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71. 发明申请

US20050158929A1 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US20050158929A1
公开(公告)日：2005-07-21
申请号：US11034767
申请日：2005-01-14
申请人： Shunpei Yamazaki , Jun Koyama , Setsuo Nakajima , Naoya Sakamoto
发明人： Shunpei Yamazaki , Jun Koyama , Setsuo Nakajima , Naoya Sakamoto
IPC分类号： H01L29/786 , G02F1/133 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/8238 , H01L21/84 , H01L27/04 , H01L27/08 , H01L27/092 , H01L27/12 , H04N9/31 , H01L21/00
CPC分类号： H01L27/124 , G02F1/13454 , G09G3/3208 , G09G3/3648 , G09G2300/0408 , G09G2300/043 , G09G2300/08 , G09G2310/0248 , G09G2310/0267 , G09G2310/0275 , G09G2320/029 , G09G2320/043 , H01L27/1214 , H01L29/78648 , H04N9/3102 , H04N9/3105 , H04N9/312 , H04N9/3173
摘要： There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.

72. 发明申请

US20050112850A1 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050112850A1
公开(公告)日：2005-05-26
申请号：US10944933
申请日：2004-09-21
申请人： Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , C30B1/00 , H01L21/36
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L27/3244 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L2251/5315
摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
摘要翻译：通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜。接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

73. 发明申请

US20050067618A1 Method of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050067618A1
公开(公告)日：2005-03-31
申请号：US10973868
申请日：2004-10-26
申请人： Setsuo Nakajima , Hisashi Ohtani , Shunpei Yamazaki
发明人： Setsuo Nakajima , Hisashi Ohtani , Shunpei Yamazaki
IPC分类号： G02B27/00 , G02B27/01 , G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/423 , H01L29/786 , H01L21/00 , H01L29/10 , H01L29/94 , H01L31/20
CPC分类号： G02B27/017 , G02B2027/0138 , G02F1/13454 , H01L27/124 , H01L27/3244 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78627
摘要： Subjected to obtain a crystalline TFT which simultaneously prevents increase of OFF current and deterioration of ON current. A gate electrode of a crystalline TFT is comprised of a first gate electrode and a second gate electrode formed in contact with the first gate electrode and a gate insulating film. LDD region is formed by using the first gate electrode as a mask, and a source region and a drain region are formed by using the second gate electrode as a mask. By removing a portion of the second gate electrode, a structure in which a region where LDD region and the second gate electrode overlap with a gate insulating film interposed therebetween, and a region where LDD region and the second gate electrode do not overlap, is obtained.
摘要翻译：需要获得同时防止OFF电流增加和导通电流劣化的晶体TFT。晶体TFT的栅电极由形成为与第一栅电极和栅极绝缘膜接触形成的第一栅电极和第二栅极构成。通过使用第一栅电极作为掩模形成LDD区，并且通过使用第二栅极作为掩模形成源区和漏区。通过去除第二栅电极的一部分，获得其中LDD区和第二栅极与其间插入栅极绝缘膜重叠的区域以及LDD区和第二栅电极不重叠的区域的结构。

74. 发明授权

US06855584B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06855584B2
公开(公告)日：2005-02-15
申请号：US10107592
申请日：2002-03-28
申请人： Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L27/3244 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L2251/5315
摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
摘要翻译：通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜。接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

75. 发明申请

US20050017242A1 Electro-optical device and manufacturing method thereof 失效
标题翻译：电光装置及其制造方法
公开(公告)号：US20050017242A1
公开(公告)日：2005-01-27
申请号：US10919650
申请日：2004-08-17
申请人： Shunpei Yamazaki , Hisashi Ohtani , Setsuo Nakajima
发明人： Shunpei Yamazaki , Hisashi Ohtani , Setsuo Nakajima
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/78645 , H01L27/124 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.
摘要翻译：提供了使用高可靠性TFT结构的半导体器件。 n沟道型TFT的栅电极由覆盖第一栅电极的第一栅电极和第二栅极形成。 LDD区域具有通过栅极绝缘膜与第二栅电极重叠的部分，以及不重叠的部分。结果，可以防止TFT在导通状态下的劣化，并且可以将关闭状态下的漏电流减少。

76. 发明授权

US06815273B2 Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06815273B2
公开(公告)日：2004-11-09
申请号：US10292830
申请日：2002-11-12
申请人： Setsuo Nakajima , Hisashi Ohtani , Shunpei Yamazaki
发明人： Setsuo Nakajima , Hisashi Ohtani , Shunpei Yamazaki
IPC分类号： H01L2100
CPC分类号： G02B27/017 , G02B2027/0138 , G02F1/13454 , H01L27/124 , H01L27/3244 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78627
摘要： Subjected to obtain a crystalline TFT which simultaneously prevents increase of OFF current and deterioration of ON current. A gate electrode of a crystalline TFT is comprised of a first gate electrode and a second gate electrode formed in contact with the first gate electrode and a gate insulating film. LDD region is formed by using the first gate electrode as a mask, and a source region and a drain region are formed by using the second gate electrode as a mask. By removing a portion of the second gate electrode, a structure in which a region where LDD region and the second gate electrode overlap with a gate insulating film interposed therebetween, and a region where LDD region and the second gate electrode do not overlap, is obtained.
摘要翻译：需要获得同时防止OFF电流增加和导通电流劣化的晶体TFT。晶体TFT的栅电极由形成为与第一栅电极和栅极绝缘膜接触形成的第一栅电极和第二栅极构成。通过使用第一栅电极作为掩模形成LDD区，并且通过使用第二栅极作为掩模形成源区和漏区。通过去除第二栅电极的一部分，获得其中LDD区和第二栅极与其间插入栅极绝缘膜重叠的区域以及LDD区和第二栅电极不重叠的区域的结构。

77. 发明授权

US06794681B2 Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件的基板及其制造方法以及半导体器件及其制造方法
公开(公告)号：US06794681B2
公开(公告)日：2004-09-21
申请号：US09953483
申请日：2001-09-14
申请人： Setsuo Nakajima , Shunpei Yamazaki , Hisashi Ohtani , Satoshi Teramoto , Toshiji Hamatani
发明人： Setsuo Nakajima , Shunpei Yamazaki , Hisashi Ohtani , Satoshi Teramoto , Toshiji Hamatani
IPC分类号： H01L2904
CPC分类号： H01L29/78603 , G02F1/13454 , H01L27/12 , H01L27/1248 , Y10S438/928
摘要： There are provided a substrate of a semiconductor device and a fabrication method thereof which allow to suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced pressure thermal CVD. It allows to suppress the impurity from infiltrating from the glass substrate to an active region of the TFT in the later process.
摘要翻译：提供了一种半导体器件的衬底及其制造方法，其可以在TFT的制造步骤中抑制杂质从玻璃或石英衬底转向。沉积绝缘膜，以便通过减压热CVD围绕玻璃基板。这允许在稍后的工艺中抑制杂质从玻璃衬底渗透到TFT的有源区。

78. 发明授权

US06706568B2 Method for manufacturing a semiconductor device with a crystallized semiconductor film leveled by radiating with laser beams 失效
标题翻译：一种半导体器件的制造方法，该半导体器件具有通过用激光束照射而被平坦化的结晶半导体膜
公开(公告)号：US06706568B2
公开(公告)日：2004-03-16
申请号：US10131503
申请日：2002-04-25
申请人： Setsuo Nakajima
发明人： Setsuo Nakajima
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , C03C17/22 , C03C2218/32 , H01L21/02672 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L27/1281 , H01L27/1285 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765
摘要： A purpose of the invention is to provide a method for leveling a semiconductor layer without increasing the number and the complication of manufacturing processes as well as without deteriorating a crystal characteristic, and a method for leveling a surface of a semiconductor layer to stabilize an interface between the surface of the semiconductor layer and a gate insulating film, in order to achieve a TFT having a good characteristic. In an atmosphere of one kind or a plural kinds of gas selected from hydrogen or inert gas (nitrogen, argon, helium, neon, krypton and xenon), radiation with a laser beam in the first, second and third conditions is carried out in order, wherein the first condition laser beam is radiated for crystallizing a semiconductor film or improving a crystal characteristic; the second condition laser beam is radiated for eliminating an oxide film; and the third condition laser beam is radiated for leveling a surface of the crystallized semiconductor film.
摘要翻译：本发明的目的是提供一种在不增加制造工艺的数量和复杂性以及不劣化晶体特性的情况下调整半导体层的方法，以及用于使半导体层的表面平整以稳定第半导体层的表面和栅极绝缘膜，以实现具有良好特性的TFT。在选自氢或惰性气体（氮气，氩气，氦气，氖气）中的一种或多种气体的气氛中，氪和氙），按照第一，第二和第三条件的激光束的照射顺序进行，其中第一条件激光束被辐射以使半导体膜结晶或改善晶体特性; 第二条件激光束被辐射以消除氧化膜; 并且第三条件激光束被照射以使结晶的半导体膜的表面平整。

79. 发明授权

US06501094B1 Semiconductor device comprising a bottom gate type thin film transistor 失效
标题翻译：半导体器件包括底栅型薄膜晶体管
公开(公告)号：US06501094B1
公开(公告)日：2002-12-31
申请号：US09095026
申请日：1998-06-09
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L2904
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： A semiconductor device includes a bottom gate type thin film transistor, wherein the bottom gate type thin film transistor is characterized in that a gate electrode is composed of a first layer comprising titanium and a second layer comprising aluminum formed on the first layer.
摘要翻译：半导体器件包括底栅型薄膜晶体管，其中底栅型薄膜晶体管的特征在于，栅电极由形成在第一层上的由钛构成的第一层和包含铝的第二层构成。

80. 发明授权

US06380011B1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06380011B1
公开(公告)日：2002-04-30
申请号：US09363954
申请日：1999-07-29
申请人： Shunpei Yamazaki , Setsuo Nakajima , Ritsuko Kawasaki
发明人： Shunpei Yamazaki , Setsuo Nakajima , Ritsuko Kawasaki
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L27/12 , H01L29/4908
摘要： To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.
摘要翻译：提供纯化有源层和绝缘膜之间的界面所需的技术。在基板（101）上形成栅极布线（103），其表面被栅极氧化膜（104）覆盖。然后，依次形成并层叠第一绝缘膜（105a），第二绝缘膜（105b），半导体膜（106）和保护膜（107），而不将其暴露在空气中。此外，半导体膜（106）通过保护膜（107）照射激光。以这种方式，通过完全净化半导体膜的界面，可以赋予TFT良好的特性。

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