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71. 发明申请

US20070145285A1 RADIOGRAPHIC IMAGING SUBSTRATE, RADIOGRAPHIC IMAGING APPARATUS, AND RADIOGRAPHIC IMAGING SYSTEM 失效
标题翻译：放射成像基板，放射成像装置和放射成像系统
公开(公告)号：US20070145285A1
公开(公告)日：2007-06-28
申请号：US11683184
申请日：2007-03-07
申请人： TAKAMASA ISHII , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
发明人： TAKAMASA ISHII , Masakazu Morishita , Chiori Mochizuki , Minoru Watanabe , Keiichi Nomura
IPC分类号： G01T1/20
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.
摘要翻译：一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件，用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到相同类型的偏置线，信号线和栅极线的至少多条线的光电转换层，其中连接布线的至少一部分布置在绝缘基板和绝缘基板的边缘。利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。

72. 发明申请

US20060249763A1 Radiation image pickup device 失效
公开(公告)号：US20060249763A1
公开(公告)日：2006-11-09
申请号：US10538013
申请日：2004-02-10
申请人： Chiori Mochizuki , Masakazu Morishita , Minoru Watanabe , Takamasa Ishii , Keiichi Nomura
发明人： Chiori Mochizuki , Masakazu Morishita , Minoru Watanabe , Takamasa Ishii , Keiichi Nomura
IPC分类号： H01L31/113
CPC分类号： H01L27/14658 , H04N5/32
摘要： In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

73. 发明授权

US07126158B2 Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system 失效
公开(公告)号：US07126158B2
公开(公告)日：2006-10-24
申请号：US11294519
申请日：2005-12-06
申请人： Toshiko Morii , Masakazu Morishita , Minoru Watanabe
发明人： Toshiko Morii , Masakazu Morishita , Minoru Watanabe
IPC分类号： H01L29/04
CPC分类号： H01L27/14658
摘要： An image pickup apparatus or a radiation image pickup apparatus according to the present invention includes: a plurality of pixels which are two-dimensionally arranged on a substrate, each of the plurality of pixels including a set of a semiconductor conversion element that converts an incident electromagnetic wave into an electrical signal and a switching element connected with the semiconductor conversion element; a drive wiring which is commonly connected with the plurality of switching elements arranged in a direction; and a signal wiring which is commonly connected with the plurality of switching elements arranged in a direction different from the direction, the switching element including a first semiconductor layer, the semiconductor conversion element being formed after the switching elements are formed and including the second semiconductor layer formed after the first semiconductor layer is formed, in which the semiconductor conversion element has an electrode formed outside a region in which two of the drive wiring, an electrode of the switching element, and the signal wiring overlap each other, exclusive of at least part of a region above the drive wiring and at least part of a region above the electrode of the switching element.

74. 发明授权

US07126127B2 Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system 有权
标题翻译：摄像装置及其制造方法，放射线摄像装置和放射线摄像系统
公开(公告)号：US07126127B2
公开(公告)日：2006-10-24
申请号：US10954194
申请日：2004-10-01
申请人： Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Keiichi Nomura , Takamasa Ishii
发明人： Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Keiichi Nomura , Takamasa Ishii
IPC分类号： G01T1/24
CPC分类号： H01L27/14643 , H01L27/14676
摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
摘要翻译：在图像拾取装置中，将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态底物。图像拾取装置包括栅极配线，多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线，多个像素的薄膜晶体管的源电极或漏电极布置在其上在与该方向不同的方向上共同连接在基板上。保护层布置在薄膜晶体管，栅极布线和信号布线上。保护层至少在同一时间形成。然后，在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。

75. 发明申请

US20060065944A1 Image pickup apparatus and radiation image pickup apparatus 失效
公开(公告)号：US20060065944A1
公开(公告)日：2006-03-30
申请号：US11229630
申请日：2005-09-20
申请人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
发明人： Chiori Mochizuki , Masakazu Morishita , Keiichi Nomura , Minoru Watanabe , Takamasa Ishii
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H01L27/14636 , H01L27/14676
摘要： To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

76. 发明申请

US20060033033A1 Radiation detection apparatus and system 失效
标题翻译：辐射检测装置及系统
公开(公告)号：US20060033033A1
公开(公告)日：2006-02-16
申请号：US11245825
申请日：2005-10-07
申请人： Keiichi Nomura , Masakazu Morishita
发明人： Keiichi Nomura , Masakazu Morishita
IPC分类号： G01T1/24
CPC分类号： G01T1/2018 , G01T1/2928
摘要： The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.
摘要翻译：本发明提供适于拍摄运动图像的放射线检测装置。放射线检测装置具有像素，包括用于将辐射转换为光的荧光体的像素，用于将在磷光体中转换的光转换为电信号的光电转换单元，用于传送转换为光电的电信号的薄膜晶体管（TFT 1）转换单元，用于累积由薄膜晶体管（TFT 1）传送的电信号的电容，以及用于读取累积在电容中的电信号的薄膜晶体管（TFT2）。光电转换单元，薄膜晶体管（TFT 1），电容和薄膜晶体管（TFT2）由相同的层结构形成，并且至少由下电极或栅电极形成，栅极绝缘膜和半导体层，并由保护层与荧光体隔开。

77. 发明授权

US06984813B2 Imaging apparatus 有权
标题翻译：成像设备
公开(公告)号：US06984813B2
公开(公告)日：2006-01-10
申请号：US10957604
申请日：2004-10-05
申请人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki
发明人： Takamasa Ishii , Masakazu Morishita , Chiori Mochizuki
IPC分类号： H01L27/00
CPC分类号： H01L27/14663 , H01L27/1462 , H01L27/14625 , H01L31/02161 , H01L31/02322
摘要： A radiation detecting apparatus comprises a wavelength conversion element for converting a radiation into a light, a photoelectric conversion layer for converting the light into a charge, an electrode layer formed on the photoelectric conversion layer, a first protective layer formed on the electrode layer, and a second protective layers formed on the first protective layer, wherein refractive indices nc1 and nc2 of the first and second protective layers meet a relation: nc1−nc2≦1.5, thereby providing a high sensitivity of detecting the radiation.
摘要翻译：辐射检测装置包括用于将辐射转换成光的波长转换元件，用于将光转换为电荷的光电转换层，形成在光电转换层上的电极层，形成在电极层上的第一保护层，以及形成在所述第一保护层上的第二保护层，其中所述第一和第二保护层的折射率n C 1和n 2 c 2满足关系：n < /SUB>-n_c2<=1.5，从而提供检测辐射的高灵敏度。

78. 发明授权

US06944266B2 X-ray imaging apparatus 失效
标题翻译： X射线成像装置
公开(公告)号：US06944266B2
公开(公告)日：2005-09-13
申请号：US10685534
申请日：2003-10-16
申请人： Tatsuya Yamazaki , Masakazu Morishita , Isao Kobayashi , Osamu Tsujii , Akira Hirai , Toshikazu Tamura , Hideki Nonaka , Takamasa Ishii
发明人： Tatsuya Yamazaki , Masakazu Morishita , Isao Kobayashi , Osamu Tsujii , Akira Hirai , Toshikazu Tamura , Hideki Nonaka , Takamasa Ishii
IPC分类号： A61B6/00 , H05G1/44 , H05G1/64
CPC分类号： A61B6/107 , A61B6/06 , A61B6/4291 , A61B6/542 , A61B6/544 , H05G1/44
摘要： An X-ray imaging apparatus including an X-ray generation means for emitting X-rays, and an X-ray detector on which a grid selected from a plurality of different types of grids is removably mountable. The X-ray detector receives the X-rays emitted from the X-ray generation means, and obtains an X-ray image. The X-ray detector includes an automatic exposure control (AEC) detector for detecting the quantity of X-rays emitted from the X-ray generation means and for outputting a signal based on the detected quantity. The X-ray imaging apparatus also includes a control means for controlling the X-ray generation means and the AEC detector, where the control means controls the X-ray generation means based on the signal output from the AEC detector, and where the control means controls the AEC detector using correction data to correct an exposure detection element forming a part of the AEC detector.
摘要翻译：一种X射线成像装置，包括用于发射X射线的X射线产生装置以及从多个不同类型的网格中选择的格栅可移除地安装的X射线检测器。 X射线检测器接收从X射线产生装置发射的X射线，并获得X射线图像。 X射线检测器包括自动曝光控制（AEC）检测器，用于检测从X射线产生装置发射的X射线的量并且基于检测到的量输出信号。 X射线成像装置还包括用于控制X射线产生装置和AEC检测器的控制装置，其中控制装置基于从AEC检测器输出的信号控制X射线产生装置，并且其中控制装置使用校正数据控制AEC检测器，以校正形成AEC检测器的一部分的曝光检测元件。

79. 发明授权

US06838673B2 Electromagnetic wave transforming device 失效
标题翻译：电磁波变换装置
公开(公告)号：US06838673B2
公开(公告)日：2005-01-04
申请号：US09984174
申请日：2001-10-29
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： G01T1/24 , A61B6/00 , G01T1/00 , G01T1/29 , H01L27/14 , H01L27/146 , H01L31/09 , H04N5/32 , H05G1/26
CPC分类号： H01L27/14663 , A61B6/00 , A61B6/4233 , A61B6/542 , G01T1/2928 , H01L27/14661
摘要： An electromagnetic wave detecting device is provided, which comprises: a detecting unit for transforming an electromagnetic wave into an electric charge for detection, a reset unit for resetting the potential of the detecting unit, a storing unit for storing a signal electric charge generated in the detecting unit by the electromagnetic wave, a first reading unit for reading the signal electric charge, and a second reading unit for reading the potential of the signal electric charge stored in the storing unit in a nondestructive manner.
摘要翻译：提供了一种电磁波检测装置，包括：用于将电磁波变换成用于检测的电荷的检测单元，用于复位检测单元的电位的复位单元;存储单元，用于存储在通过电磁波检测单元，读取信号电荷的第一读取单元和用于以非破坏性方式读取存储在存储单元中的信号电荷的电位的第二读取单元。

80. 发明授权

US06784492B1 Semiconductor device including a gate-insulated transistor 失效
标题翻译：半导体器件包括栅极绝缘晶体管
公开(公告)号：US06784492B1
公开(公告)日：2004-08-31
申请号：US08250942
申请日：1994-05-31
申请人： Masakazu Morishita
发明人： Masakazu Morishita
IPC分类号： H01L2701
CPC分类号： H01L29/105 , H01L29/1033 , H01L29/78
摘要： A semiconductor device comprises at least a semiconductor layer including source and drain areas of a first conductive type and of a high impurity concentration and a channel area positioned between the source and drain areas, an insulation layer covering at least the channel area, and a gate electrode positioned close to the insulation layer. The channel area at least comprises a first channel area of a low resistance, positioned close to the insulation layer and having a second conductive type opposite to the first conductive type, and a second channel area of a high resistance, having the first conductive type and positioned adjacent to the first channel area.
摘要翻译：半导体器件至少包括半导体层，其包括第一导电类型和高杂质浓度的源极和漏极区域以及位于源极和漏极区域之间的沟道区域，至少覆盖沟道区域的绝缘层和栅极电极靠近绝缘层定位。通道区域至少包括低电阻的第一通道区域，其位于绝缘层附近并且具有与第一导电类型相反的第二导电类型和具有第一导电类型的高电阻的第二沟道区域，以及定位在第一通道区域附近。

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