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    • 71. 发明申请
    • Color image coding using inter-color correlation
    • 彩色图像编码采用色间相关
    • US20080085058A1
    • 2008-04-10
    • US11543576
    • 2006-10-05
    • Hua CaiJiang Li
    • Hua CaiJiang Li
    • G06K9/00G06K9/36G06K9/46
    • H04N19/182H04N19/13H04N19/136H04N19/186H04N19/593
    • Described is an image compression technology by which a coefficient representative of a chrominance component corresponding to an (x, y) coordinate pair is coded into a symbol, along with plurality of context events associated with that symbol, to facilitate more efficient context-based arithmetic coding. For example, four context events may be generated, including one context event based on the corresponding (x, y) coefficient value in the luminance component, and three context events based on other luminance coefficients that have adjacent horizontal, vertical and diagonal relationships with the corresponding luminance component's coefficient, respectively. In one example implementation, coding the chrominance coefficient and computing the plurality of context events occurs in a zero coding pass of an entropy coder. A sign coding pass and a magnitude refinement pass may be performed to obtain further symbols for the context-based arithmetic coding.
    • 描述了一种图像压缩技术,通过该技术,表示对应于(x,y)坐标对的色度分量的系数与多个与该符号相关联的上下文事件一起编码为符号,以促进更有效的基于上下文的算术 编码。 例如,可以生成四个上下文事件,包括基于亮度分量中的对应(x,y)系数值的一个上下文事件,以及基于与其相关的其他亮度系数的三个上下文事件,这些亮度系数与 分别对应亮度分量系数。 在一个示例实现中,对色度系数进行编码并计算多个上下文事件发生在熵编码器的零编码遍中。 可以执行符号编码遍和幅度细化遍以获得用于基于上下文的算术编码的另外的符号。
    • 73. 发明申请
    • Motor drive control
    • 电机驱动控制
    • US20070290640A1
    • 2007-12-20
    • US11784505
    • 2007-04-06
    • Connel WilliamsJiang Li
    • Connel WilliamsJiang Li
    • H02P1/18
    • H02P6/00H02M7/5387H02M2001/0009H02P6/28
    • A drive system for a multi-phase brushless motor comprises a single current sensor drive circuit, including switch means 16, switchable between a plurality of states. A controller is arranged to provide pulse width modulated drive signals to control the switch means 16 so as to control the time that the drive circuit switches between said states in each of a series of pulse width modulation periods, and to: determine a demanded voltage parameter set, identify PWM periods during which the demanded voltage parameter set is such that neither two nominal corresponding state times, nor a higher number of equivalent state times producing the same net voltage, in a single PWM period, would allow a predetermined minimum time to be spent in a predetermined number of active states sufficient for current sensing. For such PWM periods, modified state times are calculated that do allow sufficient time to be spent in a sufficient number of active states for the current in each of the phases to be determined by means of the current sensor 24.
    • 用于多相无刷电动机的驱动系统包括单个电流传感器驱动电路,包括可在多个状态之间切换的开关装置16。 控制器被布置成提供脉冲宽度调制的驱动信号以控制开关装置16,以便控制驱动电路在一系列脉冲宽度调制周期中的每一个中在所述状态之间切换的时间,并且:确定所需的电压参数 设置,识别所需电压参数组的PWM周期,使得在单个PWM周期内两个标称对应状态时间和产生相同净电压的较高数量的等效状态时间都不会使预定的最小时间成为 花费在足以进行电流感测的预定数量的活动状态。 对于这样的PWM周期,计算修改的状态时间,其允许足够的时间花费在用于通过电流传感器24确定的每个相位中的电流的足够数量的有效状态。
    • 74. 发明申请
    • GaN SEMICONDUCTOR DEVICE
    • GaN半导体器件
    • US20070210335A1
    • 2007-09-13
    • US11568348
    • 2005-05-02
    • Nariaki IkedaJiang LiSeikoh Yoshida
    • Nariaki IkedaJiang LiSeikoh Yoshida
    • H01L29/47
    • H01L29/7787H01L29/2003
    • A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in withstand voltage characteristic, said GaN semiconductor device having a structure being provided with a III-V nitride semiconductor layer containing at least one hetero junction structure of III-V nitride semiconductors having different band gap energies; a first anode electrode arranged on a surface of said III-V nitride semiconductor by Schottky junction; a second anode electrode which is arranged on the surface of said III-V nitride semiconductor layer by Schottky junction, is electrically connected with said first anode electrode and forms a higher Schottky barrier than a Schottky barrier formed by said first anode electrode; and an insulating protection film which is brought into contact with said second anode electrode and is arranged on the surface of said III-V nitride semiconductor layer.
    • 具有低导通电阻的GaN半导体器件在施加反向偏置电压时具有非常小的漏电流并且具有非常优异的耐电压特性,所述GaN半导体器件具有设置有III-V族氮化物半导体 含有具有不同带隙能量的III-V族氮化物半导体的至少一种异质结结构的层; 通过肖特基结布置在所述III-V族氮化物半导体的表面上的第一阳极电极; 通过肖特基结布置在所述III-V族氮化物半导体层的表面上的第二阳极电极与所述第一阳极电连接,并形成比由所述第一阳极形成的肖特基势垒更高的肖特基势垒; 以及与所述第二阳极电极接触并设置在所述III-V族氮化物半导体层的表面上的绝缘保护膜。
    • 76. 发明申请
    • Layer-based context quantization with context partitioning
    • 基于层次的上下文量化与上下文分区
    • US20070122046A1
    • 2007-05-31
    • US11287054
    • 2005-11-25
    • Hua CaiJiang Li
    • Hua CaiJiang Li
    • G06K9/36
    • H04N19/91H04N19/13H04N19/196H04N19/30H04N19/46H04N19/463H04N19/60H04N19/63
    • Conditioning states are selected for coding a source from a plurality of potential conditioning states. The potential conditioning states represent a series of context events, such as a plurality of binary context events. According to a rule, potential conditioning states are partitioned into groups, such as by partitioning the potential conditioning states according to the number or significant context events in each of the conditioning states. The conditioning states within each of the groups are then collected into layers, and then the conditioning states in the layer are quantized to form a next layer of collective conditioning states. Coding efficiency indicators, such as context quantization efficiencies, are calculated for each of the layers. Based on the context quantization efficiencies, layers in each of the groups are selected for use in a context model for coding the source.
    • 选择调节状态用于从多个潜在调节状态对源编码。 潜在的调理状态表示一系列的上下文事件,诸如多个二进制上下文事件。 根据规则,潜在的调理状态被划分成组,例如通过根据每个调节状态中的数量或重要的上下文事件划分潜在的调节状态。 然后将每个组内的调理状态收集到层中,然后将层中的调节状态量化以形成下一层的集体调理状态。 为每个层计算编码效率指标,例如上下文量化效率。 基于上下文量化效率,选择每个组中的层用于用于对源编码的上下文模型。
    • 79. 发明申请
    • Silica-containing nucleating agent compositions and methods for using such compositions in polyolefins
    • 含硅的成核剂组合物和在聚烯烃中使用这些组合物的方法
    • US20070060696A1
    • 2007-03-15
    • US11224455
    • 2005-09-12
    • Jiang LiJiannong XuMichael Mannion
    • Jiang LiJiannong XuMichael Mannion
    • C08K3/34C04B40/00
    • C08K5/1575
    • Diacetals of sorbitols and xylitols are employed in polyolefins as nucleating agents. Diacetals of sorbitols and xylitol nucleating agents may be provided in granular or powder form from hoppers or mixing equipment into polyolefins during the formation of polymeric compositions and polymeric articles. Flow of diacetals of sorbitols and xylitols is improved by the use of certain silicas, in certain defined weight percentages. Submicron size range silica compounds may provide excellent flow enhancement properties when blended and used with diacetals of sorbitols and xylitols powder compounds. A hydrophobic silica mixed with diacetals of sorbitols and xylitols compounds also may provide enhanced flow properties for such mixture, as compared to mixtures using hydrophilic silica. Loading ranges of silica may be important in improving the flow of diacetals of sorbitols and xylitols compounds.
    • 山梨糖醇和木糖醇的二缩醛用作聚烯烃作为成核剂。 山梨糖醇和木糖醇成核剂的二缩醛可以在形成聚合物组合物和聚合物制品期间以颗粒或粉末形式从料斗或混合设备提供到聚烯烃中。 通过使用某些确定的重量百分比的某些二氧化硅,改善了山梨糖醇和木糖醇的二缩醛的流动。 亚微米尺寸范围的二氧化硅化合物可以在与山梨糖醇和木糖醇粉末化合物的二缩醛混合并使用时提供优异的流动增强性能。 与使用亲水性二氧化硅的混合物相比,与二缩醛山梨糖醇和木糖醇化合物混合的疏水性二氧化硅也可以为这种混合物提供增强的流动性质。 二氧化硅的负载范围在改善山梨糖醇和木糖醇化合物的二缩醛的流动中可能是重要的。
    • 80. 发明授权
    • Method and system for applying testing voltage signal
    • 应用测试电压信号的方法和系统
    • US07073104B1
    • 2006-07-04
    • US10384856
    • 2003-03-10
    • Jiang LiRichard FastowSteve Tam
    • Jiang LiRichard FastowSteve Tam
    • G11C29/00
    • G11C29/12G11C16/04G11C29/12005G11C29/50004G11C2029/1202
    • In a method and system for applying a testing voltage signal, a voltage source generates the testing voltage signal that ramps from an initial voltage to an intermediate voltage with a first ramping rate. In addition, the testing voltage then ramps from the intermediate voltage to an end voltage with a second ramping rate, with the first ramping rate being greater than the second ramping rate. The present invention may be applied to particular advantage when the testing voltage signal is applied on a control gate of a flash memory cell for channel erasure of the flash memory cell. In this manner, the testing voltage signal ramps to the end voltage with reduced time for minimizing testing time.
    • 在用于施加测试电压信号的方法和系统中,电压源产生以初始电压向第一斜坡率的中间电压斜坡的测试电压信号。 此外,测试电压然后以第二斜坡率从中间电压斜坡到终止电压,其中第一斜坡率大于第二斜坡率。 当测试电压信号被施加在闪速存储器单元的控制栅上用于闪存单元的通道擦除时,本发明可以被应用于特别的优点。 以这种方式,测试电压信号以缩短的时间斜坡到终端电压,以最小化测试时间。