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71. 发明申请

US20080001146A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080001146A1
公开(公告)日：2008-01-03
申请号：US11818123
申请日：2007-06-13
申请人： Hiroaki Takasu , Sukehiro Yamamoto
发明人： Hiroaki Takasu , Sukehiro Yamamoto
IPC分类号： H01L23/58
CPC分类号： H01L23/544 , G01R31/2884 , G01R31/2887 , H01L2223/5446 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device, in which: patterns for detecting displacement at probing are formed of a plurality of minute conductors formed below a protective film; each of the plurality of minute conductors formed below the protective film is electrically insulated and formed to be smaller than a bottom surface of a tip of a probing needle used for carrying out an electrical measurement of IC chips; and the patterns for detecting displacement at probing are provided in a pair for each of the IC chips.
摘要翻译：提供一种半导体器件，其中：用于检测探测位移的图案由形成在保护膜下面的多个微小导体形成; 形成在保护膜下方的多个微导体中的每一个电绝缘并形成为小于用于执行IC芯片的电测量的探针的尖端的底表面; 并且针对每个IC芯片成对地设置用于检测探测位移的图案。

72. 发明申请

US20070291148A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070291148A1
公开(公告)日：2007-12-20
申请号：US11818292
申请日：2007-06-14
申请人： Hiroaki Takasu
发明人： Hiroaki Takasu
IPC分类号： H04N5/335 , H04N3/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： Provided is a MOS image sensor IC in which: conductors for potential fixation, each fixed to the same potential, surround a plurality of pixel regions; the conductors for potential fixation are each formed in a narrow shape in the pixel regions, and are electrically connected to each other so that the conductors have the potential of a silicon substrate. Accordingly, each potential of the entire pixel regions, which are formed under a protective film when a protective film is formed, is made constant, thereby obtaining a uniform thickness and quality of the protective film, which can suppress a variation in photoelectric conversion characteristic of pixels.
摘要翻译：提供了一种MOS图像传感器IC，其中：固定为相同电位的电位固定用导体围绕多个像素区域; 用于电位固定的导体各自在像素区域中形成为窄形状，并且彼此电连接，使得导体具有硅衬底的电位。因此，形成保护膜时形成在保护膜下方的整个像素区域的每个电位保持恒定，从而获得均匀的厚度和质量的保护膜，其可以抑制光电转换特性的变化像素。

73. 发明申请

US20070290709A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070290709A1
公开(公告)日：2007-12-20
申请号：US11810766
申请日：2007-06-07
申请人： Hiroaki Takasu
发明人： Hiroaki Takasu
IPC分类号： G01R31/26
CPC分类号： G01R31/2884 , G01R31/2891 , H01L23/544 , H01L2223/54426 , H01L2223/5446 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： Patterns for detecting displacement at probing occupying a small area are provided and are capable of detecting the direction of the displacement when a needle is displaced in probing. The patterns for detecting displacement at probing are arranged in pairs in a scribe region adjacent to IC chips, the pattern for detecting displacement at probing is formed of an inner conductor and an outer conductor arranged at a minute distance from the inner conductor which are concentrically formed, and the outer conductor is divided into a plurality of parts.
摘要翻译：提供了用于检测占据小面积的探测位移的图案，并且能够在针在探测中移位时检测位移的方向。用于检测探测位移的图案成对地布置在与IC芯片相邻的划线区域中，用于检测位移的图案由内部导体和外部导体形成，内部导体和外部导体与内部导体布置成微小的距离，该内部导体是同心形成的，外导体分为多个部分。

74. 发明申请

US20070200189A1 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070200189A1
公开(公告)日：2007-08-30
申请号：US11709496
申请日：2007-02-22
申请人： Atsushi Iwasaki , Hiroaki Takasu
发明人： Atsushi Iwasaki , Hiroaki Takasu
IPC分类号： H01L27/14
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14643
摘要： Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate (1), an n-type well (2) having a predetermined depth and formed in a predetermined region of the p-type substrate (1), and a depletion layer generated at a junction interface between the p-type substrate (1) and the n-type well (2). In the trenches (22) having a depth larger than that of a depletion layer (K1) generated on a bottom side of the n-type well (2) and a width larger than that of depletion layers (K2, K3) generated on sides of the n-type well (2) are provided so as to remove junction interfaces (J2, J3) on the sides of the n-type well (2), and an insulating layer (21) is buried in the trenches (22).
摘要翻译：提供一种用于进行入射光的光电转换的半导体器件，包括：p型衬底（1），具有预定深度并形成在p型衬底（1）的预定区域中的n型阱（2））和在p型衬底（1）和n型阱（2）之间的结界面处产生的耗尽层。在沟槽（22）中，其深度大于在n型阱（2）的底侧上产生的耗尽层（K L1）的深度，并且其宽度大于耗尽层的宽度提供在n型阱（2）的侧面上产生的（K 2 N 3，K 3 N），以便去除接合界面（J 2 （2）的侧面上，并且绝缘层（21）被埋在沟槽（22）中。

75. 发明授权

US06803886B2 Light valve device 失效
标题翻译：光阀装置
公开(公告)号：US06803886B2
公开(公告)日：2004-10-12
申请号：US09931843
申请日：2001-08-17
申请人： Kenichi Kondo , Kunihiro Takahashi , Hiroaki Takasu , Tsuneo Yamazaki , Atsushi Sakurai
发明人： Kenichi Kondo , Kunihiro Takahashi , Hiroaki Takasu , Tsuneo Yamazaki , Atsushi Sakurai
IPC分类号： G09G336
CPC分类号： G02F1/13454 , G02F1/135 , G02F1/1362 , G02F2001/133354 , G02F2202/105 , G09G3/001 , G09G3/3611 , G09G3/3648 , G09G5/006 , G09G2310/027 , G09G2310/0297 , H01L27/12 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2924/1305 , H01L2924/13091 , H01L2924/30107 , H01L2924/3025 , H04N13/158 , H04N13/189 , H04N13/194 , H04N13/239 , H04N13/324 , H04N13/363 , H04N13/398 , H01L2924/00014 , H01L2924/00
摘要： An object of the present invention is to provide an improved structure of highly fine bight valve device. On a quartz glass substrate 1 and a monocrystalline silicon thin film layer z bonded on the quartz glass substrate 2, are provided an X diving circuit 6 and a Y driving circuit 8 integrated by a very large scale integration process, driving electrodes 5 of a matrix type for conduction signals outputted from the X driving circuit 6 and the Y driving circuit 8, a transistor 9 and a display pixel electrode 10 arranged at a cross-section of the driving electrodes 5 of a matrix type, a control circuit 4 for supplying timing signals to the X driving circuit 6 and the Y driving circuit 8, and a display data generating circuit 3 for generating display data in order to display an image, and further a light source element driving circuit 19 for driving a light source element is provided thereon. A liquid crystal layer 16 is sealed in a gap between the first transparent substrate and the second transparent substrate with a sealing agent 15. The sealing agent 15 is composed of, for example, an adhesive resin which is stiffened by ultraviolet irradiation, and is supplied along a predetermined seal region 18. The present invention provides an improved enforced structure of the light valve device having high reliability, convenience to use, a very compact size, high density and high accuracy.
摘要翻译：本发明的目的是提供一种改进的高精度弯曲阀装置的结构。在石英玻璃基板1和结合在石英玻璃基板2上的单晶硅薄膜层z上设置有X潜水电路6和 Y驱动电路8，由X驱动电路6和Y驱动电路8输出的导通信号的矩阵型驱动电极5，交叉排列的晶体管9和显示像素电极10，矩阵型的驱动电极5的一部分，用于向X驱动电路6和Y驱动电路8提供定时信号的控制电路4以及用于产生显示数据以显示图像的显示数据产生电路3 并且还设置有用于驱动光源元件的光源元件驱动电路19。液晶层16用密封剂15密封在第一透明基板和第二透明基板之间的间隙中。密封剂15例如由通过紫外线照射加固的粘合树脂构成，并且被供给沿着预定的密封区域18.本发明提供了具有高可靠性，便于使用，非常紧凑的尺寸，高密度和高精度的光阀装置的改进的强制结构。

76. 发明授权

US06653713B2 Thin film resistor with stress compensation 有权
标题翻译：具有应力补偿的薄膜电阻
公开(公告)号：US06653713B2
公开(公告)日：2003-11-25
申请号：US09975823
申请日：2001-10-12
申请人： Hiroaki Takasu
发明人： Hiroaki Takasu
IPC分类号： H01L2900
CPC分类号： H01L27/0802 , H01L28/20
摘要： A thin film resistor maintains its resistance value when stress is applied so that it may be used in a high precision bleeder resistor circuit to maintain an accurate voltage dividing ratio. The thin film resistor has a P-type thin film resistor formed of a P-type semiconductor thin film and an N-type thin film resistor formed of an N-type semiconductor thin film overlapping the P-type thin film resistor with an insulating layer interposed therebetween, so that a change in resistance value when stress is applied is prevented. In a bleeder resistor circuit, a resistance value of one unit is regulated by a resistance value formed by a combination of the P-type thin film resistor and the N-type thin film resistor so that an accurate voltage dividing ratio can be maintained when stress is applied.
摘要翻译：当施加应力时，薄膜电阻器保持其电阻值，使其可用于高精度泄放电阻电路中，以保持精确的分压比。薄膜电阻器具有由P型半导体薄膜构成的P型薄膜电阻和由与P型薄膜电阻器重叠的绝缘层的N型半导体薄膜形成的N型薄膜电阻器插入其间，从而防止施加应力时的电阻值的变化。在泄放电阻电路中，通过由P型薄膜电阻器和N型薄膜电阻器的组合形成的电阻值来调节一个单位的电阻值，使得在应力时可以保持精确的分压比被申请;被应用。

77. 发明授权

US06187605B1 Method of forming a semiconductor device for a light valve 失效
标题翻译：形成光阀的半导体器件的方法
公开(公告)号：US06187605B1
公开(公告)日：2001-02-13
申请号：US08308564
申请日：1994-09-19
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： H01L2100
CPC分类号： H01L27/1214 , G02F1/13454 , G02F2001/136281 , G02F2202/105 , H01L27/1203
摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed of a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.
摘要翻译：利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。用于光阀的半导体器件由具有不透明厚部分和薄透明部分的块状单晶硅构成的半导体衬底构成。在透明部分中形成像素阵列。驱动电路形成在不透明部分的顶面。将透明支撑基板层叠到半导体基板的顶面以进行加强。通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

78. 发明授权

US6040200A Method of fabricating semiconductor device having stacked-layered substrate 失效
标题翻译：制造具有层叠基板的半导体器件的方法
公开(公告)号：US6040200A
公开(公告)日：2000-03-21
申请号：US834168
申请日：1997-04-14
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： A method of fabricating a light valve device comprises forming a substrate having stacked layers including a light-shielding thin film layer, an insulating film, and a single crystalline semiconductor thin film stacked in this order on a transparent support substrate. A light-shielding layer pattern is formed by selectively etching the stacked layers. Thereafter, a switching element is formed comprised of a transistor having a channel region formed in the single crystalline semiconductor thin film and a main gate electrode covering the channel region. The channel region is provided over the light-shielding pattern layer to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced leakage current in the channel region. A transparent electrode is formed and is electrically connected to the switching element. An opposing substrate is then provided over the substrate at the side of the single crystalline semiconductor thin film, and an electro-optical material layer is interposed between the substrate and the opposing substrate.
摘要翻译：一种制造光阀装置的方法包括在透明支撑基板上依次形成具有堆叠层的衬底，该层叠层包括遮光薄膜层，绝缘膜和单晶半导体薄膜。通过选择性地蚀刻层叠层来形成遮光层图案。此后，开关元件由具有在单晶半导体薄膜中形成的沟道区的晶体管和覆盖沟道区的主栅电极构成。沟道区域设置在遮光图案层上，以防止从透明支撑衬底入射的光照射沟道区域，以抑制沟道区域中的光致感应漏电流。形成透明电极并与开关元件电连接。然后在单晶半导体薄膜侧面的衬底上设置相对的衬底，并且在衬底和相对衬底之间插入电光材料层。

79. 发明授权

US5926699A Method of fabricating semiconductor device having stacked layer substrate 失效
标题翻译：制造具有堆叠层基板的半导体器件的方法
公开(公告)号：US5926699A
公开(公告)日：1999-07-20
申请号：US89465
申请日：1998-06-02
申请人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
发明人： Yutaka Hayashi , Masaaki Kamiya , Yoshikazu Kojima , Hiroaki Takasu
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/1368 , H01L21/84 , H01L21/86 , H01L27/1203 , H01L27/1214 , H01L29/66772 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , Y10S148/012 , Y10S148/15 , Y10S438/977
摘要： A method of fabricating a semiconductor device comprises the steps of sequentially forming a first gate electrode and an insulating film over a transparent support substrate, forming a through-hole in the insulating film, forming a semiconductor single crystal silicon thin film over the transparent support substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region of the transistor element.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在透明支撑衬底上依次形成第一栅电极和绝缘膜，在绝缘膜中形成通孔，在透明支撑衬底上形成半导体单晶硅薄膜通过在绝缘膜的通孔中进行外延生长，形成具有在半导体单晶硅薄膜中形成的沟道区的晶体管元件，并且在晶体管元件的沟道区上形成第二栅电极并将其电绝缘。

80. 发明授权

US5633176A Method of producing a semiconductor device for a light valve 失效
标题翻译：制造光阀半导体装置的方法
公开(公告)号：US5633176A
公开(公告)日：1997-05-27
申请号：US463687
申请日：1995-06-05
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： G02F1/1362 , H01L27/12 , H01L21/84 , H01L21/304
CPC分类号： G02F1/13454 , H01L27/12 , H01L27/1203 , G02F2001/136281 , G02F2202/105 , Y10S438/977
摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.
摘要翻译：半导体衬底被用于整体形成驱动电路和像素阵列以产生用于光阀的透明半导体器件，其包括在半导体衬底的主面上的像素阵列区域和驱动电路区域。在像素阵列区域的半导体基板的主面上形成有阻挡膜，在氧化硅阻挡膜上形成像素阵列。在驱动电路区域上形成驱动电路，在驱动电路区域，氧化硅柱嵌入半导体基板的主面。然后从与其主面相反的背面选择性地去除半导体衬底的厚度以到达阻挡膜。在选择性去除步骤之后，半导体衬底在像素区域下方的部分被完全去除，而驱动电路区域下的半导体衬底的一部分保留。

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