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71. 发明申请

US20090189160A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE TFT 有权
标题翻译：薄膜晶体管，其制造方法以及具有TFT的有机发光二极管显示装置
公开(公告)号：US20090189160A1
公开(公告)日：2009-07-30
申请号：US12357513
申请日：2009-01-22
申请人： Ji-Su AHN , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
发明人： Ji-Su AHN , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
IPC分类号： H01L33/00 , H01L21/84 , H01J1/62
CPC分类号： H01L29/458 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66765
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及具有TFT的有机发光二极管（OLED）显示装置，TFT包括基板，设置在基板上的栅极电极，设置在基板上的栅极绝缘层栅电极，设置在栅绝缘层上并使用金属催化剂结晶的半导体层，以及设置在半导体层上并电连接到半导体层的源极和漏极区的源极和漏极。第二金属被扩散到半导体层的表面区域中，以从半导体层的沟道区域吸收金属催化剂。第二种金属在硅中的扩散系数可以低于金属催化剂。

72. 发明申请

US20120326174A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20120326174A1
公开(公告)日：2012-12-27
申请号：US13368536
申请日：2012-02-08
申请人： Byoung-Keon Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee , Heung-Yeol Na
发明人： Byoung-Keon Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee , Heung-Yeol Na
IPC分类号： H01L33/62
CPC分类号： H01L29/78627 , H01L27/3262 , H01L29/42384
摘要： A method of manufacturing an organic light-emitting display device includes forming a gate electrode including a lower gate electrode on a gate insulating layer and an upper gate electrode on the lower gate electrode; forming a source region and a drain region at a semiconductor active layer using the gate electrode as a mask; forming an interlayer insulating layer on a substrate and etching the interlayer insulating layer, resulting in contact holes that expose portions of the source region and the drain region; forming a source/drain electrode raw material on the substrate and etching the source/drain electrode raw material to form a source electrode and a drain electrode; forming a gold overlapped lightly doped drain (GOLDD) structure having a LDD region at the semiconductor active layer by injecting impurity ions; depositing a protective layer on the substrate; and forming a display device on the substrate.
摘要翻译：一种制造有机发光显示装置的方法包括在栅绝缘层上形成包括下栅电极的栅电极和在下栅电极上形成上栅电极; 使用栅电极作为掩模在半导体有源层上形成源区和漏区; 在衬底上形成层间绝缘层，蚀刻层间绝缘层，形成露出源区和漏区的部分的接触孔; 在所述基板上形成源极/漏极原料，并蚀刻所述源极/漏极原料以形成源极和漏极; 通过注入杂质离子在半导体有源层上形成具有LDD区的金重叠轻掺杂漏极（GOLDD）结构; 在衬底上沉积保护层; 以及在所述基板上形成显示装置。

73. 发明授权

US08658460B2 Organic light-emitting display device and method of manufacturing the same 失效
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08658460B2
公开(公告)日：2014-02-25
申请号：US13368536
申请日：2012-02-08
申请人： Byoung-Keon Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee , Heung-Yeol Na
发明人： Byoung-Keon Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee , Heung-Yeol Na
IPC分类号： H01L51/40 , H01L21/00
CPC分类号： H01L29/78627 , H01L27/3262 , H01L29/42384
摘要： A method of manufacturing an organic light-emitting display device includes forming a gate electrode including a lower gate electrode on a gate insulating layer and an upper gate electrode on the lower gate electrode; forming a source region and a drain region at a semiconductor active layer using the gate electrode as a mask; forming an interlayer insulating layer on a substrate and etching the interlayer insulating layer, resulting in contact holes that expose portions of the source region and the drain region; forming a source/drain electrode raw material on the substrate and etching the source/drain electrode raw material to form a source electrode and a drain electrode; forming a gold overlapped lightly doped drain (GOLDD) structure having a LDD region at the semiconductor active layer by injecting impurity ions; depositing a protective layer on the substrate; and forming a display device on the substrate.
摘要翻译：一种制造有机发光显示装置的方法包括在栅绝缘层上形成包括下栅电极的栅电极和在下栅电极上形成上栅电极; 使用栅电极作为掩模在半导体有源层上形成源区和漏区; 在衬底上形成层间绝缘层，蚀刻层间绝缘层，形成露出源区和漏区的部分的接触孔; 在所述基板上形成源极/漏极原料，并蚀刻所述源极/漏极原料以形成源极和漏极; 通过注入杂质离子在半导体有源层上形成具有LDD区的金重叠轻掺杂漏极（GOLDD）结构; 在衬底上沉积保护层; 以及在所述基板上形成显示装置。

74. 发明授权

US08623746B2 Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor 失效
标题翻译：多晶硅层，制备多晶硅层的方法，使用该多晶硅层的薄膜晶体管，以及包括该薄膜晶体管的有机发光显示装置
公开(公告)号：US08623746B2
公开(公告)日：2014-01-07
申请号：US13012619
申请日：2011-01-24
申请人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Kil-Won Lee , Bo-Kyung Choi
发明人： Yun-Mo Chung , Ki-Yong Lee , Jin-Wook Seo , Kil-Won Lee , Bo-Kyung Choi
IPC分类号： H01L51/52 , H01L29/786
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
摘要翻译：一种使硅层结晶的方法。在基板上的缓冲层上形成非晶硅层。催化剂金属层形成在非晶硅层上，其密度为约1011至约1015原子/ cm2。作为催化剂金属层的催化剂金属，在非晶硅层和缓冲层之间的界面上形成具有棱锥形状的晶种，扩散到非晶硅层中。非晶硅层被热处理，以便通过结晶晶种生长硅晶体形成多晶硅层。

75. 发明申请

US20110253987A1 POLYSILICON LAYER, METHOD OF PREPARING THE POLYSILICON LAYER, THIN FILM TRANSISTOR USING THE POLYSILICON LAYER, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 失效
标题翻译：多晶硅层，多晶硅层的制备方法，使用多晶硅层的薄膜晶体管，以及包括薄膜晶体管的有机发光显示装置
公开(公告)号：US20110253987A1
公开(公告)日：2011-10-20
申请号：US13012619
申请日：2011-01-24
申请人： Yun-Mo CHUNG , Ki-Yong Lee , Jin-Wook Seo , Kil-Won Lee , Bo-Kyung Choi
发明人： Yun-Mo CHUNG , Ki-Yong Lee , Jin-Wook Seo , Kil-Won Lee , Bo-Kyung Choi
IPC分类号： H01L51/52 , H01L29/786 , H01L21/205
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
摘要翻译：一种使硅层结晶的方法。在基板上的缓冲层上形成非晶硅层。催化剂金属层形成在非晶硅层上，其密度为约1011至约1015原子/ cm2。作为催化剂金属层的催化剂金属，在非晶硅层和缓冲层之间的界面上形成具有棱锥形状的晶种，扩散到非晶硅层中。非晶硅层被热处理，以便通过结晶晶种生长硅晶体形成多晶硅层。

76. 发明授权

US07935586B2 Thin film transistor and method for fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07935586B2
公开(公告)日：2011-05-03
申请号：US12853263
申请日：2010-08-09
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/84
CPC分类号： H01L29/78654 , H01L29/66757 , H01L29/66772 , H01L29/78675 , H01L29/78696
摘要： A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no gram boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
摘要翻译：通过均匀控制结晶催化剂的低浓度和控制结晶位置，使得不存在晶种并且不存在晶界，或者在薄膜晶体管的沟道层中存在一个晶界，开发出具有改善的特性和均匀性的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的半导体层图案，所述半导体层图案具有不存在种子的沟道层，并且不存在晶界; 形成在半导体层图案上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层; 形成具有不存在种子的沟道层的半导体层图案，并且通过对非晶硅层进行结晶和图案化而不存在晶界; 在半导体层图案上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

77. 发明申请

US20110020990A1 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110020990A1
公开(公告)日：2011-01-27
申请号：US12853263
申请日：2010-08-09
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/336
CPC分类号： H01L29/78654 , H01L29/66757 , H01L29/66772 , H01L29/78675 , H01L29/78696
摘要： A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no gram boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
摘要翻译：通过均匀控制结晶催化剂的低浓度和控制结晶位置，使得不存在晶种并且不存在晶界，或者在薄膜晶体管的沟道层中存在一个晶界，开发出具有改善的特性和均匀性的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的半导体层图案，所述半导体层图案具有不存在种子的沟道层，并且不存在晶界; 形成在半导体层图案上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层; 形成具有不存在种子的沟道层的半导体层图案，并且通过对非晶硅层进行结晶和图案化而不存在晶界; 在半导体层图案上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

78. 发明申请

US20110014756A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20110014756A1
公开(公告)日：2011-01-20
申请号：US12889826
申请日：2010-09-24
申请人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
发明人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/78615 , H01L27/12 , H01L27/1277 , H01L27/3244
摘要： A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.
摘要翻译：薄膜晶体管包括：基板; 设置在所述基板上的半导体层，并且包括沟道区，源极和漏极区以及在所述源极和漏极区的边缘处形成的具有第一杂质的边缘区，以及可选地在所述沟道区中; 绝缘半导体层的栅极绝缘层; 通过所述栅极绝缘层与所述半导体层绝缘的栅电极; 以及电连接到半导体层的源极和漏极。

79. 发明授权

US07815734B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07815734B2
公开(公告)日：2010-10-19
申请号：US11457491
申请日：2006-07-14
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L21/04 , C30B25/12
CPC分类号： H01L29/66757 , H01L27/1277 , H01L27/1281 , H01L29/04 , H01L29/78675
摘要： Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.
摘要翻译：本发明提供一种薄膜晶体管及其制造方法，其中在基板上形成非晶硅层，在非晶硅层上形成包含不同浓度的金属催化剂的覆盖层图案化以形成覆盖层图案，并且使非晶硅层结晶化，使得在非晶硅层和覆盖层图案之间的界面处形成的晶种的密度和位置受到控制，从而提高了非晶硅层的尺寸和均匀性晶粒，并且其中通过一次结晶工艺在期望的位置选择性地形成所需尺寸和均匀性的多晶硅，导致具有优异和期望性能的薄膜晶体管。

80. 发明授权

US07795082B2 Method of fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07795082B2
公开(公告)日：2010-09-14
申请号：US11741273
申请日：2007-04-27
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02532 , H01L21/3226 , H01L27/1277 , H01L27/1288
摘要： A method of fabricating a CMOS thin film transistor includes: providing a substrate; forming an amorphous silicon layer on the substrate; performing a first annealing process on the substrate and crystallizing the amorphous silicon layer into a polysilicon layer; patterning the polysilicon layer to form first and second semiconductor layers; implanting first impurities into the first and second semiconductor layers; implanting second impurities into the first or second semiconductor layer; and performing a second annealing process on the semiconductor layers to remove the metal catalyst remaining in the first or second semiconductor layer, on which the second impurities are implanted, wherein the first impurities are implanted at a dose of 6×1013/cm2 to 5×1015/cm2, and the second impurities are implanted at a dose of 1×1011/cm2 to 3×1015/cm2.
摘要翻译：制造CMOS薄膜晶体管的方法包括：提供衬底; 在所述基板上形成非晶硅层; 在所述衬底上进行第一退火处理并将所述非晶硅层结晶成多晶硅层; 图案化多晶硅层以形成第一和第二半导体层; 将第一杂质注入到第一和第二半导体层中; 将第二杂质注入第一或第二半导体层; 以及对所述半导体层进行第二退火处理，以去除留在其中注入所述第二杂质的所述第一或第二半导体层中的金属催化剂，其中所述第一杂质以6×10 13 / cm 2至5× 1015 / cm2，第1杂质以1×10 11 / cm 2的剂量注入3×1015 / cm 2。

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