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    • 72. 发明授权
    • Process for producing trans-1,4-cyclohexanedicarboxylic acid
    • 反式-1,4-环己烷二羧酸的制备方法
    • US07595423B2
    • 2009-09-29
    • US11924161
    • 2007-10-25
    • Koetsu EndouHirofumi NakamuraShinichi Tanaka
    • Koetsu EndouHirofumi NakamuraShinichi Tanaka
    • C07C61/00
    • C07C51/353C07C51/363C07C2601/14C07C61/09
    • A subject for the invention is to obtain trans-1,4-cyclohexanedicarboxylic acid (t-CHDA) in a high concentration by efficiently isomerizing cis-1,4-cyclohexanedicarboxylic acid (c-CHDA) by a simple method. The invention provides: (1) a process for producing t-CHDA which comprises heating crude CHDA to 180° C. or higher in an inert atmosphere and causing the t-CHDA formed by isomerization to precipitate in the molten c-CHDA while holding the crude CHDA at a temperature in the range of not lower than 180° C. and less than the melting point of t-CHDA; (2) a process for producing t-CHDA, wherein crude CHDA which is powdery or granular is heat-treated at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA to thereby isomerize the cis isomer to the trans isomer while maintaining the powdery or granular state; (3) a process for producing t-CHDA, wherein crude CHDA is held at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA in an inert atmosphere while maintaining flowing to thereby obtain powdery or granular t-CHDA; and (4) a process for purifying crude CHDA in which crude CHDA obtained through the step of hydrogenating TPA or the like is heated in an atmosphere of an inert gas to volatilize and remove impurities.
    • 本发明的目的是通过简单的方法有效地使顺式-1,4-环己烷二羧酸(c-CHDA)异构化,以高浓度获得反式-1,4-环己烷二羧酸(t-CHDA)。 本发明提供:(1)一种生产t-CHDA的方法,其包括在惰性气氛中将粗CHDA加热至180℃或更高,并使通过异构化形成的t-CHDA在熔融的c-CHDA中沉淀,同时保持 原料CHDA在不低于180℃且小于t-CHDA的熔点的温度范围内; (2)生产t-CHDA的方法,其中将粉末状或粒状的粗CHDA在不低于c-CHDA的熔点并低于t-CHDA的熔点的温度下进行热处理,从而异构化 顺式异构体反式异构体,同时保持粉状或颗粒状态; (3)生产t-CHDA的方法,其中将粗CHDA保持在不低于c-CHDA的熔点并低于在惰性气氛中的t-CHDA的熔点的温度,同时保持流动,从而获得 粉状或颗粒状t-CHDA; (4)一种纯化粗制CHDA的方法,其中通过氢化TPA等步骤得到的粗CHDA在惰性气体气氛中加热,挥发除去杂质。
    • 78. 发明授权
    • Method of surface treatment of titanium metal
    • 钛金属表面处理方法
    • US07291229B2
    • 2007-11-06
    • US10659327
    • 2003-09-11
    • Eiichi IshiiTakumi SoneYukihiro SatoKei DemizuHideo KakutaniKoichi TanakaShinichi TanakaNoriyoshi Tsuji
    • Eiichi IshiiTakumi SoneYukihiro SatoKei DemizuHideo KakutaniKoichi TanakaShinichi TanakaNoriyoshi Tsuji
    • C23C8/20C23C8/36C22C14/00
    • C23C8/36
    • A method of carburizing treatment is proposed in which if carburizing is carried out at a low temperature, carbon will not turn amorphose and deposit on the surface of a titanium metal but reliably penetrate into between metallic atoms. It is a method of surface treatment of a titanium metal comprising the steps of heating the titanium metal to a temperature of 400-690° C. in a cleaning gas atmosphere containing hydrogen gas, subjecting the surface of the titanium metal to cleaning by applying a DC voltage of 200-1500 V, and plasma carburizing in an atmosphere comprising a carburizing gas having an atomic weight ratio of hydrogen atoms (H) to carbon atoms (C) adjusted to 1≦H/C≦9 at a pressure of 13-400 Pa and a temperature of 400-690° C. Ionization reaction in the gas is suppressed suitably. Because there exists no excessive carbon which is not used for carburization but turns soot or glass-like carbon, in the atmosphere during carburization, carburizing reaction progresses smoothly.
    • 提出了一种渗碳处理方法,其中如果在低温下进行渗碳,则碳不会变形并沉积在钛金属的表面上,而是可靠地渗入金属原子之间。 它是钛金属的表面处理方法,包括以下步骤:在含有氢气的清洁气体气氛中将钛金属加热到400-690℃的温度,通过施加钛金属来清洁钛金属表面 DC电压为200-1500V,并且在包含在氢气压力下调节至1 <= H / C <= 9的原子比为氢原子(H)与碳原子(C)的原子比的渗碳气体的气氛中的等离子体渗碳 13-400Pa,温度400-690℃。适当地抑制气体中的离子化反应。 由于不存在不用于渗碳而变成烟灰或玻璃状碳的过量碳,在渗碳时的气氛中,渗碳反应平稳进行。