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71. 发明授权

US6146982A Method for producing a low-impedance contact between a metallizing layer and a semiconductor material 失效
标题翻译：用于在金属化层和半导体材料之间产生低阻抗接触的方法
公开(公告)号：US6146982A
公开(公告)日：2000-11-14
申请号：US853158
申请日：1997-05-08
申请人： Wolfgang Werner , Klaus Wiesinger , Andreas Preussger
发明人： Wolfgang Werner , Klaus Wiesinger , Andreas Preussger
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/3205 , H01L21/331
CPC分类号： H01L21/28512
摘要： A method for producing a low-impedance contact between a metallizing layer and a semiconductor material of a first conductivity type having a semiconductor surface, an insulation layer on the semiconductor surface and a semiconductor layer on the insulation layer, includes applying a first insulating layer with a predetermined content of dopants on the semiconductor layer, and structuring the first insulating layer by anisotropic etching, forming first and second openings. The semiconductor layer is anisotropically etched by using the first insulating layer as a mask. A first dopant of a second conductivity type is implanted and driven through the first opening into the semiconductor material with a first phototechnique, forming a first zone in the semiconductor material. A second dopant of the first conductivity type is implanted through the second opening into the semiconductor material with a second phototechnique. A second doped insulating layer is applied over the entire surface. The second insulating layer is anisotropically back-etched down to the semiconductor surface, with peripheral insulating webs remaining in the first opening. The semiconductor material is self-adjustingly anisotropically etched down to the first zone, by using the second insulating layer as a mask. A third dopant of higher doping and of the second conductivity type is implanted into the first zone by using the second insulating layer as a mask. A metallizing layer is applied.
摘要翻译：一种用于在金属化层和具有半导体表面的半导体材料的半导体材料，半导体表面上的绝缘层和绝缘层上的半导体层之间产生低阻抗接触的方法，包括：将第一绝缘层与半导体层上的预定含量的掺杂剂，并且通过各向异性蚀刻构造第一绝缘层，形成第一和第二开口。通过使用第一绝缘层作为掩模对半导体层进行各向异性蚀刻。第一导电类型的第一掺杂剂通过第一光刻技术被注入和驱动通过第一开口进入半导体材料，在半导体材料中形成第一区。第一导电类型的第二掺杂剂通过第二开口以第二光电技术注入半导体材料。在整个表面上施加第二掺杂绝缘层。将第二绝缘层各向异性地向下蚀刻到半导体表面，其中外围绝缘网保留在第一开口中。通过使用第二绝缘层作为掩模，将半导体材料自适应地各向异性地蚀刻到第一区域。通过使用第二绝缘层作为掩模，将较高掺杂和第二导电类型的第三掺杂剂注入第一区。施加金属化层。

72. 发明授权

US3989536A Sugar centrifuge with a device for blocking and unblocking an opening thereof 失效
标题翻译：糖离心机具有用于阻塞和解除其开口的装置
公开(公告)号：US3989536A
公开(公告)日：1976-11-02
申请号：US643510
申请日：1975-12-22
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： B04B11/05 , C13F1/06
CPC分类号： B04B11/05
摘要： A centrifuge drum is mounted for rotation about an upright axis and has a bottom wall provided with an opening. A closure member is mounted for movement relative to the bottom wall between a first position in which it sealingly blocks the opening, and a second position in which it unblocks the opening. A fluid-pressure actuated arrangement is operable to move the closure member to its first position and maintain it there as long as desired. A connecting head is provided which connects the fluid pressure-actuated arrangement with a source of pressure fluid.
摘要翻译：离心机滚筒安装成围绕直立轴线旋转并具有设置有开口的底壁。闭合构件被安装成相对于底壁在第一位置和第二位置之间移动，第一位置在其中密封地阻挡开口，第二位置使其打开开口。流体压力致动装置可操作以将封闭构件移动到其第一位置，并且如期望的那样将其保持在那里。提供连接头，其将流体压力驱动装置与压力流体源连接。

73. 发明授权

US09064887B2 Field-effect semiconductor device and manufacturing method therefor 有权
标题翻译：场效应半导体器件及其制造方法
公开(公告)号：US09064887B2
公开(公告)日：2015-06-23
申请号：US13602614
申请日：2012-09-04
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L29/66 , H01L29/872 , H01L29/78
CPC分类号： H01L27/0629 , H01L29/04 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , H01L29/66068 , H01L29/66431 , H01L29/66734 , H01L29/66893 , H01L29/66909 , H01L29/66924 , H01L29/7395 , H01L29/78 , H01L29/7805 , H01L29/7806 , H01L29/7813 , H01L29/8083 , H01L29/8611 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： According to an embodiment of a field-effect semiconductor device, the field-effect semiconductor device includes a semiconductor body and a source electrode. The semiconductor body includes a drift region, a gate region and a source region of a first semiconductor material having a first band-gap and an anode region of a second semiconductor material having a second band-gap lower than the first band-gap. The drift region is of a first conductivity type. The gate region forms a pn-junction with the drift region. The source region is of the first conductivity type and in resistive electric connection with the drift region and has a higher maximum doping concentration than the drift region. The anode region is of the second conductivity type, forms a heterojunction with the drift region and is spaced apart from the source region. The source metallization is in resistive electric connection with the source region and the anode region.
摘要翻译：根据场效应半导体器件的实施例，场效应半导体器件包括半导体本体和源电极。半导体本体包括具有第一带隙的第一半导体材料的漂移区域，栅极区域和源极区域以及具有低于第一带隙的第二带隙的第二半导体材料的阳极区域。漂移区是第一导电类型。栅极区域与漂移区域形成pn结。源区具有第一导电类型并且与漂移区电阻电连接并且具有比漂移区更高的最大掺杂浓度。阳极区域是第二导电类型，与漂移区域形成异质结并且与源极区域间隔开。源极金属化与源极区域和阳极区域电阻电连接。

74. 发明授权

US08683671B2 Method for fastening a retainer of an airbag 有权
标题翻译：用于紧固气囊的保持器的方法
公开(公告)号：US08683671B2
公开(公告)日：2014-04-01
申请号：US12784927
申请日：2010-05-21
申请人： Ernst-Ludwig Hahn , Wolfgang Werner , Siegfried Lautner , Hermann-Josef Lohmer
发明人： Ernst-Ludwig Hahn , Wolfgang Werner , Siegfried Lautner , Hermann-Josef Lohmer
IPC分类号： B60R21/20
CPC分类号： B60R21/21
摘要： The invention concerns a method for fastening a retainer of an airbag, in particular of a window bag, to a body of a motor vehicle. The method for fastening including the steps of: arranging the retainer on the body by inserting a hollow pin in a corresponding bodyshell opening; positioning a tool on the retainer; and pressing a pin into an opening of the hollow pin to radially expand the hollow pin, and thereby securing the hollow pin in the corresponding bodyshell opening.
摘要翻译：本发明涉及一种用于将气囊的保持器（特别是窗口袋）紧固到机动车辆的本体的方法。紧固方法包括以下步骤：通过将空心销插入相应的机体开口中将保持器布置在主体上; 将工具定位在定位器上; 并将销按压到中空销的开口中以使中空销径向膨胀，从而将中空销固定在相应的机身开口中。

75. 发明申请

US20140061647A1 Field-Effect Semiconductor Device and Manufacturing Method Therefor 有权
标题翻译：场效应半导体器件及其制造方法
公开(公告)号：US20140061647A1
公开(公告)日：2014-03-06
申请号：US13602614
申请日：2012-09-04
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L29/66
CPC分类号： H01L27/0629 , H01L29/04 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , H01L29/66068 , H01L29/66431 , H01L29/66734 , H01L29/66893 , H01L29/66909 , H01L29/66924 , H01L29/7395 , H01L29/78 , H01L29/7805 , H01L29/7806 , H01L29/7813 , H01L29/8083 , H01L29/8611 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： According to an embodiment of a field-effect semiconductor device, the field-effect semiconductor device includes a semiconductor body and a source electrode. The semiconductor body includes a drift region, a gate region and a source region of a first semiconductor material having a first band-gap and an anode region of a second semiconductor material having a second band-gap lower than the first band-gap. The drift region is of a first conductivity type. The gate region forms a pn-junction with the drift region. The source region is of the first conductivity type and in resistive electric connection with the drift region and has a higher maximum doping concentration than the drift region. The anode region is of the second conductivity type, forms a heterojunction with the drift region and is spaced apart from the source region. The source metallization is in resistive electric connection with the source region and the anode region.
摘要翻译：根据场效应半导体器件的实施例，场效应半导体器件包括半导体本体和源电极。半导体本体包括具有第一带隙的第一半导体材料的漂移区域，栅极区域和源极区域以及具有低于第一带隙的第二带隙的第二半导体材料的阳极区域。漂移区是第一导电类型。栅极区域与漂移区域形成pn结。源区具有第一导电类型并且与漂移区电阻电连接并且具有比漂移区更高的最大掺杂浓度。阳极区域是第二导电类型，与漂移区域形成异质结并且与源极区域间隔开。源极金属化与源极区域和阳极区域电阻电连接。

76. 发明授权

US08240702B2 Airbag fastening device with slide 失效
标题翻译：安全气囊紧固装置带滑块
公开(公告)号：US08240702B2
公开(公告)日：2012-08-14
申请号：US12784952
申请日：2010-05-21
申请人： Ernst-Ludwig Hahn , Wolfgang Werner , Siegfried Lautner , Hermann-Josef Lohmer
发明人： Ernst-Ludwig Hahn , Wolfgang Werner , Siegfried Lautner , Hermann-Josef Lohmer
IPC分类号： B60R21/20
CPC分类号： B60R21/213
摘要： A fastening device for the airbag, in particular a window airbag, is provided, having a retainer to which the airbag can be fastened and that has an opening through which a mounting stud can be passed. Fastened to the retainer is a slide element that can be slid from an open position into a fastened position and the stud is captured in the opening by the slide in the fastened position.
摘要翻译：提供了一种用于气囊，特别是窗户气囊的紧固装置，其具有可以紧固气囊的保持器，并且具有可以穿过安装螺柱的开口。紧固到保持器上的是滑动元件，其可以从打开位置滑动到紧固位置，并且螺柱在紧固位置被滑块捕获在开口中。

77. 发明授权

US08046879B2 Fastener 有权
标题翻译：紧固件
公开(公告)号：US08046879B2
公开(公告)日：2011-11-01
申请号：US12352960
申请日：2009-01-13
申请人： Wolfgang Werner , Mario Stigler , Michael Schneider , Johann-Adalbert Reindl , Thomas Schmidt
发明人： Wolfgang Werner , Mario Stigler , Michael Schneider , Johann-Adalbert Reindl , Thomas Schmidt
IPC分类号： F16B5/06 , F16B19/00 , F16B21/00
CPC分类号： F16B37/043 , B60R13/0206 , F16B37/061 , Y10T24/303 , Y10T24/309 , Y10T24/344
摘要： A fastener with a shank and, arranged at one end of the shank, a head intended for welding to a workpiece, has multiple detent pawls formed on the shank that extend radially outward from the shank toward the head and that are elastically resilient in the radially inward direction. On the outside, each detent pawl has an engagement recess with support surfaces. The shank has a longitudinal hole, in which is located a stud, wherein one end of the stud projects out of the longitudinal hole and forms the head for welding. Also formed on the shank is a flange that is elastically resilient in the axial direction, whose outermost edge region is located opposite the engagement recess of the detent pawls.
摘要翻译：具有柄部并且布置在柄的一端的用于焊接到工件的头部的紧固件具有形成在柄上的多个棘爪，该棘爪从柄部朝向头部径向向外延伸，并且在径向上弹性地弹性向内方向在外侧，每个棘爪具有带有支承表面的啮合凹槽。柄具有纵向孔，其中定位有螺柱，其中螺柱的一端从纵向孔突出并形成用于焊接的头部。还形成在柄上的是沿轴向弹性弹性的凸缘，其最外边缘区域与止动爪的接合凹槽相对。

78. 发明申请

US20110049667A1 Semiconductor Component With Dielectric Layer Stack 有权
标题翻译：半导体元件与介质层堆叠
公开(公告)号：US20110049667A1
公开(公告)日：2011-03-03
申请号：US12862821
申请日：2010-08-25
申请人： Wolfgang Werner
发明人： Wolfgang Werner
IPC分类号： H01L23/528
CPC分类号： H01L27/0802 , H01L23/52 , H01L27/0676 , H01L27/0805 , H01L27/0814
摘要： A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer and the second dielectric layer are arranged between the semiconductor body zone and the first electrically conductive layer. A second electrically conductive layer is applied between the first dielectric layer and the second dielectric layer. A first voltage divider is switched between the first electrically conductive layer and the semiconductor body zone. The second electrically conductive layer is electrically conductively connected only to the voltage divider.
摘要翻译：半导体部件具有半导体主体区域，与半导体本体区域相邻的第一导电层，具有第一介电特性的第一介电层和具有第二介电特性的第二介电层。第一介电性质与第二介电性质不同。第一电介质层和第二电介质层布置在半导体本体区和第一导电层之间。在第一介电层和第二介电层之间施加第二导电层。第一分压器在第一导电层和半导体主体区之间切换。第二导电层仅导电地连接到分压器。

79. 发明申请

US20100210091A1 METHOD FOR PRODUCING A SEMICONDUCTOR 有权
标题翻译：制造半导体的方法
公开(公告)号：US20100210091A1
公开(公告)日：2010-08-19
申请号：US12769976
申请日：2010-04-29
申请人： Anton Mauder , Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Wolfgang Werner
发明人： Anton Mauder , Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Wolfgang Werner
IPC分类号： H01L21/762 , H01L21/461 , H01L21/22 , H01L21/38 , H01L21/302
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译：一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。

80. 发明申请

US20100054299A1 SENSOR DEVICE 有权
标题翻译：传感器设备
公开(公告)号：US20100054299A1
公开(公告)日：2010-03-04
申请号：US12514555
申请日：2007-11-02
申请人： Wolfgang Werner , Joachim Aurich , Sascha Werth
发明人： Wolfgang Werner , Joachim Aurich , Sascha Werth
IPC分类号： G01N25/68 , H05K13/00
CPC分类号： G01N27/121 , Y10T29/49124 , Y10T29/49155
摘要： A sensor device is provided for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer which is formed on a substrate. In order to develop the sensor device further so that the measuring speed of the sensor device is further increased, the disclosure proposes that the interdigital electrodes and recesses between the interdigital electrodes have a moisture-sensitive hydrophilic surface through condensation cores applied to it.
摘要翻译：提供一种传感器装置，用于检测在形成于基板上的电阻层中形成的叉指电极的表面上的解冻。为了进一步开发传感器装置，传感器装置的测量速度进一步提高，本公开提出，叉指间电极之间的叉指电极和凹槽通过施加到其上的冷凝芯具有湿敏亲水表面。

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