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    • 74. 发明授权
    • Process for cleaning exhaust gas using lambda control
    • 使用λ控制来清洁排气的过程
    • US06550307B1
    • 2003-04-22
    • US09455397
    • 1999-12-06
    • Hong ZhangGerd Roesel
    • Hong ZhangGerd Roesel
    • F02D4114
    • F02D41/1441F02D41/2438F02D41/2454F02D41/2474
    • A process for cleaning exhaust gas flow from an internal combustion engine using a catalyst, a lambda probe is disposed in the exhaust gas flow upstream from the catalyst and is connected to a controller that actuates the lambda probe, the controller receives a raw signal output from the lambda probe and forms a measurement signal that is supplied to control the internal combustion engine. The process includes regulating operation of the internal combustion engine such that a predetermined value of the lambda probe corresponds to a certain level of the measurement signal. Trimming the certain level of the measurement signal by a set value determined with an additional measuring pickup located downstream of the catalyst is performed, the trimming corrects the certain level of the measurement signal that corresponds to the predetermined value of the lambda probe. Switching the controller to a test mode in predetermined states of operation by the internal combustion engine and determining an actual value of a measurement signal falsification developed in the controller is performed. Compensating the measurement signal inversely to the actual value of the measurement signal falsification takes place. Varying the set value inversely to the actual value of the measurement signal falsification is performed.
    • 用于使用催化剂清洗来自内燃机的废气流的方法,λ探针设置在催化剂上游的排气流中,并连接到致动λ探针的控制器,控制器接收从 λ探针并形成用于控制内燃机的测量信号。 该过程包括调节内燃机的操作,使得λ探针的预定值对应于测量信号的一定水平。 执行测量信号的一定水平,用位于催化剂下游的附加测量拾取器确定的设定值进行修整,校正与λ探针的预定值对应的测量信号的一定水平。 执行由内燃机在预定操作状态下将控制器切换到测试模式并确定在控制器中产生的测量信号伪造的实际值。 将测量信号与测量信号的实际值相反地进行伪造。 将设定值与测量信号的实际值相反,进行伪造。
    • 77. 发明授权
    • Nitrogen treatment of a metal nitride/metal stack
    • 金属氮化物/金属堆叠的氮处理
    • US06436819B1
    • 2002-08-20
    • US09495817
    • 2000-02-01
    • Zhi-Fan ZhangDavid PungNitin KhuranaHong ZhangRoderick Craig Mosely
    • Zhi-Fan ZhangDavid PungNitin KhuranaHong ZhangRoderick Craig Mosely
    • H01L2144
    • H01L21/76846H01L21/76856H01L21/76862
    • A method for processing a substrate comprising the formation of a metal nitride/metal stack suitable for use as a barrier/liner for sub-0.18 &mgr;m device fabrication. After a metal nitride layer is deposited upon a metal layer, the metal nitride layer is exposed to a treatment step in a nitrogen-containing environment, e.g., a plasma. The plasma treatment modifies the entire metal nitride layer and a top portion of the underlying metal layer. The plasma adds nitrogen to the top portion of the metal layer, resulting in the formation of a nitrated-metal layer. Aside from reducing the microstructure mismatch across the nitride-metal interface, the plasma treatment also densifies and reduces impurities from the deposited nitride layer. The resulting nitride/metal stack exhibits improved film properties, including enhanced adhesion and barrier characteristics. A composite nitride layer of a desired thickness can also be formed by repeating the deposition and treatment cycles of thinner component nitride layers.
    • 一种用于处理衬底的方法,包括形成适合用作亚0.18μm器件制造的屏障/衬垫的金属氮化物/金属叠层。 在将金属氮化物层沉积在金属层上之后,将金属氮化物层暴露于含氮环境(例如等离子体)中的处理步骤。 等离子体处理改变整个金属氮化物层和下面的金属层的顶部。 等离子体向金属层的顶部添加氮,导致形成硝化金属层。 除了减少跨越氮化物 - 金属界面的微结构失配之外,等离子体处理也使沉积的氮化物层致密化和减少杂质。 所得到的氮化物/金属堆叠表现出改进的膜性质,包括增强的粘附性和阻隔特性。 也可以通过重复较薄的氮化物层的沉积和处理循环来形成所需厚度的复合氮化物层。
    • 79. 发明授权
    • Low temperature integrated metallization process and apparatus
    • 低温一体化金属化工艺及装置
    • US06355560B1
    • 2002-03-12
    • US09209434
    • 1998-12-10
    • Roderick Craig MoselyHong ZhangFusen ChenTed Guo
    • Roderick Craig MoselyHong ZhangFusen ChenTed Guo
    • H01L214763
    • H01L21/76876C23C14/568C23C16/54H01L21/32051H01L21/76843H01L21/76877H01L21/76879
    • The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Al layer.
    • 本发明一般涉及在衬底上提供均匀的台阶覆盖和金属层的平坦化以在半微米应用中形成连续的无空隙接触或通孔的改进方法。 在本发明的一个方面中,将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后在低温下将CVD金属层沉积到耐火层上,以提供用于PVD金属的保形润湿层。 接下来,在低于金属的熔点温度的温度下,将PVD金属沉积在预先形成的CVD金属层上。 所得到的CVD / PVD金属层基本上无空隙。 金属化处理优选在包括PVD和CVD处理室的一体化处理系统中进行,使得一旦将衬底引入真空环境中,就会发生通孔和触点的金属化,而不会在其上形成氧化物层 CVD Al层。
    • 80. 发明授权
    • AC power supply apparatus with economy mode and methods of operation thereof
    • 具有经济模式的交流电源装置及其操作方法
    • US06295215B1
    • 2001-09-25
    • US09545201
    • 2000-04-06
    • Des FariaHong ZhangPiotr GrudzinskiEdward AkbariOve Ohman
    • Des FariaHong ZhangPiotr GrudzinskiEdward AkbariOve Ohman
    • H02M5458
    • H02M5/257H02J9/062H02M5/22H02M5/458H03F2200/351
    • A power supply apparatus includes an AC input port, an output port, and a bypass circuit that couples the AC input port to the output port. An AC/DC converter circuit, e.g., a rectifier circuit, produces a DC voltage from an AC input voltage at the AC input port. A DC/AC converter circuit, e.g., a current mode controlled inverter, controls current transfer between the output port and the AC/DC converter circuit responsive to a control input such that respective first and second component currents of a current delivered to a load coupled to the output port pass via respective ones of the bypass circuit and the DC/AC converter circuit. The DC/AC converter circuit may be operated such that current passing through the bypass circuit is constrained to be substantially in phase with the AC input voltage. The power supply apparatus may have another mode of operation in which the DC/AC converter circuit exclusively provides power to the output port, and may include an auxiliary DC power supply circuit that provides a DC voltage to the DC/AC converter circuit. Related power supply methods are also discussed.
    • 电源装置包括AC输入端口,输出端口和将AC输入端口耦合到输出端口的旁路电路。 AC / DC转换器电路,例如整流电路,从AC输入端口的AC输入电压产生DC电压。 DC / AC转换器电路,例如电流模式控制的逆变器,响应于控制输入来控制输出端口和AC / DC转换器电路之间的电流传输,使得相应的第一和第二分量电流传递到负载耦合 通过旁路电路和DC / AC转换器电路中的相应电路通向输出端口。 可以操作DC / AC转换器电路,使得通过旁路电路的电流被限制为与AC输入电压基本上同相。 电源装置可以具有另一种操作模式,其中DC / AC转换器电路专门为输出端口提供电力,并且可以包括向DC / AC转换器电路提供DC电压的辅助DC电源电路。 还讨论了相关的供电方式。