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71. 发明授权

US07695983B2 Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor 有权
标题翻译：在等离子体反应器中独立控制离子密度，离子能量分布和离子离解
公开(公告)号：US07695983B2
公开(公告)日：2010-04-13
申请号：US11360635
申请日：2006-02-22
申请人： Daniel J. Hoffman
发明人： Daniel J. Hoffman
IPC分类号： C23F1/00 , C23C16/00 , H01L21/00 , G01L21/30
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/3266 , H01L21/67069
摘要： A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a first pair of the at least three RF power sources, and setting ion dissociation and ion density by selecting a ratio between the power levels of a remaining one of the three RF power sources and an applied magnetic field. The three respective frequencies can be an LF frequency, an HF frequency and a VHF frequency, wherein the first pair corresponds to the LF and HF frequencies and the second pair corresponds to the HF and VHF frequencies.
摘要翻译：在等离子体反应器中处理工件的方法包括将来自三个相应频率的至少三个RF功率源的RF功率耦合到反应器中的等离子体，通过选择第一对的功率级之间的比率来设定离子能量分布形状至少三个RF功率源，并且通过选择三个RF功率源中的剩余的一个功率电平和所施加的磁场的功率电平之间的比率来设定离子解离和离子密度。三个相应频率可以是LF频率，HF频率和VHF频率，其中第一对对应于LF和HF频率，并且第二对对应于HF和VHF频率。

72. 发明申请

US20100012480A1 METHOD FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权
标题翻译：通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的方法
公开(公告)号：US20100012480A1
公开(公告)日：2010-01-21
申请号：US12173228
申请日：2008-07-15
申请人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianming Tang , Rongjun Wang
发明人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianming Tang , Rongjun Wang
IPC分类号： C23C14/46
CPC分类号： H01J37/34 , H01J37/32165 , H01J37/3444
摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.
摘要翻译：在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。

73. 发明申请

US20100012029A1 APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权
标题翻译：用于通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的装置
公开(公告)号：US20100012029A1
公开(公告)日：2010-01-21
申请号：US12173198
申请日：2008-07-15
申请人： John C. FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
发明人： John C. FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
IPC分类号： B05C11/00
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/34 , H01J37/3444
摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
摘要翻译：在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

74. 发明申请

US20090294062A1 PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR 有权
标题翻译：具有等离子体负载阻抗的等离子体反应器通过同步电源或偏置功率射频发生器的同步调制进行工程过程
公开(公告)号：US20090294062A1
公开(公告)日：2009-12-03
申请号：US12128963
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23C16/505 , C23F1/02
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/32183
摘要： In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
摘要翻译：在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。

75. 发明申请

US20090229969A1 Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
标题翻译：在晶片表面具有各向同性离子速度分布的物理气相沉积方法
公开(公告)号：US20090229969A1
公开(公告)日：2009-09-17
申请号：US12077067
申请日：2008-03-14
申请人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
发明人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C14/3471 , C23C14/50 , C23C14/542 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/3266 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3444
摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
摘要翻译：在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

76. 发明授权

US07585685B2 Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants 有权
标题翻译：从施加的偏置电压和电流以及一对常数确定等离子体反应器中的晶片电压的方法
公开(公告)号：US07585685B2
公开(公告)日：2009-09-08
申请号：US11508374
申请日：2006-08-23
申请人： Daniel J. Hoffman
发明人： Daniel J. Hoffman
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01J37/32174 , H01J37/32935
摘要： The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using a pair constants. Prior to plasma processing of the wafer, a determination is made of first and second constants based upon electrical characteristics of a transmission line through which RF power is coupled to the pedestal. During plasma processing of the wafer, the wafer voltage is determined by performing the steps of sampling an RF input current and an RF input voltage at the impedance match circuit; multiplying the RF input voltage by the first constant to produce a first product; multiplying the RF input current by the second constant to produce a second product; and computing a sum of the first and second products.
摘要翻译： RF等离子体反应器的基座上的晶片的电压立即由施加的偏置电流和使用对常数在晶片的等离子体处理期间采样的施加的偏置电压确定。在等离子体处理晶片之前，基于RF功率与基座耦合的传输线的电特性确定第一和第二常数。在晶片的等离子体处理期间，通过执行在阻抗匹配电路处对RF输入电流和RF输入电压进行采样的步骤来确定晶片电压; 将RF输入电压乘以第一常数以产生第一乘积; 将RF输入电流乘以第二常数以产生第二乘积; 以及计算所述第一和第二乘积的和。

77. 发明授权

US07585384B2 Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor 有权
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US07585384B2
公开(公告)日：2009-09-08
申请号：US12201156
申请日：2008-08-29
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger, Jr.
IPC分类号： C23C1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

78. 发明申请

US20080314571A1 ANNULAR BAFFLE 有权
标题翻译：环形碎片
公开(公告)号：US20080314571A1
公开(公告)日：2008-12-25
申请号：US12109332
申请日：2008-04-24
申请人： Daniel J. Hoffman , Kallol Bera
发明人： Daniel J. Hoffman , Kallol Bera
IPC分类号： F28F13/12 , F28F9/22
CPC分类号： F15D1/0005 , C23C14/22 , C23C16/44 , C23C16/4412 , C23C16/4585 , C23C16/4586 , H01J37/32009 , H01J37/32623 , H01J37/32633 , H01J2237/334 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.
摘要翻译：公开了一种用于蚀刻装置的挡板组件。挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。加热组件可能存在于下框架部分内以控制挡板的温度。挡板组件可以帮助将等离子体限制在腔室中的处理空间内。环可以包括碳化硅，并且下挡板部分可以包括铝。

79. 发明申请

US20080276958A1 SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS 有权
标题翻译：基板清洗室和清洁和调节方法
公开(公告)号：US20080276958A1
公开(公告)日：2008-11-13
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

80. 发明授权

US07440859B2 Method for determining plasma characteristics 失效
标题翻译：确定等离子体特性的方法
公开(公告)号：US07440859B2
公开(公告)日：2008-10-21
申请号：US11617802
申请日：2006-12-29
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC分类号： G01R23/16
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma utilizing the metrics. In another embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括以两个不同的频率获得等离子体的度量，以及使用该度量来确定等离子体的至少一个特性。在另一个实施例中，一种用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一波形和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。

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