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71. 发明申请

US20110241065A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110241065A1
公开(公告)日：2011-10-06
申请号：US13161172
申请日：2011-06-15
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/42
CPC分类号： H01L33/62 , H01L24/97 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/36 , H01L33/38 , H01L33/44 , H01L2924/13091 , H01L2924/00
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括包括多个化合物半导体层的发光结构，该化合物半导体层包括第一导电半导体层，有源层和第二导电半导体层; 多个化合物半导体层上的电极层; 以及包括突起并沿多个化合物半导体层的上表面的周边部分形成的沟道层。

72. 发明授权

US08022435B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08022435B2
公开(公告)日：2011-09-20
申请号：US12618490
申请日：2009-11-13
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L24/97 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/36 , H01L33/38 , H01L33/44 , H01L2924/13091 , H01L2924/00
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括包括多个化合物半导体层的发光结构，该化合物半导体层包括第一导电半导体层，有源层和第二导电半导体层; 多个化合物半导体层上的电极层; 以及包括突起并沿多个化合物半导体层的上表面的周边部分形成的沟道层。

73. 发明授权

US08748916B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08748916B2
公开(公告)日：2014-06-10
申请号：US13367072
申请日：2012-02-06
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/08
CPC分类号： H01L33/385 , H01L27/153 , H01L33/08 , H01L33/38 , H01L33/44
摘要： A light emitting device includes a conductive substrate, a plurality of light emitting cells disposed on the conductive substrate, wherein each of the plurality of light emitting device cells includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, a protective layer disposed to cover a side of the first semiconductor layer and a side of the active layer, and a first electrode for connecting the second semiconductor layers of more than one of the light emitting cells to each other, wherein the protective layer includes protruding portions extending to an inside of each of the light emitting cells from the side of the first semiconductor layer and the side of the active layer.
摘要翻译：发光器件包括导电衬底，设置在导电衬底上的多个发光单元，其中多个发光器件单元中的每一个包括第一半导体层，第二半导体层和第一半导体之间的有源层层和第二半导体层，设置成覆盖第一半导体层的一侧和有源层的一侧的保护层，以及用于将多于一个发光单元的第二半导体层彼此连接的第一电极其中，所述保护层包括从所述第一半导体层侧和所述有源层的侧面延伸到每个所述发光单元的内部的突出部。

74. 发明授权

US08450762B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08450762B2
公开(公告)日：2013-05-28
申请号：US13453531
申请日：2012-04-23
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L25/167 , H01L33/20 , H01L33/382 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes the light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers, a conductive support substrate electrically connected to the second conductive semiconductor layer, a contact electrically connected to the first conductive semiconductor layer, a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate, and an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.
摘要翻译：公开了一种发光器件，其制造方法，发光器件封装和照明系统。发光器件包括发光结构层，其包括第一导电半导体层，第二导电半导体层以及第一和第二导电半导体层之间的有源层，与第二导电半导体层电连接的导电支撑衬底，电连接到第一导电半导体层的接触，与接触件接触并介于接触件和导电支撑衬底之间的电介质材料，以及将接触与有源层，第二导电半导体层和导电支撑基板。

75. 发明授权

US08415705B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08415705B2
公开(公告)日：2013-04-09
申请号：US13161172
申请日：2011-06-15
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L24/97 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/36 , H01L33/38 , H01L33/44 , H01L2924/13091 , H01L2924/00
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括包括多个化合物半导体层的发光结构，该化合物半导体层包括第一导电半导体层，有源层和第二导电半导体层; 多个化合物半导体层上的电极层; 以及包括突起并沿多个化合物半导体层的上表面的周边部分形成的沟道层。

76. 发明授权

US08415700B2 Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system 有权
标题翻译：发光器件，制造发光器件的方法，发光器件封装和照明系统
公开(公告)号：US08415700B2
公开(公告)日：2013-04-09
申请号：US13033890
申请日：2011-02-24
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/387 , H01L33/40 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device. The light emitting device includes a conductive support substrate, an ohmic contact layer, a current blocking layer, a light emitting structure layer, an electrode, and a first current guide layer. The ohmic contact layer and the current blocking layer are disposed on the conductive support substrate. The light emitting structure layer is disposed on the ohmic contact layer and the current blocking layer. The electrode is disposed on the light emitting structure layer. At least a part of the electrode is overlapped with the current blocking layer. The first current guide layer is disposed between the current blocking layer and the conductive support substrate. At least a part of the first current guide layer is overlapped with the current blocking layer.
摘要翻译：提供了一种发光装置。发光器件包括导电支撑衬底，欧姆接触层，电流阻挡层，发光结构层，电极和第一电流引导层。欧姆接触层和电流阻挡层设置在导电支撑基板上。发光结构层设置在欧姆接触层和电流阻挡层上。电极设置在发光结构层上。电极的至少一部分与电流阻挡层重叠。第一电流引导层设置在电流阻挡层和导电支撑衬底之间。第一电流引导层的至少一部分与电流阻挡层重叠。

77. 发明申请

US20130049036A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20130049036A1
公开(公告)日：2013-02-28
申请号：US13367072
申请日：2012-02-06
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/08
CPC分类号： H01L33/385 , H01L27/153 , H01L33/08 , H01L33/38 , H01L33/44
摘要： A light emitting device includes a conductive substrate, a plurality of light emitting cells disposed on the conductive substrate, wherein each of the plurality of light emitting device cells includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, a protective layer disposed to cover a side of the first semiconductor layer and a side of the active layer, and a first electrode for connecting the second semiconductor layers of more than one of the light emitting cells to each other, wherein the protective layer includes protruding portions extending to an inside of each of the light emitting cells from the side of the first semiconductor layer and the side of the active layer.
摘要翻译：发光器件包括导电衬底，设置在导电衬底上的多个发光单元，其中多个发光器件单元中的每一个包括第一半导体层，第二半导体层和第一半导体之间的有源层层和第二半导体层，设置成覆盖第一半导体层的一侧和有源层的一侧的保护层，以及用于将多于一个发光单元的第二半导体层彼此连接的第一电极其中，所述保护层包括从所述第一半导体层侧和所述有源层的侧面延伸到每个所述发光单元的内部的突出部。

78. 发明申请

US20120299051A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的发光装置包装
公开(公告)号：US20120299051A1
公开(公告)日：2012-11-29
申请号：US13567446
申请日：2012-08-06
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/52
CPC分类号： H01L33/54 , F21K9/23 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , H01L33/12 , H01L33/405 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an electrode electrically connected to the first conductive semiconductor layer, a reflective layer under the second conductive semiconductor layer, a protective layer disposed around a lower surface of the second conductive semiconductor layer, and a buffer layer disposed on at least one of top and lower surfaces of the protective layer.
摘要翻译：公开了一种发光器件和具有该发光器件的发光器件封装。发光器件包括发光结构，其包括第一导电半导体层，第二导电半导体层和介于第一导电半导体层和第二导电半导体层之间的有源层，电连接到第一导电半导体层，在第二导电半导体层下面的反射层，设置在第二导电半导体层的下表面周围的保护层和设置在保护层的顶表面和下表面中的至少一个上的缓冲层。

79. 发明授权

US08319249B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08319249B2
公开(公告)日：2012-11-27
申请号：US12970701
申请日：2010-12-16
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L29/72
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/46
摘要： A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer, and a first conductive semiconductor layer under the active layer. The second electrode layer is formed on the light emitting structure. The insulating layer is formed along the circumference of the top surface of the light emitting structure. The protrusion protrudes from the undersurface of the insulating layer to the upper part of the first conductive semiconductor layer.
摘要翻译：一种半导体发光器件及其制造方法，其中半导体发光器件包括发光结构，第二电极层，绝缘层和突起。发光结构包括第二导电半导体层，第二导电半导体层下面的有源层以及有源层下面的第一导电半导体层。第二电极层形成在发光结构上。绝缘层沿着发光结构的顶表面的圆周形成。突起从绝缘层的下表面突出到第一导电半导体层的上部。

80. 发明授权

US08129727B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08129727B2
公开(公告)日：2012-03-06
申请号：US12508365
申请日：2009-07-23
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.
摘要翻译：一种半导体发光器件，包括第二电极层; 发光单元，包括在所述第二电极层的一部分下方的多个化合物半导体层; 在所述第二电极的另一部分下方的第一绝缘层; 静电保护单元，包括在第一绝缘层下面的多个化合物半导体层; 将所述发光单元电连接到所述静电保护单元的第一电极层; 以及将静电保护单元电连接到第二电极层的布线层。

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