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71. 发明申请

US20060126371A1 Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method 有权
标题翻译：磁阻效应器件，磁性随机存取存储器和磁阻效应器件制造方法
公开(公告)号：US20060126371A1
公开(公告)日：2006-06-15
申请号：US11262791
申请日：2005-11-01
申请人： Toshihiko Nagase , Sumio Ikegawa
发明人： Toshihiko Nagase , Sumio Ikegawa
IPC分类号： G11C11/22
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m2 per unit area which is smaller than the magnetic moment m1, and has an amplitude h2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h3, which is smaller than the amplitudes h1 and h2, of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.
摘要翻译：磁阻效应器件包括具有固定磁化方向的第一铁磁层，并且每单位面积具有磁矩ml。非磁性层与第一铁磁层接触并且具有在非磁性层和第一铁磁层之间的界面的粗糙度的振幅hi。第二铁磁层与非磁性层接触，具有固定的磁化方向，每单位面积的磁矩m 2小于磁矩m 1，并且具有第二铁磁层之间的界面的粗糙度的振幅h 2 和非磁性层。阻挡层与第二铁磁层接触，并且具有比阻挡层和第二铁磁层之间的界面的粗糙度的幅度h 1和h 2的振幅h 3。第三铁磁层与阻挡层接触并具有可变的磁化方向。

72. 发明申请

US20050036225A1 Magnetic recording-reproducing apparatus 有权
标题翻译：磁记录再现装置
公开(公告)号：US20050036225A1
公开(公告)日：2005-02-17
申请号：US10944882
申请日：2004-09-21
申请人： Tadashi Kai , Akira Kikitsu , Toshihiko Nagase , Tomoyuki Maeda , Junichi Akiyama
发明人： Tadashi Kai , Akira Kikitsu , Toshihiko Nagase , Tomoyuki Maeda , Junichi Akiyama
IPC分类号： G11B5/65 , G11B5/00 , G11B5/012 , G11B5/02 , G11B5/127 , G11B5/64 , G11B5/66 , G11B5/73 , G11B11/10 , G11B11/105 , G11B13/04
CPC分类号： G11B5/7325 , G11B5/00 , G11B5/012 , G11B5/127 , G11B5/64 , G11B13/045 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021
摘要： A magnetic recording-reproducing apparatus has a magnetic recording medium having a nonmagnetic substrate, and a functional layer and a recording layer formed on the nonmagnetic substrate, the recording layer exhibiting a magnetic anisotropy energy density KuRL, the functional layer developing ferromagnetism upon irradiation with light so as to exhibit a magnetic anisotropy energy density KuFL lower than the magnetic anisotropy energy density KuRL and the functional layer serving to lower the magnetic anisotropy energy density of the recording layer through exchange coupling interaction with the recording layer when the functional layer is irradiated with light, a light source which irradiates the functional layer with light, and a magnetic head having a writing head writing signal magnetization by applying a magnetic field to the recording layer and a reading head reading the signal magnetization recorded in the recording layer.
摘要翻译：磁记录再现装置具有具有非磁性基板的磁记录介质和形成在非磁性基板上的功能层和记录层，记录层呈现磁各向异性能量密度KuRL，功能层在照射光时显现出铁磁性以便表现出低于磁各向异性能量密度KuRL的磁各向异性能量密度KuFL以及当功能层被光照射时通过与记录层的交换耦合相互作用来降低记录层的磁各向异性能量密度的功能层，用光照射功能层的光源，以及具有通过向记录层施加磁场而具有写入信号磁化的写入头的磁头以及读取记录在记录层中的信号磁化的读取头。

73. 发明授权

US06385162B1 Optical disk 失效
标题翻译：光盘
公开(公告)号：US06385162B1
公开(公告)日：2002-05-07
申请号：US09272783
申请日：1999-03-19
申请人： Toshihiko Nagase , Katsutaro Ichihara
发明人： Toshihiko Nagase , Katsutaro Ichihara
IPC分类号： G11B724
CPC分类号： G11B7/252 , B32B3/02 , G11B7/00 , G11B7/24065 , G11B7/2531 , G11B7/2534 , G11B7/2585 , G11B2007/25706 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716
摘要： An optical disk which operates which two of more different wavelengths, comprising a disk substrate on which tracks are formed at a track pitch of not more than 0.5 &mgr;m corresponding to light with a short wavelength, a super-resolution film whose transmittance changes due to irradiation of light, and a recording layer, wherein the transmittance of the super-resolution film changes due to the irradiation of light with a long wavelength. In this optical disk, information recorded by light with a short wavelength can be reproduced by light with a long wavelength.
摘要翻译：一种光盘，其操作两个更不同的波长，其中包括对应于具有短波长的光的轨道间距不大于0.5μm的轨道形成在其上的盘基板，其透射率由于照射而变化的超分辨率膜的光和记录层，其中超分辨率膜的透射率由于长波长的光的照射而改变。在该光盘中，可以用长波长的光再现由具有短波长的光记录的信息。

74. 发明授权

US06339582B1 Optical disk and recording/reproducing method thereof 失效
标题翻译：光盘及其记录/再现方法
公开(公告)号：US06339582B1
公开(公告)日：2002-01-15
申请号：US09272777
申请日：1999-03-19
申请人： Katsutaro Ichihara , Toshihiko Nagase
发明人： Katsutaro Ichihara , Toshihiko Nagase
IPC分类号： G11B700
CPC分类号： G11B7/252 , B82Y10/00 , G11B7/00455 , G11B7/0052 , G11B7/24 , G11B7/2585 , G11B2007/25706 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716 , Y10T428/21
摘要： An optical disk having a recording layer onto which light is irradiated to perform recording/reproducing of information, comprising a super-resolution film for recording and a reflective film which are formed in the side opposite to the light entering side with respect to the recording layer, and a super-resolution film for reproduction formed in the light entering side with respect to the recording layer.
摘要翻译：一种光盘，其具有照射光的记录层，以执行信息的记录/再现，包括用于记录的超分辨率胶片和反射膜，该反射膜形成在相对于记录层的光入射侧的相反侧以及相对于记录层在光入射侧形成的用于再现的超分辨率膜。

75. 发明授权

US09620561B2 Magnetoresistive element and manufacturing method thereof 有权
公开(公告)号：US09620561B2
公开(公告)日：2017-04-11
申请号：US14627552
申请日：2015-02-20
申请人： Toshihiko Nagase , Daisuke Watanabe , Youngmin Eeh , Koji Ueda , Kazuya Sawada , Makoto Nagamine
发明人： Toshihiko Nagase , Daisuke Watanabe , Youngmin Eeh , Koji Ueda , Kazuya Sawada , Makoto Nagamine
IPC分类号： H01L21/00 , H01L29/82 , H01L27/22 , H01L43/08 , H01L21/677 , H01L43/12
CPC分类号： H01L27/222 , H01L21/67709 , H01L29/82 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.

76. 发明授权

US09142756B2 Tunneling magnetoresistive element having a high MR ratio 有权
标题翻译：具有高MR比的隧道磁阻元件
公开(公告)号：US09142756B2
公开(公告)日：2015-09-22
申请号：US14157387
申请日：2014-01-16
申请人： Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase
发明人： Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase
IPC分类号： G11B5/39 , H01L43/02 , H01L43/12 , H01L43/10
CPC分类号： H01L43/02 , G11B5/3909 , H01L43/10 , H01L43/12
摘要： A magnetoresistive element includes a first ferromagnetic layer formed on a base substrate, a tunnel barrier layer formed on the first ferromagnetic layer, and a second ferromagnetic layer containing B formed on the tunnel barrier layer. The second ferromagnetic layer includes at least one of H, F, Cl, Br, I, C, O, and N, and a concentration of molecules of the at least one of H, F, Cl, Br, I, C, O, and N included in the second ferromagnetic layer is higher in a central portion in a depth direction of the second ferromagnetic layer than in an upper surface and a lower surface thereof.
摘要翻译：磁阻元件包括形成在基底基板上的第一铁磁层，形成在第一铁磁层上的隧道势垒层和形成在隧道势垒层上的含有B的第二铁磁层。第二铁磁层包括H，F，Cl，Br，I，C，O和N中的至少一种，H，F，Cl，Br，I，C，O中的至少一种的分子浓度，并且第二铁磁层中包含的N在第二铁磁层的深度方向上的中心部比在其上表面和下表面高。

77. 发明授权

US08750030B2 Magnetoresistive element and magnetic random access memory 有权
标题翻译：磁阻元件和磁性随机存取存储器
公开(公告)号：US08750030B2
公开(公告)日：2014-06-10
申请号：US13236589
申请日：2011-09-19
申请人： Koji Ueda , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Hiroaki Yoda
发明人： Koji Ueda , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括电极层，第一磁性层，第二磁性层和非磁性层。电极层包括包括Mo，Nb和W中的至少一种的金属层。第一磁性层设置在与金属层接触的金属层上，并且在垂直于膜的方向上具有易磁化轴平面，并且在磁化方向上是可变的。第二磁性层设置在第一磁性层上，并且在垂直于膜平面的方向上具有易磁化轴，并且在磁化方向上是不变的。非磁性层设置在第一和第二磁性层之间。第一磁性层的磁化方向由穿过第一磁性层，非磁性层和第二磁性层的电流而变化。

78. 发明授权

US08547737B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08547737B2
公开(公告)日：2013-10-01
申请号：US13628724
申请日：2012-09-27
申请人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
发明人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.
摘要翻译：根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜第一界面磁性膜和第二界面磁性膜。

79. 发明申请

US20130010532A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME 有权
公开(公告)号：US20130010532A1
公开(公告)日：2013-01-10
申请号：US13427732
申请日：2012-03-22
申请人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
发明人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
IPC分类号： G11C11/15 , H01L29/82 , B82Y99/00
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

80. 发明申请

US20130001714A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20130001714A1
公开(公告)日：2013-01-03
申请号：US13424301
申请日：2012-03-19
申请人： Katsuya Nishiyama , Hisanori Aikawa , Tadashi Kai , Toshihiko Nagase , Koji Ueda , Hiroaki Yoda
发明人： Katsuya Nishiyama , Hisanori Aikawa , Tadashi Kai , Toshihiko Nagase , Koji Ueda , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.
摘要翻译：根据一个实施例，磁阻元件包括具有垂直和可变磁化的存储层，具有垂直和不变磁化的参考层，在与参考层的磁化相反的方向上具有垂直和不变磁化的位移调整层存储层和参考层之间的第一非磁性层，以及参考层和位移调整层之间的第二非磁性层。参考层的开关磁场等于或小于存储层的切换磁场，并且参考层的磁性松弛常数大于存储层的磁性松弛常数。

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