专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US5986625A Application specific field emission display including extended emitters 失效
标题翻译：特殊应用场发射显示器，包括扩展发射器
公开(公告)号：US5986625A
公开(公告)日：1999-11-16
申请号：US779616
申请日：1997-01-07
申请人： Karen Huang , Christophe Pierrat
发明人： Karen Huang , Christophe Pierrat
IPC分类号： G09G3/22 , H01J3/02 , H01J31/12
CPC分类号： H01J3/022 , H01J31/127 , G09G3/22
摘要： An application specific field emission display includes one or more extended emitters. The emitters are patterned according to a selected image where the selected image depends upon the application. In one embodiment, an emitter is patterned in a serpentine pattern to provide a single block of illumination. In another application, emitters are grouped in threes and the emitters are driven respectively by the red, green, and blue components of an image signal to produce a multicolor display. In a display assembly according to the invention, application specific emitters are incorporated in subdisplays on a common substrate with a conventional matrix addressable array. The array provides video, graphical or textual information and the subdisplays provide textual, fixed-shaped graphical, numerical or colorized information.
摘要翻译：应用专用场发射显示器包括一个或多个扩展发射器。发射器根据所选择的图像被图案化，其中所选择的图像取决于应用。在一个实施例中，以蛇形图案将发射器图案化以提供单个照明块。在另一个应用中，发射器被分组为三分之一，并且发射器分别由图像信号的红色，绿色和蓝色分量驱动以产生多色显示。在根据本发明的显示组件中，应用特定的发射器被并入具有常规矩阵可寻址阵列的公共衬底上的子显示中。该阵列提供视频，图形或文本信息，子显示提供文本，固定形状的图形，数字或着色信息。

72. 发明授权

US5922497A Lithographic imaging system 失效
标题翻译：平版影像系统
公开(公告)号：US5922497A
公开(公告)日：1999-07-13
申请号：US6236
申请日：1998-01-13
申请人： Christophe Pierrat
发明人： Christophe Pierrat
IPC分类号： G03F1/52 , G03F1/62 , G03F9/00
CPC分类号： G03F1/52 , G03F1/62
摘要： A layer applied over the reticle used in a lithographic system can improve the image quality of the system. The applied layer may have a thickness of approximately the wavelength of incident light divided by four times its index of refraction.
摘要翻译：施加在光刻系统中使用的掩模版上的层可以提高系统的图像质量。施加的层可以具有近似于入射光的波长的倍数除以其折射率的四倍的厚度。

73. 发明授权

US5851734A Process for defining resist patterns 失效
标题翻译：用于定义抗蚀剂图案的方法
公开(公告)号：US5851734A
公开(公告)日：1998-12-22
申请号：US626666
申请日：1996-03-26
申请人： Christophe Pierrat
发明人： Christophe Pierrat
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/2022
摘要： A process for forming patterns in resist material on a semiconductor wafer that uses two masks to define a pattern instead of a single conventional mask to define the pattern. The present invention realizes better process latitude and resolution for a given feature size than did the prior art.
摘要翻译：用于在半导体晶片上形成抗蚀剂材料中的图案的方法，其使用两个掩模来限定图案而不是单个常规掩模来限定图案。对于给定的特征尺寸，本发明实现了比现有技术更好的工艺纬度和分辨率。

74. 发明授权

US5801954A Process for designing and checking a mask layout 失效
标题翻译：用于设计和检查蒙版布局的过程
公开(公告)号：US5801954A
公开(公告)日：1998-09-01
申请号：US637307
申请日：1996-04-24
申请人： Chin Aik Le , Christophe Pierrat
发明人： Chin Aik Le , Christophe Pierrat
IPC分类号： G01N21/956 , G03F1/00 , G06F17/50
CPC分类号： G06F17/5081 , G01N2021/95676 , G01N21/956
摘要： A process for designing and checking a mask layout is provided. A mask layout is generated from a binary mask layout design. An aerial image of the mask layout is then calculated using simulation software. The simulated aerial image is then compared to the binary mask layout design and modifications are made to the mask layout if necessary.
摘要翻译：提供了一种用于设计和检查掩模布局的过程。从二进制掩码布局设计生成掩码布局。然后使用模拟软件计算掩模布局的空中图像。然后将模拟的航空图像与二进制掩模布局设计进行比较，如果需要，对掩模布局进行修改。

75. 发明授权

US5695896A Process for fabricating a phase shifting mask 失效
标题翻译：制造相移掩模的工艺
公开(公告)号：US5695896A
公开(公告)日：1997-12-09
申请号：US566857
申请日：1995-12-04
申请人： Christophe Pierrat
发明人： Christophe Pierrat
IPC分类号： G03F1/00 , G03F1/30 , G03F1/72 , G03F9/00
CPC分类号： G03F1/30
摘要： A simplified process for forming a phase shifting mask is disclosed. A chrome layer is formed on a transparent substrate and patterned. A resist layer is patterned to define the phase shifting areas and the substrate is dry etched to a first predetermined depth, stripped and cleaned. Another resist layer is patterned to define the phase shifting areas and the substrate is dry etched a second predetermined depth, stripped and cleaned. A further resist layer is patterned to define the phase shifting areas and the substrate is wet etched a third predetermined depth, stripped and cleaned. The sum of the three predetermined depths is such that it corresponds to a 180.degree. phase shift of light passing through the substrate. The third predetermined depth is at least about one third of the total depth.
摘要翻译：公开了一种用于形成相移掩模的简化过程。在透明基板上形成铬层并图案化。将抗蚀剂层图案化以限定相移区域，并且将基底干蚀刻至第一预定深度，剥离并清洁。将另一抗蚀剂层图案化以限定相移区域，并将基底干蚀刻第二预定深度，剥离并清洁。将另一抗蚀剂层图案化以限定相移区域，并且将基底湿式蚀刻第三预定深度，剥离并清洁。三个预定深度的总和使得其对应于通过基板的光的180°相移。第三预定深度是总深度的至少约三分之一。

76. 发明授权

US5405721A Phase-shifting lithographic masks having phase-shifting layers of differing compositions 失效
标题翻译：具有不同组成的相移层的相移光刻掩模
公开(公告)号：US5405721A
公开(公告)日：1995-04-11
申请号：US164735
申请日：1993-12-08
申请人： Christophe Pierrat
发明人： Christophe Pierrat
IPC分类号： G03F1/26 , G03F1/30 , G03F1/72 , H01L21/027 , G03C5/00
CPC分类号： G03F1/72 , G03F1/26 , G03F1/30
摘要： A phase-shifting lithographic mask, for use in conjunction with optical radiation of wavelength .lambda., has a transparent substrate upon which are successively located a bottom (2m+1).pi. radian phase-shifting layer and a patterned top (2n+1).pi. radian phase-shifting layer each having at least approximately the same refractive index at the wavelength .lambda. as that of the substrate. A more finely patterned, opaque chromium layer is located on the patterned top phase-shifting layer. The bottom phase-shifting layer is chemically different from both the substrate and the top layer, in order to provide either etch-stopping or end-point etch detection during subsequent dry ion beam millings--as with gallium ions--of either or both of the layers, for the purpose of mask repair. For example, the substrate is quartz (silicon dioxide), the bottom phase-shifting layer is calcium fluoride, and the top phase-shifting layer is silicon dioxide. Remnants of the gallium then can be removed from both the exposed portions of the substrate and of the bottom layer--by means of successive etchings, for example, with HF and HCl, respectively, for respective prescribed time intervals having a ratio such that the relative phase shifts of the substrate and both phase-shifting layers are not disturbed by the respective etchings.
摘要翻译：与波长λ的光学辐射结合使用的相移光刻掩模具有透明衬底，其上依次位于底部（2m + 1）pi弧移相层和图案化顶部（2n + 1）pi 弧度相移层，其每个在波长λ至少大致相同的折射率。更精细图案化的不透明铬层位于图案化的顶部移相层上。底部相移层在化学上不同于基底和顶层，以便在随后的干离子束研磨期间提供蚀刻停止或终点蚀刻检测（如镓离子），其中任一个或两个层，用于面具修复的目的。例如，基板为石英（二氧化硅），底部移相层为氟化钙，顶部移相层为二氧化硅。然后可以从衬底和底层的暴露部分中除去镓的残余物 - 通过例如分别用HF和HCl进行相继的蚀刻，分别具有使相对于基板和两个移相层的相移不会被相应的蚀刻所扰乱。

77. 发明授权

US5338626A Fabrication of phase-shifting lithographic masks 失效
标题翻译：相移光刻掩模的制作
公开(公告)号：US5338626A
公开(公告)日：1994-08-16
申请号：US982270
申请日：1992-11-25
申请人： Joseph G. Garofalo , Robert L. Kostelak, Jr. , Christophe Pierrat , Sheila Vaidya
发明人： Joseph G. Garofalo , Robert L. Kostelak, Jr. , Christophe Pierrat , Sheila Vaidya
IPC分类号： G03F1/30 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F7/2022
摘要： A phase-shifting lithographic mask is fabricated, in one embodiment, by using a resist layer that is negative tone with respect to a (patterned) electron beam and is positive tone with respect to a (flood) mid-ultraviolet beam, with the tone of the electron beam predominating over that of the mid-ultraviolet beam. The resist layer is spun on a body comprising a patterned metallic layer located on a (transparent) quartz slab. The body is subjected from below to a flood mid-ultraviolet beam and from above to a patterned electron beam whose edges are located somewhere in the midst of the patterned opaque layer but are not coincident with any edges of the patterned opaque layer. Thus, a subsequent development of the resist layer removes those regions and only those regions of the resist layer upon which the ultraviolet beam was incident--i.e., not in the shadows cast by the patterned opaque layer--in the absence of incidence of the patterned electron beam. Then, an anisotropic etching removes to a prescribed depth the portions of the (transparent) substrate not covered by the remaining (patterned) resist layer. In other embodiments, the (patterned) electron beam is replaced by a (patterned) deep ultraviolet beam. In still other embodiments the same radiation (wavelength) can be used for the patterned beam as for the flood radiation in conjunction with a resist layer whose tone can be reversed by an intermediate processing step between irradiations with the patterned and flood beams, respectively.
摘要翻译：在一个实施例中，通过使用相对于（图案化）电子束为负色调的抗蚀剂层，并且相对于（泛光）中紫外光束为正色调，制作了相移光刻掩模，其中色调的电子束优于中紫外线束的电子束。抗蚀剂层在包括位于（透明）石英板上的图案化金属层的主体上旋转。该主体从下方经受洪水中紫外线束并且从上方受到图案化的电子束，该边缘位于图案化的不透明层的中间，但与图案化的不透明层的任何边缘不重合。因此，抗蚀剂层的随后的显影除去那些区域和仅有紫外线入射的抗蚀剂层的那些区域 - 即不在图案化的不透明层浇铸的阴影中 - 在不存在图案化电子的情况下光束。然后，各向异性蚀刻将（透明）衬底的未被剩余（图案化）抗蚀剂层覆盖的部分去除规定的深度。在其他实施例中，（图案化）电子束被（图案化）深紫外线束代替。在其它实施例中，相同的辐射（波长）可以用于图案化波束，如同用于漫射辐射的抗辐射辐射一样，抗蚀剂层的光调可以通过分别与图案化和泛光束的照射之间的中间处理步骤反转。

78. 发明授权

US07926001B2 Uniformity for semiconductor patterning operations 有权
标题翻译：半导体图案化操作的均匀性
公开(公告)号：US07926001B2
公开(公告)日：2011-04-12
申请号：US12014958
申请日：2008-01-16
申请人： Christophe Pierrat
发明人： Christophe Pierrat
IPC分类号： G06F17/50 , G03F1/00 , H01L21/302
CPC分类号： H01L21/3086 , H01L21/3088 , H01L27/118
摘要： Systems and methods of semiconductor device optimization include a system and method to determine a dataset for a layer of the semiconductor device, where the operation includes receiving a dataset defining a plurality of original patterns of sacrificial material in a layer of a semiconductor device, wherein the original patterns of sacrificial material are used to define placement of spacer material to define patterning of circuit elements for the semiconductor device; determining densities of the plurality of original patterns of sacrificial material in areas across a portion of the layer of the semiconductor device; and augmenting the dataset to include an additional pattern of sacrificial material in an area of the layer having a density lower than a threshold density.
摘要翻译：半导体器件优化的系统和方法包括确定半导体器件层的数据集的系统和方法，其中操作包括在半导体器件的层中接收限定牺牲材料的多个原始图案的数据集，其中，牺牲材料的原始图案用于限定间隔物材料的放置以限定用于半导体器件的电路元件的图案化; 确定在所述半导体器件的所述层的一部分的区域中的多个原始图案的牺牲材料的密度; 以及增加所述数据集以在所述层的具有低于阈值密度的密度的区域中包括牺牲材料的附加图案。

79. 发明授权

US07902613B1 Self-alignment for semiconductor patterns 有权
标题翻译：半导体图案的自对准
公开(公告)号：US07902613B1
公开(公告)日：2011-03-08
申请号：US12361407
申请日：2009-01-28
申请人： Christophe Pierrat
发明人： Christophe Pierrat
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/76807 , H01L21/76816 , H01L23/522 , H01L23/53228 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： Various systems and methods related to semiconductor devices having a plurality of layers and having a first conductive trace on a first layer electrically connected to a second conductive trace on a second layer and electrically isolated from a third electrical trace on the second layer are provided. A semiconductor structure can include first, second and third layers. The first conducting layer may be etched to form a first trench for the first conductive trace. A layer of material on the second layer in the first trench can define a patch area, wherein the patch area is disposed in a location where the first trench crosses over the third electrical trace. A second trench may be etched in an area defined by the first trench and the patch area to remove material in the second layer exposed by the first trench, leaving material of the layer under the patch area.
摘要翻译：提供了与具有多个层的半导体器件相关的各种系统和方法，并且在第一层上具有与第二层上的第二导电迹线电连接并与第二层上的第三电迹线电隔离的第一导电迹线。半导体结构可以包括第一层，第二层和第三层。可以蚀刻第一导电层以形成用于第一导电迹线的第一沟槽。第一沟槽中的第二层上的材料层可以限定贴片区域，其中贴片区域设置在第一沟槽跨过第三电迹线的位置。可以在由第一沟槽和贴片区域限定的区域中蚀刻第二沟槽，以去除由第一沟槽暴露的第二层中的材料，从而使层的材料留在贴片区域下方。

80. 发明申请

US20100299646A1 UNIFORMITY FOR SEMICONDUCTOR PATTERNING OPERATIONS 有权
标题翻译：半导体图案操作的均匀性
公开(公告)号：US20100299646A1
公开(公告)日：2010-11-25
申请号：US12014958
申请日：2008-01-16
申请人： Christophe Pierrat
发明人： Christophe Pierrat
IPC分类号： G06F17/50
CPC分类号： H01L21/3086 , H01L21/3088 , H01L27/118
摘要： Systems and methods of semiconductor device optimization include a system and method to determine a dataset for a layer of the semiconductor device, where the operation includes receiving a dataset defining a plurality of original patterns of sacrificial material in a layer of a semiconductor device, wherein the original patterns of sacrificial material are used to define placement of spacer material to define patterning of circuit elements for the semiconductor device; determining densities of the plurality of original patterns of sacrificial material in areas across a portion of the layer of the semiconductor device; and augmenting the dataset to include an additional pattern of sacrificial material in an area of the layer having a density lower than a threshold density.
摘要翻译：半导体器件优化的系统和方法包括确定半导体器件层的数据集的系统和方法，其中操作包括在半导体器件的层中接收限定牺牲材料的多个原始图案的数据集，其中，牺牲材料的原始图案用于限定间隔物材料的放置以限定用于半导体器件的电路元件的图案化; 确定在所述半导体器件的所述层的一部分的区域中的多个原始图案的牺牲材料的密度; 以及增加所述数据集以在所述层的具有低于阈值密度的密度的区域中包括牺牲材料的附加图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式