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71. 发明授权

US08570677B2 Implementing spin-torque oscillator sensing with enhanced integrated demodulator for hard disk drives 有权
标题翻译：通过增强的集成解调器实现用于硬盘驱动器的自旋扭矩振荡器感应
公开(公告)号：US08570677B2
公开(公告)日：2013-10-29
申请号：US13316419
申请日：2011-12-09
申请人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
发明人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
IPC分类号： G11B20/06 , G11B5/02 , G11B21/02
CPC分类号： H03D3/009 , G11B20/10018 , G11B20/10027 , G11B2220/2516
摘要： A method, apparatus, and system are provided for implementing spin-torque oscillator sensing with an enhanced integrated demodulator for hard disk drives. The demodulator receives an input signal from a STO read sensor having an oscillation frequency ω related to the strength of the detected magnetic signal field. The demodulator includes a pair of mixers coupled to a quadrature reference oscillator with respective quadrature components cos(ω0t), and sin(ω0t) of the quadrature reference oscillator being mixed with a received input signal to form signals at the sum and difference frequencies, ω±ω0. Each of these mixer products is lowpass filtered by a respective a lowpass filter to remove the sum frequency components for providing a demodulator output signal that is directly proportional the STO oscillation frequency ω. The demodulator output signal is used for processing by data detection electronics.
摘要翻译：提供了一种用于通过用于硬盘驱动器的增强型集成解调器来实现自旋扭矩振荡器感测的方法，装置和系统。解调器接收来自具有与所检测的磁信号场的强度相关的振荡频率ω的STO读取传感器的输入信号。解调器包括耦合到具有相应正交分量cos（ωωt）的正交参考振荡器的正交参考振荡器对，并且正交基准振荡器的sin（ω0t）与接收的输入信号混合以形成和频率和差频率ω ±omega0。这些混频器产品中的每一个由相应的低通滤波器进行低通滤波，以去除和频分量，以提供与STO振荡频率ω直接成比例的解调器输出信号。解调器输出信号用于数据检测电子设备的处理。

72. 发明授权

US08553346B2 Implementing spin-torque oscillator sensing with enhanced delay control feedback circuit for hard disk drives 有权
标题翻译：实现旋转扭矩振荡器感应与增强的延迟控制反馈电路硬盘驱动器
公开(公告)号：US08553346B2
公开(公告)日：2013-10-08
申请号：US13316407
申请日：2011-12-09
申请人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
发明人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
IPC分类号： G11B20/06 , G11B21/02
CPC分类号： G11B5/02 , G11B5/3903 , G11B2005/0016
摘要： A method, apparatus, and system for implementing spin-torque oscillator (STO) sensing with an enhanced delay control feedback circuit for hard disk drives. A detector receives an input signal from a STO read sensor having an oscillation frequency related to the strength of the detected magnetic signal field. The received input signal is mixed with a time delayed input signal for providing a detector output signal. A low frequency component signal of the detector output signal is monitored and a delay control feedback is applied to an adjustable time delay to bias the DC signal of the detector output signal.
摘要翻译：一种用于实现用于硬盘驱动器的增强型延迟控制反馈电路实现自旋扭矩振荡器（STO）感测的方法，装置和系统。检测器从具有与所检测的磁信号场的强度相关的振荡频率的STO读取传感器接收输入信号。所接收的输入信号与用于提供检测器输出信号的时间延迟输入信号混合。监视检测器输出信号的低频分量信号，并将延迟控制反馈应用于可调节的时间延迟以偏置检测器输出信号的DC信号。

73. 发明申请

US20130052484A1 CPP-GMR SENSOR WITH CORROSION RESISTENT SPACER LAYER AND HIGHER SIGNAL/NOISE RATIO 有权
标题翻译：具有腐蚀电阻间隔层和高信号/噪声比的CPP-GMR传感器
公开(公告)号：US20130052484A1
公开(公告)日：2013-02-28
申请号：US13222827
申请日：2011-08-31
申请人： Jeffrey R. Childress , John C. Read , Neil Smith
发明人： Jeffrey R. Childress , John C. Read , Neil Smith
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/3906 , B82Y10/00 , G11B2005/3996
摘要： A method and apparatus for increasing the electrical resistivity and corrosion resistance of the material forming a spacer layer in current-perpendicular-to-the-plane (CPP) giant magnetoresistive (GMR) sensors. The increased resistivity of the spacer layer, and thus, the CPP-GMR sensor permits a larger voltage across the sensor and a higher signal-to-noise ratio. The increased corrosion resistance of the spacer layer minimizes the effects of exposing the spacer layer to corrosive materials during fabrication. For example, adding tin to silver to form a metallic alloy spacer layer increases the corrosion resistance of the spacer layer and the electrical resisitivity of the CPP-GMR sensor relative to a spacer layer consisting solely of silver. The Ag—Sn alloy permits a larger current to flow through the sensor, which increases the signal-to-noise ratio.
摘要翻译：一种用于增加在电流垂直平面（CPP）巨磁阻（GMR）传感器中形成间隔层的材料的电阻率和耐腐蚀性的方法和装置。间隔层以及因此CPP-GMR传感器的电阻率增加允许传感器两端的电压较大，信噪比更高。隔离层增加的耐腐蚀性最小化在制造期间将间隔层暴露于腐蚀性材料的影响。例如，将锡添加到银以形成金属合金间隔层增加了间隔层的耐腐蚀性和CPP-GMR传感器相对于仅由银构成的间隔层的电阻率。 Ag-Sn合金允许更大的电流流过传感器，这增加了信噪比。

74. 发明授权

US08228644B2 CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientation 失效
标题翻译：具有非正交自由和参考层磁化方向的CPP-TMR传感器
公开(公告)号：US08228644B2
公开(公告)日：2012-07-24
申请号：US13359265
申请日：2012-01-26
申请人： Jeffrey Robinson Childress , Neil Smith
发明人： Jeffrey Robinson Childress , Neil Smith
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/3906 , G11B5/3932 , G11B2005/0016 , H01L43/08
摘要： A CPP spin-valve magnetic head, according to one embodiment includes a ferromagnetic free layer having a bias-point magnetization nominally oriented in a first direction; a ferromagnetic reference layer film having a bias-point magnetization nominally oriented in a second direction that is not orthogonal to the said first direction; and a tunnel barrier layer between the free and reference layers.
摘要翻译：根据一个实施例的CPP自旋阀磁头包括具有在第一方向上标称取向的偏置点磁化的铁磁自由层; 铁磁参考层膜，其具有在与所述第一方向不正交的第二方向上名义上取向的偏置点磁化强度; 以及在自由层和参考层之间的隧道势垒层。

75. 发明申请

US20120120520A1 CPP-TMR SENSOR WITH NON-ORTHOGONAL FREE AND REFERENCE LAYER MAGNETIZATION ORIENTATION 失效
标题翻译：具有非正交自由和参考层磁化定向的CPP-TMR传感器
公开(公告)号：US20120120520A1
公开(公告)日：2012-05-17
申请号：US13359265
申请日：2012-01-26
申请人： Jeffrey Robinson Childress , Neil Smith
发明人： Jeffrey Robinson Childress , Neil Smith
IPC分类号： G11B5/127 , G11B5/60 , G11B19/02
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/3906 , G11B5/3932 , G11B2005/0016 , H01L43/08
摘要： A CPP spin-valve magnetic head, according to one embodiment includes a ferromagnetic free layer having a bias-point magnetization nominally oriented in a first direction; a ferromagnetic reference layer film having a bias-point magnetization nominally oriented in a second direction that is not orthogonal to the said first direction; and a tunnel barrier layer between the free and reference layers.
摘要翻译：根据一个实施例的CPP自旋阀磁头包括具有在第一方向上标称取向的偏置点磁化的铁磁自由层; 铁磁参考层膜，其具有在与所述第一方向不正交的第二方向上名义上取向的偏置点磁化强度; 以及在自由层和参考层之间的隧道势垒层。

76. 发明授权

US08130474B2 CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientation 失效
标题翻译：具有非正交自由和参考层磁化方向的CPP-TMR传感器
公开(公告)号：US08130474B2
公开(公告)日：2012-03-06
申请号：US12172895
申请日：2008-07-14
申请人： Jeffrey Robinson Childress , Neil Smith
发明人： Jeffrey Robinson Childress , Neil Smith
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/3906 , G11B5/3932 , G11B2005/0016 , H01L43/08
摘要： A TMR sensor structure having free and reference layers, where the magnetic orientations of the free and reference layers are non-orthogonal. In one embodiment, a ferromagnetic free layer film has a bias-point magnetization nominally oriented in plane of the film thereof, in a first direction at an angle θfb with respect to a longitudinal axis being defined as the intersection of the plane of deposition of the free layer and the plane of the ABS. A ferromagnetic reference layer film has a bias-point magnetization nominally oriented in a plane of the film thereof, in a second direction at angle θrb with respect to said longitudinal axis that is not orthogonal to the said first direction.
摘要翻译：具有自由参考层的TMR传感器结构，其中自由参考层和参考层的磁取向是非正交的。在一个实施例中，铁磁自由层膜在第一方向上具有在其平面内以标称方向取向的偏置点磁化角;相对于纵轴被定义为沉积平面的交点的自由层和ABS的平面。铁磁参考层膜具有在其膜的平面中以相对于所述纵向轴线不与所述第一方向正交的第二方向的角度θ标称定向的偏置点磁化。

77. 发明授权

US08015694B2 Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor 有权
标题翻译：用于制造剪切型电流 - 垂直于平面（CPP）磁阻传感器的方法
公开(公告)号：US08015694B2
公开(公告)日：2011-09-13
申请号：US11959102
申请日：2007-12-18
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.
摘要翻译：具有双铁磁感测或由非磁性间隔层隔开的自由层的“扫描型”电流垂直平面（CPP）磁阻传感器具有改善的稳定性，这是由于每个中的蚀刻诱导的单轴磁各向异性自由层。两个铁磁自由层中的每一个具有蚀刻诱导的单轴磁各向异性和在静止状态下基本上平行于其单轴各向异性的面内磁矩，即不存在施加的磁场。每个自由层的蚀刻诱导的单轴各向异性通过对每个自由层的直接离子蚀刻和/或通过其上沉积有每个自由层的层的离子蚀刻来实现。通过蚀刻在自由层中诱发强烈的磁各向异性，这有利于静止状态下的两个自由层的大致正交取向。

78. 发明授权

US07982996B2 Perpendicular magnetic recording write head and system with improved spin torque oscillator for microwave-assisted magnetic recording 有权
标题翻译：垂直磁记录头和系统具有改进的自旋扭矩振荡器用于微波辅助磁记录
公开(公告)号：US07982996B2
公开(公告)日：2011-07-19
申请号：US12632787
申请日：2009-12-07
申请人： Neil Smith , Petrus Antonius VanDerHeijden
发明人： Neil Smith , Petrus Antonius VanDerHeijden
IPC分类号： G11B5/02
CPC分类号： G11B5/3133 , G11B5/1278 , G11B2005/001 , G11B2005/0024
摘要： A microwave-assisted magnetic recording (MAMR) write head and system has a spin-torque oscillator (STO) located between the write pole of the write head and a trailing shield that alters the write field from the write pole. The STO is a stack of layers whose planes lie generally parallel to the X-Y plane of an X-Y-Z coordinate system, the stack including a ferromagnetic polarizer layer, a free ferromagnetic layer, and a nonmagnetic electrically conductive spacer between the polarizer layer and the free layer. In the presence of the write field from the write pole the polarizer layer has its magnetization oriented at an angle between 20 and 80 degrees, preferably between 30 and 70 degrees, with the Z-axis. In the presence of a direct electrical current through the STO stack, the free layer magnetization rotates or precesses about the Z-axis with a non-zero angle to the Z-axis.
摘要翻译：微波辅助磁记录（MAMR）写头和系统具有位于写头的写极之间的自旋扭矩振荡器（STO）和从写极改变写入场的后屏蔽。 STO是其平面大致平行于X-Y-Z坐标系的X-Y平面的一叠层，该堆叠包括在偏振层和自由层之间的铁磁偏振器层，自由铁磁层和非磁性导电间隔物。在写磁极存在写入场的情况下，偏振器层的磁化方向与Z轴成20度到80度之间，优选地在30度和70度之间的角度。在存在通过STO堆叠的直接电流的情况下，自由层磁化围绕Z轴以与Z轴成非零角度的方式旋转或进动。

80. 发明申请

US20090128963A1 NARROW TRACK EXTRAORDINARY MAGNETO RESISTIVE [EMR] DEVICE WITH WIDE VOLTAGE TABS AND DIAD LEAD STRUCTURE 失效
标题翻译： NARROW TRACK EXTRAORDINARY MAGNETO RESISTIVE [EMR]具有宽电压表和DIAD引线结构的器件
公开(公告)号：US20090128963A1
公开(公告)日：2009-05-21
申请号：US12345724
申请日：2008-12-30
申请人： Thomas Dudley Boone, JR. , Bruce Alvin Gurney , Ernesto E. Marinaro , Neil Smith
发明人： Thomas Dudley Boone, JR. , Bruce Alvin Gurney , Ernesto E. Marinaro , Neil Smith
IPC分类号： G11B5/127
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： A Lorenz magnetoresistive sensor having a pair of voltage leads and a pair of current leads. The voltage leads are located at either side of one of the current leads and are separated by a distance that is substantially equal to the length of a bit to be measured. The Lorenz magnetoresistive sensor can be, for example an extraordinary magnetoresistive sensor having a quantum well structure such as a two dimensional electron gas and a shunt structure formed on an edge of the quantum well structure opposite the voltage and current leads.
摘要翻译：一种具有一对电压引线和一对电流引线的洛伦兹磁阻传感器。电压引线位于电流引线之一的两侧，并分开一段距离，该距离基本上等于要测量的位的长度。 Lorenz磁阻传感器可以是例如具有诸如二维电子气体的量子阱结构的异常磁阻传感器，以及形成在与电压和电流引线相反的量子阱结构的边缘上的分流结构。

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