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71. 发明授权

US08563988B2 Semiconductor element and manufacturing method therefor 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US08563988B2
公开(公告)日：2013-10-22
申请号：US13878742
申请日：2011-10-27
申请人： Masao Uchida , Koutarou Tanaka
发明人： Masao Uchida , Koutarou Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/046 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： As viewed along a normal to the principal surface of a substrate 101, this semiconductor element 100 has a unit cell region 100ul and a terminal region 100f located between the unit cell region and an edge of the semiconductor element. The terminal region 100f includes a ring region 103f of a second conductivity type which is arranged in a first silicon carbide semiconductor layer 102 so as to contact with a drift region 102d. The ring region includes a high concentration ring region 103af which contacts with the surface of the first silicon carbide semiconductor layer and a low concentration ring region 103bf which contains an impurity of the second conductivity type at a lower concentration than in the high concentration ring region and of which the bottom contacts with the first silicon carbide semiconductor layer. A side surface of the high concentration ring region 103af contacts with the drift region 102d. As viewed along a normal to the principal surface of the semiconductor substrate, the high concentration ring region and the low concentration ring region are identical in contour.
摘要翻译：沿着基板101的主表面的法线观察，该半导体元件100具有位于单位电池区域和半导体元件的边缘之间的单位电池区域100ul和端子区域100f。端子区域100f包括布置在第一碳化硅半导体层102中以与漂移区域102d接触的第二导电类型的环形区域103f。环区域包括与第一碳化硅半导体层的表面接触的高浓度环区域103af以及含有比在高浓度环区域低的浓度的第二导电型杂质的低浓度环区域103bf，以及其底部与第一碳化硅半导体层接触。高浓度环区域103af的侧表面与漂移区域102d接触。沿着与半导体衬底的主表面正交的方向观察，高浓度环区域和低浓度环区域的轮廓相同。

72. 发明申请

US20120319249A1 SEMICONDUCTOR CHIP, SEMICONDUCTOR WAFER AND SEMICONDUCTOR CHIP MANUFACTURING METHOD 有权
标题翻译：半导体芯片，半导体晶片和半导体芯片制造方法
公开(公告)号：US20120319249A1
公开(公告)日：2012-12-20
申请号：US13579432
申请日：2011-05-13
申请人： Masao Uchida , Masashi Hayashi
发明人： Masao Uchida , Masashi Hayashi
IPC分类号： H01L29/04 , H01L21/78
CPC分类号： H01L29/7827 , H01L27/0207 , H01L29/045 , H01L29/66068 , H01L29/808 , H01L29/812 , H01L29/861
摘要： The semiconductor chip (18) of the present invention is a semiconductor chip (18) on which a power semiconductor device (10) is formed, and which includes a semiconductor substrate made from a hexagonal semiconductor, in which the semiconductor substrate has a shape of a rectangle on a principal surface, in which the rectangle is defined by two sides having lengths a and b equal to each other, and in which linear expansion coefficients in directions parallel to the two sides of the semiconductor substrate are equal to each other.
摘要翻译：本发明的半导体芯片（18）是形成功率半导体器件（10）的半导体芯片（18），其包括由六边形半导体制成的半导体衬底，其中半导体衬底具有在主表面上的矩形，其中矩形由具有彼此相等的长度a和b的两边限定，并且其中平行于半导体衬底的两侧的方向上的线性膨胀系数彼此相等。

73. 发明申请

US20100295062A1 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20100295062A1
公开(公告)日：2010-11-25
申请号：US12676212
申请日：2009-07-03
申请人： Masao Uchida , Masashi Hayashi , Koichi Hashimoto
发明人： Masao Uchida , Masashi Hayashi , Koichi Hashimoto
IPC分类号： H01L29/78 , H01L29/24 , H01L21/04
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region 15 of a first conductivity type defined on the surface of the semiconductor layer 10; a semiconductor region 14 of a second conductivity type, which is defined on the surface 10s of the semiconductor layer so as to surround the semiconductor region 15 of the first conductivity type; and a conductor 19 with a conductive surface 19s that contacts with the semiconductor regions 15 and 14 of the first and second conductivity types. On the surface 10s of the semiconductor layer, the semiconductor region 15 of the first conductivity type has at least one first strip portion 60 that runs along a first axis i. The width C1 of the semiconductor region 15 of the first conductivity type as measured along the first axis i is greater than the width A1 of the conductive surface 19s as measured along the first axis i. And the periphery of the conductive surface 19s crosses the at least one first strip portion 60, 61.
摘要翻译：半导体器件包括：已经形成在衬底上的包含碳化硅的半导体层; 限定在半导体层10的表面上的第一导电类型的半导体区域15; 限定在半导体层的表面10s上以包围第一导电类型的半导体区域15的第二导电类型的半导体区域14; 以及具有与第一和第二导电类型的半导体区域15和14接触的导电表面19s的导体19。在半导体层的表面10s上，第一导电类型的半导体区域15具有沿着第一轴线i延伸的至少一个第一条带部分60。沿着第一轴线i测量的第一导电类型的半导体区域15的宽度C1大于沿着第一轴线i测量的导电表面19s的宽度A1。并且导电表面19s的周边与至少一个第一条带部分60,61交叉。

74. 发明申请

US20100193800A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100193800A1
公开(公告)日：2010-08-05
申请号：US12665556
申请日：2009-05-11
申请人： Masao Uchida , Kazuya Utsunomiya , Koichi Hashimoto
发明人： Masao Uchida , Kazuya Utsunomiya , Koichi Hashimoto
IPC分类号： H01L29/24 , H01L23/52 , H01L29/772
CPC分类号： H01L29/812 , H01L23/544 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7828 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is fabricated on an off-cut semiconductor substrate 11. Each unit cell 10 thereof includes: a first semiconductor layer 12 on the surface of the substrate 11; a second semiconductor layer 16 stacked on the first semiconductor layer 12 to have an opening 16e that exposes first and second conductive regions 15 and 14 at least partially; a first conductor 19 located inside the opening 16e of the second semiconductor layer 16 and having a conductive surface 19s that contacts with the first and second conductive regions 15 and 14; and a second conductor 17 arranged on the second semiconductor layer 16 and having an opening 18e corresponding to the opening 16s of the second semiconductor layer 16. In a plane that is defined parallel to the surface of the substrate 11, the absolute value of a difference between the respective lengths of the second semiconductor layer 16 and the second conductor 18 as measured in the off-cut direction is greater than the absolute value of their difference as measured perpendicularly to the off-cut direction.
摘要翻译：半导体器件制造在截止半导体衬底11上。每个单电池10包括：在衬底11的表面上的第一半导体层12; 堆叠在第一半导体层12上以具有至少部分地暴露第一和第二导电区域15和14的开口16e的第二半导体层16; 第一导体19位于第二半导体层16的开口16e的内部，并且具有与第一和第二导电区域15和14接触的导电表面19s; 以及布置在第二半导体层16上并具有对应于第二半导体层16的开口16s的开口18e的第二导体17.在与衬底11的表面平行定义的平面中，差异的绝对值在沿切断方向测量的第二半导体层16和第二导体18的各自长度之间的距离大于垂直于偏离方向测量的它们的差的绝对值。

75. 发明申请

US20060177655A1 Polyether ester elastic fiber and fabric, clothes made by using the same 审中-公开
标题翻译：聚酯酯弹性纤维和织物，使用同样的衣服
公开(公告)号：US20060177655A1
公开(公告)日：2006-08-10
申请号：US10561155
申请日：2004-06-18
申请人： Seiji Mizohata , Shoji Makino , Shigeru Morioka , Masao Uchida , Bunsow Nagasaka
发明人： Seiji Mizohata , Shoji Makino , Shigeru Morioka , Masao Uchida , Bunsow Nagasaka
IPC分类号： D02G3/00
CPC分类号： D01F6/86 , Y10T428/2913
摘要： A polyether ester elastic fiber comprising a polyether ester elastomer containing polybutylene terephthalate as a hard segment and polyoxyethylene glycol as a soft segment and copolymerized with a specific metal organic sulfonate, having a coefficient of moisture absorption of not less than 5% at 35° C. and at a RH of 95% and a coefficient of water absorption extension of not less than 10%. The above-mentioned polyether ester elastic fiber has a good moisture-absorbing property, and is reversibly largely expanded or contracted by the absorption or release of water. Therefore, a fabric giving excellent comfortableness can be obtained from said elastic fibers, and can be recycled.
摘要翻译：一种聚醚酯弹性纤维，其包含聚对苯二甲酸丁二醇酯作为硬链段的聚醚酯弹性体，聚氧乙烯二醇作为软链段，并与特定的金属有机磺酸盐共聚，其吸湿系数在35℃下不低于5％ RH为95％，吸水系数为10％以上。上述聚醚酯弹性纤维具有良好的吸湿性，并且通过水的吸收或释放而可逆地大幅膨胀或收缩。因此，可以从所述弹性纤维获得具有优异舒适性的织物，并且可以再循环。

76. 发明授权

US5984752A Electron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathode 失效
标题翻译：电子发射阴极; 电子发射装置，平板显示器，并入其中的热电冷却装置; 以及制造电子发射阴极的方法
公开(公告)号：US5984752A
公开(公告)日：1999-11-16
申请号：US47131
申请日：1998-03-24
申请人： Hiroyoshi Tanaka , Koichi Kotera , Masao Uchida
发明人： Hiroyoshi Tanaka , Koichi Kotera , Masao Uchida
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： B82Y10/00 , H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J2329/00
摘要： An electron emission cathode includes: an n-type semiconductor film including diamond particles partially projecting from a surface of the n-type semiconductor film; and an anode opposing the n-type semiconductor film with a vacuum interposed therebetween. Electrons are emitted by applying a voltage between the anode and the n-type semiconductor film.
摘要翻译：电子发射阴极包括：n型半导体膜，包括从n型半导体膜的表面部分地突出的金刚石颗粒; 以及与之间的真空相对的n型半导体膜的阳极。通过在阳极和n型半导体膜之间施加电压来发射电子。

77. 发明授权

US4497720A Method for treating metallic or ceramic surfaces at high temperatures 失效
标题翻译：在高温下处理金属或陶瓷表面的方法
公开(公告)号：US4497720A
公开(公告)日：1985-02-05
申请号：US526586
申请日：1983-08-26
申请人： Hiroyuki Moriga , Masao Uchida , Koichi Iwashita , Shuji Tanaka
发明人： Hiroyuki Moriga , Masao Uchida , Koichi Iwashita , Shuji Tanaka
IPC分类号： B29C33/60 , C10M169/04 , D02G1/02 , D02J13/00 , D06M13/148 , D06M13/256 , D06M13/292 , C10M1/30
CPC分类号： D06M13/292 , B29C33/60 , C10M169/04 , D02G1/026 , D02J13/003 , D06M13/148 , D06M13/256 , D06M7/00 , C10M2209/1033 , C10M2209/104 , C10M2209/1045 , C10M2209/105 , C10M2209/1055 , C10M2209/1065 , C10M2209/107 , C10M2209/1075 , C10M2209/1085 , C10M2209/1095 , C10M2211/044 , C10M2211/06 , C10M2213/02 , C10M2213/04 , C10M2213/062 , C10M2215/04 , C10M2215/042 , C10M2215/08 , C10M2215/082 , C10M2215/26 , C10M2215/28 , C10M2217/046 , C10M2217/06 , C10M2219/04 , C10M2219/042 , C10M2219/044 , C10M2223/02 , C10M2223/04 , C10M2223/042 , C10M2223/049 , C10M2223/10 , C10M2225/00 , C10M2225/02 , C10N2240/40 , D06M2200/40
摘要： A novel method is provided for treating metallic or ceramic surfaces (hot plates, metallic molds and the like) at a high temperature of 200.degree. C. or above, wherein organic treating agents (finishes, release agents and the like) will not form a tar or sludge. According to this method, the continuous operation can be conducted due to neither staining on the metallic surfaces nor stop of the machine for a heater cleaning. Examples of the organic treating agents to be used include a polyalkylene glycol thermally decomposable at 150.degree. C. or above in air and a fluorine-containing compound, preferably the nonionic type, having a fluoroalkyl group in the molecule.
摘要翻译：提供了一种在200℃以上的高温下处理金属或陶瓷表面（热板，金属模具等）的新方法，其中有机处理剂（表面处理剂，脱模剂等）不会形成焦油或污泥。根据这种方法，由于金属表面上既不污染也不会停止加热器清洗机器，所以可进行连续操作。所使用的有机处理剂的实例包括在空气中150℃或以上可热分解的聚亚烷基二醇和在分子中具有氟代烷基的含氟化合物，优选非离子型化合物。

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