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71. 发明申请

US20170110608A1 QUANTUM DOT IMAGE SENSOR 有权
公开(公告)号：US20170110608A1
公开(公告)日：2017-04-20
申请号：US14882832
申请日：2015-10-14
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Dajiang Yang , Gang Chen , Duli Mao , Dyson H. Tai
IPC分类号： H01L31/0352 , H04N5/369 , H04N9/04 , H04N9/73 , H01L31/032 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/1461 , H01L27/14627 , H01L27/1463
摘要： A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.

72. 发明授权

US09472587B2 Storage transistor with optical isolation 有权
标题翻译：具有光隔离功能的存储晶体管
公开(公告)号：US09472587B2
公开(公告)日：2016-10-18
申请号：US14606416
申请日：2015-01-27
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Yuanwei Zheng , Xianmin Yi , Gang Chen , Duli Mao , Dyson H. Tai
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14612 , H01L27/14629 , H01L27/14643
摘要： A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.
摘要翻译：具有存储区域的存储晶体管设置在半导体材料中。栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。光学隔离结构也邻接栅电极的周边并与栅电极接触。封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

73. 发明授权

US09455291B2 Blue enhanced image sensor 有权
标题翻译：蓝色增强图像传感器
公开(公告)号：US09455291B2
公开(公告)日：2016-09-27
申请号：US14601010
申请日：2015-01-20
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Duli Mao , Yuanwei Zheng , Chih-Wei Hsiung , Arvind Kumar , Dyson H. Tai
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/14612 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14647
摘要： A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.
摘要翻译：背面照明图像传感器包括具有前侧和后侧的半导体材料。半导体材料设置在图像传感器电路和滤光器阵列之间。图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。第二掺杂区域与第一掺杂区域电隔离。具有第三掺杂区域的第二像素也包括在图像传感器中。第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

74. 发明授权

US09419044B2 Image sensor pixel having storage gate implant with gradient profile 有权
标题翻译：图像传感器像素，具有具有梯度轮廓的存储栅极注入
公开(公告)号：US09419044B2
公开(公告)日：2016-08-16
申请号：US14255535
申请日：2014-04-17
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Dajiang Yang , Gang Chen , Zhenhong Fu , Duli Mao , Eric A. G. Webster , Sing-Chung Hu , Dyson H. Tai
IPC分类号： H01L27/00 , H01J40/14 , H01L27/146 , H01L21/00 , H01L31/18 , H01L27/148
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14614 , H01L27/14689
摘要： A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
摘要翻译：像素单元包括设置在半导体衬底中的存储晶体管。存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。转移晶体管包括设置在半导体衬底上的转移栅极。输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。输出晶体管包括设置在半导体衬底上的输出门。

75. 发明申请

US20160218132A1 STORAGE TRANSISTOR WITH OPTICAL ISOLATION 有权
标题翻译：具有光隔离的存储晶体管
公开(公告)号：US20160218132A1
公开(公告)日：2016-07-28
申请号：US14606416
申请日：2015-01-27
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Yuanwei Zheng , Xianmin Yi , Gang Chen , Duli Mao , Dyson H. Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14612 , H01L27/14629 , H01L27/14643
摘要： A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.
摘要翻译：具有存储区域的存储晶体管设置在半导体材料中。栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。光学隔离结构也邻接栅电极的周边并与栅电极接触。封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

76. 发明申请

US20160086999A1 HIGH NEAR INFRARED SENSITIVITY IMAGE SENSOR 有权
标题翻译：高附近的红外灵敏度图像传感器
公开(公告)号：US20160086999A1
公开(公告)日：2016-03-24
申请号：US14494960
申请日：2014-09-24
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Duli Mao , Vincent Venezia , Gang Chen , Dajiang Yang , Dyson H. Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14649 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14685 , H01L27/14689
摘要： An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.
摘要翻译：图像传感器包括靠近第一半导体层的前侧设置的多个光电二极管，以响应于被引导到第一半导体层的前侧的光积累图像电荷。多个钉扎孔设置在第一半导体层中。钉扎井分离包括在多个光电二极管中的各个光电二极管。多个介电层设置在第一半导体层的背面附近。电介质层被调谐，使得具有基本上等于包含在第一半导体层的前端的光的第一波长的波长的光从电介质层反射回多个光电二极管中相应的一个设置在接近第一半导体层的前方。

77. 发明申请

US20150303235A1 IMAGE SENSOR PIXEL HAVING STORAGE GATE IMPLANT WITH GRADIENT PROFILE 有权
标题翻译：具有梯级轮廓的储存盖植入物的图像传感器像素
公开(公告)号：US20150303235A1
公开(公告)日：2015-10-22
申请号：US14255535
申请日：2014-04-17
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Dajiang Yang , Gang Chen , Zhenhong Fu , Duli Mao , Eric A. G. Webster , Sing-Chung Hu , Dyson H. Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14614 , H01L27/14689
摘要： A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
摘要翻译：像素单元包括设置在半导体衬底中的存储晶体管。存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。转移晶体管包括设置在半导体衬底上的转移栅极。输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。输出晶体管包括设置在半导体衬底上的输出门。

78. 发明申请

US20150271377A1 COLOR IMAGE SENSOR WITH METAL MESH TO DETECT INFRARED LIGHT 有权
标题翻译：具有金属网的彩色图像传感器以检测红外光
公开(公告)号：US20150271377A1
公开(公告)日：2015-09-24
申请号：US14222901
申请日：2014-03-24
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Jin Li , Yin Qian , Gang Chen , Dyson H. Tai
IPC分类号： H04N5/232 , H04N5/372
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/14649
摘要： An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.
摘要翻译：图像传感器包括具有布置在半导体层中的多个像素的像素阵列。包括多个滤光器组的滤色器阵列设置在像素阵列上。每个滤光器光耦合到多个像素中的对应的一个。多个分组滤波器中的每一个分别包括具有第一，第二，第二和第三颜色的第一，第二，第三和第四滤波器。金属层设置在像素阵列上方并且被图案化以包括具有尺寸和间距的网孔的金属网，以阻挡具有第四颜色的入射光到达相应的像素。金属层被图案化以包括没有金属网的开口，以允许入射光到达其它像素。

79. 发明申请

US20150270302A1 IMAGE SENSOR HAVING A GAPLESS MICROLENSES 有权
标题翻译：具有无接触微孔的图像传感器
公开(公告)号：US20150270302A1
公开(公告)日：2015-09-24
申请号：US14222833
申请日：2014-03-24
申请人： Omnivision Technologies, Inc.
发明人： Jin Li , Yin Qian , Gang Chen , Dyson H. Tai , Dajiang Yang
IPC分类号： H01L27/146 , G02B13/00
CPC分类号： H01L27/14627 , G02B13/0015 , H01L27/14643
摘要： An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.
摘要翻译：图像传感器包括布置在半导体衬底中的多个感光器件。平面层设置在半导体衬底中的多个光敏器件上。由透镜材料构成的多个第一微透镜布置在平面层上的第一透镜区域中。由透镜材料构成的多个透镜屏障布置在平面层上以提供在平面层上限定第二透镜区域的边界。由透镜材料构成的多个第二微透镜形成在由平面层上限定第二透镜区域的多个透镜屏障提供的边界内。在多个第二微透镜的回流处理之后，多个透镜屏障与相应的第二微透镜集成。

80. 发明申请

US20150097213A1 IMAGE SENSOR AND PIXELS INCLUDING VERTICAL OVERFLOW DRAIN 审中-公开
标题翻译：图像传感器和像素包括垂直溢流漏斗
公开(公告)号：US20150097213A1
公开(公告)日：2015-04-09
申请号：US14046645
申请日：2013-10-04
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Duli Mao , Dyson H. Tai
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/1464 , H01L27/14645 , H01L27/14656 , H01L27/14685
摘要： Embodiments of an apparatus comprising a pixel array including a plurality of pixels formed in a substrate having a front surface and a back surface, each pixel including a photosensitive region formed at or near the front surface and extending into the substrate a selected depth from the front surface. A filter array is coupled to the pixel array, the filter array including a plurality of individual filters each optically coupled to a corresponding photosensitive region, and a vertical overflow drain (VOD) is positioned in the substrate between the back surface and the photosensitive region of at least one pixel in the array.
摘要翻译：一种装置的实施例，包括像素阵列，该像素阵列包括形成在具有前表面和后表面的衬底中的多个像素，每个像素包括形成在前表面处或附近的感光区域，并从前面延伸到选定的深度表面。滤波器阵列耦合到像素阵列，滤光器阵列包括多个单独的滤光器，每个滤光器光学耦合到相应的感光区域，垂直溢流漏极（VOD）位于基板的背面和感光区域之间阵列中至少有一个像素。

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