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71. 发明申请

US20110038236A1 Near-Field Light Transducer Comprising Propagation Edge With Predetermined Curvature Radius 有权
标题翻译：近场光传感器包括具有预定曲率半径的传播边
公开(公告)号：US20110038236A1
公开(公告)日：2011-02-17
申请号：US12540752
申请日：2009-08-13
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Tsutomu Chou
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Tsutomu Chou
IPC分类号： G11B11/00 , G11B5/02
CPC分类号： G11B5/314 , G11B5/6088 , G11B2005/001
摘要： Provided is a near-field light transducer with a propagation edge in which the generation of defects is suppressed. The transducer is formed of a Ag alloy and comprises an edge, the edge comprising a portion to be coupled with a light in a surface plasmon mode, the edge extending from the portion to a near-field light generating end surface, and the edge being configured to propagate surface plasmon excited by the light. Further, a curvature radius of the rounded edge is set in the range from 6.25 nm to 20 nm. In the edge and its vicinity, the generation of defects such as cracking and chipping is suppressed. Thereby improved are a propagation efficiency of surface plasmon and a light use efficiency of the transducer. The Ag alloy preferably contains at least one element selected from a group of Pd, Au, Cu, Ru, Rh and Ir.
摘要翻译：提供了具有传播边缘的近场光传感器，其中抑制了缺陷的产生。传感器由Ag合金形成并且包括边缘，边缘包括要与表面等离子体激元模式的光耦合的部分，边缘从该部分延伸到近场光产生端表面，并且该边缘是配置为传播由光激发的表面等离子体激元。此外，圆角边缘的曲率半径设定在6.25nm至20nm的范围内。在边缘及其附近，抑制诸如破裂和碎裂的缺陷的产生。从而改进了表面等离子体激元的传播效率和传感器的光利用效率。 Ag合金优选含有选自Pd，Au，Cu，Ru，Rh和Ir中的至少一种元素。

72. 发明授权

US07881023B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US07881023B2
公开(公告)日：2011-02-01
申请号：US12019202
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/398 , H01L43/08
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein the magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them, wherein the first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流在叠层方向上，其中所述磁阻单元包括非磁性中间层，以及堆叠并形成所述非磁性中间层的第一铁磁层和第二铁磁层，其中所述第一屏蔽层和所述第二屏蔽层在磁化方向上由磁化方向控制装置控制，并且第一铁磁层和第二铁磁层受到磁力的影响而产生相互磁化相反方向产生的反平行磁化状态的动作第一屏蔽层的动作和第二屏蔽层。

73. 发明授权

US07876535B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US07876535B2
公开(公告)日：2011-01-25
申请号：US12019205
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.
摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合，应用层。非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

74. 发明授权

US07826179B2 Magneto-resistive effect device of the CPP structure and magnetic disk system 有权
标题翻译： CPP结构和磁盘系统的磁阻效应器件
公开(公告)号：US07826179B2
公开(公告)日：2010-11-02
申请号：US11856438
申请日：2007-09-17
申请人： Koji Shimazawa , Tsutomu Chou , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Tsutomu Chou , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/1278 , G11B5/3116 , G11B5/3912 , H01F10/325
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and an upper shield layer and a lower shield layer located with that magneto-resistive effect unit sandwiched between them, with a sense current applied in a stacking direction, wherein the magneto-resistive effect unit comprises a nonmagnetic metal intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with that nonmagnetic metal intermediate layer sandwiched between them, wherein the first ferromagnetic layer and said second ferromagnetic layer are exchange coupled via the nonmagnetic metal intermediate layer such that where there is no bias magnetic field applied as yet, their magnetizations are anti-parallel with each other, and at least one of the upper shield layer and the lower shield layer has an inclined magnetization structure with its magnetization inclining with respect to a track width direction, so that by the magnetization of that inclined magnetization structure, a bias magnetic field can be applied to the first ferromagnetic layer and the second ferromagnetic layer. It is thus possible to obtain a magneto-resistive effect device of improved reliability that enables a structure capable of having a narrowed read gap (the gap between the upper shield and the lower shield) to be adopted to meet the recently demanded ultra-high recording density, allows a stable bias magnetic field to be applied in simple structure, and obtain a stable magneto-resistive effect change.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及位于它们之间的该磁阻效应单元的上屏蔽层和下屏蔽层，其中感应电流沿堆叠方向施加，其中所述磁阻效应单元包括非磁性金属中间层，以及与夹在其间的非磁性金属中间层堆叠并形成的第一铁磁层和第二铁磁层，其中所述第一铁磁层和所述第二铁磁层经由非磁性金属中间层交换耦合，使得在没有施加偏压磁场的情况下，它们的磁化彼此反平行，并且上屏蔽层和下屏蔽层具有相对于其磁化倾斜的倾斜磁化结构轨道宽度方向，使得通过该倾斜磁化结构的磁化，可以将偏置磁场施加到第一铁磁层和第二铁磁层。因此，可以获得具有改善的可靠性的磁阻效应装置，使得能够采用能够具有窄的读取间隙（上屏蔽和下屏蔽之间的间隙）的结构来满足最近要求的超高记录密度，允许以简单的结构施加稳定的偏置磁场，并获得稳定的磁阻效应变化。

75. 发明申请

US20100079917A1 Magnetoresistive element including a pair of free layers coupled to a pair of shield layers 有权
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对自由层
公开(公告)号：US20100079917A1
公开(公告)日：2010-04-01
申请号：US12285069
申请日：2008-09-29
申请人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
发明人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/3967 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.
摘要翻译：位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。

76. 发明申请

US20100053820A1 Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 审中-公开
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对铁磁层
公开(公告)号：US20100053820A1
公开(公告)日：2010-03-04
申请号：US12230604
申请日：2008-09-02
申请人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
发明人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/3272 , H01F10/3286
摘要： A magnetoresistive element includes first and second shield layers, an MR stack disposed therebetween, a first hard magnetic layer for setting the magnetization direction of the first shield layer, and a second hard magnetic layer for setting the magnetization direction of the second shield layer. The MR stack includes a first ferromagnetic layer magnetically coupled to the first shield layer, a second ferromagnetic layer magnetically coupled to the second shield layer, and a spacer layer between the first and second ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in antiparallel directions when any external magnetic field other than a magnetic field resulting from the first and second hard magnetic layers is not applied to the two ferromagnetic layers, and that change their directions in response to an external magnetic field other than the magnetic field resulting from the first and second hard magnetic layers.
摘要翻译：磁阻元件包括第一和第二屏蔽层，设置在其间的MR堆叠，用于设定第一屏蔽层的磁化方向的第一硬磁性层和用于设定第二屏蔽层的磁化方向的第二硬磁性层。 MR堆叠包括磁耦合到第一屏蔽层的第一铁磁层，与第二屏蔽层磁耦合的第二铁磁层，以及在第一和第二铁磁层之间的间隔层。当由第一和第二硬磁性层产生的磁场以外的任何外部磁场不施加到两个铁磁层时，第一和第二铁磁层具有处于反平行方向的磁化，并且响应于除了由第一和第二硬磁性层产生的磁场以外的外部磁场。

77. 发明授权

US08049997B2 Magnetoresistive element including a pair of free layers coupled to a pair of shield layers 有权
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对自由层
公开(公告)号：US08049997B2
公开(公告)日：2011-11-01
申请号：US12285069
申请日：2008-09-29
申请人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
发明人： Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Takahiko Machita , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/3967 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.
摘要翻译：位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。

78. 发明授权

US07881021B2 CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same 有权
标题翻译：具有用于具有彼此正交的相应磁化的铁磁层的偏置装置的CPP型磁阻器件，以及使用它们的磁盘系统
公开(公告)号：US07881021B2
公开(公告)日：2011-02-01
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.
摘要翻译：一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

79. 发明申请

US20090290264A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
公开(公告)号：US20090290264A1
公开(公告)日：2009-11-26
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.

80. 发明授权

US08310791B2 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US08310791B2
公开(公告)日：2012-11-13
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

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