专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US08110957B2 Permanent magnet motor 有权
标题翻译：永磁电机
公开(公告)号：US08110957B2
公开(公告)日：2012-02-07
申请号：US12654719
申请日：2009-12-30
申请人： Masanori Murakami , Chanaporn Thanathihipong , Wijittra Jabtanom , Pairoj Patisonticharoen
发明人： Masanori Murakami , Chanaporn Thanathihipong , Wijittra Jabtanom , Pairoj Patisonticharoen
IPC分类号： H02K21/12
CPC分类号： H02K1/278 , H02K29/03
摘要： There is provided a permanent magnet motor capable of reducing cogging torque and torque ripple while suppressing a decrease in motor output. In a permanent magnet motor 1 including a rotor 3 in which a plurality of permanent magnets 5 are arranged in a ring shape as a magnetic field unit, the transverse cross section of the permanent magnet 5 has an inside periphery 51 formed by a first arc 511 having the center of curvature O1 and the radius of curvature R1, and an outside periphery 52 formed by a second arc 521 having the center of curvature O2 and the radius of curvature R2, a third arc 522 having the center of curvature O3 and the radius of curvature R3 and joined to one end of the second arc 521, and a fourth arc 523 having the center of curvature O4 and the radius of curvature R4 and joined to the other end of the second arc 521. The above-described centers of curvature are disposed at different positions.
摘要翻译：提供一种能够减少齿槽转矩和转矩脉动同时抑制电机输出减小的永磁电动机。在包括多个永磁体5以环形为磁场单位的转子3的永磁电动机1中，永久磁铁5的横截面具有由第一弧511形成的内周51 具有曲率中心O1和曲率半径R1以及由具有曲率中心O2和曲率半径R2的第二弧521形成的外周52，具有曲率中心O3的第三弧522和半径的曲率R3并且连接到第二弧521的一端，以及具有曲率中心O4和曲率半径R4并且连接到第二圆弧521的另一端的第四圆弧523.上述曲率中心被布置在不同的位置。

72. 发明授权

US07965012B2 Electronic motor 有权
标题翻译：电子电机
公开(公告)号：US07965012B2
公开(公告)日：2011-06-21
申请号：US12654720
申请日：2009-12-30
申请人： Masanori Murakami , Pairoj Patisonticharoen , Chanaporn Thanathitipong , Wijittra Jabtanom
发明人： Masanori Murakami , Pairoj Patisonticharoen , Chanaporn Thanathitipong , Wijittra Jabtanom
IPC分类号： H02K3/38 , H02K15/04
CPC分类号： H02K3/522 , H02K15/095 , H02K2203/12
摘要： There is provided an electronic motor in which a stator core is thinned to obtain an increased diameter of a rotor is to produce a high power output, and a stator can be positioned with high accuracy at the time when a coil is wound on the stator. The outside peripheral surface of a yoke part 31 is substantially the same as the outside peripheral surface of a flange 42 of an insulator 4, and in a part of the flange 42, a cut-away part 43 is provided to expose a part of the end face of a stator core 30.
摘要翻译：提供了一种电子电动机，其中定子铁心被减薄以获得增加的转子直径以产生高功率输出，并且在线圈缠绕在定子上时可以以高精度定位定子。轭部31的外周面与绝缘体4的凸缘42的外周面基本相同，在法兰42的一部分中设置有切除部43，露出一部分定子芯30的端面。

73. 发明申请

US20110121459A1 SEMICONDUCTOR INTERCONNECTION 审中-公开
公开(公告)号：US20110121459A1
公开(公告)日：2011-05-26
申请号：US13003181
申请日：2009-07-10
申请人： Takashi Onishi , Masao Mizuno , Hirotaka Ito , Kazuyuki Kohama , Kazuhiro Ito , Susumu Tsukimoto , Masanori Murakami
发明人： Takashi Onishi , Masao Mizuno , Hirotaka Ito , Kazuyuki Kohama , Kazuhiro Ito , Susumu Tsukimoto , Masanori Murakami
IPC分类号： H01L23/535
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76867 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor interconnection wherein a barrier layer different from a TiO2 layer is formed on an interface between an insulating film and a Cu interconnection without increasing electrical resistivity of the Cu interconnection. In the semiconductor interconnection, a Cu interconnection containing Ti is embedded in a trench arranged on an insulating film on the semiconductor substrate, and a TiC layer is formed between the insulating film and the Cu interconnection. The insulating film is preferably composed of SiCO or SiCN. The thickness of the TiC layer is preferably 3-30 nm.
摘要翻译：提供了一种半导体互连，其中在绝缘膜和Cu互连之间的界面上形成不同于TiO 2层的阻挡层，而不增加Cu互连的电阻率。在半导体互连中，包含Ti的Cu互连嵌入设置在半导体衬底上的绝缘膜上的沟槽中，并且在绝缘膜和Cu互连之间形成TiC层。绝缘膜优选由SiCO或SiCN构成。 TiC层的厚度优选为3-30nm。

74. 发明申请

US20110031575A1 SOLID-STATE IMAGE SENSOR 审中-公开
标题翻译：固态图像传感器
公开(公告)号：US20110031575A1
公开(公告)日：2011-02-10
申请号：US12905820
申请日：2010-10-15
申请人： Atsuo NAKAGAWA , Ichiroh Murakami , Masanori Murakami
发明人： Atsuo NAKAGAWA , Ichiroh Murakami , Masanori Murakami
IPC分类号： H01L31/0232
CPC分类号： H01L27/14818 , H01L27/14621 , H01L27/14627 , H01L31/02164 , H01L31/02165
摘要： A solid-state image sensor includes first and second pixels formed on a semiconductor substrate. The first pixel includes: a first photoelectric conversion region located in an upper portion of the semiconductor substrate; a first transfer electrode; a light-shield film covering the first transfer electrode and having a first opening on the first photoelectric conversion region; and a first anti-reflection film located on the first photoelectric conversion region and, when viewed in plan, within the first opening so as not to overlap the first light-shield film. The second pixel includes: a second photoelectric conversion region located in an upper portion of the semiconductor substrate; a second transfer electrode; the light-shield film covering the second transfer electrode and having a second opening on the second photoelectric conversion region; and a second anti-reflection film located on the second photoelectric conversion region and continuously extending to a portion on the second transfer electrode.
摘要翻译：固态图像传感器包括形成在半导体衬底上的第一和第二像素。第一像素包括：位于半导体衬底的上部的第一光电转换区; 第一转移电极; 覆盖所述第一转印电极并在所述第一光电转换区域具有第一开口的遮光膜; 以及第一抗反射膜，位于第一光电转换区域上，并且当在平面图中观察时，在第一开口内以不与第一光屏蔽膜重叠。第二像素包括：位于半导体衬底的上部的第二光电转换区; 第二转移电极; 所述遮光膜覆盖所述第二转印电极，并且在所述第二光电转换区域上具有第二开口; 以及位于第二光电转换区上并连续延伸到第二转印电极上的部分的第二抗反射膜。

75. 发明授权

US07535145B2 Axial air gap-type electric motor 有权
标题翻译：轴向气隙型电动机
公开(公告)号：US07535145B2
公开(公告)日：2009-05-19
申请号：US11452903
申请日：2006-06-15
申请人： Masanori Murakami
发明人： Masanori Murakami
IPC分类号： H02K21/24
CPC分类号： H02K21/24 , H02K1/2793
摘要： A rotor 31 has permanent magnets 31a disposed on a surface of a disk-shaped back yoke 31b in such a manner that long sides of each permanent magnet extend in a radial direction and that a South pole and a North pole of the permanent magnet 31a are arranged in a circumferential direction. The four permanent magnets 31a are equally spaced from one another in the circumferential direction, and circumferentially-opposed magnetic poles of any two adjacent permanent magnets 31a are of the same magnetic polarity. Rotor cores 31c of a generally fan-shape are fixed to the back yoke to generally cover the four permanent magnets 31a. A flux barrier 31d for reducing the short-cutting of magnetic flux of the permanent magnet 31a is provided between any two adjacent rotor cores 31c, and is disposed at a radially-extending central portion of the permanent magnet 31a.
摘要翻译：转子31具有永久磁铁31a，该永久磁铁31a设置在圆盘状背轭31b的表面上，使得每个永磁体的长边沿径向延伸，并且永磁体31a的南极和北极是沿圆周方向排列。四个永磁体31a在圆周方向上彼此相等间隔，并且任意两个相邻的永磁体31a的周向相对的磁极具有相同的磁极性。通常为扇形的转子铁心31c固定到后轭以大致覆盖四个永磁体31a。在任意两个相邻的转子铁芯31c之间设置用于减少永磁体31a的磁通量的短路的磁通屏障31d，并设置在永磁体31a的径向延伸的中心部分。

76. 发明申请

US20080014743A1 METHOD OF FABRICATING SEMICONDUCTOR INTERCONNECTIONS 失效
标题翻译：制造半导体互连的方法
公开(公告)号：US20080014743A1
公开(公告)日：2008-01-17
申请号：US11765006
申请日：2007-06-19
申请人： Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
发明人： Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76864 , H01L21/76867
摘要： A method of fabricating semiconductor interconnections is provided which can form a Ti-rich layer as a barrier layer and which can embed pure Cu material as interconnection material into every corner of grooves provided in an insulating film even when the grooves have a narrow minimum width and are deep. The method may include the steps of forming one or more grooves in an insulating film on a semiconductor substrate, the recess having a minimum width of 0.15 μm or less and a ratio of a depth of the groove to the minimum width thereof (depth/minimum width) of 1 or more, forming a Cu alloy thin film containing 0.5 to 10 atomic % of Ti in the groove of the insulated film along a shape of the groove in a thickness of 10 to 50 nm, forming a pure Cu thin film in the groove with the Cu alloy thin film attached thereto, and annealing the substrate with the films at 350° C. or more to allow the Ti to be precipitated between the insulating film and the Cu alloy thin film.
摘要翻译：提供一种制造半导体互连的方法，其可以形成富Ti层作为阻挡层，并且即使当沟槽具有窄的最小宽度时，也可以将纯Cu材料作为互连材料嵌入设置在绝缘膜中的沟槽的每个角落，并且很深该方法可以包括以下步骤：在半导体衬底上的绝缘膜中形成一个或多个凹槽，凹槽具有0.15μm或更小的最小宽度以及凹槽的深度与其最小宽度的比（深度/最小值宽度）为1以上，沿着形状为10〜50nm的槽的形状，在绝缘膜的槽内形成含有0.5〜10原子％的Ti的Cu合金薄膜，形成纯Cu薄膜与Cu合金薄膜连接的槽，并使膜在350℃以上退火，使Ti在绝缘膜与Cu合金薄膜之间析出。

77. 发明申请

US20070218690A1 FABRICATION METHOD FOR SEMICONDUCTOR INTERCONNECTIONS 有权
标题翻译：半导体互连的制造方法
公开(公告)号：US20070218690A1
公开(公告)日：2007-09-20
申请号：US11532796
申请日：2006-09-18
申请人： Takashi Onishi , Masao Mizuno , Mikako Takeda , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
发明人： Takashi Onishi , Masao Mizuno , Mikako Takeda , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
IPC分类号： H01L21/44
CPC分类号： H01L21/76882 , H01L21/76843 , H01L21/76867 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： There is provided a fabrication method for interconnections, capable of embedding a Cu-alloy in recesses in an insulating film, and forming a barrier layer on an interface between the an insulating film and Cu-interconnections, without causing a rise in electric resistivity of the interconnections when fabricating semiconductor interconnections of the Cu-alloy embedded in the recesses provided in the insulating film on a semiconductor substrate. The fabrication method for the interconnections may comprise the steps of forming the respective recesses having a minimum width not more than 0.15 μm, and a ratio of a depth thereof to the minimum width (a depth/minimum width ratio) not less than 1, forming a Cu-alloy film containing Ti in a range of 0.5 to 3 at %, and N in a range of 0.4 to 2.0 at % over the respective recesses, and subsequently, annealing the Cu-alloy film to not lower than 200° C., and pressurizing the Cu-alloy film to not less than 50 MPa to thereby embed the Cu-alloy film into the respective recesses.
摘要翻译：提供了一种用于互连的制造方法，其能够将铜合金嵌入绝缘膜中的凹部中，并且在绝缘膜和Cu互连之间的界面上形成阻挡层，而不会导致电阻率的上升当制造嵌入在设置在半导体衬底上的绝缘膜中的凹部中的Cu合金的半导体互连时，互连。互连的制造方法可以包括以下步骤：形成具有不大于0.15μm的最小宽度的相应凹槽，以及其深度与最小宽度（深度/最小宽度比）的比不小于1，形成在各凹部中含有0.5〜3原子％的Ti，N为0.4〜2.0原子％的Ti的Cu合金膜，然后将Cu合金膜退火至200℃以上。并将Cu合金膜加压至50MPa以上，从而将Cu合金膜嵌入各凹部。

78. 发明授权

US07190076B2 Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same 有权
标题翻译： p型III族氮化物半导体层用电极及其制造方法
公开(公告)号：US07190076B2
公开(公告)日：2007-03-13
申请号：US10695453
申请日：2003-10-29
申请人： Ippei Fujimoto , Tsutomu Sekine , Miki Moriyama , Masanori Murakami , Naoki Shibata
发明人： Ippei Fujimoto , Tsutomu Sekine , Miki Moriyama , Masanori Murakami , Naoki Shibata
IPC分类号： H01L23/48 , H01L29/40 , H01L29/20 , H01L33/00 , H01L29/02
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/32 , H01L33/40
摘要： A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN substrate is heated to a temperature of 300° C. or by (2) vapor deposition while the GaN substrate is left at room temperature. (3) The electrode obtained in (2) is heated to 300° C. in a nitrogen atmosphere. The contact resistance of the electrode obtained in (1) is lower by two or three digits than that of the electrode obtained in (2) or (3). That is, the electric characteristic of the electrode obtained in (1) is improved greatly.
摘要翻译：通过AlN缓冲层在蓝宝石衬底上形成GaN层，并掺杂Mg以制备层压体（称为“GaN衬底”）。通过（1）在GaN衬底被加热到300℃之后或通过（2）气相沉积在GaN衬底留下时，通过（1）气相沉积在GaN衬底上形成50nm厚的金属（Pt和Ni）电极在室温下。（3）将（2）得到的电极在氮气氛中加热至300℃。（1）中获得的电极的接触电阻比在（2）或（3）中获得的电极的接触电阻低两位或三位数。也就是说，（1）中得到的电极的电特性大大提高。

79. 发明申请

US20060065898A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060065898A1
公开(公告)日：2006-03-30
申请号：US11233113
申请日：2005-09-23
申请人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
发明人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
IPC分类号： H01L29/15
CPC分类号： H01L21/28575 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02491 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
摘要翻译：在其中形成III族氮化物化合物半导体层的半导体器件中，没有设置在由金属氮化物层形成的底涂层上的低温生长缓冲层，金属氮化物层由红棕色氮化钛形成。可以通过使氮富含氮化钛来获得微红棕色的氮化钛。

80. 发明授权

US06943376B2 Electrode for p-type SiC 失效
标题翻译： p型SiC电极
公开(公告)号：US06943376B2
公开(公告)日：2005-09-13
申请号：US10415914
申请日：2002-09-02
申请人： Osamu Nakatsuka , Ryohei Konishi , Ryuichi Yasukochi , Yasuo Koide , Masanori Murakami , Naoki Shibata
发明人： Osamu Nakatsuka , Ryohei Konishi , Ryuichi Yasukochi , Yasuo Koide , Masanori Murakami , Naoki Shibata
IPC分类号： C23C14/14 , H01L21/04 , H01L21/28 , H01L29/24 , H01L29/45 , H01L29/861 , H01L29/868 , H01L33/00 , C04B41/90
CPC分类号： H01L29/45 , H01L29/1608 , H01L33/34 , H01L33/40
摘要： An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an electrode. In this invention, a p-type electrode is manufactured to contain at least one selected from the group consisting of nickel (Ni), cobalt (Co), palladium (Pd) and platinum (Pt).
摘要翻译：本发明的目的是提供一种用于p型SiC的电极，其可以由于电极的形成而为半导体晶体层提供改善的表面形态和较少的热损伤。在本发明中，制造p型电极以含有选自镍（Ni），钴（Co），钯（Pd）和铂（Pt）中的至少一种。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式