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71. 发明授权

US07989859B2 Backside illuminated imaging sensor with silicide light reflecting layer 有权
标题翻译：具有硅化物光反射层的背面照明成像传感器
公开(公告)号：US07989859B2
公开(公告)日：2011-08-02
申请号：US12142678
申请日：2008-06-19
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes
IPC分类号： H01L31/062
CPC分类号： H01L27/14625 , H01L27/1464 , H01L27/14643
摘要： A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.
摘要翻译：背面照明成像传感器包括半导体层，金属互连层和硅化物光反射层。半导体层具有前表面和后表面。在半导体层内形成包括光电二极管区域的成像像素。金属互连层电耦合到光电二极管区域，并且硅化物光反射层耦合在金属互连层和半导体层的前表面之间。在操作中，光电二极管区域从半导体层的背面接收光，其中接收的光的一部分通过光电二极管区域传播到硅化物光反射层。硅化物光反射层被配置为反射从光电二极管区域接收的光的部分。

72. 发明申请

US20100323470A1 BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES 有权
标题翻译：具有深层反光透镜的背面照明图像传感器
公开(公告)号：US20100323470A1
公开(公告)日：2010-12-23
申请号：US12853847
申请日：2010-08-10
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
IPC分类号： H01L31/0232
CPC分类号： H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
摘要翻译：使用具有前侧和后侧的半导体层形成像素阵列，通过该半导体层接收入射光。每个像素通常包括形成在半导体层中的感光区域和与感光区域相邻形成的沟槽。沟槽使得入射光被引导离开沟槽并朝向光敏区域。

73. 发明授权

US07800192B2 Backside illuminated image sensor having deep light reflective trenches 有权
标题翻译：具有深光反射沟槽的背面照明图像传感器
公开(公告)号：US07800192B2
公开(公告)日：2010-09-21
申请号：US12204743
申请日：2008-09-04
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
IPC分类号： H01L31/00
CPC分类号： H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
摘要翻译：使用具有用于接收入射光的前侧和后侧的基板形成像素阵列。每个像素通常包括包括在基板的前侧中的金属化层，形成在基板的背面中的感光区域和在基板的背面中的感光区域周围形成的沟槽。沟槽使得入射光被引导离开沟槽并朝向光敏区域。

74. 发明申请

US20090200625A1 BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES 有权
标题翻译：具有深层反光透镜的背面照明图像传感器
公开(公告)号：US20090200625A1
公开(公告)日：2009-08-13
申请号：US12204743
申请日：2008-09-04
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
摘要翻译：使用具有用于接收入射光的前侧和后侧的基板形成像素阵列。每个像素通常包括包括在基板的前侧中的金属化层，形成在基板的背面中的感光区域和在基板的背面中的感光区域周围形成的沟槽。沟槽使得入射光被引导离开沟槽并朝向光敏区域。

75. 发明授权

US08658956B2 Trench transfer gate for increased pixel fill factor 有权
标题翻译：沟槽传输门，用于增加像素填充因子
公开(公告)号：US08658956B2
公开(公告)日：2014-02-25
申请号：US12582585
申请日：2009-10-20
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion.
摘要翻译：图像传感器提供高可扩展性和减少图像滞后。传感器包括具有形成在图像传感器的基板中的第一光电二极管区域的第一成像像素。传感器还包括耦合到第一光电二极管区域的第一垂直传输晶体管。第一垂直传输晶体管可用于建立有源通道。有源沟道通常沿着第一垂直传输晶体管的长度延伸，并将第一光电二极管区域耦合到浮动扩散。

76. 发明授权

US08183510B2 Image sensor with buried self aligned focusing element 有权
标题翻译：具有埋入自对准聚焦元件的图像传感器
公开(公告)号：US08183510B2
公开(公告)日：2012-05-22
申请号：US12559307
申请日：2009-09-14
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Ashish Shah , Howard E. Rhodes
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Ashish Shah , Howard E. Rhodes
IPC分类号： H01L27/00 , H01L31/00 , H01J5/16
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643
摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.
摘要翻译：图像传感器包括光学传感器区域，电介质和金属层的堆叠以及嵌入层。光学传感器设置在半导体衬底内。电介质层和金属层堆叠在光学传感器区域上方的半导体衬底的前侧。嵌入式聚焦层设置在由支撑栅格支撑的背面照明（BSI）图像传感器或由半导体衬底组成的支撑栅格上的半导体衬底的背面。

77. 发明申请

US20090200622A1 SELF-ALIGNED FILTER FOR AN IMAGE SENSOR 有权
标题翻译：用于图像传感器的自对准滤波器
公开(公告)号：US20090200622A1
公开(公告)日：2009-08-13
申请号：US12029392
申请日：2008-02-11
申请人： Hsin-Chih Tai , Duli Mao , Vincent Venezia , WeiDong Qian , Ashish Shah , Howard E. Rhodes
发明人： Hsin-Chih Tai , Duli Mao , Vincent Venezia , WeiDong Qian , Ashish Shah , Howard E. Rhodes
IPC分类号： H01L31/00 , G01T1/24
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.
摘要翻译：图像传感器包括设置在半导体衬底中的至少一个感光元件。金属导体可以设置在半导体衬底上。过滤器可以设置在至少两个单独的金属导体之间，并且微透镜可以设置在过滤器上。可以在金属导体和半导体衬底之间和/或各个金属导体之间设置绝缘体材料。可以去除绝缘体材料，使得过滤器可以设置在半导体衬底上。

78. 发明申请

US20130009043A1 IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE 有权
标题翻译：具有补充电容耦合节点的图像传感器
公开(公告)号：US20130009043A1
公开(公告)日：2013-01-10
申请号：US13619879
申请日：2012-09-14
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
IPC分类号： H01L31/113 , H01L27/148
CPC分类号： H04N5/35509 , H04N5/3559 , H04N5/3597 , H04N5/37452 , H04N5/376
摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.
摘要翻译：图像传感器包括像素阵列，位线，补充电容节点线和控制电路。像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。位线被耦合以选择性地进行从第一组像素单元输出的图像数据。辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。

79. 发明申请

US20120153123A1 IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE 有权
标题翻译：具有补充电容耦合节点的图像传感器
公开(公告)号：US20120153123A1
公开(公告)日：2012-06-21
申请号：US12972188
申请日：2010-12-17
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H04N5/35509 , H04N5/3559 , H04N5/3597 , H04N5/37452 , H04N5/376
摘要： An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.
摘要翻译：图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。位线被耦合以选择性地进行从第一组像素单元输出的图像数据。辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。

80. 发明授权

US08187909B2 Backside illuminated image sensor having deep light reflective trenches 有权
标题翻译：具有深光反射沟槽的背面照明图像传感器
公开(公告)号：US08187909B2
公开(公告)日：2012-05-29
申请号：US12853847
申请日：2010-08-10
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687 , H01L27/14689
摘要： An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
摘要翻译：使用具有前侧和后侧的半导体层形成像素阵列，通过该半导体层接收入射光。每个像素通常包括形成在半导体层中的感光区域和与感光区域相邻形成的沟槽。沟槽使得入射光被引导离开沟槽并朝向光敏区域。

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