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    • 74. 发明授权
    • Dynamic RAM, dynamic RAM plate voltage setting method, and information
processing system
    • 动态RAM,动态RAM板电压设定方法和信息处理系统
    • US5459684A
    • 1995-10-17
    • US197768
    • 1994-02-16
    • Masayuki NakamuraTetsuro MatsumotoKazuyoshi Oshima
    • Masayuki NakamuraTetsuro MatsumotoKazuyoshi Oshima
    • G11C11/404G11C11/407G11C11/4074G11C7/00G11C11/40
    • G11C11/4074
    • A dynamic RAM enhanced in integration and storage capacity, a method of setting a plate voltage of the dynamic RAM, and an information processing system reduced in size and enhanced in performance are provided. The plate voltage is set such that a leakage current of an information storage capacitor when a bit line voltage is positive relative to the plate voltage is made substantially equal to a leakage current of the capacitor when the bit line voltage is negative relative to the plate voltage. For this plate voltage setting, a plate voltage generating circuit is provided with an output voltage adjusting capability. A monitoring capacitor is formed on the same semiconductor wafer on which the information storage capacitor is formed. This monitoring capacitor is formed by a same method by which the information storage capacitor is formed, and is made of a same material of which the information storage capacitor is made. The monitoring capacitor is tested in a wafer probing process. Based on a measurement result, the plate voltage is set to an optimum level. The information processing system is constituted with the dynamic RAM as its memory device having the optimum plate voltage.
    • 提供集成和存储容量增强的动态RAM,设置动态RAM的板电压的方法以及尺寸减小和性能提高的信息处理系统。 板电压被设定为当位线电压相对于板电压为正时,信息存储电容器的漏电流基本上等于当位线电压相对于板电压为负时电容器的漏电流 。 对于该板电压设定,板电压发生电路具有输出电压调整能力。 在形成信息存储电容器的同一半导体晶片上形成监视电容器。 该监视电容器由形成信息存储电容器的相同方法形成,并且由与信息存储电容器相同的材料制成。 监测电容器在晶圆探测过程中进行测试。 基于测量结果,将板电压设置为最佳水平。 该信息处理系统由动态RAM作为具有最佳板电压的存储器件构成。