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    • 71. 发明授权
    • On-chip balun and transceiver using the same and method for fabricating on-chip balun
    • 片上平衡 - 不平衡变压器和收发器采用相同的方法制造片上平衡 - 不平衡转换器
    • US07449974B2
    • 2008-11-11
    • US11330104
    • 2006-01-12
    • Jae-sup LeeDong-hyun LeeSeong-soo Lee
    • Jae-sup LeeDong-hyun LeeSeong-soo Lee
    • H03H5/00
    • H01F17/0013H01F2017/008
    • Provided are an on-chip balun, a transceiver using the on-chip balun, and a method for fabricating the on-chip balun. The on-chip balun includes: a first metal winding including a port grounded and a port to which an unbalanced signal is input; a second winding outputting an induced current generated by the first metal winding as two signals having about equal intensity and a phase difference of about 180°; and a ground shield positioned between the first and second metal windings and having a symmetric structure so as to generate a symmetric parasitic capacitance between the ground shield and the second metal winding. The ground shield can be inserted between the first and second metal windings to remove an asymmetrical parasitic capacitance so as to reduce a phase imbalance and a gain imbalance of an output value of the second metal winding. As a result, a highly balanced on-chip balun can be fabricated.
    • 提供了片上平衡 - 不平衡转换器,使用片上平衡 - 不平衡转换器的收发器以及制造片上平衡 - 不平衡转换器的方法。 片上平衡 - 不平衡变压器包括:第一金属绕组,其包括接地的端口和输入不平衡信号的端口; 输出由第一金属绕组产生的感应电流的第二绕组作为具有大约相同强度的两个信号和约180°的相位差; 以及位于第一和第二金属绕组之间并具有对称结构以便在接地屏蔽和第二金属绕组之间产生对称寄生电容的接地屏蔽。 接地屏蔽可以插入在第一和第二金属绕组之间以去除不对称的寄生电容,以便减少相位不平衡和第二金属绕组的输出值的增益不平衡。 因此,可以制造高度平衡的片上平衡 - 不平衡变压器。
    • 72. 发明授权
    • Dual-band voltage-controlled oscillator using bias switching and output-buffer multiplexing
    • 双频压控振荡器采用偏置开关和输出缓冲复用
    • US07414490B2
    • 2008-08-19
    • US11288212
    • 2005-11-29
    • Sang-yoon JeonHeung-bae LeeSeong-soo LeeJinup LimJoongho Choi
    • Sang-yoon JeonHeung-bae LeeSeong-soo LeeJinup LimJoongho Choi
    • H03B5/12
    • H03B5/1228H03B5/1209H03B5/1215H03B5/124
    • Disclosed is a dual-band voltage-controlled oscillator using bias switching and output-buffer multiplexing. The dual-band voltage-controlled oscillator includes a power supply unit for supplying a source voltage; plural voltage-controlled oscillation units for outputting different oscillation frequencies according to controls of a certain tuning voltage; plural bias units for generating driving voltages for driving the voltage-controlled oscillation units and supplying the driving voltages to the voltage-controlled oscillation units; and plural buffers for selectively outputting oscillation frequencies of the plural voltage-controlled oscillation units. The present invention implements the dual-band voltage-controlled oscillator through bias switching and output-buffer multiplexing, which brings an advantage of elimination of interference between output frequencies to enhance phase noise characteristics.
    • 公开了一种使用偏置开关和输出缓冲器复用的双频带压控振荡器。 双频带压控振荡器包括用于提供源电压的电源单元; 多个电压控制振荡单元,用于根据某个调谐电压的控制输出不同的振荡频率; 多个偏压单元,用于产生用于驱动压控振荡单元的驱动电压并将驱动电压提供给压控振荡单元; 以及用于选择性地输出多个压控振荡单元的振荡频率的多个缓冲器。 本发明通过偏置开关和输出缓冲多路复用来实现双频压控振荡器,其具有消除输出频率之间的干扰以增强相位噪声特性的优点。
    • 74. 发明授权
    • Small broadband monopole antenna having perpendicular ground plane with electromagnetically coupled feed
    • 具有电磁耦合馈电的垂直接地平面的小宽带单极天线
    • US07268730B2
    • 2007-09-11
    • US11376336
    • 2006-03-16
    • Ikmo ParkJong-ho JungYoung-min MoonSeong-soo LeeYoung-eil Kim
    • Ikmo ParkJong-ho JungYoung-min MoonSeong-soo LeeYoung-eil Kim
    • H01Q1/38
    • H01Q9/0407H01Q9/30
    • A small broadband monopole antenna having a perpendicular ground plane with an electromagnetically coupled feed is provided. The small broadband monopole antenna may be realized as a small antenna having a size of 0.085λ0×0.085λ0×0.085λ0 by positioning a folded strip line under a shorted square disc. A resonance of the shorted square disc may be coupled to a resonance of the square folded strip line so as to form a wide bandwidth of about 36.6% of a central frequency of 2.313 GHz based on a VSWR≦2. Also, rectangular slits may be inserted into the perpendicular ground plane to improve a distortion of a radiation pattern that forms on the perpendicular ground plane so as to reduce a backward radiation by 3 dBi or more. The small broadband monopole antenna exhibits a forward radiation pattern similar to that of a general monopole antenna and has a gain of about 2.6 dBi within a bandwidth.
    • 提供具有电磁耦合馈电的具有垂直接地平面的小宽带单极天线。 小型宽带单极天线可以通过定位来实现为具有大小为0.085λλ0.085λλ0.085λλ0<0的小天线 在短方形盘下的折叠带状线。 短路方形盘的谐振可以耦合到方形折叠带状线的谐振,从而基于VSWR <= 2形成约2.313GHz的中心频率的约36.6%的宽带宽。 此外,矩形狭缝可以插入到垂直接地平面中,以改善在垂直接地平面上形成的辐射图案的变形,以便将后向辐射减小3dBii或更大。 小宽带单极天线具有类似于一般单极天线的正向辐射图,并且在带宽内具有约2.6dBi的增益。
    • 78. 发明申请
    • On-chip balun and transceiver using the same and method for fabricating on-chip balun
    • 片上平衡 - 不平衡变压器和收发器采用相同的方法制造片上平衡 - 不平衡转换器
    • US20060202776A1
    • 2006-09-14
    • US11330104
    • 2006-01-12
    • Jae-sup LeeDong-hyun LeeSeong-soo Lee
    • Jae-sup LeeDong-hyun LeeSeong-soo Lee
    • H03H7/42
    • H01F17/0013H01F2017/008
    • Provided are an on-chip balun, a transceiver using the on-chip balun, and a method for fabricating the on-chip balun. The on-chip balun includes: a first metal winding including a port grounded and a port to which an unbalanced signal is input; a second winding outputting an induced current generated by the first metal winding as two signals having about equal intensity and a phase difference of about 180°; and a ground shield positioned between the first and second metal windings and having a symmetric structure so as to generate a symmetric parasitic capacitance between the ground shield and the second metal winding. The ground shield can be inserted between the first and second metal windings to remove an asymmetrical parasitic capacitance so as to reduce a phase imbalance and a gain imbalance of an output value of the second metal winding. As a result, a highly balanced on-chip balun can be fabricated.
    • 提供了片上平衡 - 不平衡转换器,使用片上平衡 - 不平衡转换器的收发器以及制造片上平衡 - 不平衡转换器的方法。 片上平衡 - 不平衡变压器包括:第一金属绕组,其包括接地的端口和输入不平衡信号的端口; 输出由第一金属绕组产生的感应电流的第二绕组作为具有大约相同强度的两个信号和约180°的相位差; 以及位于第一和第二金属绕组之间并具有对称结构以便在接地屏蔽和第二金属绕组之间产生对称的寄生电容的接地屏蔽。 接地屏蔽可以插入在第一和第二金属绕组之间以去除不对称的寄生电容,以便减少相位不平衡和第二金属绕组的输出值的增益不平衡。 因此,可以制造高度平衡的片上平衡 - 不平衡变压器。