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    • 73. 发明授权
    • Apparatus and method for simulating and optimizing a chemical mechanical
polishing system
    • 用于模拟和优化化学机械抛光系统的装置和方法
    • US5599423A
    • 1997-02-04
    • US497362
    • 1995-06-30
    • Norman W. ParkerRobert D. TollesHarry Q. Lee
    • Norman W. ParkerRobert D. TollesHarry Q. Lee
    • B24B37/04B24B49/00B24B51/00H01L21/00
    • B24B49/00B24B37/042B24B51/00
    • Apparatus and concomitant method for simulating a chemical mechanical polishing (CMP) system containing a polishing pad, a chuck for supporting a substrate, a positioner for positioning the polishing pad with respect to the substrate, a chuck rotator for rotating the chuck, and a polishing pad rotator for rotating the polishing pad. The CMP system simulation method comprises: defining polishing pad and substrate parameters; defining simulation parameters; determining, in response to said polishing pad, substrate and simulation parameters, a polishing result; and displaying the polishing result. Additionally, the simulation optimizes selected parameters to achieve a specified polishing non-uniformity across a substrate. Also, the simulation and optimization routines are interfaced to CMP system hardware to optimally control a substrate polishing process to achieve predetermined substrate polishing non-uniformity.
    • 用于模拟包含抛光垫的化学机械抛光(CMP)系统的装置和伴随方法,用于支撑基板的卡盘,用于将抛光垫相对于基板定位的定位器,用于旋转卡盘的卡盘旋转器和抛光 垫轮旋转器,用于旋转抛光垫。 CMP系统模拟方法包括:定义抛光垫和衬底参数; 定义模拟参数; 响应于所述抛光垫确定衬底和模拟参数抛光结果; 并显示抛光结果。 另外,模拟优化所选择的参数以在基板上实现特定的抛光不均匀性。 此外,仿真和优化例程与CMP系统硬件接口,以最佳地控制衬底抛光工艺以实现预定的衬底抛光不均匀性。
    • 74. 发明授权
    • Multiple-scan method for wafer particle analysis
    • 晶圆颗粒分析的多重扫描方法
    • US5422724A
    • 1995-06-06
    • US116232
    • 1993-08-31
    • Patrick D. KinneyYuri S. UritskyHarry Q. Lee
    • Patrick D. KinneyYuri S. UritskyHarry Q. Lee
    • G01B11/00G01N15/00G01R31/305G01R31/307H01J37/22H01L21/66
    • G01R31/305G01R31/307H01L22/20H01L22/12
    • A method for reducing targeting errors encountered when trying to locate contaminant particles in a high-magnification imaging device, based on estimates of the particle positions obtained from a scanning device. The method of the invention includes scanning a semiconductor wafer in a scanning device, then preferably moving the wafer to a different orientation, and scanning the wafer again, to obtain at least two sets of particle coordinates that may differ slightly because of uncertainties in the scanning process. The multiple sets of coordinates are averaged to reduce the targeting errors, but only after transforming the coordinates to a common coordinate system. The transformation step includes computing transformation parameters for each possible pair of particles detected in at least two scans, averaging the results, and then transforming all of the particle coordinates to the common coordinate system. Optionally, the method may include discarding any transformation parameters that deviate too far from the average, and then computing the average transformation parameters again.
    • 基于从扫描装置获得的粒子位置的估计,减少在高倍率成像装置中定位污染物颗粒时遇到的瞄准误差的方法。 本发明的方法包括在扫描装置中扫描半导体晶片,然后优选地将晶片移动到不同的取向,并再次扫描晶片,以获得由于扫描中的不确定性而可能略有不同的至少两组粒子坐标 处理。 对多组坐标进行平均以减少目标误差,但仅在将坐标转换为公共坐标系之后。 变换步骤包括计算在至少两次扫描中检测到的每个可能的一对颗粒的变换参数,对结果求平均值,然后将所有粒子坐标转换为公共坐标系。 可选地,该方法可以包括丢弃偏离平均值太远的任何变换参数,然后再次计算平均变换参数。
    • 75. 发明授权
    • Method of particle analysis on a mirror wafer
    • 在镜片上进行粒子分析的方法
    • US5267017A
    • 1993-11-30
    • US886541
    • 1992-05-20
    • Yuri S. UritskyHarry Q. LeePatrick D. KinneyKang-Ho Ahn
    • Yuri S. UritskyHarry Q. LeePatrick D. KinneyKang-Ho Ahn
    • G01R31/305G01R31/307G01B11/00
    • G01R31/305G01R31/307
    • A method for reducing targeting errors encountered when trying to locate contaminant particles in a high-magnification imaging device, based on estimates of the particle positions obtained from a scanning device. The method of the invention uses three techniques separately and in combination. The first technique includes selecting at least three reference particles, to provide multiple unique pairs of reference particles for computation of an averaged set of coordinate transformation parameters, used to transform particle position coordinates from the coordinate system of the scanning device to the coordinate system of the imaging device. The averaged transformation parameters result in much smaller targeting errors between the estimated and actual positions of the particles. The targeting errors are further reduced by the use of multiple scans of the scanning device. In a third technique, accumulated reference particle targeting errors observed in prior processing of other wafers are used to reduce these targeting errors when processing a new wafer.
    • 基于从扫描装置获得的粒子位置的估计,减少在高倍率成像装置中定位污染物颗粒时遇到的瞄准误差的方法。 本发明的方法分别使用三种技术组合。 第一技术包括选择至少三个参考粒子,以提供用于计算平均坐标变换参数集合的多个独特的参考粒子对,用于将粒子位置坐标从扫描装置的坐标系转换为坐标系的坐标系 成像装置。 平均变换参数导致粒子的估计位置和实际位置之间的目标误差小得多。 通过使用扫描设备的多次扫描,进一步减少了定位错误。 在第三种技术中,在处理新晶片时,使用在其它晶片的先前处理中观察到的累积参考粒子瞄准误差来减少这些瞄准误差。
    • 80. 发明申请
    • MULTIPLE MATCHING REFERENCE SPECTRA FOR IN-SITU OPTICAL MONITORING
    • 用于现场光学监测的多重匹配参考光谱
    • US20120100781A1
    • 2012-04-26
    • US13271023
    • 2011-10-11
    • Jimin ZhangZhihong WangHarry Q. LeeWen-Chiang Tu
    • Jimin ZhangZhihong WangHarry Q. LeeWen-Chiang Tu
    • B24B49/12
    • B24B37/013B24B49/12
    • A method of controlling polishing includes storing a plurality libraries, each library including a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching first reference spectrum from a first library from the plurality of libraries and finding a best matching second reference spectrum from a different second library from the plurality of libraries, determining a first value associated with the best matching first reference spectrum and determining a second value from the best matching second reference spectrum, and calculating a third value from the first value and the second value to generate a sequence of calculated third values. At least one of a polishing endpoint or an adjustment for a polishing rate can be determined based on the sequence of calculated third values.
    • 控制抛光的方法包括存储多个库,每个库包括多个参考光谱,抛光衬底,在抛光期间测量来自衬底的光的光谱序列,以及对于光谱序列的每个测量光谱,找到 从来自多个库的第一库中最佳匹配第一参考频谱,并从多个库中找到来自不同第二库的最佳匹配的第二参考频谱,确定与最佳匹配的第一参考频谱相关联的第一值并确定第二值 并且从第一值和第二值计算第三值以生成计算出的第三值的序列。 可以基于计算的第三值的顺序来确定抛光终点或抛光速率的调整中的至少一个。