会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 79. 发明申请
    • Resistive Random Access Memory Cells Having Doped Current Limiting layers
    • 具有掺杂电流限制层的电阻随机存取存储器单元
    • US20140124725A1
    • 2014-05-08
    • US13671824
    • 2012-11-08
    • INTERMOLECULAR, INC.
    • David ChiVidyut GopalMinh Huu LeMinh Anh NguyenDipankar PramanikMilind Weling
    • H01L45/00
    • H01L45/145G11C13/0007G11C2213/32H01L27/2409H01L27/2463H01L45/08H01L45/12H01L45/1233H01L45/14H01L45/146H01L45/1616
    • Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature annealing. In some embodiments, the breakdown voltage of a current limiting layer may be at least about 8V. Some examples of such current limiting layers include titanium oxide doped with niobium, tin oxide doped with antimony, and zinc oxide doped with aluminum. Dopants and base materials may be deposited as separate sub-layers and then redistributed by annealing or may be co-deposited using reactive sputtering or co-sputtering. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layer while maintaining their performance.
    • 提供了诸如电阻随机存取存储器(ReRAM)单元的半导体器件,其包括由掺杂的金属氧化物和/或氮化物形成的限流层。 这些限流层可具有至少约1欧姆 - 厘米的电阻率。 即使当这些层受到强电场和/或高温退火时,也保持该电阻率水平。 在一些实施例中,限流层的击穿电压可以为至少约8V。 这种电流限制层的一些实例包括掺杂有铌的氧化钛,掺杂有锑的氧化锡和掺杂有铝的氧化锌。 掺杂剂和基材可以作为单独的子层沉积,然后通过退火重新分布,或者可以使用反应溅射或共溅射共沉积。 层的高电阻率允许在保持其性能的同时缩小包括这些层的半导体器件的尺寸。