专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US4446474A Ion sensor FET with surface treated metal gate 失效
标题翻译：具有表面处理金属栅极的离子传感器FET
公开(公告)号：US4446474A
公开(公告)日：1984-05-01
申请号：US163792
申请日：1980-06-27
申请人： Takashi Mizusaki , Tadayuki Matsuo , Masayoshi Esashi , Hiroshi Abe
发明人： Takashi Mizusaki , Tadayuki Matsuo , Masayoshi Esashi , Hiroshi Abe
IPC分类号： G01N27/414 , H01L29/78 , G01N27/30
CPC分类号： G01N27/414
摘要： An ion sensor and more particularly ion sensitive field effect transistor comprising an inorganic film, and an impurity layer formed in at least surface layer of said inorganic film by thermal diffusion or ion implantation.
摘要翻译：离子传感器，更具体地，包括无机膜的离子敏感场效应晶体管，以及通过热扩散或离子注入形成在所述无机膜的至少表面层中的杂质层。

72. 发明授权

US4354308A Method for manufacture of a selective chemical sensitive FET transducer 失效
标题翻译：选择性化学敏感型FET换能器的制造方法
公开(公告)号：US4354308A
公开(公告)日：1982-10-19
申请号：US118774
申请日：1980-02-05
申请人： Kiyoo Shimada , Masayuki Matuo , Masayoshi Esashi
发明人： Kiyoo Shimada , Masayuki Matuo , Masayoshi Esashi
IPC分类号： G01N27/00 , G01N27/414 , H01L29/78 , H01L21/22
CPC分类号： G01N27/414
摘要： A selective chemical sensitive field-effect transistor device for use in detection and measurement of chemical properties of substances to which the device is exposed is disclosed. The chemical sensitive FET device comprises a semiconductor substrate, at least one pair of spaced apart diffusion layers formed on one surface of the semiconductor substrate and forming source and drain regions, respectively, and a double layer structure consisting of a silicon oxide layer and an electrically insulating layer overlaying the silicon oxide layer. A gate region located on a portion of the surface of the semiconductor substrate between the diffusion layers is overlaid with a chemical selective membrane adapted to interact with certain substances. A method for the manufacture of the above described FET device is also disclosed.
摘要翻译：公开了一种选择性化学敏感场效应晶体管器件，用于检测和测量器件暴露于物质的化学性质。化学敏感FET器件包括半导体衬底，分别形成在半导体衬底的一个表面上并分别形成源极和漏极区域的至少一对间隔开的扩散层，以及由氧化硅层和电覆盖氧化硅层的绝缘层。位于扩散层之间的半导体衬底的表面的一部分上的栅极区域覆盖有适于与某些物质相互作用的化学选择膜。还公开了制造上述FET器件的方法。

73. 发明授权

US4218298A Selective chemical sensitive FET transducer 失效
标题翻译：选择性化学敏感FET传感器
公开(公告)号：US4218298A
公开(公告)日：1980-08-19
申请号：US957433
申请日：1978-11-03
申请人： Kiyoo Shimada , Masayuki Matuo , Masayoshi Esashi
发明人： Kiyoo Shimada , Masayuki Matuo , Masayoshi Esashi
IPC分类号： G01N27/00 , G01N27/414 , H01L29/78 , G01N27/30
CPC分类号： G01N27/414
摘要： A selective chemical sensitive field-effect transistor device for use in detection and measurement of chemical properties of substances to which the device is exposed is disclosed. The chemical sensitive FET device comprises a semiconductor substrate, at least one pair of spaced apart diffusion layers formed on one surface of the semiconductor substrate and forming source and drain regions, respectively, and a double layer structure consisting of a silicon oxide layer and an electrically insulating layer overlaying the silicon oxide layer. A gate region located on a portion of the surface of the semiconductor substrate between the diffusion layers is overlaid with a chemical selective membrane adapted to interact with certain substances. A method for the manufacture of the above described FET device is also disclosed.
摘要翻译：公开了一种选择性化学敏感场效应晶体管器件，用于检测和测量器件暴露于物质的化学性质。化学敏感FET器件包括半导体衬底，分别形成在半导体衬底的一个表面上并分别形成源极和漏极区域的至少一对间隔开的扩散层，以及由氧化硅层和电覆盖氧化硅层的绝缘层。位于扩散层之间的半导体衬底的表面的一部分上的栅极区域覆盖有适于与某些物质相互作用的化学选择膜。还公开了制造上述FET器件的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式