且使用低于第一温度的温度来熔化Ge。 LPE工艺包括：形成覆盖沉积Ge的介电层; 融化Ge; 并且响应于冷却Ge，将外延生长前沿从下面的Si衬底表面横向传播到Ge中。

74. 发明申请

US20060189151A1 Method for forming an infrared photodetector with a vertical optical path 审中-公开
标题翻译：用于形成具有垂直光路的红外光电探测器的方法
公开(公告)号：US20060189151A1
公开(公告)日：2006-08-24
申请号：US11384121
申请日：2006-03-17
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L31/035281 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/0265 , H01L31/101 , H01L31/1812 , Y02E10/50
摘要： Provided are a SiGe vertical optical path and a method for selectively forming a SiGe optical path normal structure for IR photodetection. The method comprises: forming a Si substrate surface; forming a Si feature, normal with respect to the Si substrate surface, such as a trench, via, or pillar; and, selectively forming a SiGe optical path overlying the Si normal feature. In some aspects, the Si substrate surface is formed a first plane and the Si normal feature has walls (sidewalls), normal with respect to the Si substrate surface, and a surface in a second plane, parallel to the first plane. Then, selectively forming a SiGe optical path overlying the Si normal feature includes forming a SiGe vertical optical path overlying the normal feature walls.
摘要翻译：提供了SiGe垂直光路和用于选择性地形成用于IR光电检测的SiGe光路法线结构的方法。该方法包括：形成Si衬底表面; 形成Si特征，相对于诸如沟槽，通孔或支柱的Si衬底表面是正常的; 并且选择性地形成覆盖Si正常特征的SiGe光路。在一些方面，Si衬底表面形成第一平面，并且Si正常特征具有相对于Si衬底表面法线的壁（侧壁）和平行于第一平面的第二平面中的表面。然后，选择性地形成覆盖Si正常特征的SiGe光路包括形成覆盖正常特征壁的SiGe垂直光路。

75. 发明申请

US20060189111A1 Method of making CMOS devices on strained silicon on glass 失效
标题翻译：在玻璃上的应变硅上制造CMOS器件的方法
公开(公告)号：US20060189111A1
公开(公告)日：2006-08-24
申请号：US11060878
申请日：2005-02-18
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Yoshi Ono , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/44
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1266 , H01L29/7842 , H01L29/78621
摘要： A method of making CMOS devices on strained silicon on glass includes preparing a glass substrate, including forming a strained silicon layer on the glass substrate; forming a silicon oxide layer by plasma oxidation of the strained silicon layer; depositing a layer of doped polysilicon on the silicon oxide layer; forming a polysilicon gate; implanting ions to form a LDD structure; depositing and forming a spacer dielectric on the gate structure; implanting and activation ions to form source and drain structures; depositing a layer of metal film; annealing the layer of metal film to form salicide on the source, drain and gate structures; removing any unreacted metal film; depositing a layer of interlayer dielectric; and forming contact holes and metallizing.
摘要翻译：在玻璃上的应变硅上制造CMOS器件的方法包括制备玻璃衬底，包括在玻璃衬底上形成应变硅层; 通过应变硅层的等离子体氧化形成氧化硅层; 在氧化硅层上沉积掺杂多晶硅层; 形成多晶硅栅极; 注入离子以形成LDD结构; 在栅极结构上沉积和形成间隔电介质; 植入和激活离子以形成源和漏结构; 沉积一层金属膜; 退火金属膜层，在源极，漏极和栅极结构上形成硅化物; 去除任何未反应的金属膜; 沉积层间电介质层; 并形成接触孔和金属化。

76. 发明申请

US20100276776A1 Germanium Film Optical Device Fabricated on a Glass Substrate 有权
标题翻译：锗薄膜光学元件制造在玻璃基板上
公开(公告)号：US20100276776A1
公开(公告)日：2010-11-04
申请号：US12434118
申请日：2009-05-01
申请人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
发明人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
IPC分类号： H01L31/028 , H01L21/02 , H01L31/0216
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L27/1469 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/351 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
摘要翻译：玻璃基板上的锗（Ge）光电二极管阵列具有相应的制造方法。提供未掺杂或轻掺杂第一掺杂剂的Ge衬底。第一掺杂剂可以是n型或p型掺杂剂。 Ge衬底的第一表面适度地掺杂有第一掺杂剂并且结合到玻璃衬底顶表面。然后，Ge衬底第二表面的第一区域被第一掺杂剂重掺杂。 Ge衬底第二表面的第二区域重掺杂有与第一掺杂剂相反的电子亲和力的第二掺杂剂，形成pn结。在Ge衬底第二表面上形成层间电介质（ILD）层，并且在覆盖Ge衬底第二表面的第一和第二区域的ILD层中蚀刻接触孔。接触孔填充有金属，并且金属垫形成在接触孔上。

77. 发明申请

US20070298588A1 Transfer method for forming a silicon-on-plastic wafer 失效
标题翻译：用于形成硅塑料晶片的转移方法
公开(公告)号：US20070298588A1
公开(公告)日：2007-12-27
申请号：US11891502
申请日：2007-08-10
申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
发明人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/301
CPC分类号： H01L21/26506 , H01L21/187 , H01L21/6835 , H01L2221/6835 , H01L2221/68368 , Y10S438/977
摘要： A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a portion of the SiGe layer; depositing a dielectric on the silicon side of the silicon-on-glass wafer; applying adhesive and bonding a plastic substrate to the silicon side of the silicon-on-glass wafer; removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and completing a desired IC device on the silicon-on-plastic. Multi-level structure may be fabricated according to the method of the invention by repeating the last few steps of the method of the invention.
摘要翻译：通过层转移制造硅塑料层的方法包括在硅衬底上沉积SiGe层; 沉积一层硅; 将氢离子注入到硅衬底中; 将玻璃基板结合到硅层; 分裂晶片; 去除所述硅层和所述SiGe层的一部分; 在玻璃上硅晶片的硅侧沉积电介质; 施加粘合剂并将塑料基板粘合到硅玻璃晶片的硅侧; 从接合的硅玻璃晶片的玻璃面上移除玻璃以形成硅 - 硅晶片; 并在塑料硅胶上完成所需的IC器件。可以通过重复本发明方法的最后几个步骤，根据本发明的方法制造多层结构。

78. 发明申请

US20070295953A1 Germanium phototransistor with floating body 有权
标题翻译：具有浮体的锗光电晶体管
公开(公告)号：US20070295953A1
公开(公告)日：2007-12-27
申请号：US11891574
申请日：2007-08-10
申请人： Jong-Jan Lee , Cheng Hsu , Jer-Shen Maa , Douglas Tweet
发明人： Jong-Jan Lee , Cheng Hsu , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L31/00
CPC分类号： H01L31/1136 , H01L31/028 , H01L31/1808 , Y02E10/547
摘要： A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.
摘要翻译：提出了一种浮体锗（Ge）光电晶体管及其制造工艺。该方法包括：提供硅（Si）衬底; 选择性地形成覆盖Si衬底的绝缘体层; 使用液相外延（LPE）工艺形成覆盖绝缘体层的外延Ge层; 在Ge层中形成沟道区; 形成覆盖所述沟道区的栅极电介质，栅电极和栅极间隔; 并且在Ge层中形成源/漏区。 LPE工艺包括用具有大于第一温度的熔化温度的材料包封Ge，并且使用低于第一温度的温度来熔化Ge。 LPE工艺包括：形成覆盖沉积Ge的介电层; 融化Ge; 并且响应于冷却Ge，将外延生长前沿从下面的Si衬底表面横向传播到Ge中。

79. 发明申请

US20070099315A1 Germanium photo detector having planar surface through germanium epitaxial overgrowth 有权
标题翻译：锗光电检测器具有通过锗外延过度生长的平面
公开(公告)号：US20070099315A1
公开(公告)日：2007-05-03
申请号：US11353802
申请日：2006-02-13
申请人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
发明人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L21/02532 , H01L21/02576 , H01L21/02647 , H01L31/105 , Y02E10/50
摘要： A method of fabricating a germanium photo detector includes preparing a silicon substrate wafer and depositing and planarizing a silicon oxide layer on the silicon substrate. Contact holes are formed in the silicon oxide layer. An N+ epitaxial germanium layer is grown on the silicon oxide layer and in the contact holes. An N+ germanium layer is formed by ELO. The structure is smoothed and thinned. An intrinsic germanium layer is grown on the N+ epitaxial germanium layer. A P+ germanium layer is formed on the intrinsic germanium layer and a silicon oxide overcoat is deposited. A window is opened through the silicon oxide overcoat to the P+ germanium layer. A layer of conductive material is deposited on the silicon oxide overcoat and in the windows therein. The conductive material is etched to form individual sensing elements.
摘要翻译：制造锗光电检测器的方法包括制备硅衬底晶片并在硅衬底上沉积并平面化氧化硅层。在氧化硅层中形成接触孔。在氧化硅层和接触孔中生长N +外延锗层。 N +锗层由ELO形成。结构平滑和变薄。内在锗层生长在N +外延锗层上。在本征锗层上形成P +锗层，并沉积氧化硅外涂层。通过氧化硅外涂层向P +锗层打开窗口。一层导电材料沉积在氧化硅外涂层和其中的窗口中。蚀刻导电材料以形成各个感测元件。

80. 发明申请

US20060172467A1 Strained silicon devices transfer to glass for display applications 失效
标题翻译：应变硅器件转移到玻璃上进行显示应用
公开(公告)号：US20060172467A1
公开(公告)日：2006-08-03
申请号：US11046411
申请日：2005-01-28
申请人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/1266 , H01L27/1203 , H01L27/1214 , H01L29/78687
摘要： A method of fabricating strained silicon devices for transfer to glass for display applications includes preparing a wafer having a silicon substrate thereon; forming a relaxed SiGe layer on the silicon substrate; forming a strained silicon layer on the relaxed SiGe layer; fabricating an IC device on the strained silicon layer; depositing a dielectric layer on the wafer to cover a gate module of the IC device; smoothing the dielectric; implanting ions to form a defect layer; cutting the wafer into individual silicon dies; preparing a glass panel and the silicon dies for bonding; bonding the silicon dies onto the glass panel to form a bonded structure; annealing the bonded structure; splitting the bonded structure along the defect layer; removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon die on the glass panel; and completing the glass panel circuitry.
摘要翻译：制造用于转移到用于显示器应用的玻璃的应变硅器件的方法包括制备其上具有硅衬底的晶片; 在硅衬底上形成松弛的SiGe层; 在松弛的SiGe层上形成应变硅层; 在应变硅层上制造IC器件; 在所述晶片上沉积介电层以覆盖所述IC器件的栅极模块; 平滑电介质; 注入离子以形成缺陷层; 将晶片切割成单独的硅模具; 制备玻璃面板和用于接合的硅模具; 将硅模具接合到玻璃面板上以形成接合结构; 退火键合结构; 沿着缺陷层分离粘结结构; 从硅衬底去除剩余的硅层并在玻璃面板上的硅晶片上松弛SiGe层; 并完成玻璃面板电路。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式