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71. 发明授权

US07431811B2 Ruthenium oxide electrodes and fabrication method thereof 失效
标题翻译：氧化钌电极及其制造方法
公开(公告)号：US07431811B2
公开(公告)日：2008-10-07
申请号：US11563132
申请日：2006-11-24
申请人： Jung-Chuan Chou , Sheng-Hung Chen
发明人： Jung-Chuan Chou , Sheng-Hung Chen
IPC分类号： C25B11/04
CPC分类号： C23C14/085 , C23C14/0036 , C23C14/584 , H01G4/008 , H01G4/33 , H01G9/058 , H01G11/46 , H01L28/65 , Y02E60/13
摘要： A ruthenium oxide electrode. The ruthenium oxide electrode includes a substrate, a ruthenium oxide film formed thereon, and a conductive wire connecting to the ruthenium oxide film. The invention also provides a method of fabricating the ruthenium oxide electrode.
摘要翻译：氧化钌电极。氧化钌电极包括基板，形成在其上的氧化钌膜和连接到氧化钌膜的导线。本发明还提供一种制造氧化钌电极的方法。

72. 发明申请

US20070227884A1 Uricase enzyme biosensors and fabrication method thereof, sensing systems and sensing circuits comprising the same 审中-公开
标题翻译：尿酶酶生物传感器及其制造方法，感测系统和包含该感光系统的感测电路
公开(公告)号：US20070227884A1
公开(公告)日：2007-10-04
申请号：US11448477
申请日：2006-06-07
申请人： Jung-Chuan Chou , Wei-Li Liao , Yu-Sheng Chen
发明人： Jung-Chuan Chou , Wei-Li Liao , Yu-Sheng Chen
IPC分类号： G01N33/487
CPC分类号： C12Q1/001 , C12Q1/005
摘要： A uricase enzyme biosensor and fabrication method thereof. The uricase enzyme biosensor includes a metal oxide semiconductor field effect transistor, a sensing unit including a substrate, a titanium dioxide film formed thereon and a uricase enzyme sensing film formed on the titanium dioxide film, and a conductive wire connecting with the metal oxide semiconductor field effect transistor and the sensing unit. The invention also provides a sensing system and a sensing circuit including the biosensor.
摘要翻译：尿酶酶生物传感器及其制造方法。尿酸酶生物传感器包括金属氧化物半导体场效应晶体管，包括基板的感测单元，形成在其上的二氧化钛膜和形成在二氧化钛膜上的尿酸酶感测膜，以及与金属氧化物半导体场效应晶体管和感测单元。本发明还提供一种感测系统和包括生物传感器的感测电路。

73. 发明授权

US07190013B2 ISFET using PbTiO3 as sensing film 失效
标题翻译：采用PbTiO3作为感应膜的ISFET
公开(公告)号：US07190013B2
公开(公告)日：2007-03-13
申请号：US10778285
申请日：2004-02-13
申请人： Jung-Chuan Chou , Wen Yuan Liu , Wen Bin Hong
发明人： Jung-Chuan Chou , Wen Yuan Liu , Wen Bin Hong
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/66545 , G01N27/414 , H01L29/49 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
摘要翻译：包含PbTiO 3 N 3薄膜作为H +传感膜的PbTiO 3 / SiO 2取向的ISFET器件，及其形成方法。通过溶胶 - 凝胶法形成PbTiO 3 N 3薄膜，其具有诸如处理温度低，易于控制膜组成并容易地涂覆在大基材上的许多优点。本发明的PbTiO 3 / SiO 2门控ISFET器件在水溶液中特别是在酸性水溶液中是高度敏感的。本ISFET的灵敏度范围为50至58mV / pH。此外，所公开的ISFET具有高线性度。因此，所公开的ISFET可用于检测流出物。

74. 发明授权

US07067343B2 ISFETs fabrication method 失效
标题翻译： ISFET制造方法
公开(公告)号：US07067343B2
公开(公告)日：2006-06-27
申请号：US11006094
申请日：2004-12-07
申请人： Jung-Chuan Chou , Zhi Jie Chen , Shih I Liu
发明人： Jung-Chuan Chou , Zhi Jie Chen , Shih I Liu
IPC分类号： H01L21/00
CPC分类号： G01N27/414
摘要： Methods for fabricating ion sensitive field effect transistors (ISFETs) with SnO2 extended gates. A SnO2 detection film is formed on a substrate by sol-gel technology to serve as an extended gate. The SnO2 detection film is electrically connected to a conductive wire, and an insulating layer is formed on the surface of the ISFET but part of the SnO2 detection film and the conductive wire are left exposed. The exposed conductive wire is electrically connected to a gate terminal of a MOS transistor.
摘要翻译：用于制造具有SnO 2扩展栅极的离子敏感场效应晶体管（ISFET）的方法。通过溶胶 - 凝胶技术在衬底上形成SnO 2检测膜以用作扩展栅极。 SnO 2检测膜电连接到导线，并且在ISFET的表面上形成绝缘层，但是SnO 2 N 2检测膜的一部分和导电电线被暴露。裸露的导线电连接到MOS晶体管的栅极端子。

75. 发明授权

US07019343B2 SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof 失效
标题翻译： SnO2 ISFET器件，制造方法及其使用的方法和装置
公开(公告)号：US07019343B2
公开(公告)日：2006-03-28
申请号：US10737836
申请日：2003-12-18
申请人： Jung-Chuan Chou , Yii Fang Wang
发明人： Jung-Chuan Chou , Yii Fang Wang
IPC分类号： H01L23/58 , H01L29/00
CPC分类号： G01N27/414 , H01L2924/0002 , H01L2924/00
摘要： A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
摘要翻译：一种SnO 2·ISFET器件及其制造方法。本发明通过溶胶 - 凝胶技术制备SnO 2 N 2作为ISFET的检测膜，以获得SnO 2 ISFET。本发明还通过电流测量系统测量不同pH和温度的电流 - 电压曲线。根据电流 - 电压曲线和温度之间的关系计算SnO 2 ISFET的温度参数。此外，针对不同pH环路的SnO 2 ISFET的不同pH和滞后宽度的SnO 2 ISFET的漂移速率由恒定的电压/电流电路计算，并且用于测量SnO 2 ISFET的栅极电压的电压 - 时间记录器。

76. 发明授权

US06867059B2 A-C:H ISFET device manufacturing method, and testing methods and apparatus thereof 失效
标题翻译： A-C：H ISFET器件制造方法及其测试方法和装置
公开(公告)号：US06867059B2
公开(公告)日：2005-03-15
申请号：US10810616
申请日：2004-03-29
申请人： Jung-Chuan Chou , Hsuan-Ming Tsai
发明人： Jung-Chuan Chou , Hsuan-Ming Tsai
IPC分类号： G01N27/00 , G01N27/414 , G01R27/00 , G01R31/02 , H01L21/00 , H01L21/04 , H01L21/66 , H01L23/58 , H01L27/14 , H01L29/772 , H01L31/00
CPC分类号： H01L29/66045 , G01N27/414 , H01L2924/0002 , H01L2924/00
摘要： An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
摘要翻译：一种a-C：H ISFET器件及其制造方法。本发明通过等离子体增强低压化学气相沉积（PE-LPCVD）制备a-C：H作为ISFET的检测膜，以获得a-C：H ISFET。本发明还通过电流测量系统测量不同pH和温度的电流 - 电压曲线。 a-C：H ISFET的温度参数根据电流 - 电压曲线和温度之间的关系计算。此外，aC：H ISFET对于不同pH环路的aC：H ISFET的不同pH和滞后宽度的漂移率由恒定电压/电流电路和电压 - 时间记录仪计算，以测量 aC：H ISFET。

77. 发明授权

US06847067B2 A-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof 失效
标题翻译： A-C：H ISFET器件，制造方法及其测试方法和装置
公开(公告)号：US06847067B2
公开(公告)日：2005-01-25
申请号：US10419735
申请日：2003-04-22
申请人： Jung-Chuan Chou , Hsuan-Ming Tsai
发明人： Jung-Chuan Chou , Hsuan-Ming Tsai
IPC分类号： G01N27/00 , G01N27/414 , G01R27/00 , G01R31/02 , H01L21/00 , H01L21/04 , H01L21/66 , H01L23/58 , H01L27/14 , H01L29/772 , H01L31/00
CPC分类号： H01L29/66045 , G01N27/414 , H01L2924/0002 , H01L2924/00
摘要： An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
摘要翻译：一种a-C：H ISFET器件及其制造方法。本发明通过等离子体增强低压化学气相沉积（PE-LPCVD）制备a-C：H作为ISFET的检测膜，以获得a-C：H ISFET。本发明还通过电流测量系统测量不同pH和温度的电流 - 电压曲线。 a-C：H ISFET的温度参数根据电流 - 电压曲线和温度之间的关系计算。此外，aC：H ISFET对于不同pH环路的aC：H ISFET的不同pH和滞后宽度的漂移率由恒定电压/电流电路和电压 - 时间记录仪计算，以测量 aC：H ISFET。

78. 发明授权

US08134357B2 Multi-electrode measuring system 失效
标题翻译：多电极测量系统
公开(公告)号：US08134357B2
公开(公告)日：2012-03-13
申请号：US12777942
申请日：2010-05-11
申请人： Jung-Chuan Chou , Wei-Chuan Chen , Cheng-Wei Chen , Chien-Cheng Chen
发明人： Jung-Chuan Chou , Wei-Chuan Chen , Cheng-Wei Chen , Chien-Cheng Chen
IPC分类号： G01R13/00
CPC分类号： G01N27/27
摘要： The invention provides a multi-electrode measuring system including a front end device which is a sensing device including a multi-electrode sensing device having a plurality of electrodes; a multi-channel fixture coupled to the multi-electrode sensing device; and a reference electrode. A back-end device as a virtual instrumentation is an electronic device including a read out circuit device coupled to the multi-channel fixture and the reference electrode for receiving each original signal from each electrode of the multi-electrode sensing device and the reference electrode determining a sample solution; a data acquisition device coupled to the read out circuit device for digitizing each original signal to form a digital signal and for array sampling; and a signal processing device coupled to the data acquisition device for processing each signal.
摘要翻译：本发明提供一种多电极测量系统，包括前端装置，其是包括具有多个电极的多电极感测装置的感测装置; 耦合到所述多电极感测装置的多通道固定装置; 和参考电极。作为虚拟仪器的后端设备是包括耦合到多通道固定装置的读出电路装置和参考电极的电子装置，用于从多电极感测装置的每个电极接收每个原始信号，并且参考电极确定样品溶液; 耦合到读出电路装置的数据采集装置，用于数字化每个原始信号以形成数字信号并进行阵列采样; 以及耦合到数据采集装置的信号处理装置，用于处理每个信号。

79. 发明申请

US20110115473A1 MULTI-ELECTRODE MEASURING SYSTEM 失效
标题翻译：多电极测量系统
公开(公告)号：US20110115473A1
公开(公告)日：2011-05-19
申请号：US12777942
申请日：2010-05-11
申请人： Jung-Chuan Chou , Wei-Chuan Chen , Cheng-Wei Chen , Chien-Cheng Chen
发明人： Jung-Chuan Chou , Wei-Chuan Chen , Cheng-Wei Chen , Chien-Cheng Chen
IPC分类号： G01R5/14
CPC分类号： G01N27/27
摘要： The invention provides a multi-electrode measuring system including a front end device which is a sensing device including a multi-electrode sensing device having a plurality of electrodes; a multi-channel fixture coupled to the multi-electrode sensing device; and a reference electrode. A back-end device as a virtual instrumentation is an electronic device including a read out circuit device coupled to the multi-channel fixture and the reference electrode for receiving each original signal from each electrode of the multi-electrode sensing device and the reference electrode determining a sample solution; a data acquisition device coupled to the read out circuit device for digitizing each original signal to form a digital signal and for array sampling; and a signal processing device coupled to the data acquisition device for processing each signal.
摘要翻译：本发明提供一种多电极测量系统，包括前端装置，其是包括具有多个电极的多电极感测装置的感测装置; 耦合到所述多电极感测装置的多通道固定装置; 和参考电极。作为虚拟仪器的后端设备是包括耦合到多通道固定装置的读出电路装置和参考电极的电子装置，用于从多电极感测装置的每个电极接收每个原始信号，并且参考电极确定样品溶液; 耦合到读出电路装置的数据采集装置，用于数字化每个原始信号以形成数字信号并进行阵列采样; 以及耦合到数据采集装置的信号处理装置，用于处理每个信号。

80. 发明授权

US07727370B2 Reference pH sensor, preparation and application thereof 失效
标题翻译：参考pH传感器，其制备和应用
公开(公告)号：US07727370B2
公开(公告)日：2010-06-01
申请号：US12397231
申请日：2009-03-03
申请人： Jung-Chuan Chou , Diing-Jia Tzeng
发明人： Jung-Chuan Chou , Diing-Jia Tzeng
IPC分类号： G01N27/26
CPC分类号： G01N27/414 , Y10T436/12
摘要： A reference pH sensor, the preparation and application thereof. The reference pH sensor is an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a solid-state conductive sensing layer on the substrate, and a polypyrrole layer on the solid-state conductive sensing layer, and a metal wire connecting the MOSFET and the sensing unit.
摘要翻译：参考pH传感器，其制备和应用。参考pH传感器是扩展栅场效应晶体管（EGFET）结构，并且在半导体衬底上包括金属氧化物半导体场效应晶体管（MOSFET），感测单元包括衬底，在衬底上的固态导电感测层，和固态导电感测层上的聚吡咯层，以及连接MOSFET和感测单元的金属线。

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