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    • 77. 发明授权
    • Method of forming deposition film
    • 形成沉积膜的方法
    • US4683147A
    • 1987-07-28
    • US722468
    • 1985-04-12
    • Ken EguchiHiroshi MatsudaMasahiro HarutaYukuo NishimuraYutaka HiraiTakashi Nakagiri
    • Ken EguchiHiroshi MatsudaMasahiro HarutaYukuo NishimuraYutaka HiraiTakashi Nakagiri
    • B05D3/06B05D7/24C23C16/22C23C16/48H01L21/205
    • B05D1/60C23C16/22C23C16/482C23C16/483C23C16/488H01L21/0237H01L21/0245H01L21/02532H01L21/02576H01L21/02579H01L21/0262B05D3/06
    • A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.2b (wherein X is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si.sub. c X.sub.d Y.sub.e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) Si.sub.f Y.sub.g Y.sub.h (X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) Si.sub.i H.sub.j X.sub.k (wherein X is a halogen atom, i,j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.
    • 一种形成沉积在基底上的含硅膜的方法,其包括以下步骤:形成至少一种选自以下通式(A),(B),(C ),(D),(E)和(F),并且向化合物施加光能以排出和分解化合物。 通式(A) - (F)的化合物定义如下:(A)SinHmX1(其中X是卤素原子,n是不小于3的整数,m和l是不小于1的整数 分别为m + 1 = 2n;如果l为不小于2的整数,多个X可以表示不同的卤原子),代表环状硅化合物; (B)代表链卤化硅化合物的SiaX2a + 2(其中X是卤素原子,a是1至6的整数); (C)表示环状卤代硅化合物的SibX2b(其中,X为卤素原子,b为3〜6的整数) (D)Si cXdYe(其中X和Y是不同的卤素原子,c是3至6的整数,d和e是不小于1的整数,d + e = 2c)表示环状卤化硅化合物; (E)SifYgYh(X和Y是不同的卤素原子,f是1至6的整数,g和h是不小于1的整数,g + h = 2f + 2)代表链卤化硅化合物; 和(F)SiiHjXk(其中X是卤素原子,i,j和k是不小于1的整数,j + k = 2i + 2)表示硅化合物。