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71. 发明授权

US06461230B1 Chemical-mechanical polishing method 有权
标题翻译：化学机械抛光方法
公开(公告)号：US06461230B1
公开(公告)日：2002-10-08
申请号：US09689045
申请日：2000-10-12
申请人： Teng-Chun Tsai , Hsueh-Chung Chen , Ming-Sheng Yang
发明人： Teng-Chun Tsai , Hsueh-Chung Chen , Ming-Sheng Yang
IPC分类号： B24B100
CPC分类号： B24B37/04 , B24B57/02 , C09G1/02 , H01L21/3212 , H01L21/76807
摘要： A method for changing the polishing selectivity ratio of slurry used in chemical-mechanical polishing. Barrier slurry and a diluent are mixed together at different ratios to produce a mixture containing different amounts of solvent, chemicals and polishing particles. Hence, a variety of polishing selectivity ratios between copper film or barrier layer and other materials is obtained. The mixture is transported to the polishing pad of a polishing station to carry out chemical-mechanical polishing.
摘要翻译：改变化学机械抛光中使用的浆料的抛光选择率的方法。阻挡浆料和稀释剂以不同的比例混合在一起以产生含有不同量溶剂，化学品和抛光颗粒的混合物。因此，可以获得铜膜或阻挡层与其它材料之间的各种抛光选择率。将混合物输送到抛光站的抛光垫以进行化学机械抛光。

72. 发明授权

US06403469B1 Method of manufacturing dual damascene structure 失效
标题翻译：双镶嵌结构的制造方法
公开(公告)号：US06403469B1
公开(公告)日：2002-06-11
申请号：US09660071
申请日：2000-09-12
申请人： Teng-Chun Tsai , Hsueh-Chung Chen , Ming-Sheng Yang
发明人： Teng-Chun Tsai , Hsueh-Chung Chen , Ming-Sheng Yang
IPC分类号： H01L214763
CPC分类号： H01L21/7684
摘要： A method of producing a dual damascene structure. A substrate is provided and an insulation layer is formed over the substrate. A dual damascene opening is formed in the insulation layer. A liner layer is formed over the exposed surface of the dual damascene opening. Metallic material is deposited over the substrate filling the dual damascene opening to form a metallic layer. A cap layer is formed over the metallic layer. A chemical-mechanical polishing operation is carried out to polish the cap layer using a metal-reactive solution or a cap-layer-reactive solution. The polishing operation continues until the cap layer outside the dual damascene opening is completely removed and the metallic layer is exposed. A portion of the cap layer remains above the dual damascene opening. Using the retained cap layer as a protective layer for the metallic layer, the metallic layer outside the dual damascene opening is removed by polishing until the liner layer is exposed. Lastly, the liner layer is removed to form a slightly protruding metal line structure.
摘要翻译：一种制造双镶嵌结构的方法。提供衬底并且在衬底上形成绝缘层。在绝缘层中形成双镶嵌开口。在双镶嵌开口的暴露表面上形成衬里层。金属材料沉积在填充双镶嵌开口的基底上以形成金属层。在金属层上形成覆盖层。进行化学机械抛光操作以使用金属反应性溶液或盖层反应性溶液来抛光盖层。抛光操作继续，直到双镶嵌开口外的盖层被完全去除并且金属层被暴露。盖层的一部分保留在双镶嵌开口的上方。使用保留的盖层作为金属层的保护层，通过抛光除去双镶嵌开口外侧的金属层直到衬里层露出。最后，去除衬里层以形成稍微突出的金属线结构。

73. 发明授权

US06239017B1 Dual damascene CMP process with BPSG reflowed contact hole 有权
标题翻译：双镶嵌CMP工艺与BPSG回流接触孔
公开(公告)号：US06239017B1
公开(公告)日：2001-05-29
申请号：US09156357
申请日：1998-09-18
申请人： Chine-Gie Lou , Hsueh-Chung Chen
发明人： Chine-Gie Lou , Hsueh-Chung Chen
IPC分类号： H01L214763
CPC分类号： H01L21/76828 , H01L21/31612 , H01L21/31625 , H01L21/76804 , H01L21/76807 , H01L2221/1036
摘要： An improved and new process for fabricating a planarized dual damascene contact hole and trench structure, wherein the contact holes have tapered sidewalls, has been developed. The dual damascene contact hole and trench are formed in a three layer insulator structure, in which the middle layer is a doped silicon oxide having a lower reflow temperature than the undoped silicon oxide layers forming the top and bottom layers. The contact holes are etched through the doped silicon oxide layer and the bottom undoped silicon oxide layer. The trenches are etched through the top undoped silicon oxide layer. After etching tapered sidewalls are formed at the contact holes by reflow of the doped silicon oxide through which the holes are etched.
摘要翻译：已经开发了一种用于制造平面化双镶嵌接触孔和沟槽结构的改进和新工艺，其中接触孔具有锥形侧壁。双镶嵌接触孔和沟槽形成为三层绝缘体结构，其中中间层是具有比形成顶层和底层的未掺杂氧化硅层低的回流温度的掺杂氧化硅。通过掺杂氧化硅层和底部未掺杂的氧化硅层蚀刻接触孔。通过顶部未掺杂的氧化硅层蚀刻沟槽。蚀刻之后，通过掺杂氧化硅的回流在接触孔处形成锥形侧壁，通过该掺杂氧化硅蚀刻孔。

74. 发明授权

US06238997B1 Method of fabricating shallow trench isolation 失效
标题翻译：浅沟槽隔离的制作方法
公开(公告)号：US06238997B1
公开(公告)日：2001-05-29
申请号：US09237162
申请日：1999-01-25
申请人： Hsueh-Chung Chen , Chien-Hung Chen
发明人： Hsueh-Chung Chen , Chien-Hung Chen
IPC分类号： H01L2176
CPC分类号： H01L21/76229
摘要： A method of fabricating a shallow trench isolation. A pad oxide layer, a mask layer, an oxide layer, and a polysilicon layer are formed over a substrate. A trench is formed in order to define active regions of the substrate. An oxide layer is filled in the trenches. There is a high etching selectivity for etching the oxide layer and the polysilicon layer. Thus, the polysilicon layer can be used as an etching stop layer. The polishing etching rates of the polysilicon layer and the silicon oxide layer are close during a chemical-mechanical polishing process. In this manner, a smooth surface over the active regions can be formed. Polishing and etching processes are performed in order to form a shallow trench isolation.
摘要翻译：制造浅沟槽隔离的方法。在衬底上形成衬垫氧化物层，掩模层，氧化物层和多晶硅层。形成沟槽以便限定衬底的有源区。氧化层填充在沟槽中。蚀刻氧化物层和多晶硅层的蚀刻选择性高。因此，多晶硅层可以用作蚀刻停止层。在化学机械抛光过程中，多晶硅层和氧化硅层的抛光蚀刻速率接近。以这种方式，可以形成活性区域上的平滑表面。进行抛光和蚀刻工艺以形成浅沟槽隔离。

75. 发明授权

US06184130B2 Silicide glue layer for W-CVD plug application 失效
公开(公告)号：US06184130B2
公开(公告)日：2001-02-06
申请号：US08965313
申请日：1997-11-06
申请人： Tzu-Kun Ku , Hsueh-Chung Chen , Chine-Gie Lou
发明人： Tzu-Kun Ku , Hsueh-Chung Chen , Chine-Gie Lou
IPC分类号： H01L2144
CPC分类号： H01L21/76876 , H01L21/76843 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A new method of tungsten plug metallization using a silicide glue layer is described. Semiconductor device structures are provided in and on a semiconductor substrate. An insulating layer is provided covering the semiconductor device structures wherein a contact opening is made through the insulating layer to one of the semiconductor device structures. A silicide layer is deposited conformally over the surface of the insulating layer and within the contact opening as a combined ohmic contact and glue layer. In a first embodiment, a tungsten layer is deposited overlying the silicide layer. The tungsten layer not within the contact opening is removed to complete the formation of the tungsten plug metallization. In a second embodiment, the silicide layer not within the contact opening is selectively removed and a tungsten layer is selectively deposited overlying the silicide layer within the contact opening to complete formation of the tungsten plug metallization in the fabrication of an integrated circuit.

76. 发明授权

US6099705A Physical vapor deposition device for forming a uniform metal layer on a semiconductor wafer 有权
标题翻译：用于在半导体晶片上形成均匀金属层的物理气相沉积装置
公开(公告)号：US6099705A
公开(公告)日：2000-08-08
申请号：US391323
申请日：1999-09-08
申请人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
发明人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
IPC分类号： C23C14/35 , C23C14/38 , C23C14/40 , C23C14/42 , C23C14/44
CPC分类号： C23C14/35
摘要： A physical vapor deposition device comprises a vacuum chamber in which Ar ions are generated, a wafer chuck for holding a circular-shaped semiconductor wafer, a circular-shaped metal target above the wafer, an annular metal coil between the metal target and the wafer and made of the same material as the metal target, and a voltage controller for supplying voltage to the metal target, the wafer chuck and the metal coil. During a PVD processing, the voltage controller generates voltage biases between the metal target and the wafer chuck and between the metal coil and wafer chuck. That causes Ar ions to bombard the metal target to release metal atoms sputtering onto the center portion of the wafer, and causes Ar ions to bombard the metal coil to release the metal atoms sputtering onto the peripheral portion of the wafer so as to create a uniform metal layer on the wafer.
摘要翻译：物理气相沉积装置包括其中产生Ar离子的真空室，用于保持圆形半导体晶片的晶片卡盘，晶片上方的圆形金属靶，金属靶和晶片之间的环形金属线圈，以及由与金属靶相同的材料制成，以及用于向金属靶，晶片卡盘和金属线圈提供电压的电压控制器。在PVD处理期间，电压控制器在金属靶和晶片卡盘之间以及金属线圈和晶片卡盘之间产生电压偏压。这导致Ar离子轰击金属靶，释放金属原子溅射到晶片的中心部分，并导致Ar离子轰击金属线圈，以将金属原子溅射到晶片的周边部分，从而形成均匀的晶圆上的金属层。

77. 发明授权

US6093089A Apparatus for controlling uniformity of polished material 有权
标题翻译：用于控制抛光材料均匀性的装置
公开(公告)号：US6093089A
公开(公告)日：2000-07-25
申请号：US236522
申请日：1999-01-25
申请人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
发明人： Hsueh-Chung Chen , Juan-Yuan Wu , Water Lur
IPC分类号： B24B41/06 , B24B49/16 , B24B7/22
CPC分类号： B24B37/30 , B24B41/06 , B24B49/16
摘要： An apparatus for controlling a uniformity of a polished material is described. An air bag comprises a plurality of tubular rings. An air-bag manifold controller is connected to the tubular rings. The air-bag manifold controller controls inflation and deflation of the tubular rings in order to draw up the polished material and control pressure difference between different areas of the polished material.
摘要翻译：描述了一种用于控制抛光材料的均匀性的装置。气囊包括多个管状环。气囊歧管控制器连接到管状环。气囊歧管控制器控制管状环的膨胀和放气，以便画出抛光的材料并控制抛光材料的不同区域之间的压力差。

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