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    • 72. 发明授权
    • Sealing structure and gasket
    • 密封结构和垫片
    • US08136819B2
    • 2012-03-20
    • US12532943
    • 2008-03-12
    • Shuji YoshitsuneKiyohiro SuzukiManshu KameikeSeiji TaniHideki TanakaShin YoshidaMasanori Sudo
    • Shuji YoshitsuneKiyohiro SuzukiManshu KameikeSeiji TaniHideki TanakaShin YoshidaMasanori Sudo
    • F16J15/02
    • F16J15/061F16J15/025F16J15/106
    • There is provided a sealing structure and a gasket which can seal both of a portion where a groove for mounting the gasket is formed and a portion where a groove for mounting the gasket is not formed when the portions are connected.The gasket includes a first gasket portion 110 which has a first mounted portion 111 to be mounted in a first groove 211 to come in close contact with a bottom face 211a of the first groove 211 and which is formed in a shape along an end portion of an outer wall portion 210 and a second gasket portion 120 which has a second mounted portion 150 to be mounted in a second groove 221 near a portion connected to the first gasket portion 110 and which is formed in a shape along an end portion 220 of a partition wall 220, the second mounted portion 150 having an inclined face for coming in close contact with the inclined bottom face 221a of the second groove 221.
    • 提供了一种密封结构和垫圈,其可以密封形成用于安装垫圈的凹槽的部分和当连接部分时不形成用于安装垫圈的凹槽的部分。 垫圈包括第一垫圈部分110,其具有第一安装部分111,其被安装在第一凹槽211中以与第一凹槽211的底面211a紧密接触,并且沿第一凹槽211的端部 外壁部分210和第二垫圈部分120,其具有第二安装部分150,该第二安装部分150安装在靠近第一密封垫片部分110的部分附近的第二凹槽221中,并且沿着第一衬垫部分220的端部220形成 分隔壁220,第二安装部分150具有与第二凹槽221的倾斜底面221a紧密接触的倾斜面。
    • 80. 发明申请
    • SUBSTRATE PROCESSING APPARATUS AND ANALYSIS METHOD THEREFOR
    • 基板加工设备及其分析方法
    • US20080110233A1
    • 2008-05-15
    • US11931145
    • 2007-10-31
    • Hideki TanakaSusumu Saito
    • Hideki TanakaSusumu Saito
    • G12B13/00G01P21/00
    • H01L22/26
    • An analysis method for a substrate processing apparatus capable of accurately detecting a state in a housing chamber. Emission intensities of processing gas before being introduced into the chamber and processing gas having passed therethrough are measured before an inter-chamber part is replaced. If an emission intensity measured after the replacement coincides with that measured before the replacement, an emission intensity of the processing gas having passed through the chamber is measured, and a variation between the emission intensities of the processing gas having passed through the chamber measured before and after the replacement is calculated. After start of plasma processing on wafers, an emission intensity of the processing gas having passed through the chamber is measured and the variation is removed therefrom to calculate an emission intensity really representing a state in the chamber, thus detecting an end point of plasma processing therefrom.
    • 一种能够精确地检测收纳室内的状态的基板处理装置的分析方法。 在更换腔室间部分之前,测量在引入室内的处理气体的排放强度和处理通过其中的气体之前。 如果在更换之后测量的发射强度与更换之前测量的发射强度一致,则测量已经通过室的处理气体的发射强度,并且测量了之前经过腔室的处理气体的发射强度之间的变化, 更换后计算。 在开始对晶片进行等离子体处理之后,测量已经通过室的处理气体的发射强度,并从其中去除变化,从而计算出真实表示室内状态的发射强度,从而检测等离子体处理的终点 。