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71. 发明授权

US08912533B2 Organic light emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US08912533B2
公开(公告)日：2014-12-16
申请号：US13488006
申请日：2012-06-04
申请人： Jung Hyun Son , Hoon Kim , Seung Kyu Park , Kie Hyun Nam , Byung Hee Kim
发明人： Jung Hyun Son , Hoon Kim , Seung Kyu Park , Kie Hyun Nam , Byung Hee Kim
IPC分类号： H01L51/52 , H01L27/32
CPC分类号： H01L51/5243 , H01L27/3244 , H01L51/5246 , H01L51/5259 , H01L2251/558
摘要： An organic light emitting display device which includes a base member; an organic light emitting display unit disposed on the base member and configured to generate an image; a sealing layer configured to seal the organic light emitting display unit; a capping substrate disposed on the sealing layer and having a plurality of metal layers, one of the metal layers being in contact with the sealing layer and having at least one groove; and a moisture absorbent provided in the groove.
摘要翻译：一种有机发光显示装置，包括：基底部件; 有机发光显示单元，设置在所述基底构件上，并被配置为产生图像; 被配置为密封有机发光显示单元的密封层; 封盖基板，设置在所述密封层上并且具有多个金属层，所述金属层中的一个与所述密封层接触并且具有至少一个凹槽; 以及设置在凹槽中的吸湿剂。

72. 发明授权

US08810745B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08810745B2
公开(公告)日：2014-08-19
申请号：US13536388
申请日：2012-06-28
申请人： Hoon Kim , Ki Chul Shin , Su Jeong Kim , Ho Kil Oh , Jae-Hoon Jung
发明人： Hoon Kim , Ki Chul Shin , Su Jeong Kim , Ho Kil Oh , Jae-Hoon Jung
IPC分类号： G02F1/136
CPC分类号： G02F1/13624 , G02F1/134336 , G02F1/136213 , G02F2001/134345
摘要： A liquid crystal display according to exemplary embodiments of the present invention is provided in which an additional storage capacitor is formed to a subpixel electrode connected to the dividing switching element, thereby increasing the total storage capacitance. Due to the additional storage capacitor, the kickback voltage difference between two subpixels that may be generated by the additional dividing switching element is eliminated such that the display quality deterioration has been improved by preventing the kickback voltage difference between the two subpixels.
摘要翻译：提供了根据本发明的示例性实施例的液晶显示器，其中附加的存储电容器形成到与分割开关元件连接的子像素电极，从而增加了总的存储电容。由于附加的存储电容器，可以消除由附加分割开关元件产生的两个子像素之间的反冲电压差，从而通过防止两个子像素之间的反冲电压差来提高显示质量劣化。

73. 发明授权

US08791014B2 Methods of forming copper-based conductive structures on semiconductor devices 有权
标题翻译：在半导体器件上形成铜基导电结构的方法
公开(公告)号：US08791014B2
公开(公告)日：2014-07-29
申请号：US13422439
申请日：2012-03-16
申请人： Xunyuan Zhang , Hoon Kim , Chanro Park
发明人： Xunyuan Zhang , Hoon Kim , Chanro Park
IPC分类号： H01L21/768
CPC分类号： H01L21/76879 , H01L21/28556 , H01L21/28562 , H01L21/31144 , H01L21/32134 , H01L21/76805 , H01L21/76816
摘要： Disclosed herein are various methods of forming copper-based conductive structures on semiconductor devices, such as transistors. In one example, the method involves performing a first etching process through a patterned metal hard mask layer to define an opening in a layer of insulating material, performing a second etching process through the opening in the layer of insulating material that exposes a portion of an underlying copper-containing structure, performing a wet etching process to remove the patterned metal hard mask layer, performing a selective metal deposition process through the opening in the layer of insulating material to selectively form a metal region on the copper-containing structure and, after forming the metal region, forming a copper-containing structure in the opening above the metal region.
摘要翻译：本文公开了在诸如晶体管的半导体器件上形成铜基导电结构的各种方法。在一个示例中，该方法包括通过图案化的金属硬掩模层执行第一蚀刻工艺以限定绝缘材料层中的开口，通过绝缘材料层中的开口执行第二蚀刻工艺，该开口暴露一部分下面的含铜结构，进行湿蚀刻处理以去除图案化的金属硬掩模层，通过绝缘材料层中的开口进行选择性金属沉积工艺，以选择性地在含铜结构上形成金属区域，之后形成金属区域，在金属区域上方的开口中形成含铜结构体。

74. 发明授权

US08722534B2 Method for reducing wettability of interconnect material at corner interface and device incorporating same 有权
标题翻译：用于降低角接合处的互连材料的润湿性和结合其的装置的方法
公开(公告)号：US08722534B2
公开(公告)日：2014-05-13
申请号：US13561195
申请日：2012-07-30
申请人： Xunyuan Zhang , Hoon Kim , Vivian W. Ryan
发明人： Xunyuan Zhang , Hoon Kim , Vivian W. Ryan
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76858 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect structure includes forming a recess in a dielectric layer of a substrate, forming a first transition metal layer in the recess on corner portions of the recess, and forming a second transition metal layer in the recess over the first transition metal layer to line the recess. The method further includes filling the recess with a fill layer and annealing the substrate so that the first transition metal layer and the second transition metal layer form an alloy portion proximate the corner portions during the annealing, the alloy portion having a reduced wettability for a material of the fill layer than the second transition metal. Additionally, the method includes polishing the substrate to remove portions of the fill layer extending above the recess.
摘要翻译：形成互连结构的方法包括在基板的电介质层中形成凹部，在凹部的凹部中的凹部中形成第一过渡金属层，并在第一过渡金属的凹部中形成第二过渡金属层层到凹槽。该方法还包括用填充层填充凹槽并退火基板，使得第一过渡金属层和第二过渡金属层在退火期间在拐角部分附近形成合金部分，合金部分对于材料的润湿性降低的填充层比第二过渡金属。另外，该方法包括抛光衬底以去除在凹部上方延伸的填充层的部分。

75. 发明授权

US08552505B1 Integrated circuits having improved metal gate structures and methods for fabricating same 有权
标题翻译：具有改进的金属栅结构的集成电路及其制造方法
公开(公告)号：US08552505B1
公开(公告)日：2013-10-08
申请号：US13445719
申请日：2012-04-12
申请人： Hoon Kim , Kisik Choi
发明人： Hoon Kim , Kisik Choi
IPC分类号： H01L21/70
CPC分类号： H01L29/66545 , H01L21/823842 , H01L29/4966
摘要： Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a PFET trench in a PFET region and an NFET trench in an NFET region of an interlayer dielectric material on a semiconductor surface. The NFET trench is partially filled with an N-type work function metal layer to define an inner cavity. The PFET trench and the inner cavity in the NFET trench are partially filled with a P-type work function metal layer to define a central void in each trench. In the method, the central voids are filled with a metal fill to form metal gate structures. A single recessing process is then performed to recess portions of each metal gate structure within each trench to form a recess in each trench above the respective metal gate structure.
摘要翻译：提供了用于制造集成电路的集成电路和方法。在一个实施例中，制造集成电路的方法包括在半导体表面上的层间绝缘材料的NFET区域中的PFET区域中形成PFET沟槽和NFET沟槽。 NFET沟槽部分地填充有N型功函数金属层以限定内腔。 NFET沟槽中的PFET沟槽和内腔部分地填充有P型功函数金属层，以在每个沟槽中限定中心空隙。在该方法中，中心空隙填充有金属填充物以形成金属栅极结构。然后执行单个凹陷处理以在每个沟槽内凹入每个金属栅极结构的部分，以在相应的金属栅极结构上方的每个沟槽中形成凹陷。

76. 发明授权

US08513884B2 Flat panel display apparatus and organic light-emitting display apparatus 有权
标题翻译：平板显示装置和有机发光显示装置
公开(公告)号：US08513884B2
公开(公告)日：2013-08-20
申请号：US12976937
申请日：2010-12-22
申请人： Kie-Hyun Nam , Hoon Kim , Dong-Ki Lee , Jin-Wook Seong , Hong Chen , Jung-Mi Choi , Ji-Sil Lee
发明人： Kie-Hyun Nam , Hoon Kim , Dong-Ki Lee , Jin-Wook Seong , Hong Chen , Jung-Mi Choi , Ji-Sil Lee
IPC分类号： H05B33/04
CPC分类号： H01L51/5243 , H01L51/5246 , H01L51/5253
摘要： A flat panel display apparatus includes a substrate; a display unit which is formed on the substrate and displays an image; a metal sheet which faces towards the substrate; a sealant which fills the entire free space between the substrate and the metal sheet and seals the space between the substrate and the metal sheet; and a polymer layer which is disposed on a surface of the metal sheet and has a lower thermal expansion coefficient than the metal sheet. An organic light-emitting display (OLED) apparatus including a sealant which fills an entire space between a substrate and a metal sheet is also disclosed.
摘要翻译：平板显示装置包括：基板; 显示单元，其形成在所述基板上并显示图像; 面向基板的金属板; 填充基板和金属板之间的整个自由空间并密封基板和金属板之间的空间的密封剂; 以及聚合物层，其设置在金属片的表面上并且具有比金属片低的热膨胀系数。还公开了一种包括填充基板和金属片之间的整个空间的密封剂的有机发光显示器（OLED）设备。

77. 发明授权

US08487531B2 Encapsulation sheet, flat panel display device using the same, and method of manufacturing the flat panel display device 有权
标题翻译：封装片，使用其的平板显示装置，以及制造平板显示装置的方法
公开(公告)号：US08487531B2
公开(公告)日：2013-07-16
申请号：US13244168
申请日：2011-09-23
申请人： Jung-Hyun Son , Hoon Kim
发明人： Jung-Hyun Son , Hoon Kim
IPC分类号： H01J1/62
CPC分类号： H01L51/5259 , H01L51/524 , H01L51/5246 , Y10T428/24802
摘要： An encapsulation sheet, a flat panel display device, and a method of manufacturing a flat panel display device are disclosed. The method includes: forming a getter on a first sheet; forming a sealant having a space corresponding to the shape of the getter on a second sheet; forming an encapsulation sheet by folding the first sheet and the second sheet to enter the getter into the space; and attaching the encapsulation sheet on a substrate on which a display unit is formed. When the flat panel display device is manufactured using the above method, the folded sealant and the getter are simultaneously mounted on the substrate, and thus, a complicated conventional process of mounting the getter in a vacuum state is unnecessary.
摘要翻译：公开了一种封装片，平板显示装置和制造平板显示装置的方法。该方法包括：在第一片上形成吸气剂; 在第二片材上形成具有与吸气剂的形状对应的空间的密封剂; 通过折叠第一片和第二片形成封装片，以将吸气剂进入该空间; 以及将封装片附着在其上形成有显示单元的基板上。当使用上述方法制造平板显示装置时，折叠的密封剂和吸气剂同时安装在基板上，因此不需要将吸气剂安装在真空状态的复杂的常规方法。

78. 发明申请

US20130056806A1 UNIT PIXEL OF COLOR IMAGE SENSOR AND PHOTO DETECTOR THEREOF 有权
标题翻译：彩色图像传感器及其检测器的单元像素
公开(公告)号：US20130056806A1
公开(公告)日：2013-03-07
申请号：US13224876
申请日：2011-09-02
申请人： Hoon Kim
发明人： Hoon Kim
IPC分类号： H01L31/113
CPC分类号： H01L27/14645
摘要： A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film having one surface thereof being in contact with the light-absorbing part; a source being in contact with one side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; a drain facing the source so as to be in contact with the other side of the other surface of the oxide film and separated from the light-absorbing part with the oxide film therebetween; and a channel formed between the source and the drain and configured to form flow of an electric current between the source and drain.
摘要翻译：公开了图像传感器和光电检测器的单位像素。本发明的光电检测器可以包括：光吸收部，被配置为通过以浮动结构形成来吸收光; 氧化膜，其一个表面与光吸收部分接触; 源极与氧化膜的另一个表面的一侧接触并且与光吸收部分分离，其间具有氧化膜; 漏极，面对源极，以与氧化膜的另一表面的另一侧接触，并与其间的氧化膜与光吸收部分分离; 以及形成在源极和漏极之间并且被配置为在源极和漏极之间形成电流的沟道的沟道。

79. 发明申请

US20130026503A1 LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管显示及其制造方法
公开(公告)号：US20130026503A1
公开(公告)日：2013-01-31
申请号：US13474659
申请日：2012-05-17
申请人： Jung-Hyun Son , Hoon Kim , Byung-Hee Kim
发明人： Jung-Hyun Son , Hoon Kim , Byung-Hee Kim
IPC分类号： H01L33/62
CPC分类号： H01L51/5243 , H01L27/3244 , H01L51/5246
摘要： An organic light emitting diode (OLED) display includes a substrate, an OLED on the substrate, and an encapsulation layer on the substrate with the OLED therebetween. The encapsulation layer includes a plurality of metal layers. Two of the plurality of metal layers are directly attached to each other.
摘要翻译：有机发光二极管（OLED）显示器包括衬底，衬底上的OLED以及衬底上的封装层，其间具有OLED。封装层包括多个金属层。多个金属层中的两个彼此直接相连。

80. 发明授权

US08330889B2 Thin film transistor substrate, liquid crystal display having the same, and method of manufacturing the same 有权
标题翻译：薄膜晶体管基板，具有相同的液晶显示器及其制造方法
公开(公告)号：US08330889B2
公开(公告)日：2012-12-11
申请号：US13217054
申请日：2011-08-24
申请人： Yoon-Sung Um , Hoon Kim , Hye-Ran You , Jae-Jin Lyu , Seung-Beom Park
发明人： Yoon-Sung Um , Hoon Kim , Hye-Ran You , Jae-Jin Lyu , Seung-Beom Park
IPC分类号： G02F1/1368 , H01L21/336 , H01L27/15
CPC分类号： H01L29/6675 , G02F1/13624 , G02F2001/134345 , H01L27/1288
摘要： In a thin film transistor, first and second thin film transistors are connected to an Nth gate line and an Mth data line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode connected to an (N+1)th gate line, a semiconductor layer overlapping with the gate electrode, a source electrode connected to the second sub pixel electrode and partially overlapping with the gate electrode, and a drain electrode facing the source electrode. A first auxiliary electrode is connected to the drain electrode and arranged on the same layer as the first and second sub pixel electrodes. An opposite electrode is arranged on the same layer as the gate line and at least partially overlaps with the first auxiliary electrode with at least one insulating layer disposed therebetween.
摘要翻译：在薄膜晶体管中，第一和第二薄膜晶体管连接到第N栅极线和第M数据线，第一和第二子像素电极分别连接到第一和第二薄膜晶体管。第三薄膜晶体管包括连接到第（N + 1）栅极线的栅电极，与栅电极重叠的半导体层，连接到第二子像素电极并与栅电极部分重叠的源极，漏电极面对源电极。第一辅助电极连接到漏电极并且设置在与第一和第二子像素电极相同的层上。相对电极布置在与栅极线相同的层上，并且与第一辅助电极至少部分重叠，并且其间设置有至少一个绝缘层。

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