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71. 发明授权

US06803960B2 Optical test structure for measuring charge-transfer efficiency 有权
标题翻译：用于测量电荷转移效率的光学测试结构
公开(公告)号：US06803960B2
公开(公告)日：2004-10-12
申请号：US09736936
申请日：2000-12-14
申请人： John P. Shepherd , Eric G. Stevens
发明人： John P. Shepherd , Eric G. Stevens
IPC分类号： H04N5335
CPC分类号： H01L27/14818 , H01L27/1485
摘要： An optically operated test structure for testing the charge transfer efficiency (CTE) of a charge coupled device (CCD) solid-state image sensor. A solid-state image sensor includes a substrate of a semiconductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs are in the substrate at the surface. Each CCD includes a channel region and a plurality of conductive gates extending across and insulated from the channel region. The conductive gates extend laterally across the channel regions of all of the CCDs and divide the channel regions into a plurality of phases and pixels. A drain region of the opposite conductivity type is in the substrate at the surface and extends along the channel region of at least one of the CCDs. A simply connected (rectangular) region of the plurality of spaced, parallel CCDs is photoactive. The CCDs outside this photoactive region are typically covered with metal or some other optically opaque material. One or more of the parallel CCD columns comprise optical test structures at the start and end of the CCD array and are photoactive. One or more parallel regions are adjacent and abutting on either side of the test structures; these may or may not be photoactive. These surrounding, adjacent regions are connected to a drain on the imager; the drain collects any charge captured in these adjacent regions. Each of the plurality of spaced, parallel, vertical CCDs is connected to one or more horizontal CCDs oriented in a direction perpendicular to the vertical CCDs.
摘要翻译：一种用于测试电荷耦合器件（CCD）固态图像传感器的电荷转移效率（CTE）的光学测试结构。固态图像传感器包括具有表面的一种导电类型的半导体材料的衬底。多个间隔开的平行CCD位于表面的基板中。每个CCD包括沟道区域和延伸跨过沟道区域并且与沟道区域绝缘的多个导电栅极。导电栅极跨越所有CCD的沟道区域横向延伸，并将沟道区域分成多个相位和像素。相反导电类型的漏区在表面处于衬底中并且沿着至少一个CCD的沟道区延伸。多个间隔开的并联CCD的简单连接（矩形）区域是光活性的。该光活性区域外的CCD通常被金属或其它不透光材料覆盖。并行CCD列中的一个或多个包括在CCD阵列的开始和结束处的光学测试结构，并且是光活性的。一个或多个平行区域在测试结构的两侧相邻并邻接; 这些可能或可能不是光敏的。这些周围的相邻区域连接到成像器上的漏极; 漏极收集在这些相邻区域捕获的任何电荷。多个相互平行的垂直CCD中的每一个连接到垂直于垂直CCD的方向上定向的一个或多个水平CCD。

72. 发明授权

US06730899B1 Reduced dark current for CMOS image sensors 有权
标题翻译：降低CMOS图像传感器的暗电流
公开(公告)号：US06730899B1
公开(公告)日：2004-05-04
申请号：US10340487
申请日：2003-01-10
申请人： Eric G. Stevens , Robert M. Guidash
发明人： Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L2700
CPC分类号： H01L27/14609 , H01L31/035281
摘要： A CMOS image sensor comprises a substrate of a first conductivity type, a photodetector for capturing incident light and converting it to a charge; a transfer gate for passing the charge from the photodetector; and a region of the first conductivity type of enhanced conductivity in the substrate which extends substantially along an entire length and width of the transfer gate.
摘要翻译： CMOS图像传感器包括第一导电类型的衬底，用于捕获入射光并将其转换成电荷的光电检测器; 用于从光电检测器传递电荷的传输门; 以及基板中基本上沿着传输门的整个长度和宽度延伸的第一导电类型的增强导电性的区域。

73. 发明授权

US6100551A Active pixel sensor integrated with a pinned photodiode 有权
标题翻译：有源像素传感器与固定光电二极管集成
公开(公告)号：US6100551A
公开(公告)日：2000-08-08
申请号：US186845
申请日：1998-11-05
申请人： Paul P. Lee , Robert M. Guidash , Teh-Hsuang Lee , Eric G. Stevens
发明人： Paul P. Lee , Robert M. Guidash , Teh-Hsuang Lee , Eric G. Stevens
IPC分类号： H01L27/146 , H01L27/148 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14643 , H01L27/14645 , H01L27/14831
摘要： The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.
摘要翻译：两种技术（CMOS和CCD）的优化，其中钉扎光电二极管集成到有源像素传感器的图像感测元件中。固定光电二极管通过CCD工艺步骤制造成有源像素架构。集成在有源像素钉扎光电二极管内的电荷通过传输门传输到电荷感测节点。浮动扩散是耦合的CMOS电路，可以提供各个像素的寻址能力。或者，可以使用掩埋通道光电容器代替被钉扎的光电二极管。

74. 发明授权

US6051852A Self aligned LOD antiblooming structure for solid-state imagers 失效
标题翻译：固态成像器的自对准LOD防护结构
公开(公告)号：US6051852A
公开(公告)日：2000-04-18
申请号：US891290
申请日：1997-07-10
申请人： Eric G. Stevens
发明人： Eric G. Stevens
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/14887
摘要： A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by photolithography. The self aligned, lateral-overflow drain (LOD) antiblooming structure results in a design that saves space, and hence, improves overall sensor performance. In this structure, an antiblooming potential barrier is provided that is smaller (in volts) than the barriers that separate the pixels from one another so that excess charge will flow preferentially into the LOD as opposed to the adjacent pixels.
摘要翻译：自对准的横向溢流漏极防护结构对漏极偏置电压不敏感，因此对工艺变化的不敏感性提高。通过光刻可以容易地调节和确定防起泡屏障区域的长度。自对准的横向溢流排水（LOD）防爆结构导致节省空间的设计，从而提高整体传感器性能。在这种结构中，提供了比将像素彼此分开的屏障更小（伏特）的抗电势势垒，使得与相邻像素相反，过量电荷优先流入LOD。

75. 发明授权

US5298448A Method of making two-phase buried channel planar gate CCD 失效
标题翻译：制造两相埋管平面栅极CCD的方法
公开(公告)号：US5298448A
公开(公告)日：1994-03-29
申请号：US995393
申请日：1992-12-18
申请人： Eric G. Stevens , Stephen L. Kosman
发明人： Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768
CPC分类号： H01L29/66954 , H01L29/76841 , Y10S438/947
摘要： The present invention is directed to a method of making a true two-phase CCD using a single layer (level) of the conductive material for the gate electrodes to provide a planar structure. The method includes using L-shaped masking layers having a submicron length of a bottom portion between two masking layers of silicon dioxide on and spaced along a surface of a conductive layer. The conductive layer is over and insulated from a surface of a body of a semiconductor material having a channel region therein. The L-shaped masking layers are removed to expose a spaced narrow portions of the conductive layer. The conductive layer is then etched completely therethrough at each exposed portion to divide the conductive layer into gate electrodes which are spaced apart by submicron width gaps.
摘要翻译：本发明涉及一种使用用于栅电极的导电材料的单层（层）制造真正的两相CCD以提供平面结构的方法。该方法包括在导电层的表面上并沿间隔开的二氧化硅屏蔽层之间使用具有底部的亚微米长度的L形掩模层。导电层与其中具有沟道区的半导体材料的主体的表面结合并绝缘。去除L形掩模层以露出导电层的间隔的狭窄部分。然后，在每个暴露部分，完全蚀刻导电层，以将导电层划分成由亚微米宽度间隔间隔开的栅电极。

76. 发明授权

US5235198A Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel 失效
标题翻译：用于每个像素的具有简化的电极结构的非隔行扫描线间传输CCD图像感测装置
公开(公告)号：US5235198A
公开(公告)日：1993-08-10
申请号：US869097
申请日：1992-04-14
申请人： Eric G. Stevens , David L. Losee , Edward T. Nelson , Timothy J. Tredwell
发明人： Eric G. Stevens , David L. Losee , Edward T. Nelson , Timothy J. Tredwell
IPC分类号： H01L27/148
CPC分类号： H01L27/14831
摘要： An interline transfer type area image sensor which operates in a non-interlaced mode and has an array of columns and rows of photoreceptor in which charge from each pixel is transferred into a stage of a vertical two-phase CCD shift register formed by adjacent electrodes of the CCD. Each electrode of a stage has a separate voltage clock. An ion implanted vertical transfer barrier region is formed under an edge of each electrode.
摘要翻译：一种行间传送型区域图像传感器，其以非隔行扫描模式操作，并具有列和列的感光体，其中来自每个像素的电荷被转移到由相邻电极形成的垂直两相CCD移位寄存器 CCD。舞台的每个电极都有一个单独的电压时钟。在每个电极的边缘下方形成离子注入垂直转移势垒区域。

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